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Topic: Threshold Current

Results

Design and Experimental Evaluation of Active-Passive Integrated Microring Lasers: Threshold Current and Spectral Properties

2011 / IEEE
By: Hamacher, M.; Syvridis, D.; Mesaritakis, C.; Stamataki, I.; Kapsalis, A.; Heidrich, H.;

All-Optical Flip-Flop Operation at 1-mA Bias Current in Polarization Bistable Vertical-Cavity Surface-Emitting Lasers With an Oxide Confinement Structure

2011 / IEEE
By: Hattori, S.; Yukawa, K.; Yanai, A.; Katayama, T.; Kawaguchi, H.; Koh, S.; Ikeda, K.;

Lasing Characteristics of VCSELs Subject to Circularly Polarized Optical Injection

2011 / IEEE
By: Yanhua Hong; Qader, A.A.; Shore, K.A.;

Carrier-Transport-Limited Modulation Bandwidth in Distributed Reflector Lasers With Wirelike Active Regions

2012 / IEEE
By: Takahashi, D.; Arai, S.; Nishiyama, N.; Amemiya, T.; Shinno, K.; Shindo, T.; Shirao, M.; SeungHun Lee;

Reliability Evaluation of Distribution Network With DG Considering the Reliability of Protective Devices Affected by SFCL

2011 / IEEE
By: Jin-O Kim; Sung-Yul Kim;

Optimum Periodic Spectrum Sensing for CR Networks

2012 / IEEE
By: Shaoqian Li; Li, G.Y.; Lu Lu;

Gain and Losses and Room-Temperature Operation in Interband Cascade Lasers

2012 / IEEE
By: Towner, F.J.; Saini, S.; Amirloo, J.; Chryssis, A.N.; Geunmin Ryu; Dagenais, M.;

Design and Analysis of New Structure for High-Performance Low-Index Defect-Based Photonic Lattice VCSEL

2012 / IEEE
By: Monfared, Y.M.; Ahmadi, V.;

Low Threshold Current Single-Fundamental-Mode Photonic Crystal VCSELs

2012 / IEEE
By: Yi-Yang Xie; Hong-Da Chen; Chun-Xia Wang; Yan-Xu Zhu; Chen Xu; Qiang Kan;

Reduction of offset in pressure sensors with polysilicon piezoresistors by the pulse current annealing method

2011 / IEEE / 978-1-61284-795-5
By: Gridchin, V.A.; Polstyankin, A.V.;

High repetition rate two-section InAs/InP quantum-dash passively mode locked lasers

2011 / IEEE / 978-3-8007-3356-9
By: Ramdane, A.; Lelarge, F.; Accard, A.; Martinez, A.; Merghem, K.; Rosales, R.;

25-Gb/s Multi-channel 1.3-�m Surface-emitting Laser

2011 / IEEE / 978-3-8007-3356-9
By: Adachi, K.; Tsuji, S.; Sugawara, T.; Matsuoka, Y.; Kitatani, T.; Shinoda, K.;

Lateral current injection distributed feedback laser with wirelike active regions

2011 / IEEE / 978-3-8007-3356-9
By: Osabe, R.; Shindo, T.; Futami, M.; Okumura, T.; Ito, H.; Arai, S.; Nishiyama, N.; Amemiya, T.; Koguchi, T.;

Current-injected quantum-dot microdisk lasers operating at room temperature

2011 / IEEE / 978-3-8007-3356-9
By: Hong, J.Z.; Chien, H.C.; Mao, M.-H.;

Lasing operation of lateral-current-injection membrane DFB laser with surface grating

2011 / IEEE / 978-986-02-8974-9
By: Arai, S.; Nishiyama, N.; Amemiya, T.; Koguchi, T.; Shindo, T.; Osabe, R.; Okumura, T.; Futami, M.;

Simulation of a ridge-type semiconductor laser with selectively proton-implanted cladding layers

2011 / IEEE / 978-1-61284-878-5
By: Yoshida, H.; Numai, T.;

Thermo-electrical modelling of nitride mini-arrays based on the single edge-emitting laser diode

2011 / IEEE / 978-1-61284-878-5
By: Kuc, M.; Sarzala, R.P.;

Optical simulation of a ring-defect photonic crystal vertical-cavity surface-emitting laser

2011 / IEEE / 978-1-61284-878-5
By: Nyakas, P.;

Overcurrent detection circuit for integrated class-D amplifiers

2011 / IEEE / 978-1-4577-0618-9
By: Cadete, F.; Horta, N.; Guilherme, J.; Guilherme, D.;

A room temperature electrically pumped 1.3-�m InAs quantum dot laser monolithically grown on silicon substrates

2011 / IEEE / 978-1-4244-8340-2
By: Liu, H.; Seeds, A.J.; Pozzi, F.; Wang, T.; Lee, A.D.;

GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers with double-phonon resonant depopulation operating up to 172 K

2011 / IEEE / 978-1-4577-0509-0
By: Linfield, E.H.; Davies, A.G.; Li, L.; Khanna, S.P.; Capasso, F.; Belkin, M.A.; Fan, J.; Wang, Q.J.; Vijayraghavan, K.; Adams, R.W.;

Passive vertical cavity surface emitting lasers

2011 / IEEE / 978-1-4244-8939-8
By: Lott, J.A.; Brown, S.N.; Kasten, A.M.; Choquette, K.D.; Ledentsov, N.N.; Shchukin, V.A.;

Quantum dot lasers - the role of the 2D states

2011 / IEEE / 978-1-4244-8939-8
By: Elliott, S.N.; Smowton, P.M.; Krysa, A.B.;

GaInNAs QW with GaNAs intermediate layer for long wavelength laser

2011 / IEEE / 978-1-4577-1417-7
By: Mitani, S.M.; Alias, M.S.; Maskuriy, F.; Manaf, A.A.;

Highly stacked quantum dot lasers fabricated by a strain-compensation technique

2011 / IEEE / 978-1-4244-8939-8
By: Akahane, K.; Kawanishi, T.; Yamamoto, N.;

Carrier distribution in InP/AlGaInP quantum dot laser diodes

2011 / IEEE / 978-1-4244-8939-8
By: Al-Ghamdi, M.S.; Krysa, A.B.; Blood, P.; Smowton, P.M.;

All-optical flip-flop operation of polarization bistable VCSELs with an oxide confinement structure

2011 / IEEE / 978-1-4244-8939-8
By: Katayama, T.; Kawaguchi, H.; Koh, S.; Ikeda, K.; Hattori, S.; Yukawa, K.; Yanai, A.;

Simulation of InGaN/GaN MQW's laser diodes using micro/nano multi-quantum barriers

2011 / IEEE / 978-1-4577-1169-5
By: Raja, M.Y.A.; Shah, A.; Khizar, M.;

An analogue VLSI implementation of polychromous spiking neural networks

2011 / IEEE / 978-1-4577-0674-5
By: van Schaik, A.; Hamilton, T.J.; Tapson, J.; Runchun Wang;

Semiconductor DFB laser with plasmonic metal layers for subwavelength confinement of light

2011 / IEEE / 978-0-9775657-8-8
By: Shindo, T.; Amemiya, T.; Arai, S.; Nishiyama, N.; Myoga, S.; Takahashi, D.;

High power single mode output low threshold current photonic crystal vertical cavity surface emitting lasers

2012 / IEEE / 978-1-55752-935-1
By: Yiyang Xie; Guangdi Shen; Hongda Chen; Chunxia Wang; Qiang Kan; Chen Xu;

The effect of Al mole fraction of DBRs on the GaN-based VCSELs performance

2012 / IEEE / 978-1-4577-0798-8
By: Goharrizi, A.Z.; Hassan, H.A.; Hassan, Z.;

Improved quantum efficiency of GaInAsP/InP top air-clad lateral current injection lasers

2012 / IEEE / 978-1-4577-1619-5
By: Arai, S.; Nishiyama, N.; Amemiya, T.; Doi, K.; Shindo, T.; Shinno, K.; Futami, M.;

Demonstration of Electroluminescence from Strained Ge Membrane LED

2012 / IEEE / 978-1-4577-1865-6
By: Donguk Nam; Saraswat, K.; Nishi, Y.; Brongersma, M.; Huang, K.C.; Szu-Lin Cheng; Sukhdeo, D.;

InGaAsP/InP MQW FP laser and silicon platform integration by direct bonding

2012 / IEEE / 978-4-88552-263-5
By: Higo, A.; Nakano, Y.; Sugiyama, M.; Higurashi, E.; Ling-Han Li;

Pulsed mode red VCSEL for high speed VLC communication

2012 / IEEE / 978-1-4673-2229-4
By: Feher, G.; Berceli, T.; Cseh, T.; Fuzy, C.; Udvary, E.;

Quantum dots for high powers and efficiencies

2012 / IEEE / 978-1-4577-1527-3
By: Deppe, D.G.;

Threshold Analysis of Vertical-Cavity Surface-Emitting Laser with Internal Photonic Crystal Waveguide

2012 / IEEE / 978-1-4577-0911-1
By: Haghighat, Gholamhosein; Ahmadi, Vahid;

The enhancement net power control for lifetime improvement of AMOLED

2012 / IEEE / 978-1-4673-0219-7
By: Jang, Kyounghoon; Kang, Bongsoon; Kang, Hyunjung; Yuk, Jihong; Jo, Hosang;

Influence of Mode $Q$ Factor and Absorption Loss on Dynamical Characteristics for Semiconductor Microcavity Lasers by Rate Equation Analysis

2011 / IEEE
By: Ling-Xiu Zou; Xiao-Meng Lv; Jian-Dong Lin; Qi-Feng Yao; Jin-Long Xiao; Yue-De Yang; Yong-Zhen Huang;

1.3 to 1.55 $\mu\hbox{m}$ All-Optical Wavelength Conversion for VCSEL-to-VCSEL Inversion and Logic

2012 / IEEE
By: Adams, M.J.; Hurtado, A.; Schires, K.; Mazzucato, S.; Balkan, N.; Henning, I.D.;

Fixed-Current Operation of a VCSEL Transmitter Over a Temperature Range From ${-} 20^{\circ}$C to 80$^{\circ}$ C Using an Elevated-Oxide-Layer Structure

2011 / IEEE
By: Min Hwan Kwak; Sungil Kim; Taeyong Kim; Sang-Bae Kim; Kwang-Yong Kang; Seung Beom Kang;

High-Speed Low-Noise InAs/InAlGaAs/InP 1.55-$\mu{\rm m}$ Quantum-Dot Lasers

2012 / IEEE
By: Ivanov, V.; Gilfert, C.; Eisenstein, G.; Gready, D.; Reithmaier, J.P.;

Room-temperature continuous-wave operation of lateral current injection membrane laser

2013 / IEEE
By: Futami, Mitsuaki; Shindo, Takahiko; Doi, Kyohei; Arai, Shigehisa; Lee, Jieun; Amemiya, Tomohiro; Yang, Shu; Inoue, Daisuke; Hiratani, Takuo; Nishiyama, Nobuhiko;

Manufacturing-tolerant compact red-emitting laser diode designs for next generation applications

2015 / IEEE
By: Elliott, S.N.; Smowton, P.M.;

Semiconductor Quantum Well Lasers With a Temperature-Insensitive Threshold Current

2015 / IEEE
By: Mukherjee, J.; Marko, I.P.; Adams, A.R.; Corbett, B.; Stolojan, V.; Pelucchi, E.; Gocalinska, A.; Sweeney, S.J.; Thomas, K.;

Coherently Coupled Photonic-Crystal Surface-Emitting Laser Array

2015 / IEEE
By: Taylor, R.J.E.; Childs, D.T.D.; Hogg, R.A.; Zhou, H.; Thoms, S.; Ternent, G.; Li, G.; Crombie, A.J.; Khamas, S.; Sarma, J.; Babazadeh, N.; Ivanov, P.; Stevens, B.J.;

Reducing Thermal Carrier Spreading in InP Quantum Dot Lasers

2015 / IEEE
By: Krysa, A.B.; Elliott, S.N.; Kasim, M.; Smowton, P.M.;

Numerical Simulation of Inductive Method for Measuring j C and Detecting Crack in an HTS Film

2015 / IEEE
By: Takayama, T.; Kamitani, A.; Ikuno, S.;

Detection Mechanism in SNSPD: Numerical Results of a Conceptually Simple, Yet Powerful Detection Model

2015 / IEEE
By: Schilling, A.; Zhang, X.; Lonsky, J.; Engel, A.;

A Directional-Emission 1060-nm GaAs/InGaAs Microcylinder Laser

2015 / IEEE
By: Kan, Q.; Yu, H.; Chen, W.; Ding, Y.; Li, S.; Li, M.; Pan, J.; Wang, W.; Mi, J.; Zhou, X.;

Optimizing the Electrical Stimulation of Retinal Ganglion Cells

2015 / IEEE
By: Hadjinicolaou, A. E.; O'Brien, B. J.; Ibbotson, M. R.; Cloherty, S. L.; Garrett, D. J.; Apollo, N. V.; Savage, C. O.;

Effect of Carrier Leakage on Optimal AR Coatings in Midinfrared Interband Cascade Lasers

2015 / IEEE
By: Dagenais, M.; Saini, S.S.; Amirloo, J.;

Measurement of Temperature-Dependent Polarization Parameters in Long-Wavelength VCSELs

2015 / IEEE
By: Valle, A.; Quirce, A.; Panajotov, K.; Thienpont, H.; Pesquera, L.;

Corrections to “Optical Design of Distributed Feedback Lasers-on-Thin-Film-Silicon”

2015 / IEEE
By: Pu, J.; Wang, Q.; Krishnamurthy, V.; Ho, S.T.; Loh, T.;

Mode Investigation for Hybrid Microring Lasers With Sloped Sidewalls Coupled to a Silicon Waveguide

2015 / IEEE
By: Sui, S.; Huang, Y.; Du, Y.; Xiao, J.; Yang, Y.; Tang, M.;

Research on energy-saving control of standby household appliances

2014 / IEEE
By: Ji, Xianghe; Zhang, Guiqing; Wu, Xiaolong; Tao, Liang; Li, Chengdong;

Impact of Injector Doping on Threshold Current of Mid-Infrared Quantum Cascade Laser–Non-Equilibrium Green’s Function Analysis

2015 / IEEE
By: Pierscinski, K.; Bugajski, M.; Haldas, G.; Kolek, A.; Gutowski, P.;

Reduced Threshold Current in NbO2 Selector by Engineering Device Structure

2014 / IEEE
By: Elliman, R.G.; Song, S.; Belay, K.; Venkatachalam, D.K.; Nandi, S.K.; Liu, X.;

Low-threshold-current operation of lateral current injection membrane distributed-feedback laser bonded on Si

2014 / IEEE
By: Hiratani, Takuo; Atsumi, Yuki; Lee, Jieun; Doi, Kyohei; Inoue, Daisuke; Arai, Shigehisa; Nishiyama, Nobuhiko; Amemiya, Tomohiro; Atsuji, Yuki;

Low-power and high-speed operation capabilities of semiconductor membrane lasers — Energy cost limited by Joule heat

2014 / IEEE
By: Hiratani, Takuo; Arai, Shigehisa; Nishiyama, Nobuhiko; Amemiya, Tomohiro; Atsuji, Yuki; Doi, Kyohei;

Improved Performance of 2.2- μ m InAs/InGaAs QW Lasers on InP by Using Triangular Wells

2014 / IEEE
By: Chen, X.; Gu, Y.; Zhang, Y.; Cao, Y.; Li, H.; Zhou, L.;

Critical axial magnetic field for prevention of anode spot formation in vacuum interrupters

2013 / IEEE
By: Geng, Yingsan; Liu, Zhiyuan; Kong, Guowei; Jianhua Wang;

Terahertz quantum cascade laser performance for structures with variable barrier heights

2013 / IEEE
By: Vijayraghavan, Karun; Jiang, Aiting; Belkin, Mikhail A.; Wasilewski, Zbig R.; Jirauschek, Christian; Matyas, Alpar;

Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes

2013 / IEEE
By: Trankle, G.; Kneissl, M.; Schwarz, U. T.; Einfeldt, S.; Lukens, G.; Weig, T.; Wenzel, H.; Redaelli, L.;

Wavelength dependence of characteristics of 1.2-1.55 mu m InGaAsP/InP p-substrate buried crescent laser diodes

1988 / IEEE
By: Yamamoto, Y.; Higuchi, H.; Namizaki, H.; Fujiwara, M.; Kakimoto, S.; Sakakibara, Y.; Takemoto, A.; Nakajima, Y.;

Characterization of mass-transported p-substrate GaInAsP/InP buried-heterostructure lasers with analytical solutions for electrical and thermal resistances

1988 / IEEE
By: Tsang, D.Z.; Walpole, J.N.; Liau, Z.L.; Diadiuk, V.;

Four models of lateral current spreading in double-heterostructure stripe-geometry lasers

1988 / IEEE
By: Papannareddy, R.; Butler, J.K.; Ferguson, W.E., Jr.;

Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers

1988 / IEEE
By: Nakamura, M.; Kokubun, Y.; Sugiyama, N.; Naritsuka, S.; Furuyama, H.; Kurobe, A.;

Subthreshold current ion GaAs MESFETs

1988 / IEEE
By: Peczalski, A.; Conger, J.; Shur, M.S.;

High-peak power K/sub a/-band gyrotron oscillator experiments with slotted and unslotted cavities

1988 / IEEE
By: Fliflet, A.W.; Gold, S.H.; Sucy, M.; Kinkead, A.K.; Manheimer, W.M.; Hardesty, D.L.; Granatstein, V.L.; Lee, R.C.; McCowan, R.B.;

Estimation of the linewidth enhancement factor for a PbCdS diode laser

1988 / IEEE
By: Ahlberg, H.; Andrekson, P.A.; Denti, R.; Eng, S.T.;

High reliability low-threshold InGaAsP ridge waveguide lasers emitting at 1.3 mu m

1988 / IEEE
By: Haynes, J.; Murison, R.; Rashid, A.M.; Janssen, A.; Stockton, T.E.; Henshall, G.D.;

Monolithic waveguide coupled cavity lasers and modulators fabricated by impurity induced disordering

1988 / IEEE
By: Paoli, T.L.; Mosby, W.J.; Thornton, R.L.;

Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers

1988 / IEEE
By: Blood, P.; Kucharska, A.I.; Colak, S.;

Surface emitting semiconductor lasers

1988 / IEEE
By: Iga, K.; Kinoshita, S.; Koyama, F.;

Metal clad Pb/sub 1-x/Sn/sub x/ Se/Pb/sub 1-x-y/Eu/sub y/ Sn/sub x/Se distributed feedback lasers

1988 / IEEE
By: Tacke, M.; Katzir, A.; Shani, Y.; Preier, H.M.;

Hot-electron reliability and ESD latent damage

1988 / IEEE
By: Polgreen, T.; Chatterjee, A.; Aur, S.;

Surface-emitting lasers with GaAlAs/AlAs DBR grown by OMVPE

1988 / IEEE
By: Kawashima, K.; Ibaraki, A.; Ohara, S.; Niina, T.; Yamaguchi, T.; Ishikawa, T.;

Unified planar process for fabricating heterojunction bipolar transistors and buried heterostructure lasers utilizing impurity-induced disordering

1988 / IEEE
By: Chung, H.F.; Mosby, W.J.; Thornton, R.L.;

Advances in measurement techniques for characterizing mid-IR fibers in the 2-12 mu m wavelength region

1988 / IEEE
By: Sunak, H.R.D.; Bastien, S.P.;

Could the new high interrupting capacity circuit breaker change your distribution system?

1988 / IEEE
By: Rooks, J.A.; Rowe, N.E.;

Theoretical analysis of tuning properties for a phase-tunable DFB laser

1988 / IEEE
By: Olesen, H.; Tromborg, B.; Pan, X.;

Optical gain in a strained-layer quantum-well laser

1988 / IEEE
By: Chuang Shun-Lien; Ahn, D.;

A theoretical model of multielectrode DBR lasers

1988 / IEEE
By: Pan Xing; Tromborg, B.; Olesen, H.;

Design of quantum well AlGaAs-GaAs stripe lasers for minimization of threshold current-application to ridge structures

1988 / IEEE
By: Brillouet, F.; Cheng, S.P.; Correc, P.;

Photoelastic effects on the emission patterns of InGaAsP ridge-waveguide lasers

1989 / IEEE
By: Samson, L.; Berger, J.; Champagne, A.; Glinski, J.M.; Maciejko, R.;

Gain spectra of quantum wires with inhomogeneous broadening

1989 / IEEE
By: Yariv, A.; Vahala, K.; Zarem, H.;

High signal to noise operation of fiber optic links to 18 GHz

1988 / IEEE
By: Blauvelt, H.; Lau, K.;

Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current

1989 / IEEE
By: Kamiya, T.; Nagarajan, R.; Kurobe, A.;

Optical gain in GaAs/GaAlAs graded-index separate-confinement single-quantum-well heterostructures

1989 / IEEE
By: Xu, J.Z.; Xu, Z.Y.; Zheng, B.D.; Zhu, L.D.; Feak, G.A.B.;

Suppression of longitudinal spatial hole-burning effect in lambda /4-shifted DFB lasers by nonuniform current distribution

1989 / IEEE
By: Usami, M.; Akiba, S.;

Spectral characteristics of a three-section wavelength-tunable DBR laser

1989 / IEEE
By: Ishikawa, H.; Kotaki, Y.;

Ultra-low-threshold, high-bandwidth, very-low noise operation of 1.52 mu m GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

1989 / IEEE
By: Richinn, P.; Maillot, P.; D'Auria, L.; de Gremoux, B.; Blondeau, R.; Deborgies, F.; Chevalier, G.; Combemale, Y.; Talneau, A.; Rondi, D.; Krakowski, M.;

Wide-band modulation of 1.3 mu m InGaAsP buried crescent lasers with iron- and cobalt-doped semi-insulating current blocking layers

1989 / IEEE
By: Huang, S.Y.; Cheng, W.-H.; Zehr, S.W.; Hess, K.L.; Pooladdej, J.; Renner, D.S.; Wolf, D.; Buehring, K.D.; Appelbaum, A.;

PbEuTe lasers with 4-6 mu m wavelength made with hot-wall epitaxy

1989 / IEEE
By: Ebe, H.; Shinohara, K.; Nishijima, Y.;

Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substrates

1989 / IEEE
By: Dzurko, K.M.; Dapkus, P.D.; Osinski, J.S.; Beyler, C.A.; Menu, E.P.;

Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

1989 / IEEE
By: Heasman, K.C.; Woodbridge, K.; Fletcher, E.D.; Blood, P.; Adams, A.R.;

Design of Fabry-Perot surface-emitting lasers with a periodic gain structure

1989 / IEEE
By: Geels, R.S.; Corzine, S.W.; Coldren, L.A.; Yan, R.-H.; Scott, J.W.;

InGaAsP/InP DFB laser with a new grating structure by MOCVD

1988 / IEEE
By: Mizuguchi, K.; Kimura, T.; Yoshida, N.; Kawagishi, A.; Murotani, T.; Ohkura, Y.; Takemoto, A.;

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