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Topic: Sonos Devices

Results

Estimation of Trapped Charge Density in SONOS Flash Memory Using a Parallel Capacitor Model
2011 / IEEE
By: Hua-Min Li; Won Jong Yoo; Gang Zhang;
Read Characteristics of Independent Double-Gate Poly-Si Nanowire SONOS Devices
2011 / IEEE
By: Horng-Chih Lin; Tiao-Yuan Huang; Wei-Chen Chen; Zer-Ming Lin;
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
2011 / IEEE
By: Chenhsin Lien; Wen-Fa Wu; Jr-Jie Tsai; Ruei-Kai Shia; Nguyen Dang Chien; Chun-Hsing Shih; Ji-Ting Liang; Yan-Xiang Luo; Wei Chang; Ming-Kun Huang;
Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory
2011 / IEEE
By: Van Houdt, J.; Van den bosch, G.; Van Aerde, S.; Richard, O.; Douhard, B.; Vrancken, C.; Debusschere, I.; Paraschiv, V.; De Keersgieter, A.; Breuil, L.; Cacciato, A.; Arreghini, A.; Blomme, P.; Kar, G.S.;
A Novel SONOS Gate Power MOSFET With Excellent UIS Capability
2011 / IEEE
By: Sin, J.K.O.; Ng, J.C.W.; Xianda Zhou;
Reading Operation and Cell Scalability of Nonvolatile Schottky barrier Multibit Charge-Trapping Memory Cells
2012 / IEEE
By: Ji-Ting Liang; Chun-Hsing Shih; Yan-Xiang Luo;
Multilevel Schottky Barrier Nanowire SONOS Memory With Ambipolar n- and p-Channel Cells
2012 / IEEE
By: Wen-Fa Wu; Wei Chang; Chun-Hsing Shih; Chenhsin Lien;
Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius
2012 / IEEE
By: Byung-Gook Park; Myoung-Sun Lee; Jong-Ho Lee; Il Hwan Cho;
High-Reliability Trigate Poly-Si Channel Flash Memory Cell With Si-Nanocrystal Embedded Charge-Trapping Layer
2012 / IEEE
By: Yung-Chun Wu; Hung-Bin Chen; Chun-Yen Chang; Chao-Kan Yang; Ji-Hong Chiang; Lun-Chun Chen;
Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash Array
2012 / IEEE
By: Tien-Sheng Chao; Yu-Lun Lu; Fang-Chang Hsueh; Kuan-Ti Wang; Tsung-Yu Chiang; Li-Chen Yen; Chia-Chun Liao; Yi-Hong Wu;
A Novel SONOS Memory With Recessed-Channel Poly-Si TFT via Excimer Laser Crystallization
2012 / IEEE
By: Chao-Lung Wang; Po-Yu Yang; Hsu-Hang Kuo; Chun-Chien Tsai; I-Che Lee; Huang-Chung Cheng;
Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory
2012 / IEEE
By: Doo-Hyun Kim; Dong Hua Li; Jung Hoon Lee; Seongjae Cho; Won Bo Shim; Gil Sung Lee; Jungdal Choi; Byung-Gook Park; Wandong Kim; Se Hwan Park; Yoon Kim;
Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels
2011 / IEEE / 978-1-4577-0378-2
By: Tzu-I Tsai; Tuan-Kai Su; Tiao-Yuan Huang; Horng-Chih Lin; Chun-Jung Su;
A novel junctionless all-around-gate SONOS device with a quantum nanowire on a bulk substrate for 3D stack NAND flash memory
2011 / IEEE / 978-1-4244-9949-6
By: Yang-Kyu Choi; Sungho Kim; Duarte, J.P.; Dong-Il Moon; Sung-Jin Choi;
A study on poly-Si thin-film transistor (TFT) SONOS memory cells with source/drain engineering
2011 / IEEE / 978-1-4577-0708-7
By: Bing-Yue Tsui; Jui-Yao Lai;
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices
2011 / IEEE / 978-1-4577-0708-7
By: Lacaita, A.L.; Van Houdt, J.; Spinelli, A.S.; Van den bosch, G.; Compagnoni, C.M.; Arreghini, A.; Maconi, A.;
The development of an enhancement-mode single-transistor SONOS cell in 0.13�m technology
2011 / IEEE / 978-1-4577-0144-3
By: Kaba, D.; Seok Sewoon; Chee Boon Jiew; Tan Chuan Chien;
High Speed Sense Amplifier Circuit
2011 / IEEE / 978-1-4577-1788-8
By: Zhang Hua;
A Dynamic Programming Method with Programming Current Clamped in Embedded P-Channel SONOS Flash Memory
2012 / IEEE / 978-1-4673-1081-9
By: Yuan-Tai Lin; Wein-Town Sun; Yu-Shiung Tsai; Hong-Yi Liao; Ying-Je Chen; Zhi-Bin Kuo; Zheng-Jie Lee; Cheng-Jye Liu; Shang-Wei Fang;
Ultimate Scaling Projection of Cylindrical 3D SONOS Devices
2012 / IEEE / 978-1-4673-1081-9
By: Van den bosch, G.; Arreghini, A.; Van Houdt, J.; Kar, G.S.;
Planar SONOS gate power MOSFET with an ultra-shallow body region
2012 / IEEE / 978-1-4577-1597-6
By: Xianda Zhou; Sin, J.K.O.; Hao Feng;
Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices
2012 / IEEE / 978-1-4673-0997-4
By: Huang, Tiao-Yuan; Lin, Horng-Chih; Lee, Ko-Hui;
Low standby power charge trap flash memory with tunneling field effect transistor
2012 / IEEE / 978-1-4673-0997-4
By: Han, Min Su; Cho, Il Hwan; Oh, Youngcheol; Park, Chong-Dae; Seo, Dongsun; Lee, Jong Ho;
$V_{t}$ Retention Distribution Tail in a Multitime-Program MLC SONOS Memory Due to a Random-Program-Charge-Induced Current-Path Percolation Effect
2012 / IEEE
By: Yueh-Ting Chung; Tzu-I Huang; Chi-Wei Li; You-Liang Chou; Chih-Yuan Lu; Tahui Wang; Lee, M.Y.; Kuang-Chao Chen; Jung-Piao Chiu;
Balance theory on Three Socions
2014 / IEEE
By: Imai, Michita; Sono, Taichi;
Characterization of 64kb test chip for touch application on 90nm SONOS technology
2014 / IEEE
By: Chul-Hoon, Choi; Jun-Ho, Lee; Seung-Deok, Kim; Young-Dong, Joo; Young-Jun, Kwon; In-Wook, Cho; Sung-Kun, Park; Jae-Gwan, Kim; Tae-Ho, Lee; Kyung-Dong, Yoo;
High Performance of Fin-Shaped Tunnel Field-Effect Transistor SONOS Nonvolatile Memory With All Programming Mechanisms in Single Device
2014 / IEEE
By: Lin, H.; Wu, Y.; Jhan, Y.; Yeh, M.; Chen, Y.; Hung, M.;
TID Radiation Response of 3-D Vertical GAA SONOS Memory Cells
2014 / IEEE
By: Van den bosch, G.; Liu, L.; Arreghini, A.; Blomme, P.; Pan, L.; Qiao, F.; Xu, J.; Van Houdt, J.;
O-F estimation based on curved Gabor Filter for fingerprint image enhancement
2013 / IEEE
By: Sudha, N.; Rajan, R. Ashoka; Kumar, P. Anandha;
A time-dependent parameter acquisition system for the characterization of MOS transistors and SONOS memory devices
1989 / IEEE
By: Sharma, U.; White, M.H.; Booth, R.V.H.;
A noninvasive ultrasonic system to determine residual bladder volumes
1988 / IEEE / 0-7803-0785-2
By: Roemer, R.R.; Mylrea, K.C.; Kruczkowski, P.J.C.; Drach, G.M.;
Electrically modifiable nonvolatile synapses for neural networks
1989 / IEEE
By: White, M.H.; Chen, C.-Y.;
A new buried-channel EEPROM device
1992 / IEEE
By: White, M.H.; Hu, Y.;
A new failure mechanism and its improvement on gate oxide reliability at field edge by LOCOS isolation
1992 / IEEE
By: Hirashita, N.; Nagatomo, Y.; Uchida, H.; Takahashi, M.; Ino, M.;
Observation of near-interface oxide traps with the charge-pumping technique
1992 / IEEE
By: White, M.H.; French, M.L.; Siergiej, R.R.; Paulsen, R.E.;
Theory and application of charge pumping for the characterization of Si-SiO/sub 2/ interface and near-interface oxide traps
1994 / IEEE
By: Paulsen, R.E.; White, M.H.;
Design and scaling of a SONOS multidielectric device for nonvolatile memory applications
1994 / IEEE
By: White, M.H.; Sathianathan, H.; Chun-Yu Chen; French, M.L.;
A qualified radiation hardened EEPROM for space and tactical weapons applications
1994 / IEEE / 0-7803-1893-5
By: Marthinuss, J.; Williams, D.; Murray, J.; McClintock, R.; Knoll, M.; Adams, D.; Bishop, R.;
Assessment of image quality of intracoronary ultrasound systems with tissue-equivalent vessel phantoms
1994 / IEEE / 0-8186-6570-X
By: Voigtlaender, T.; Brennecke, R.; Krass, S.; Meyer, J.; Rupprecht, H.J.; Staehr, P.;
A low voltage SONOS nonvolatile semiconductor memory technology
1996 / IEEE / 0-7803-3510-4
By: French, M.L.; Purwar, A.; Yang, Y.L.; White, M.H.;
Radiation hardened 64 K/256 K EEPROM technology
1996 / IEEE / 0-7803-3510-4
By: Williams, D.; McClintock, R.; Murray, J.; Knoll, M.; Bishop, R.; Adams, D.;
A low voltage SONOS nonvolatile semiconductor memory technology
1997 / IEEE
By: Yang Yang; White, M.H.; French, M.L.; Ansha Purwar;
Synaptic SONOS nonvolatile analog memories for artifical neural networks
1997 / IEEE / 0-7803-2651-2
By: Kwang-Yell Seo; Sang-Bae Yi; Seon-Ju Kim; Sung-Bae Lee;
Fabrication and characteristics of scaled SONOSFET nonvolatile memory devices for full-featured EEPROMs
1997 / IEEE / 0-7803-2651-2
By: Joo-Yeon Kim; Seon-Ju Kim; Kwang-Yell Seo; Sung-Bae Lee; Sang-Bae Yi;
Transport of charge and electronic structure of traps in SONOS structures
1997 / IEEE / 0-7803-3802-2
By: Morokov, Yu.N.; Novikov, Yu.N.; Gritsenko, V.A.; Wong, H.;
Evaluation of respiratory influences on left ventricular function by means of echocardiographic approach
1997 / IEEE / 0-7803-4445-6
By: Crema, C.; Turiel, M.; Baselli, G.; Porta, A.; Cerutti, S.; Dalla Vecchia, L.; Pagani, M.; Malliani, A.; Caiani, E.; Lucini, D.;
Angle dependence and reproducibility of cyclic variation of integrated backscatter in normal myocardium
1997 / IEEE / 0-7803-4445-6
By: Stempfle, H.U.; Angermann, C.E.; Theisen, K.; Werner, C.; Buchmeier, U.;
High Density Mrm Memory Technology In Advanced Signal, Data, Control Processors And Other Memory Systems
1993 / IEEE / 0-7803-1290-2
By: Wiker, R.L.;
A SONOS Nonvolatile Memory Cell For Semiconductor Disk Application
1993 / IEEE / 0-7803-1290-2
By: White, M.; Sathianathan, H.; French, M.;
An Automated SONOS NVSM Dynamic Characterization System
1993 / IEEE / 0-7803-1290-2
By: Banerjee, A.K.; White, M.H.; Martin, M.G.; Yin Hu;
SONOS Technology For Commercial And Military Nonvolatile Memory Applications
1993 / IEEE / 0-7803-1290-2
By: Farfell, P.; Adams, D.; Murray, J.; Knoll, M.; Jakubczak, J.; Williams, D.; Jacunski, M.;
A new SONOS memory using source-side injection for programming
1998 / IEEE
By: Kuo-Tung Chang; Ko-Min Chang; Paulson, W.M.; Higman, J.M.; Swift, C.; Wei-Ming Chen;
A Solid-State Electronic Linear Adaptive Neuron With Electrically Reprogrammabe Synapses
1991 / IEEE
By: French, M.; White, M.H.; Chen, C.-Y.M.;
2k nonvolatile shadow RAM and 256k EEPROM SONOS nonvolatile memory development
1998 / IEEE / 0-7803-4518-5
By: Knoll, M.G.; Habermehl, S.D.; Murray, J.R.; Nasby, R.D.; Bennett, R.S.; Jones, R.V.; Rodriguez, J.L.; Mahl, P.R.; Tafoya-Porras, B.C.;
A 32k/spl times/8 radiation-hardened CMOS/SONOS EEPROM
1998 / IEEE / 0-7803-4518-5
By: Williams, D.; Knoll, M.; Murray, J.; Adams, D.; Loyd, A.; Bishop, R.;
Nonvolatile memory based on mobile protons
1998 / IEEE / 0-7803-4518-5
By: Fleetwood, D.M.; Knoll, M.G.; Winokur, P.S.; Meisenheimer, T.L.; Schwank, J.R.; Warren, W.L.; Draper, B.L.; Shaneyfelt, M.R.; Devine, R.A.B.; Vanheusden, K.;
High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology
2000 / IEEE
By: Kim, D.M.; Myung Kwan Cho;
On the go with SONOS
2000 / IEEE
By: Adams, D.A.; White, M.H.; Bu, J.;
Effects of two-step high temperature deuterium anneals on SONOS nonvolatile memory devices
2001 / IEEE
By: White, M.H.; Jiankang Bu;
Improvement in retention reliability of SONOS nonvolatile memory devices by two-step high temperature deuterium anneals
2001 / IEEE / 0-7803-6587-9
By: White, M.H.; Jiankang Bu;
SONOS nonvolatile semiconductor memories for space and military applications
2001 / IEEE / 0-7803-6599-2
By: Murray, J.R.; Mavisz, D.; Adams, D.A.; White, M.H.;
Syntactic complexity suitable for listening
2001 / IEEE / 0-7803-7087-2
By: Sugie, N.; Yamashita, E.; Sagawa, Y.;
Reproducibility of echocardiographic left ventricular function assessment by an automated technique
2001 / IEEE / 0-7803-7266-2
By: Santopietro, G.; Furgi, G.; Vitale, D.F.; Longobardi, G.; Bosco, Q.; Rengo, F.; Picone, C.; Nicolino, A.;
Model to predict reliability of ONO non-volatile memory
2001 / IEEE / 0-7803-7167-4
By: Kumar, S.; Russell, E.L.;
Cause of data retention loss in a nitride-based localized trapping storage flash memory cell
2002 / IEEE / 0-7803-7352-9
By: Gu, S.H.; Tsai, W.J.; Chih-Yuan Lu; Pan, S.; Zous, N.K.; Tahui Wang; Chen, C.H.; Liu, C.C.; Yeh, C.C.;
Multi-level vertical channel SONOS nonvolatile memory on SOI
2002 / IEEE / 0-7803-7312-X
By: Yong Kyu Lee; Jong Duk Lee; Young Wuk Kim; Dong Hun Lee; Byung Gook Park; Suk Kang Sung; Sang Hun Lee; Tae Hun Kim; Chang Ju Lee; Jae Seong Sim;
Retention reliability enhanced SONOS NVSM with scaled programming voltage
2002 / IEEE / 0-7803-7231-X
By: White, M.H.; Jiankang Bu;
Multilevel vertical-channel SONOS nonvolatile memory on SOI
2002 / IEEE
By: Dong Hun Lee; Jae Sung Sim; Yong Kyu Lee; Young Wug Kim; Suk Kang Sung; Byung Gook Park; Jong Duk Lee; Tae Hun Kim; Chang Ju Lee;
Time-warping averaging for quantitative evaluation of changes in LV function
2002 / IEEE / 0-7803-7612-9
By: Cerutti, S.; Baselli, G.; Gottardi, B.; Muzzupappa, S.; Porta, A.; Turiel, M.; Caiani, E.G.;
Silicon-rich-oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot carrier type non-volatile-memory cells
2002 / IEEE / 0-7803-7462-2
By: Sleeckx, E.; Rosmeulen, M.; De Meyer, K.;
An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase
2002 / IEEE / 0-7803-7462-2
By: Harber, K.; Chindalore, G.L.; Swift, C.T.; Yater, J.A.; Prinz, E.J.; Harp, T.S.; Li, C.B.; Ingersoll, P.A.; Hong, C.M.; Hoefler, A.;
Data retention, endurance and acceleration factors of NROM devices
2003 / IEEE / 0-7803-7649-8
By: Janai, M.;
Plasma-induced charging in two bit per cell SONOS memories
2003 / IEEE / 0-7803-7747-8
By: Roizin, Y.; Aloni, E.; Alfassi, S.; Yosefi, R.; Gutman, M.;
A new combination-erase technique for erasing nitride based (SONOS) nonvolatile memories
2003 / IEEE
By: Chindalore, G.L.; Burnett, D.; Swift, C.T.;
Simultaneous hot-hole injection at drain and source for efficient erase and excellent endurance in SONOS flash EEPROM cells
2003 / IEEE
By: Myung Kwan Cho; Kim, D.M.;
Silicon-nitride as a tunnel dielectric for improved SONOS-type flash memory
2003 / IEEE
By: Tsu-Jae King; Takeuchi, H.; Min She;
New nonvolatile memory with charge-trapping sidewall
2003 / IEEE
By: Fukuda, M.; Nara, Y.; Nakanishi, T.;
Implementation of high performance false contour reduction system using pattern analysis and error-predict method for PDP-HDTV
2003 / IEEE / 0-7803-7721-4
By: Bonghwang Cho; Koichi, S.; Honarn Lee; Hoyoung Lee; Taeyoung Lee;
Novel multi-bit SONOS type flash memory using a high-k charge trapping layer
2003 / IEEE / 4-89114-033-X
By: Sugizaki, T.; Tanaka, H.; Nakanishi, T.; Sugiyama, Y.; Tamura, Y.; Yamaguchi, M.; Minakata, H.; Ishidao, M.; Kobayashi, M.;
3D TFT-SONOS memory cell for ultra-high density file storage applications
2003 / IEEE / 4-89114-033-X
By: Dunton, S.V.; Eckert, V.L.; Clark, M.; Cleeves, J.M.; Herner, S.B.; Mahajani, M.; Chen, E.-H.; Nallamothu, S.; Walker, A.J.; Vyvoda, M.A.; Vienna, J.; Raghuram, U.; Radigan, S.; Petti, C.; Konevecki, M.; Knall, J.; Hu, S.; Gu, J.;
Highly manufacturable SONOS non-volatile memory for the embedded SoC solution
2003 / IEEE / 4-89114-033-X
By: Lee, S.H.; Kim, M.C.; Kang, S.T.; Suh, K.-P.; Kang, H.-K.; Lee, N.I.; Seo, M.K.; Koh, K.W.; Kim, S.H.; Kim, K.C.; Kim, S.S.; Bae, G.J.; Cho, I.W.; Kim, J.-H.; Park, I.S.;
Silicon nitride trap memory with double tunnel junction
2003 / IEEE / 4-89114-033-X
By: Ohba, R.; Fujita, S.; Koga, J.; Sugiyama, N.;
SONNS memory: improvement over SONOS flash memory
2003 / IEEE / 0-7803-7727-3
By: Tsu-Jae King; Takeuchi, H.; Min She;
Body-tied double-gate SONOS flash (omega flash) memory device built on bulk Si wafer
2003 / IEEE / 0-7803-7727-3
By: Jong-Ho Lee; Jong Duk Lee; Si Young Choi; Tai-Su Park; Il Hwan Cho;
Retention time of novel charge trapping memories using Al/sub 2/O/sub 3/ dielectrics
2003 / IEEE / 0-7803-7999-3
By: Schulz, T.; Luyken, R.J.; Landgraf, E.; Gschwandtner, A.; Hofmann, F.; Stadele, M.; Hartwich, J.; Specht, M.; Risch, L.; Kretz, J.; Reisinger, H.; Rosner, W.; Dreeskornfeld, L.;
Twin-bit silicon-oxide-nitride-oxide-silicon (SONOS) memory by inverted sidewall patterning (TSM-ISP)
2003 / IEEE
By: Jong Duk Lee; Sang Hoon Lee; Tae-Hun Kim; Yong Kyu Lee; Byung-Gook Park;
Fabrication and program/erase characteristics of 30-nm SONOS nonvolatile memory devices
2003 / IEEE
By: Soo Doo Chae; Byung-Gook Park; Yong Kyu Lee; Jong Duk Lee; Chung Woo Kim; Chang Ju Lee; Il-Han Park; Suk-Kang Sung;
Hybrid silicon nanocrystal silicon nitride dynamic random access memory
2003 / IEEE
By: Muralidhar, R.; Sadd, M.; Steimle, R.F.; White, B.E., Jr.; Straub, S.; Hradsky, B.; Rajesh Rao;
An analytical retention model for SONOS nonvolatile memory devices in the excess electron state
2003 / IEEE / 0-7803-8139-4
By: Yu Wang; White, M.H.;
A novel SONOS nonvolatile flash memory device using hot hole injection for write and tunneling to/from gate for erase
2003 / IEEE / 0-7803-8139-4
By: Krayer, J.D.; Doherty, C.L.; Khan, B.M.; Zhao, Y.; Wang, Y.; White, M.H.;
Excellent 2-bit silicon-oxide-nitride-oxide-silicon(SONOS) memory (TSM) with a 90-nm merged-triple gate
2003 / IEEE / 0-7803-8139-4
By: Jae Sung Sim; Yong Kyu Lee; Kim, K.; Donggun Park; Tae Hoon Kim; Suk Kang Sung; Sung Taeg Kang; Byung-Gook Park; Jong Duk Lee; Chilhee Chung;
Performance improvement of SONOS memory by bandgap engineering of charge-trapping layer
2004 / IEEE
By: Tung-Sheng Chen; Chin-Hsing Kao; Hsien Chung; Kuo-Hong Wu;
Design of SONOS memory transistor for terabit scale EEPROM
2003 / IEEE / 0-7803-7749-4
By: Gritsenko, V.A.;
Twin SONOS memory with 30-nm storage nodes under a merged gate fabricated with inverted sidewall and damascene process
2004 / IEEE
By: Ki Whan Song; Jae Woong Hyun; Kinam Kim; Donggun Park; Chung, C.; Kwon, O.I.; Sung Woo Lee; Yong Kyu Lee; Jeong Nam Han; Sang Yeon Han; Jeong Dong Choe; Sung Taeg Kang; Byung-Gook Park; Jong Duk Lee;
Temperature effect on read current in a two-bit nitride-based trapping Storage Flash EEPROM cell
2004 / IEEE
By: Mu-Yi Liu; Chih-Yuan Lu; Ku, J.; Wenchi Ting; Tahui Wang; Tao-Cheng Lu; Ichen Yang; Zous, N.-K.; Yao-Wen Chang;
An embedded silicon nanocrystal nonvolatile memory for the 90nm technology node operating at 6V
2004 / IEEE / 0-7803-8528-4
By: Prinz, E.J.; Yater, J.; Swift, C.T.; Rao, R.; Sadd, M.; Steimle, R.F.; Muralidhar, R.; White, B.E., Jr.; Ko-Min Chang; Hadad, D.; Huynh, T.; Paransky, M.; Merchant, T.; Rossow, M.; Anderson, S.G.H.; Parker, L.; Chen, W.; Paulson, W.; Acred, B.; Straub, S.; Hradsky, B.; Harber, K.; Grieve, L.;
Cause of erase speed degradation during two-bit per cell operation of a trapping nitride storage flash memory cell
2004 / IEEE / 0-7803-8315-X
By: Wang, T.; Yeh, C.C.; Liu, M.Y.; Yeh, Y.H.; Chen, H.Y.; Ku, J.; Huang, S.; Chou, M.H.; Zous, N.K.; Tsai, W.J.; Chih-Yuan Lu;
An experimental 256 Mb non-volatile DRAM with cell plate boosted programming technique
2004 / IEEE / 0-7803-8267-6
By: Ko, J.-B.; Shin, S.-W.; Hong, S.-H.; Ahn, J.-H.; Park, Y.-J.; Park, S.-W.; Bae, G.-H.; Kim, S.-Y.; Choi, J.-H.; Kim, S.-J.; Jang, S.-E.; Lee, S.-K.; Lee, K.-S.; Kim, Y.-W.; Lee, S.-D.;
Full integration and characterization of Localized ONO Memory (LONOM) for embedded flash technology
2004 / IEEE / 0-7803-8289-7
By: Kim, K.C.; Lee, B.J.; Kim, S.S.; Kim, J.-H.; Lim, B.R.; Cho, I.W.; Kim, C.W.; Seo, S.A.; Chae, S.D.; Kim, M.C.; Lee, D.Y.; Hwang, S.H.; Kim, S.W.; Seo, M.K.; Kang, H.-K.; Koh, K.W.; Kim, S.H.; Lee, N.I.; Bae, G.J.;
New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling
2004 / IEEE / 0-7803-8454-7
By: Chou, G.; Chiang, P.-Y.; Chung, S.S.; Lai, C.S.; Huang, C.T.; Lin, Y.T.; Hsu, C.C.-H.; Chu, C.H.; Chen, P.;

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