Your Search Results

Use materials about this topic in your textbook!

AcademicPub holds over eight million pieces of educational content - such as case studies and journal articles - for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!

Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Topic: Silicon Compounds

Results

The Deal fast-surface states are probably deep-level impurities in the semiconductor

1985 / IEEE
By: Kump, H.J.; Bernstein, J.B.;

Systematic error of time-division wattmeters when voltage and/or current are distorted

1987 / IEEE
By: Stojanovic, Borislav; Miljanic, Petar N.; Bergeest, Rainer;

A very wide-band FM generator

1987 / IEEE
By: Das Gupta, K.; Ray, S.K.;

Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film Transistors

2011 / IEEE
By: Chia-Chun Liao; Tien-Sheng Chao; Tsung-Yu Chiang; Min-Chen Lin;

Modeling of MFIS-FETs for the Application of Ferroelectric Random Access Memory

2011 / IEEE
By: Jing Sun; Xuejun Zheng;

Power Enhancement of 410-nm InGaN-Based Light-Emitting Diodes on Selectively Etched GaN/Sapphire Templates

2011 / IEEE
By: Shih-Cheng Huang; Jen-Hung Tu; Ming-Tsung Hung; Dong-Sing Wuu; Horng, R.-H.; Tsung-Yen Tsai; Li-Wei Tu; Wei-Yang Chiang;

Ultrathin Barrier Formation Using Combination of Manganese Oxide Encapsulation and Self-Aligned Copper Silicon Nitride Barriers for Copper Wiring in Future LSI Interconnects

2011 / IEEE
By: Kudo, H.; Nara, Y.; Kitada, H.; Owada, T.; Sakai, H.; Haneda, M.; Ochimizu, H.; Sunayama, M.; Tabira, T.; Ohtsuka, N.;

Carrier Dynamics Investigation on Passivation Dielectric Constant and RF Performance of Millimeter-Wave Power GaN HEMTs

2011 / IEEE
By: Saraniti, M.; Guerra, D.; Marino, F.A.; Goodnick, S.M.; Ferry, D.K.;

High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

2011 / IEEE
By: Eddy, C.R.; Hobart, K.D.; Kub, F.J.; Imhoff, E.A.; Ancona, M.G.; Myers-Ward, R.L.; Lew, K.; Gaskill, D.K.; VanMil, B.L.;

TiN Metal Gate Electrode Thickness Effect on BTI and Dielectric Breakdown in HfSiON-Based MOSFETs

2011 / IEEE
By: Ya-Chin King; Chien-Liang Chen;

Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

2011 / IEEE
By: Feldman, L.C.; Williams, J.R.; Xingguang Zhu; Ahyi, A.C.; Rozen, J.;

Observation of Extreme-Ultraviolet-Irradiation-Induced Damages on High-Dielectric-Constant Dielectrics

2011 / IEEE
By: Bing-Yue Tsui; Chih-Chan Yen; Po-Hsueh Li;

Correlation between temperature coefficient of elasticity and fourier transform infrared spectra of silicon dioxide films for surface acoustic wave devices

2011 / IEEE
By: Satoh, Y.S.; Ueda, M.U.; Matsuda, T.M.; Miura, M.M.; Hara, M.H.; Matsuda, S.M.; Hashimoto, K.H.;

Silicon Surface Passivation by Thin Thermal Oxide/PECVD Layer Stack Systems

2011 / IEEE
By: Biro, D.; Hofmann, M.; Saint-Cast, P.; Kimmerle, A.; Mack, S.; Brosinsky, C.; Wolf, A.; Schmeisser, S.;

20% Efficient Screen-Printed n-Type Solar Cells Using a Spin-On Source and Thermal Oxide/Silicon Nitride Passivation

2011 / IEEE
By: Das, A.; Rohatgi, A.; Kyungsun Ryu;

Smaller, faster, tougher

2011 / IEEE
By: Ozpineci, B.; Tolbert, L.;

Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium or Germanium Quantum Wells With Silicon-on-Insulator Waveguides

2011 / IEEE
By: Kamins, T.I.; Ren, S.; Miller, D.A.B.;

Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device

2011 / IEEE
By: Jong Kyung Park; Byung Jin Cho; Kwon Hong; Moon Sig Joo; Jae Sub Oh; Sung Kyu Im; Seok-Hee Lee; Youngmin Park;

Proton Irradiation of Ultraviolet 4H-SiC Single Photon Avalanche Diodes

2011 / IEEE
By: VanMil, B.L.; Zhao, J.H.; Xiaobin Xin; Jun Hu; Gaskill, D.K.; Eddy, C.R.; Myers-Ward, R.;

Synthesis and Magnetic Properties of Cobalt Oxide Nanowires Array With Columnar SBA-15

2011 / IEEE
By: Jin, X.H.; Ge, H.L.; Jin, D.F.; Hong, B.; Wang, X.Q.; Xu, J.C.; Huang, B.; Chen, M.; Peng, X.L.;

Extension of the ADC Charge-Collection Model to Include Multiple Junctions

2011 / IEEE
By: Edmonds, L.D.;

Characterization of Silicon Nanowire Embedded in a MEMS Diaphragm Structure Within Large Compressive Strain Range

2011 / IEEE
By: Woo-Tae Park; Liang Lou; Chengkuo Lee; Dim-Lee Kwong; Li Shiah Lim; Songsong Zhang;

Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages

2011 / IEEE
By: Chenhsin Lien; Wen-Fa Wu; Jr-Jie Tsai; Ruei-Kai Shia; Nguyen Dang Chien; Chun-Hsing Shih; Ji-Ting Liang; Yan-Xiang Luo; Wei Chang; Ming-Kun Huang;

Design and Electro-Optical Characterization of Si-Based Resonant Cavity Light Emitting Devices

2011 / IEEE
By: Muscara, A.; Coffa, S.; Leonardi, S.; Castagna, M.E.;

Spatially Flat In-Phase Supermode in Multicore Hybrid Photonic Crystal Fiber

2011 / IEEE
By: Ching-Yue Wang; Lu Chai; Yan-Feng Li; Ming-Lie Hu; Xiao-Hui Fang;

Self-Defined Short Channel Formation With Micromolded Separator and Inkjet-Printed Source/Drain Electrodes in OTFTs

2011 / IEEE
By: Minsoo Kim; Jaewook Jeong; Yongtaek Hong; Taehoon Kim; Donghyun Kim; Sang-Ho Lee;

Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices

2011 / IEEE
By: Newaz, A.K.M.; En Xia Zhang; Weller, R.A.; Reed, R.A.; Weiss, S.M.; Schrimpf, R.D.; Alles, M.L.; Pantelides, S.T.; Bolotin, K.I.; Fleetwood, D.M.; Zhang, C.X.; Bhandaru, S.; Bin Wang;

Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices

2011 / IEEE
By: En Xia Zhang; Cher Xuan Zhang; Xiao Shen; Pantelides, S.T.; Fleetwood, D.M.; Sei-Hyung Ryu; Dhar, S.; Schrimpf, R.D.;

Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides

2011 / IEEE
By: Hjalmarson, H.P.; Rax, B.G.; Adell, P.C.; Barnaby, H.J.; Esqueda, I.S.; Pease, R.L.; McLain, M.L.;

FDTD Simulation of Inverse 3-D Face-Centered Cubic Photonic Crystal Cavities

2011 / IEEE
By: Chengyong Hu; Taverne, M.P.C.; Ivanov, P.S.; Nicol, M.F.J.; Engin, E.; Cryan, M.J.; Ho, Y.D.; Rarity, J.G.; Railton, C.J.; Craddock, I.J.;

Performance Evaluation of 10-kV SiC Trench Clustered IGBT

2011 / IEEE
By: Ngwendson, L.; Nakajima, A.; Menon, K.G.; Narayanan, E.M.S.;

Experimental Demonstration of Horizontal Nanoplasmonic Slot Waveguide-Ring Resonators With Submicrometer Radius

2011 / IEEE
By: Shiyang Zhu; Kwong, D.L.; Lo, G.Q.;

Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications

2011 / IEEE
By: Gaobo Xu; Qiuxia Xu; Junfeng Li; Xiaofeng Duan; Yuan Yao; Qingqing Liang;

Tunable bulk acoustic wave resonators based on Ba_0.25Sr_0.75TiO₃ thin films and a HfO₂/SiO₂ bragg reflector

2011 / IEEE
By: Gevorgian, S.; Berge, J.;

Fabrication and Magnetic Properties of Nonmagnetic Ion Implanted Magnetic Recording Films for Bit-Patterned Media

2011 / IEEE
By: Cihan Kuru; Chulmin Choi; Young Oh; Kunbae Noh; Daehoon Hong; Sungho Jin; Tae-Yeon Seong; Sy-Hwang Liou; Li-Han Chen;

Suppression of transverse-mode spurious responses for saw resonators on SiO₂/Al/LiNbO₃ structure by selective removal of SiO₂

2011 / IEEE
By: Nakamura, H.; Hashimoto, K.; Goto, R.; Nakanishi, H.;

Magneto-Optical Study of Opal Thin Films

2011 / IEEE
By: Nguyen Duc Tho; Schwob, C.; Avoine, A.; Hoang Nam Nhat; Pham Thu Nga; Phan Tien Dung;

A Novel SONOS Gate Power MOSFET With Excellent UIS Capability

2011 / IEEE
By: Sin, J.K.O.; Ng, J.C.W.; Xianda Zhou;

Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology

2011 / IEEE
By: Gaskill, D.K.; Eddy, C.R.; Myers-Ward, R.L.; Tedesco, J.L.; Yanqing Wu; Dimitrakopoulos, C.; Farmer, D.B.; Yu-Ming Lin; Jenkins, K.A.; Avouris, P.;

Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection

2011 / IEEE
By: Wei-Cheng Lien; Jr-Hau He; Pisano, A.P.; Maboudian, R.; Senesky, D.G.; Shu-Hsien Chiu; Dung-Sheng Tsai;

High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

2011 / IEEE
By: De Doncker, R.W.; Planson, D.; Dheilly, N.; Scharnholz, S.; Paques, G.;

Hollow Waveguides With Low Intrinsic Photoluminescence Fabricated With PECVD Silicon Nitride and Silicon Dioxide Films

2011 / IEEE
By: Jenkins, M.; Keeley, J.; Shuo Liu; Holmes, M.R.; Hawkins, A.R.; Schmidt, H.; Leake, K.;

Polarization Attraction in Counterpropagating Fiber Raman Amplifiers

2011 / IEEE
By: Santagiustina, M.; Palmieri, L.; Ursini, L.; Chiarello, F.;

A Compact Fiber-Tip Micro-Cavity Sensor for High-Pressure Measurement

2011 / IEEE
By: Jun Ma; Wei Jin; Long Jin; Jian Ju;

Supported Lipid Bilayers With Controlled Curvature via Colloidal Lithography

2011 / IEEE
By: Sundh, M.; Sutherland, D.S.; Svedhem, S.; Manandhar, M.;

Reducing DRIE-Induced Trench Effects in SiC Pressure Sensors Using FEA Prediction

2011 / IEEE
By: Okojie, R.S.; Evans, L.J.; Chang, C.W.;

Software component development based on the mediator pattern design: the interactive graphic organizer case

2011 / IEEE
By: Ponce, H.R.; Almarza, F.A.; Lopez, M.J.;

Electrostatic Tuning to Achieve Higher Stability Microelectromechanical Composite Resonators

2011 / IEEE
By: Salvia, J.C.; Hopcroft, M.A.; Bongsang Kim; Melamud, R.; Hyung Kyu Lee; Kenny, T.W.;

Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

2012 / IEEE
By: Kimoto, T.; Suda, J.; Gan Feng;

Characterization and Modeling of Graphene Transistor Low-Frequency Noise

2012 / IEEE
By: Zimmer, T.; Happy, H.; Meng, N.; Maneux, C.; Grandchamp, B.; Majek, C.; Fregonese, S.; Hainaut, C.;

Effect of Deposition Gas Ratio, RF Power, and Substrate Temperature on the Charging/Discharging Processes in PECVD Silicon Nitride Films for Electrostatic NEMS/MEMS Reliability Using Atomic Force Microscopy

2011 / IEEE
By: Haixia Wang; Bhushan, B.; Papaioannou, G.J.; Zaghloul, U.; Plana, R.; Pons, P.; Coccetti, F.;

Mechanical and Ferroelectric Behavior of PZT-Based Thin Films

2011 / IEEE
By: Lambros, J.; Chasiotis, I.; Yagnamurthy, S.; Dubey, M.; Pulskamp, J.S.; Polcawich, R.G.;

Silica-Encapsulated Nanoparticle Films as Surface Modifications for MEMS

2011 / IEEE
By: Ansari, N.; Hurst, K.M.; Ashurst, W.R.; Roberts, C.B.;

Refactoring of a Beef-Cattle Farm Simulator

2011 / IEEE
By: Arroqui, M.; Abait, E.; Vidal, S.; Marcos, C.; Sampaoli, S.;

Narrow-Linewidth and Wavelength-Tunable Red-Light Emission From an Si-Quantum-Dot Embedded Oxynitride Distributed Bragg Reflector

2012 / IEEE
By: Yung-Hsiang Lin; Chung-Lun Wu; Gong-Ru Lin;

Design Consideration of Polarization Converter Based on Silica Photonic Crystal Fiber

2012 / IEEE
By: Obayya, S.S.A.; Hameed, M.F.O.;

Balancing Circuit for a 5-kV/50-ns Pulsed-Power Switch Based on SiC-JFET Super Cascode

2012 / IEEE
By: Kolar, J.W.; Bortis, D.; Aggeler, D.; Biela, J.;

Production of Multiple Diamond-Based Single-Photon Sources

2012 / IEEE
By: Castelletto, S.; Rabeau, J.; Gaebel, T.; Edmonds, A.;

Novel Package of SiC-JFET for a Switching Pulse Supply Operating at 1 MHz for an Induction Synchrotron

2012 / IEEE
By: Wake, M.; Ise, K.; Okamura, K.; Takayama, K.; Osawa, Y.; Takaki, K.;

Phase-Change Random Access Memory With Multilevel Resistances Implemented Using a Dual Phase-Change Material Stack

2012 / IEEE
By: Gyanathan, A.; Yee-Chia Yeo;

Single Germanium Quantum-dot Placement Along With Self-Aligned Electrodes for Effective Management of Single Charge Tunneling

2012 / IEEE
By: Inn-Hao Chen; Pei-Wen Li; Wei-Ting Lai; Kuan-Hung Chen;

Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures

2012 / IEEE
By: Niwa, H.; Kimoto, T.; Suda, J.; Gan Feng;

Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress

2012 / IEEE
By: Hang Hu; Hong Liao; Hong Wang; Hao Su;

Dielectric properties of XLPE/Sio2 nanocomposites based on CIGRE WG D1.24 cooperative test results

2011 / IEEE
By: Frechette, M.; Gubanski, S.; Bulinski, A.; Tanaka, T.; Han, S.J.; Sutton, S.; Reed, C.W.; Ohki, Y.; Vaughan, A.; Castellon, J.; Pelissou, S.; Tanaka, Y.; Morshuis, P.; Nagao, M.; Montanari, G.C.; Kindersberger, J.;

1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors

2012 / IEEE
By: Wernersson, L.; Borg, M.; Kim, S.; Delker, C.J.; Janes, D.B.;

Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs

2012 / IEEE
By: Sundaresan, S.G.; Singh, R.; Jeliazkov, S.; Soe, A.-M.;

Hydrogen Instability Induced by Postannealing on Poly-Si TFTs

2012 / IEEE
By: Chia-Chun Liao; Tien-Sheng Chao; Min-Chen Lin;

Relation Between High-Frequency Properties and Direction of Anisotropy Magnetic Field in Magnetic Thin Film for RF Inductor Applications

2012 / IEEE
By: Sato, T.; Sonehara, M.;

Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation

2012 / IEEE
By: Angelov, I.; Hirano, Y.; Nakayama, M.; Otsuka, H.; Kuwata, E.; Fager, C.; Gustafsson, D.; Andersson, C.M.; Yamanaka, K.; Rorsman, N.;

An Ultra-Wideband 80 GHz FMCW Radar System Using a SiGe Bipolar Transceiver Chip Stabilized by a Fractional-N PLL Synthesizer

2012 / IEEE
By: Jaeschke, T.; Pohl, N.; Aufinger, K.;

Subharmonic 220- and 320-GHz SiGe HBT Receiver Front-Ends

2012 / IEEE
By: Ojefors, E.; Pfeiffer, U.R.; Heinemann, B.;

Single-Event Response of the SiGe HBT Operating in Inverse-Mode

2012 / IEEE
By: Moen, K.A.; Phillips, S.D.; Cressler, J.D.; Lourenco, N.E.;

Power Semiconductor Devices: For Variable Speed Drives

2012 / IEEE
By: De Doncker, R.W.; Hudgins, J.L.;

Power SiC DMOSFET Model Accounting for Nonuniform Current Distribution in JFET Region

2012 / IEEE
By: Ruiyun Fu; Santi, E.; Mantooth, A.; Hudgins, J.; Grekov, A.;

Adaptive Neural Dynamic Compensator for Mobile Robots in Trajectory tracking control

2011 / IEEE
By: Rossomando, F.G.; Carelli, R.; Soria, C.;

Checkers Playing Robot: A Didactic Project

2011 / IEEE
By: Aliane, N.; Bemposta, S.;

Synchronization method with variable sampling frequency using Neuronal Networks

2011 / IEEE
By: Maestri, S.; Carugati, I.; Benedetti, M.; Carrica, D.; Donato, P.G.;

Sensor Network for Endotracheal Pressure Measurements in Hospital Environments

2011 / IEEE
By: Di Federico, M.; Falcon, A.; Obregon, P.D.P.; Julian, P.M.; Mandolesi, P.S.;

A Mathematical Solution to the MCDS Problem for Topology Construction in Wireless Sensor Networks

2011 / IEEE
By: Wightman, P.; Labrador, M.; Fabregas, A.;

Evaluation of Investments in Electricity Infrastructure Using Real Options and Multiobjective Formulation

2011 / IEEE
By: Martinez Cesena, E.A.; Davalos, F.R.;

New price system to mitigate marginal price volatility in electricity markets

2011 / IEEE
By: Vargas, A.; Reta, R.;

Pre-feasibility study of hybrid wind power-H2 system connected to electrical grid

2011 / IEEE
By: Vega, A.; Reina, P.; Conde, E.; Ramos, A.;

Thermal performance of CMOS-SOI transistors from weak to strong inversion

2012 / IEEE
By: Corcos, D.; Malits, M.; Nemirovsky, Y.; Elad, D.; Svetlitza, A.;

A BiCMOS W-Band 2� Focal-Plane Array With On-Chip Antenna

2012 / IEEE
By: Hsin-Cheng Yao; Chun-Cheng Wang; Zhiming Chen; Heydari, P.;

Photonic Bandgap Fiber for Infiltration-Free Refractive-Index Sensing

2012 / IEEE
By: Weijun Tong; Guobin Ren; Xia Yu; Yong, D.; Huiyu Zhang; Huifeng Wei; Chi Chiu Chan; Ying Zhang;

Influence of the Manufacturing Process on the Radiation Sensitivity of Fluorine-Doped Silica-Based Optical Fibers

2012 / IEEE
By: Vaccaro, L.; Marcandella, C.; Girard, S.; Alessi, A.; Ouerdane, Y.; Boukenter, A.; Cannas, M.;

Transient Radiation Responses of Optical Fibers: Influence of MCVD Process Parameters

2012 / IEEE
By: Marcandella, C.; Girard, S.; Raine, M.; Gaillardin, M.; Paillet, P.; Richard, N.; Ouerdane, Y.; Boukenter, A.; Alessi, A.;

Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

2012 / IEEE
By: Peftitsis, D.; Rabkowski, J.; Nee, H.;

An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps

2012 / IEEE
By: Yan-Hao Huang; Kung-Yen Lee;

Impact on Electromigration Performance of Combining CuSiN and Ti-Barrier Metal in Cu Interconnects

2012 / IEEE
By: Shibata, H.; Sakata, A.; Watanabe, K.; Nakao, S.; Wada, M.; Matsunaga, N.; Hayashi, Y.;

Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

2012 / IEEE
By: Ostling, M.; Zetterling, C.; Malm, B.G.; Ghandi, R.; Lanni, L.;

UIS Analysis and Characterization of the SONOS Gate Power MOSFET

2012 / IEEE
By: Sin, J.K.O.; Ng, J.C.W.; Xianda Zhou;

Thermal Stability of Silicon Carbide Power Diodes

2012 / IEEE
By: Civrac, G.; Morel, H.; Raynaud, C.; Buttay, C.; Morel, F.; Locatelli, M.-L.;

Analysis of In-vehicle Power Line Channel Response

2011 / IEEE
By: Canete, F.J.; Sanchez-Martinez, J.J.; Vallejo-Mora, A.B.; Diez, L.; Cortes, J.A.;

Dynamic Characterization of Upconversion in Highly Er-Doped Silica Photonic Crystal Fibers

2012 / IEEE
By: Andres, M. V.; Sanchez-Martin, J. A.; Diez, A.; Rebolledo, M. A.; Berdejo, V.; Valles, J. A.;

A Four-Channel 94-GHz SiGe-Based Digital Beamforming FMCW Radar

2012 / IEEE
By: Ziqiang Tong; Wagner, C.; Feger, R.; Jahn, M.; Stelzer, A.;

A Novel Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory

2012 / IEEE
By: Tien-Sheng Chao; Chi-Chang Wu; Wen-Luh Yang; Sheng-Hsien Liu;

Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

2012 / IEEE
By: Casse, M.; Coquand, R.; Barraud, S.; Poiroux, T.; Faynot, O.; Koyama, M.; Aussenac, F.; Vizioz, C.; Comboroure, C.; Maffini-Alvaro, V.; Hartmann, J.-M.;

Breakdown-Voltage-Enhancement Technique for RF-Based AlGaN/GaN HEMTs With a Source-Connected Air-Bridge Field Plate

2012 / IEEE
By: Bo Zhang; Hashemi, N.; Junmin Lee; Xu, E.; Gang Xie; Wai Tung Ng; Fu, F.Y.;

21-kV SiC BJTs With Space-Modulated Junction Termination Extension

2012 / IEEE
By: Okuda, T.; Miyake, H.; Suda, J.; Kimoto, T.; Niwa, H.;

Next Page