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Topic: Semiconductor Device Reliability

Results

The challenge of reliability
1985 / IEEE
By: Strube, A.R.;
Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices
2011 / IEEE
By: Olsen, S.H.; Escobedo-Cousin, E.; Kapoor, R.; Bull, S.J.;
Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit Simulation
2011 / IEEE
By: Shen, Z.J.; Jiann-Shiun Yuan; Boyi Yang;
Ultrathin Barrier Formation Using Combination of Manganese Oxide Encapsulation and Self-Aligned Copper Silicon Nitride Barriers for Copper Wiring in Future LSI Interconnects
2011 / IEEE
By: Kudo, H.; Nara, Y.; Kitada, H.; Owada, T.; Sakai, H.; Haneda, M.; Ochimizu, H.; Sunayama, M.; Tabira, T.; Ohtsuka, N.;
Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer
2011 / IEEE
By: Jang-Sik Lee; Jae Chul Park; Kim, D.M.; Dongsik Kong; Byeong-Hyeok Sohn; Jaeman Jang; Dae Hwan Kim; Il Hwan Cho;
Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory
2011 / IEEE
By: Carts, M.A.; Friendlich, M.; Chen, D.; Oldham, T.R.; LaBel, K.A.; Seidleck, C.M.;
Packaging Approach for Integrating 40/45-nm ELK Devices Into Wire Bond and Flip-Chip Packages
2011 / IEEE
By: Surasit, C.; Drake, K.Y.S.; Beleran, J.; Tan Hua Hong; Wilson, O.P.L.; Zhang, X.R.; Librado, G.; Mehta, G.;
Near-UV Irradiation Effects on Pentacene-Based Organic Thin Film Transistors
2011 / IEEE
By: Kovac, J.; Bari, D.; Cester, A.; Wrachien, N.; Meneghesso, G.; Donoval, D.; Jakabovic, J.;
Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices
2011 / IEEE
By: En Xia Zhang; Cher Xuan Zhang; Xiao Shen; Pantelides, S.T.; Fleetwood, D.M.; Sei-Hyung Ryu; Dhar, S.; Schrimpf, R.D.;
Impacts of Poly-Si Nanowire Shape on Gate-All-Around Flash Memory With Hybrid Trap Layer
2011 / IEEE
By: Ji-Hong Chiang; Lun-Chun Chen; Chao-Kan Yang; Yung-Chun Wu; Hung-Bin Chen; Chun-Yen Chang;
Understanding the Failure Mechanisms of Protection Diodes During System Level ESD: Toward Repetitive Stresses Robustness
2012 / IEEE
By: Anceau, C.; Perdreau, R.; Bouyssou, E.; Tremouilles, D.; Diatta, M.; Bafleur, M.;
Physical Insight Toward Heat Transport and an Improved Electrothermal Modeling Framework for FinFET Architectures
2012 / IEEE
By: Agrawal, M.; Shrivastava, M.; Rao, V.R.; Sharma, D.K.; Schulz, T.; Gossner, H.; Mahajan, S.;
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation
2012 / IEEE
By: Chini, A.; Zanoni, E.; Meneghesso, G.; Fantini, F.; Di Lecce, V.;
Radiation Effects in Si-NW GAA FET and CMOS Inverter: A TCAD Simulation Study
2012 / IEEE
By: Saxena, A.K.; Manhas, S.K.; Maheshwaram, S.; Rathod, S.S.; Kaushal, G.; Dasgupta, S.;
Abnormal Electrical and Optical Characteristics of InGaN-Based LEDs by Current Stress-Time-Dependent Annihilation
2012 / IEEE
By: Jung-Hee Lee; Jae-Hoon Lee;
Dynamic Writer Pole-Tip Protrusion Compensation by Thermal Actuator
2012 / IEEE
By: Zhimin Yuan; Shiming Ang; Chun-Lian Ong;
String Current in Decananometer nand Flash Arrays: A Compact-Modeling Investigation
2012 / IEEE
By: Paolucci, G. M.; Lacaita, A. L.; Spinelli, A. S.; Monzio Compagnoni, C.; Miccoli, C.;
Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices
2012 / IEEE
By: Grubbs, M.E.; Deal, M.; Hoffmann, T.; Ragnarsson, L.; Mitard, J.; Jing Li; Nishi, Y.; Xiao Zhang; Clemens, B.M.; Magyari-Kope, B.;
Impact of Cell Shape on Random Telegraph Noise in Decananometer Flash Memories
2012 / IEEE
By: Amoroso, S.M.; Asenov, A.; Monzio Compagnoni, C.; Mauri, A.; Brown, A.R.; Ghetti, A.;
Power Electronics Converters for Wind Turbine Systems
2012 / IEEE
By: Liserre, M.; Blaabjerg, F.; Ke Ma;
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses
2012 / IEEE
By: Roy, D.; Negre, L.; Ghibaudo, G.; Gloria, D.; Cacho, F.; Boret, S.; Jan, S.; Scheer, P.;
Process Variability Effect on Soft Error Rate by Characterization of Large Number of Samples
2012 / IEEE
By: Roche, P.; Clerc, S.; Abouzeid, F.; Glorieux, M.; Castelnovo, A.; Gasiot, G.;
Reliability Analysis of Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film Transistors
2012 / IEEE
By: Chia-Chun Liao; Yi-Hsuan Chen; Rou-Han Kuo; Li-Chen Yen; Po-Yi Kuo; Yi-Hsien Lu; Je-Wei Lin; Yi-Hong Wu; Tien-Sheng Chao;
Design-in-Reliable Millimeter-Wave Power Amplifiers in a 65-nm CMOS Process
2012 / IEEE
By: Moquillon, L.; Quemerais, T.; Huard, V.; Benech, P.; Fournier, J.;
Carbon Nanotube Robust Digital VLSI
2012 / IEEE
By: Wong, H.-S.P.; Lan Wei; Hai Wei; Patil, N.; Lin, A.; Jie Zhang; Mitra, S.;
Highly Reliable Integrated Gate Driver Circuit for Large TFT-LCD Applications
2012 / IEEE
By: Chun-Da Tu; Mao-Hsun Cheng; Chih-Lung Lin; Min-Chin Chuang;
High-Reliability Trigate Poly-Si Channel Flash Memory Cell With Si-Nanocrystal Embedded Charge-Trapping Layer
2012 / IEEE
By: Yung-Chun Wu; Hung-Bin Chen; Chun-Yen Chang; Chao-Kan Yang; Ji-Hong Chiang; Lun-Chun Chen;
Voltage Ramp Stress for Hot-Carrier Screening of Scaled CMOS Devices
2012 / IEEE
By: Kerber, A.; Cartier, E.; McMahon, W.;
Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash Array
2012 / IEEE
By: Tien-Sheng Chao; Yu-Lun Lu; Fang-Chang Hsueh; Kuan-Ti Wang; Tsung-Yu Chiang; Li-Chen Yen; Chia-Chun Liao; Yi-Hong Wu;
Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs
2012 / IEEE
By: Jin Ju Kim; Byoung Hun Lee; Groeseneken, G.; Horiguchi, N.; Togo, M.; Chiarella, T.; Young Gon Lee; Ukjin Jung; Pantisano, L.; Moonju Cho;
Electrical Degradation and Recovery of Low-Temperature Polycrystalline-Silicon Thin-Film Transistors With Various Metal Gate Patterns
2012 / IEEE
By: Jiun-Jye Chang; Chen-Chien Li; Kuei-Shu Chang-Liao;
Field Emission From a MOSFET-Controlled ZnO-Nanowire Cold Cathode
2012 / IEEE
By: Wenjie Yang; Ningsheng Xu; Shaozhi Deng; Juncong She;
A Flexible Inductive Coil Tag for Household Two-Wire Current Sensing Applications
2012 / IEEE
By: Sung-Chu Yu; Yung-Chang Chen; Yu-Ting Cheng; Shih-Hsien Cheng;
Array Test Structures for Gate Dielectric Integrity Measurements and Statistics
2012 / IEEE
By: Schroeder, D.; Domdey, A.; Hafkemeyer, K.M.; Krautschneider, W.H.;
Reliability and Performance Evaluation of QCA Devices With Rotation Cell Defect
2012 / IEEE
By: Zhuo Wang; Shuzhao Wang; Li Cai; Xiaokuo Yang; Chaowen Feng;
Field Emission Properties and Reliability of ZnO Nanorod, Nanopagoda, and Nanotip Current Emitters
2012 / IEEE
By: Tseung-Yuen Tseng; Pang Lin; I-Chuan Yao;
DRAM Data Retention and Cell Transistor Threshold Voltage Reliability Improved by Passivation Annealing Prior to the Deposition of Plasma Nitride Layer
2012 / IEEE
By: Wang, D.H.-L.; Chia-Ming Yang; Chao-Sung Lai; Chung-Yuan Lee;
The Electrochemical Effects of Immersion Au on Electroless Nickel and Its Consequences on the Hermetic Reliability of a Semiconductor Device
2012 / IEEE
By: Strandjord, A.; Teutsch, T.; Herbsommer, J.;
Study of RF Reliability of GaN HEMTs Using Low-Frequency Noise Spectroscopy
2012 / IEEE
By: Rao, H.P.; Bosman, G.;
Rapid Light Output Degradation of GaN-Based Packaged LED in the Early Stage of Humidity Test
2012 / IEEE
By: Chen, S.J.; Li, X.; Chen, B.K.; Cher Ming Tan;
New Insights Into Oxide Breakdown Current Partitioning Analysis for MOS Devices
2012 / IEEE
By: Rafik, M.; Ghibaudo, G.; Gerrer, L.;
Characterization of SOA in Time Domain and the Improvement Techniques for Using in High-Voltage Integrated Circuits
2012 / IEEE
By: Ming-Dou Ker; Wen-Yi Chen;
Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs
2012 / IEEE
By: Groeseneken, G.; San Andres, E.; Togo, M.; Toledano-Luque, M.; Kauerauf, T.; Feijoo, P.C.;
Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress
2012 / IEEE
By: Veliadis, V.; Hearne, H.; Stewart, E.J.; Snook, M.; Chang, W.; Caldwell, J.D.; Scozzie, C.; El-Hinnawy, N.; Borodulin, P.; Howell, R.S.; Urciuoli, D.; Lelis, A.; Ha, H.C.;
Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates
2012 / IEEE
By: Blevins, J.D.; Kuball, M.; Trejo, M.; Walker, D.E.; Kossler, M.; Fitch, R.; Gillespie, J.K.; Crespo, A.; Via, G.D.; Chabak, K.D.; Morkoc, H.; Ozgur, U.; Li, X.; Leach, J.; Evans, K.R.; Paskova, T.; Moereke, J.; Killat, N.; Tapajna, M.;
Characteristics of Plasma-Fluorinated Zinc Oxide Thin-Film Transistors
2012 / IEEE
By: Zhi Ye; Wong, M.;
Studies on the Thermal Cycling Reliability of BGA System-in-Package (SiP) With an Embedded Die
2012 / IEEE
By: Yong-Min Kwon; Seon Young Yu; Kyung-Wook Paik; Seogmoon Choi; Taesung Jeong; Jinsu Kim;
Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characteristics and Reliability in IGZO TFTs
2012 / IEEE
By: Min-Koo Han; Jang-Joo Kim; Jun-Hyuk Jang; Sung-Hwan Choi;
Assessment of Accrued Damage and Remaining Useful Life in Leadfree Electronics Subjected to Multiple Thermal Environments of Thermal Aging and Thermal Cycling
2012 / IEEE
By: Goebel, K.; More, V.; Vaidya, R.; Lall, P.;
Investigation of Contact Behavior and Design of Vertical Probe for Wafer Level Probing
2012 / IEEE
By: Shueei-Muh Lin; Wen-Fung Pan; Hao-Yuan Chang;
Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET
2012 / IEEE
By: Bongkoo Kang; Hyungwook Kim; Nam-Hyun Lee;
Effect of Deposition Temperature of SiOx Passivation Layer on the Electrical Performance of a-IGZO TFTs
2012 / IEEE
By: Min-Koo Han; Sung-Hwan Choi;
A Reliability Model for Power MOSFETs Working in Avalanche Mode Based on an Experimental Temperature Distribution Analysis
2012 / IEEE
By: De Caro, S.; Testa, A.; Russo, S.;
Correlation Between Oxide Trap Generation and Negative-Bias Temperature Instability
2012 / IEEE
By: Leong, K.C.; Teo, Z.Q.; Ang, D.S.; Boo, A.A.;
Towards Process Variation-Aware Power Gating
2012 / IEEE
By: Chingwei Yeh; Jinn-Shyan Wang; Yuan-Chang Chen;
Planar trapatt diodes
1974 / IEEE
By: Duigon, F.C.; Liu, S.G.;
From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation
2011 / IEEE / 978-1-4244-9949-6
By: Hoffmann, T.Y.; Grasser, T.; Roussel, P.J.; Franco, J.; Kaczer, B.; Toledano-Luque, M.; Groeseneken, G.;
The study on the parameters change of electronic components under long-term storage conditions by accelerated test
2011 / IEEE / 978-1-61284-666-8
By: Xuesong Xie; Xiaoling Zhang; Zhiguo Li; Changzhi Lv;
Effect of oxide thickness scaling on self-heating in graphene transistors
2011 / IEEE / 978-1-61284-244-8
By: Pop, E.; Dorgan, V.; Bae, M.; Islam, S.;
Characterization and reliability of nMOSFETs after substrate transfer
2011 / IEEE / 978-1-4577-0378-2
By: Hsuan-ling Kao; Kun-Lin Lin; Chang, L.C.; Lin, Y.M.; Lu, S.T.; Chen, M.T.; Ke, C.Y.; Yeh, C.S.;
Geometric-component modeling in charge-pumping technique
2011 / IEEE / 978-1-4577-0158-0
By: Tahi, H.; Djezzar, B.; Benabdelmoumen, A.;
Reliability characterizations of resistive switching devices using zinc oxide thin film
2011 / IEEE / 978-1-4577-0158-0
By: Chih-Chi Chen; Tai-Bor Wu; Wen-Yuan Chang; Peng-Wei Li; Fu-Chien Chiu; Chih-Yao Huang;
Characterization and modeling of NBTI stress, recovery, material dependence and AC degradation using R-D framework
2011 / IEEE / 978-1-4577-0158-0
By: Deora, S.; Islam, A.E.; Mahapatra, S.; Alam, M.A.; Joshi, K.; Maheta, V.D.;
Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels
2011 / IEEE / 978-1-4577-0378-2
By: Tzu-I Tsai; Tuan-Kai Su; Tiao-Yuan Huang; Horng-Chih Lin; Chun-Jung Su;
Interconnect processes and reliability for RF technology
2011 / IEEE / 978-1-4577-0158-0
By: Gambino, J.P.; Vanslette, D.; Shaw, T.; Cabral, C.; Cooney, E.; Webb, B.C.; Bolam, R.; He, J.; Anderson, F.;
Landscape for semiconductor analysis: Issues and challenges
2011 / IEEE / 978-1-4577-0158-0
By: Kinam Kim; Gyeong-Su Park;
Design of the new multifunctional charge device system for taxi
2011 / IEEE / 978-1-4244-9439-2
By: Wenhua Gao; Zhebin Sun;
Design-in reliability of modern distributed feedback (DFB) InP lasers: Can we meet up the stringent wavelength-division multiplex (WDM) requirement?
2011 / IEEE / 978-1-4244-5731-1
By: Jia-Sheng Huang;
Towards improved survivability in safety-critical systems
2011 / IEEE / 978-1-4577-1056-8
By: Quinones, E.; Cazorla, F.J.; Abella, J.; Bernat, G.; Gizopoulos, D.; Mariani, R.; Bonnot, P.; Yehia, S.; Grasset, A.;
Modeling and mitigating NBTI in nanoscale circuits
2011 / IEEE / 978-1-4577-1056-8
By: Hamdioui, S.; Khan, S.;
Reliability of ambipolar switching poly-Si diodes for cross-point memory applications
2011 / IEEE / 978-1-61284-244-8
By: Lee, H.Y.; Chen, Y.-S.; Yang, C.-L.; Kao, C.-Y.; Lee, M.H.; Tsai, M.-J.; Chen, F.;
TG-based technique for NBTI degradation and leakage optimization
2011 / IEEE / 978-1-61284-660-6
By: Ing-Chao Lin; Chin-Hung Lin; Kuan-Hui Li;
Analysis and mitigation of NBTI-induced performance degradation for power-gated circuits
2011 / IEEE / 978-1-61284-660-6
By: Marculescu, D.; Kai-Chiang Wu; Shih-Chieh Chang; Ming-Chao Lee;
Device development and pulse performance of super-12 Si SGTO
2011 / IEEE / 978-1-61284-329-2
By: O'Brien, H.; Ogunniyi, A.; Temple, V.; Shaheen, W.; Scozzie, C.J.;
A method to leverage pre-silicon collateral and analysis for post-silicon testing and validation
2011 / IEEE / 978-1-4503-0636-2
By: Bakewell, G.; Xi Chen; Dutt, J.; Yu-Chin Hsu; Bhattarai, B.; Miller, G.;
Capping layer induced degradations in nano MOSFETs with scaled IL
2011 / IEEE / 978-1-4577-0378-2
By: Che-Hua Hsu; Feng-Renn Juang; Yean-Kuen Fang; Chia-Wei Hsu; Li-Wei Cheng; Tung-Hsing Lee; Yi-Wen Chen; Chen, S.-M.; Chien-Ming Lai;
Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond
2011 / IEEE / 978-1-4244-9949-6
By: Hailing Wang; Leobandung, E.; Oldiges, P.; Haensch, W.; Chung-Hsun Lin; Khare, M.; Williams, R.; Bu, H.; Standaert, T.; Yamashita, T.; Bryant, A.; Guillorn, M.; Chang, J.;
Improvement of nano MOSFET ultra thin gate leakage and driving current with low temperature polygen process
2011 / IEEE / 978-1-4577-0378-2
By: Yean-Kuen Fang; Hung-Yu Chiu; Feng-Renn Juang;
Invited paper: Design criteria for dependable System-on-Chip architectures
2011 / IEEE / 978-1-4577-0642-4
By: Ying, H.; Jaiswal, A.; Samman, F.A.; Hollstein, T.; Hofmann, K.; Glesner, M.;
Invited paper: System-wide fault management based on IEEE P1687 IJTAG
2011 / IEEE / 978-1-4577-0642-4
By: Aleksejev, J.; Devadze, S.; Jutman, A.;
Layout aware line-edge roughness modeling and poly optimization for leakage minimization
2011 / IEEE / 978-1-4503-0636-2
By: Yongchan Ban; Jae-Seok Yang;
Advanced modeling of oxide defects for random telegraph noise
2011 / IEEE / 978-1-4577-0192-4
By: Goes, W.; Kaczer, B.; Reisinger, H.; Grasser, T.; Schanovsky, F.;
Non-volatile memory device using graphene oxide
2011 / IEEE / 978-1-4577-0378-2
By: Seul Ki Hong; Byung Jin Cho;
3D current path in stacked devices: Metrics and challenges
2011 / IEEE / 978-1-4577-0158-0
By: Infante, F.; Kor, H.B.; Lewis, D.; Gan, C.L.; Perdu, P.;
A new approach to the study of single bit failure mechanism in semiconductor devices
2011 / IEEE / 978-1-4577-0158-0
By: Hyung Do Kim; Jong Hyeop Kim; Ju Hee Lee; Won Kim; Hee Chang Jang; Soon Ju Lee; Ho Joung Kim; Hyoung Ryeun Kim;
Metal pad failure phenomena of biosensor due to spontaneous nickel silicide formation
2011 / IEEE / 978-1-4577-0158-0
By: Seok Jae Lee; Jae Sub Oh; Boung Ju Lee;
Device reliability study of GaN HEMTs using both low frequency noise and microwave noise temperature spectroscopy
2011 / IEEE / 978-1-4577-0192-4
By: Bosman, G.; Rao, H.;
Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT
2011 / IEEE / 978-3-8007-3356-9
By: Ghosh, S.; Kone, G.A.; Smith, D.; Bourqui, M.L.; Maher, H.; Zimmer, T.; Labat, N.; Marc, F.; Maneux, C.; Grandchamp, B.;
Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses
2011 / IEEE / 978-1-4577-0158-0
By: Yandong He; Ganggang Zhang;
Characterization and passivation of band gap states in metal-oxide-semiconductor field effect transistors with polycrystalline silicon channel
2011 / IEEE / 978-1-4577-0158-0
By: Jun Suk Chang; Jungwoo Kim; Dong-Hyoub Kim; Tae-Young Jang; Hoichang Yang; Hyunsang Hwang; Rino Choi; Daeseok Lee; Jae Kyeong Jeong;
Enhanced Redundant via Insertion with Multi-via Mechanisms
2011 / IEEE / 978-1-4577-0803-9
By: Ting-Feng Chang; Shanq-Jang Ruan; Shih-Hsien Yang; Tsang-Chi Kan;
On Screening Reliability Using Lithographic Process Corner Information Gleaned from Tester Measurements
2011 / IEEE / 978-1-4577-0803-9
By: Vijayakumar, P.; Suresh, V.B.; Kundu, S.;
Determining the ion angular distribution of bulk titanium DRIE with overhang SU-8 mask
2011 / IEEE / 978-1-61284-777-1
By: Jia Hu; Jing Chen; Nannan Li; Bo Yan;
Run-time FPGA health monitoring using power emulation techniques
2011 / IEEE / 978-1-61284-857-0
By: Grinschgl, J.; Krieg, A.; Haid, J.; Bock, H.; Weiss, R.; Steger, C.;
Extended Kalman Filter models and resistance spectroscopy for prognostication and health monitoring of leadfree electronics under vibration
2011 / IEEE / 978-1-4244-9827-7
By: Lall, P.; Goebel, K.; Lowe, R.;
A novel power High Electron Mobility Transistor with partial stepped recess in the drain access region for performance improvement
2011 / IEEE / 978-1-61284-653-8
By: Moghadam, H.A.; Orouji, A.A.; Rajabi, S.; Mahabadi, S.E.J.;
Research on amplitude calibration of high pulse current source for semiconductor device test system
2011 / IEEE / 978-1-4244-8161-3
By: Yu Lihong; Liu Chong; Xiang Daocai;
Thermoelectromechanical simulation of GaN HEMTs
2011 / IEEE / 978-1-61284-418-3
By: Ancona, M.G.; Binari, S.C.;
Comparative study of the wafer bonding processes for MEMS devices
2011 / IEEE / 978-1-61284-777-1
By: Dong-il Cho; Sangmin Lee; Jaehong Park;
Investigation of statistical tools to analyze repetitive HMM stress endurance of system-level ESD protection
2011 / IEEE / 978-1-58537-193-8
By: Bafleur, M.; Bouyssou, E.; Tremouilles, D.; Diatta, M.;

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