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Topic: Semiconductor Device Noise

Results

Low Frequency Noise in Strained Si Heterojunction Bipolar Transistors
2011 / IEEE
By: Persson, S.; Fjer, M.; O'Neill, A.G.; Escobedo-Cousin, E.;
Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors
2011 / IEEE
By: Puzyrev, Y.S.; Pantelides, S.T.; Schrimpf, R.D.; Fleetwood, D.M.; Zhang, E.X.; Roy, T.;
Characterization and Modeling of Graphene Transistor Low-Frequency Noise
2012 / IEEE
By: Zimmer, T.; Happy, H.; Meng, N.; Maneux, C.; Grandchamp, B.; Majek, C.; Fregonese, S.; Hainaut, C.;
Performance of a 1/4 VGA Format Long-Wavelength Infrared Antimonides-Based Superlattice Focal Plane Array
2012 / IEEE
By: Gunapala, S.D.; Ting, D.Z.; Hoglund, L.; Keo, S.A.; Mumolo, J.M.; Rafol, S.B.; Liu, J.K.; Nguyen, J.; Khoshakhlagh, A.; Soibel, A.;
Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress
2012 / IEEE
By: Hang Hu; Hong Liao; Hong Wang; Hao Su;
Heterojunction Intra-Band Tunnel FETs for Low-Voltage SRAMs
2012 / IEEE
By: Datta, S.; Kulkarni, J.P.; Gupta, S.K.; Roy, K.;
Systematic Compact Modeling of Correlated Noise in Bipolar Transistors
2012 / IEEE
By: Mukherjee, A.; Jungemann, C.; Schroter, M.; Ramonas, M.; Sakalas, P.; Herricht, J.; Moebus, K.E.;
A Comprehensive Model to Predict the Timing Resolution of SiPM-Based Scintillation Detectors: Theory and Experimental Validation
2012 / IEEE
By: Dendooven, P.; Vinke, R.; van Dam, H.T.; Seifert, S.; Schaart, D.R.; Beekman, F.J.; Lohner, H.;
Equivalent Sheet Resistance of Intrinsic Noise in Sub-100-nm MOSFETs
2012 / IEEE
By: Lee, R.; Chih-Hung Chen; Chune-Sin Yeh; Peiming Lei; Chen, D.C.; Ge Tan;
Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs
2012 / IEEE
By: Sheng-Chun Wang; Guo-Wei Huang; Bo-Yuan Chen; Kun-Ming Chen; Pin Su;
Investigation of Low-Frequency Noise Behavior After Hot-Carrier Stress in an n-Channel Junctionless Nanowire MOSFET
2012 / IEEE
By: Yoon-Ha Jeong; Jeong-Soo Lee; Jun-Sik Yoon; Sang-Hyun Lee; Ki-Hyun Kim; Myung-Dong Ko; Chan-Hoon Park;
Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
2012 / IEEE
By: Abbasi, M.; Nilsson, P.-A.; Wadefalk, N.; Moschetti, G.; Grahn, J.; Wallart, X.; Desplanque, L.;
Shot Noise Suppression in Single Electron Transistors
2012 / IEEE
By: Naeem, R.; Babiker, S.F.;
Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors
2012 / IEEE
By: Dong Kyun Sohn; Chang-Ki Baek; Dong-Won Kim; Sooyoung Park; Jeong-Soo Lee; Sang-Hyun Lee; Yoon-Ha Jeong; Kim, D.M.;
Low-Frequency Noise in SONOS-TFT With a Trigate Nanowire Structure Under Program/Erase Operation
2012 / IEEE
By: Min-Feng Hung; Yung-Chun Wu; Yong-Ren Jheng; Hsin-Hui Hu; Guo-Wei Huang;
Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz
2012 / IEEE
By: Rolland, N.; Ducatteau, D.; Danneville, F.; Grimbert, B.; Rolland, P.A.; Tagro, Y.; Zegaoui, M.; Medjdoub, F.;
340 GHz Integrated Receiver in 250 nm InP DHBT Technology
2012 / IEEE
By: Karandikar, Y.B.; Yu Yan; Zirath, H.; Pierson, R.; Urteaga, M.; Gunnarsson, S.E.;
Carbon Nanotube SRAM Design With Metallic CNT or Removed Metallic CNT Tolerant Approaches
2012 / IEEE
By: Delgado-Frias, J.G.; Zhe Zhang;
Noise measurements in charge-coupled devices
1974 / IEEE
By: Sequin, C.H.; Tompsett, M.F.; Mohsen, A.M.;
Front-end performance and charge collection properties of heavily irradiated DNW MAPS
2009 / IEEE / 978-1-4577-0493-2
By: Manghisoni, M.; Dellagiovanna, M.; Ratti, L.; Rizzo, G.; Re, V.; Morsani, F.; Bettarini, S.; Zucca, S.; Traversi, G.;
Accurately measured two-port low frequency noise and correlation of GaAs based HBTs
2011 / IEEE / 978-1-4577-0192-4
By: Parker, A.E.; Sevimli, O.; Harvey, J.T.; Fattorini, A.P.;
Effect of light illumination on the low-frequency noises in amorphous-IGZO TFTs
2011 / IEEE / 978-1-4577-0158-0
By: Hwang, C.S.; Cheong, W.S.; Park, J.M.; Cho, I.T.; Kwon, H.I.; Shin, H.; Lee, J.H.; Park, B.G.; Cho, I.H.;
Noise properties of asymmetrically recessed InP-based HEMTs for low-noise amplifiers
2011 / IEEE / 978-3-8007-3356-9
By: Sato, M.; Takahashi, T.; Hara, N.; Hirose, T.; Nakasha, Y.; Makiyama, K.;
1/f noise in strained SiGe on Insulator MOSFETs
2011 / IEEE / 978-1-4577-0192-4
By: Le Royer, C.; Martinez, F.; Gyani, J.; El Husseini, J.; Valenza, M.; Damlencourt, J.F.;
Channel thermal noise and its scaling impact on deep sub-100nm MOSFETs
2011 / IEEE / 978-1-4577-0192-4
By: Ge Tan; Chune-Sin Yeh; Peiming Lei; Bigchoug Hung; Chih-Hung Chen;
Ultra-low noise InP pHEMTs for cryogenic Deep-Space and Radio-Astronomy applications
2011 / IEEE / 978-3-8007-3356-9
By: Bolognesi, C.R.; Alt, A.R.; Barcia, A.; Lopez-Fernandez, I.; Diez, C.; Gallego, J.D.;
Low-frequency noise in graphene field-effect transistors
2011 / IEEE / 978-1-4577-0192-4
By: Balandin, A.A.; Shur, M.S.; Kachorovskii, V.Y.; Stillman, W.; Liu, G.; Rumyantsev, S.;
Defects influenced by the Jahn-Teller effect as the sources of flicker noise in GaAs based devices
2011 / IEEE / 978-1-4577-0192-4
By: Klyuev, A.V.; Shmelev, E.I.; Yakimov, A.V.;
Suppression of high-frequency electronic noise induced by 2D plasma waves in field-effect and high-electron-mobility transistors
2011 / IEEE / 978-1-4577-0192-4
By: Palermo, C.; Marinchio, H.; Gruzinskis, V.; Starikov, E.; Shiktorov, P.; Varani, L.;
Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
2011 / IEEE / 978-1-4577-0192-4
By: Vasallo, B.G.; Rodilla, H.; Gonzalez, T.; Grahn, J.; Moschetti, G.; Mateos, J.;
Random telegraph signal noise in CMOS active pixel sensors
2011 / IEEE / 978-1-4577-0192-4
By: Deen, M.J.; El-Desouki, M.M.; Marinov, O.; Majumder, S.;
Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs
2011 / IEEE / 978-1-4577-0192-4
By: Yue-Ming Hsin; Chih-Chan Hu; Yu-Chi Wang; Cheng-Kuo Lin; Chien-Chang Huang; Dong-Ming Lin;
Low-frequency noise in triple-gate n-channel bulk FinFETs
2011 / IEEE / 978-1-4577-0192-4
By: Collaert, N.; Aoulaiche, M.; Simoen, E.; Claeys, C.;
High-frequency voltage noise of nanometric Schottky-barrier diodes and heterostructure barrier varactor in cyclostationary conditions
2011 / IEEE / 978-1-4577-0192-4
By: Varani, L.; Mahi, F.Z.; Gruzhinskis, V.; Starikov, E.; Shiktorov, P.;
Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs
2011 / IEEE / 978-1-4577-0192-4
By: Simoen, E.; Mercha, A.; Collaert, N.; Carin, R.; Benfdila, A.; Claeys, C.; Cretu, B.; Achour, H.; Talmat, R.; Routoure, J.;
Low-frequency noise in FinFETs with PtSi Schottky-barrier source/drain contacts
2011 / IEEE / 978-1-4577-0192-4
By: Malm, B.G.; Ostling, M.; Olyaei, M.;
Frozen noise origin of temporal low-frequency noise in electronic devices
2011 / IEEE / 978-1-4577-0192-4
By: Deen, M.J.; Marinov, O.;
Noise spectroscopy of traps in silicon nanowire field-effect transistors
2011 / IEEE / 978-1-4577-0192-4
By: Li, J.; Pud, S.; Vitusevich, S.; Mantl, S.; Offenhausser, A.; Feste, S.; Petrychuk, M.;
Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET
2011 / IEEE / 978-1-4577-0192-4
By: Pascual, E.; Martin, M.J.; Rengel, R.;
Noise and Terahertz rectification in semiconductor diodes and transistors
2011 / IEEE / 978-1-4577-0192-4
By: Mateos, J.; Gonzalez, T.; Iniguez-de-la-Torre, I.;
Noise characterisation of transport properties in single wall carbon nanotube field-effect transistors
2011 / IEEE / 978-1-4577-0192-4
By: Sydoruk, V.A.; Vitusevich, S.A.; Offenhausser, A.; Bosman, G.; Ural, A.; Petrychuk, M.V.;
Flicker noise due to variable range hopping in organic thin-film transistors
2011 / IEEE / 978-1-4577-0192-4
By: Marinov, O.; Deen, M.J.;
Analysis of low-frequency noise in organic field-effect transistors combining static and noise data
2011 / IEEE / 978-1-4577-0192-4
By: Gwoziecki, R.; Tsukagoshi, K.; Minari, T.; Ghibaudo, G.; Coppard, R.; Balestra, F.; Xu, Y.; Chroboczek, J.A.;
Low frequency noise modeling of SOI MOSFETs using Green's function approach
2011 / IEEE / 978-1-4577-0192-4
By: Faynot, O.; Iniguez, B.; Lime, F.; Ritzenthaler, R.; Pascal, F.; ElHusseini, J.; Bawedin, M.; Armand, J.; Martinez, F.; Valenza, M.;
Low-frequency noise and stress-induced degradation in LDMOS
2011 / IEEE / 978-1-4577-0192-4
By: Huang, W.; Khan, T.; Amey, B.; Hou, F.; Hao, P.; Celik-Butler, Z.; Mahmud, M.I.;
Device reliability study of GaN HEMTs using both low frequency noise and microwave noise temperature spectroscopy
2011 / IEEE / 978-1-4577-0192-4
By: Bosman, G.; Rao, H.;
Low-frequency noise in GaN diodes
2011 / IEEE / 978-1-4577-0192-4
By: Surya, C.; Fong, W.K.; Leung, K.K.;
The low frequency noise behaviour of SiC MESFETs
2011 / IEEE / 978-1-4577-0192-4
By: Cichosz, J.; Konczakowska, A.; Stawarz-Graczyk, B.; Szewczyk, A.; Flisikowski, P.; Dokupil, D.;
High-speed InP-HEMTs: Low-noise performance and cryogenic operation
2011 / IEEE / 978-3-8007-3356-9
By: Mimura, T.; Watanabe, I.; Endoh, A.; Matsui, T.;
Modeling statistical distribution of random telegraph noise magnitude
2011 / IEEE / 978-1-61284-418-3
By: Inoue, Y.; Ishikawa, K.; Tanizawa, M.; Sonoda, K.;
High mobility channel from the prospective of random telegraph noise
2011 / IEEE / 978-1-4577-0708-7
By: Oates, A.; Campbell, J.P.; Cheung, K.P.;
Noise characterization of Ge/Si photodetectors
2011 / IEEE / 978-1-4244-8340-2
By: Colace, L.; Assanto, G.; Scacchi, A.;
Modeling high-frequency noise in SiGe HBTs using delayed minority charge
2011 / IEEE / 978-1-61284-166-3
By: Kumar, K.; Chakravorty, A.;
A new technique for characterizing very low frequency noise of bipolar junction transistors
2011 / IEEE / 978-1-61284-166-3
By: Heringa, A.; Mertens, H.; Zegers-van Duijnhoven, A.; Tuinhout, H.;
Characterization and modeling of SiGe HBT low-frequency noise in inverse operating condition
2011 / IEEE / 978-1-61284-166-3
By: Babcock, J.A.; Jin Tang; Cestra, G.; Smith, L.; Krakowski, T.L.;
Compact noise modeling of SiGe Heterojunction Bipolar Transistors: Relevance of base-collector shot noise correlation and non quasi-static effects in the quasi-neutral emitter
2011 / IEEE / 978-1-61284-166-3
By: Vitale, F.; van der Toorn, R.; Pijper, R.;
1/� noise measurements of bonded SOS and Epi SOS fully-depleted MOSFETs to 10 MHz
2011 / IEEE / 978-1-61284-760-3
By: Rotella, F.M.; Roach, J.W.; Chen, L.-W.;
Bias point optimization for low power / low noise applications of advanced SiGe HBT
2011 / IEEE / 978-2-87487-023-1
By: Rolland, P.; Rolland, N.; Danneville, F.; Waldhoff, N.; Aufinger, K.;
Multiple polynomial regression for modeling a MOSFET in saturation to validate the Early voltage
2011 / IEEE / 978-1-4577-1417-7
By: Rahman, A.S.M.Z.; Muntasir, T.; Khan, M.A.H.; Layek, M.A.; Acharjee, U.K.;
Comparison of charge pumping and 1/� noise in irradiated Ge pMOSFETs
2011 / IEEE / 978-1-4577-0586-1
By: Galloway, K.F.; Schrimpf, R.D.; Fleetwood, D.M.; En Xia Zhang; Simoen, E.; Francis, S.A.; Claeys, C.; Cher Xuan Zhang; Mitard, J.;
Low frequency noise investigation of AlGaN/GaNOn silicon Schottky diode
2011 / IEEE / 978-1-61284-865-5
By: Yihu Li; Lo, P.; Todd, S.; Geok Ing Ng; Wang Ling Goh; Lei Wang; Arulkumaran, S.; Yong-Zhong Xiong;
Low-frequency noise in high-k LaLuO3/TiN MOSFETs
2011 / IEEE / 978-1-4577-1756-7
By: Olyaei, M.; Malm, B.G.; Litta, E.D.; Hellstrom, P.-E.; Ostling, M.;
Enhanced energy range thermoelectrically cooled silicon X-ray detectors
2011 / IEEE / 978-1-4673-0120-6
By: Pantazis, J.; Huber, A.; Redus, R.; Pantazis, T.;
A cryogenic ultra-low noise CMOS preamplifier for point-contact HPGe detectors
2011 / IEEE / 978-1-4673-0120-6
By: Yinong Liu; Yulan Li; Zhi Deng; Xuezhou Zhu; Jin Li; Qian Yue;
Very low frequency noise characterization of semiconductor devices using DC parameter analyzers
2012 / IEEE / 978-1-4673-1030-7
By: Heringa, A.; Zegers-van Duijnhoven, A.; Tuinhout, H.;
Compact modeling based extraction of RF noise in SiGe HBT terminal currents
2012 / IEEE / 978-1-4577-1318-7
By: Guofu Niu; Ziyan Xu;
Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation
2012 / IEEE / 978-1-4577-1117-6
By: Claeys, C.; Pavanello, M.A.; Doria, R.T.; de Saouza, M.A.S.; Simoen, E.;
New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs
2012 / IEEE / 978-1-4577-2084-0
By: Changze Liu; Xiaoqing Xu; Jibin Zou; Runsheng Wang; Jinhua Liu; Ru Huang; Yangyuan Wang; Hanming Wu;
Comprehensive investigations on neutral and attractive traps in random telegraph signal noise phenomena using (100)- and (110)-orientated CMOSFETs
2012 / IEEE / 978-1-4673-0847-2
By: Tatsumura, K.; Hirano, I.; Chen, J.; Mitani, Y.;
Continuous characterization of MOSFET from low-frequency noise to thermal noise using a novel measurement system up to 100 MHz
2012 / IEEE / 978-1-4673-0847-2
By: Ohmori, K.; Yamada, K.; Wei Feng; Hasunuma, R.;
A Comparative Study of NBTI and RTN Amplitude Distributions in High- $\kappa$ Gate Dielectric pMOSFETs
2012 / IEEE
By: Chung, Y.T.; Chiu, J.P.; Yu, K.F.; Lu, C.Y.; Min-Cheng Chen; Tahui Wang;
Low-Frequency Noise in Enhancement-Mode GaN MOS-HEMTs by Using Stacked $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{Ga}_{2}\hbox{O}_{3}/\hbox{Gd}_{2}\hbox{O}_{3}$ Gate Dielectric
2012 / IEEE
By: Hsien-Chin Chiu; Jia-Hsuan Wu; Chih-Wei Yang; Fan-Hsiu Huang; Hsuan-Ling Kao;
High-frequency noise in nanoscale metal oxide semiconductor field effect transistors
2007 / American Institute of Physics
By: Reza Navid; Christoph Jungemann; Thomas H. Lee; Robert W. Dutton;
Effect of gate-drain/source overlap on the noise in 90nm N-channel metal oxide semiconductor field effect transistors
2006 / American Institute of Physics
By: R. Srinivasan; Navakanta Bhat;
X-band low-phase noise oscillator employing substrate integrated waveguide dual-mode filter
2015 / IEEE
By: Yang, Z.; Yang, T.; Dong, J.; Luo, B.;
The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs
2015 / IEEE
By: Thorsell, M.; Axelsson, O.; Rorsman, N.; Andersson, K.;
Broadband Noise Performance of Heterogeneously Integrated InP BiCMOS DHBTs
2014 / IEEE
By: Coskun, A.H.; Bardin, J.C.; Li, J.C.; Boynton, Z.G.; Ayata, M.;
Bistability and low-frequency fluctuations in semiconductor lasers with optical feedback: a theoretical analysis
1988 / IEEE
By: Mork, J.; Christiansen, P.L.; Tromborg, B.;
Low-frequency intensity noise in semiconductor lasers
1988 / IEEE
By: Fronen, R.J.; Vandamme, L.K.J.;
Optimization of CMOS arbiter and synchronizer circuits with submicrometer MOSFETs
1988 / IEEE
By: Sakurai, T.;
Field and spatial geometry dependencies of the electron and hole ionization rates in GaAs/AlGaAs multiquantum well APD's
1988 / IEEE
By: Brennan, K.F.; Wang, Y.;
Theory and experiments of 1/f noise in Schottky-barrier diodes operating in the thermionic-emission mode
1988 / IEEE
By: Van Der Ziel, A.; Bosman, G.; Luo, M.-Y.; Hench, L.L.;
Theory of the temporal response of a simple multiquantum-well avalanche photodiode
1988 / IEEE
By: Brennan, K.F.; Khorsandi, T.; Saleh, B.E.A.; Teich, M.C.; Wang, Y.;
Current-voltage characteristics and noise performance of a static induction transistor for video frequency
1988 / IEEE
By: Akiyama, T.; Tamamushi, T.; Nishizawa, J.;
Noise modeling and measurement techniques (HEMTs)
1988 / IEEE
By: Cappy, A.;
Realization of ultrahigh coherence in semiconductor lasers by negative electrical feedback
1988 / IEEE
By: Ohtsu, M.;
Electrical feedback and its network analysis for linewidth reduction of a semiconductor laser
1988 / IEEE
By: Ohtsu, M.; Tabuchi, N.;
Theoretical investigation of local oscillator intensity noise in optical homodyne systems
1988 / IEEE
By: Gross, R.; Patzak, E.; Meissner, P.;
Dispersion penalty for 1.3 mu m lightwave systems with multimode semiconductor lasers
1988 / IEEE
By: Anthony, P.J.; Agrawal, G.P.; Shen, T.-M.;
Performance implications of mode partition fluctuations in nearly single longitudinal mode lasers
1988 / IEEE
By: Cartledge, J.C.;
Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources
1988 / IEEE
By: van der Ziel, A.;
A 16-Mbit DRAM with a relaxed sense-amplifier-pitch open-bit-line architecture
1988 / IEEE
By: Yamamoto, H.; Inoue, M.; Odanaka, S.; Ogawa, S.; Fuse, G.; Aoi, N.; Nakao, I.; Ueno, A.; Kubota, M.; Fukumoto, M.; Akamatsu, H.; Matsushima, J.; Fujiwara, A.; Yamauchi, H.; Kotani, H.; Yamada, T.;
Multistage digital prefiltering of noisy tachometer signals
1988 / IEEE
By: Ovaska, S.J.;
The effects of polarization control of the transfer function and the phase induced intensity noise of a fiber-optic recirculating delay line
1988 / IEEE
By: Arie, A.; Tur, M.;
Non-Gaussian statistics of frequency fluctuations in line-narrowed semiconductor lasers
1988 / IEEE
By: Piazzolla, S.; Mecozzi, A.; Spano, P.; Sapia, A.;
Optoelectronic properties of semiconductor lasers butt-coupled to optical fibers
1988 / IEEE
By: Alping, A.; Andrekson, P.A.;
A pulsed interface-probing technique for MOS interface characterization at mid-gap levels
1988 / IEEE
By: Cilingiroglu, U.;
Deep level transient spectroscopy: instrumentation induced anomalous characteristics
1988 / IEEE
By: Maguire, H.G.; Marshall, A.;
Recent progress in semiconductor laser amplifiers
1988 / IEEE
By: Saitoh, T.; Mukai, T.;
Investigations on the dominant dispersion penalties occurring in multigigabit direct detection systems
1988 / IEEE
By: Heidemann, R.;

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