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Topic: Schottky Diodes

Results

Modeling of the HP-1430A feedthrough wide-band (28-ps) sampling head

1982 / IEEE
By: Riad, S.M.;

A digital profiler for the characterization of semiconductors

1981 / IEEE
By: Matsinger, B.; Masse, D.J.; Matsinger, J.;

A sensitive analog comparator

1982 / IEEE
By: Schoenwetter, H.K.;

A high-performance digital phase comparator

1987 / IEEE
By: Coffield, F.E.;

Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness Approach

2011 / IEEE
By: Po-Shun Chiu; Huey-Ing Chen; Chi-Shiang Hsu; Chien-Chang Huang; Po-Cheng Chou; Tai-You Chen; Wen-Chau Liu; Rong-Chau Liu;

Self-Powered Rectifier for Energy Harvesting Applications

2011 / IEEE
By: Wardlaw, J.L.; Karsilayan, A.I.;

Technology, Capabilities, and Performance of Low Power Terahertz Sources

2011 / IEEE
By: Chattopadhyay, G.;

A Low VSWR 2SB Schottky Receiver

2011 / IEEE
By: Stake, J.; Emrich, A.; Sobis, P.J.;

The terahertz frontier

2011 / IEEE
By: Lee, M.; Wanke, M.C.;

Smaller, faster, tougher

2011 / IEEE
By: Ozpineci, B.; Tolbert, L.;

A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS

2011 / IEEE
By: Yaming Zhang; Ruonan Han; O, K.K.; Brown, E.; Knap, W.; Videlier, H.; Coquillat, D.;

Impact of a Germanium and Carbon Preamorphization Implant on the Electrical Characteristics of NiSi/Si Contacts With a Presilicide Sulfur Implant

2011 / IEEE
By: Qian Zhou; Yi Tong; Yee-Chia Yeo; Henry, T.; Thanigaivelan, T.; Chua, L.H.;

Design and Fabrication of Frequency Multiplier Based on Composite Right/Left-Handed Nonlinear Transmission Lines

2011 / IEEE
By: Junrong Dong; Jie Huang; Tianyi Guo; Chao Tian; Haiying Zhang; Hao Yang;

Single Carbon Nanotube Schottky Diode Microwave Rectifiers

2011 / IEEE
By: Fuhrer, M.S.; Anlage, S.M.; Cobas, E.D.;

A 122 GHz Sub-Harmonic Mixer With a Modified APDP Topology for IC Integration

2011 / IEEE
By: Scheytt, C.J.; Yaoming Sun;

Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers

2011 / IEEE
By: Baliga, B.J.; Ozbek, A.M.;

High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

2011 / IEEE
By: Jen-Inn Chyi; Hsueh-Hsing Liu; Geng-Yen Lee;

Reduction of Impact Ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design

2012 / IEEE
By: Khalid, A.; Montes, M.; Stephen, A.; Dunn, G.; Li, C.; Kuball, M.; Hopper, R.H.; Oxley, C.H.; Cumming, D.;

Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness

2012 / IEEE
By: Hongkai Lai; Cheng Li; Wei Huang; Zheng Wu; Songyan Chen;

2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors

2012 / IEEE
By: Huby, N.; Scarpa, G.; Tallarida, G.; Lugli, P.; Guziewicz, E.; Arcari, M.; Godlewski, M.; Krajewski, T.A.;

Electrically Small GPS L1 Rectennas

2011 / IEEE
By: Ziolkowski, R.W.; Ning Zhu; Hao Xin;

Low-Power Wireless Power Delivery

2012 / IEEE
By: Falkenstein, E.; Popovic, Z.; Roberg, M.;

High-Efficiency Harmonically Terminated Diode and Transistor Rectifiers

2012 / IEEE
By: Falkenstein, E.A.; Ramos, I.; Reveyrand, T.; Roberg, M.; Popovic, Z.;

X-Band Planar Rectenna

2011 / IEEE
By: Monti, G.; Spartano, M.; Tarricone, L.;

Potentials of an Adaptive Rectenna Circuit

2011 / IEEE
By: Verdier, J.; Vollaire, C.; Marian, V.; Allard, B.;

Performance Improvements in an Arc-Welding Power Supply Based on Resonant Inverters

2012 / IEEE
By: Casanueva, R.; Navarro-Crespin, A.; Azcondo, F.J.;

Low-Frequency Noise in Schottky-Barrier-Based Nanoscale Field-Effect Transistors

2012 / IEEE
By: Dubois, E.; Larrieu, G.; Clement, N.;

Subnanosecond Pulse Generators for Impulsive Wireless Power Transmission and Reception

2011 / IEEE
By: Chun-Chih Lo; Yu-Lin Yang; Chin-Lung Yang;

A Fully Autonomous Integrated Interface Circuit for Piezoelectric Harvesters

2012 / IEEE
By: Hehn, T.; Manoli, Y.; Frey, A.; Kuehne, I.; Marinkovic, D.; Maurath, D.; Hagedorn, F.;

Compact, High Impedance and Wide Bandwidth Detectors for Characterization of Millimeter Wave Performance

2012 / IEEE
By: Chieh-Lin Wu; Chikuang Yu; O, K.K.; Shichijo, H.; Choong-Yul Cha; Yang-Hun Yun; Kshattry, S.;

An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps

2012 / IEEE
By: Yan-Hao Huang; Kung-Yen Lee;

Microscopic Identification of Hot Spots in Multibarrier Schottky Contacts on Pulsed Laser Deposition Grown Zinc Oxide Thin Films

2012 / IEEE
By: Muller, S.; Grundmann, M.; Lenzner, J.; Breitenstein, O.; von Wenckstern, H.;

Thermal Stability of Silicon Carbide Power Diodes

2012 / IEEE
By: Civrac, G.; Morel, H.; Raynaud, C.; Buttay, C.; Morel, F.; Locatelli, M.-L.;

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

2012 / IEEE
By: Zhiqiang Li; Ru Huang; Xing Zhang; Ming Li; Xia An; Quanxin Yun; Min Li; Meng Lin;

Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages

2012 / IEEE
By: Shichijo, H.; Ruonan Han; Wooyeol Choi; Chuan Lee; Kenneth, K.O.;

Monolithic HBV-Based 282-GHz Tripler With 31-mW Output Power

2012 / IEEE
By: Vukusic, J.; Stake, J.; Hanning, J.; Olsen, �; Bryllert, T.;

Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review

2012 / IEEE
By: Sacchetto, D.; Leblebici, Y.; De Micheli, G.;

Comparative Study of Silicon-Based Ultraviolet Photodetectors

2012 / IEEE
By: Lei Shi; Nihtianov, S.;

A Broadband, Low Noise, Integrated 340 GHz Schottky Diode Receiver

2012 / IEEE
By: Stake, J.; Emrich, A.; Wadefalk, N.; Sobis, P.J.;

Strategy for Microwave Energy Harvesting From Ambient Field or a Feeding Source

2012 / IEEE
By: Verdier, J.; Vollaire, C.; Allard, B.; Marian, V.;

Design Optimization and Implementation for RF Energy Harvesting Circuits

2012 / IEEE
By: Chowdhury, K.R.; Lewis, D.R.; Muncuk, U.; Nintanavongsa, P.;

Voltage Reversal in Unbalanced Rectenna Association

2012 / IEEE
By: Allard, B.; Verdier, J.; Buret, F.; Vollaire, C.; Marian, V.; Degrenne, N.;

Temperature and Light Induced Effects on the Capacitance of 4H-SiC Schottky Photodiodes

2012 / IEEE
By: Sciuto, A.; Mazzillo, M.; Raineri, V.; Roccaforte, F.; Catania, G.;

HBM ESD Robustness of GaN-on-Si Schottky Diodes

2012 / IEEE
By: Scholz, M.; Denis, M.; Linten, D.; Srivastava, P.; Griffoni, A.; Shih-Hung Chen; Groeseneken, G.; Decoutere, S.; Van Hove, M.; Pogany, D.; Bychikhin, S.; Thijs, S.; Hopper, P.; Vashchenko, V.A.; Concannon, A.; Lafonteese, D.; Gallerano, A.;

Fast Terahertz Continuous-Wave Detector Based on Weakly Ionized Plasma

2012 / IEEE
By: Wei Shi; Lei Hou;

Conduction Mechanism of Se Schottky Contact to n-Type Ge

2012 / IEEE
By: Yang-Kyu Park; Janardhanam, V.; Chel-Jong Choi; Kwang-Soon Ahn; Hyung-Joong Yun;

Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs

2012 / IEEE
By: Hellings, G.; Scholz, M.; Linten, D.; Yueh-Chin Lin; Shih-Hung Chen; Groeseneken, G.; Chang, E.Y.;

Comparator-Controlled Rectification at Monolithic Buck Converters for Higher Input Voltages

2012 / IEEE
By: Gaberl, W.; Enne, R.; Zimmermann, H.;

Practical Design and Implementation Procedure of an Interleaved Boost Converter Using SiC Diodes for PV Applications

2012 / IEEE
By: Escobar, G.; Pettersson, S.; Breuninger, H.; Ho, C.N.; Coccia, A.; Serpa, L.A.;

Design and Characterization of a Room Temperature All-Solid-State Electronic Source Tunable From 2.48 to 2.75 THz

2012 / IEEE
By: Ward, J.S.; Pearson, J.; Siles, J.V.; Mehdi, I.; Maestrini, A.; Siegel, P.; Lin, R.; Schlecht, E.; Chattopadhyay, G.; Gill, J.; Lee, C.; Thomas, B.;

Enhanced Electrical Characteristics of AlGaN-Based SBD With In Situ Deposited Silicon Carbon Nitride Cap Layer

2012 / IEEE
By: Jae-Hyun Jeong; Jae-Hoon Lee; Jung-Hee Lee;

840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate

2012 / IEEE
By: Jae-Hoon Lee; Jung-Hee Lee; Hee-Sung Kang; Jong-Kyu Yoo;

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

2012 / IEEE
By: Wurfl, J.; Meliani, C.; Wentzel, A.; Zhytnytska, R.; Hilt, O.; Bahat-Treidel, E.; Trankle, G.;

Electro-Thermal Model for Multi-Anode Schottky Diode Multipliers

2012 / IEEE
By: Aik Yean Tang; Stake, J.; Mehdi, I.; Gill, J.; Schlecht, E.; Choonsup Lee; Chattopadhyay, G.; Lin, R.;

A Linear Assisted DC/DC Converter for Envelope Tracking and Envelope Elimination and Restoration Applications

2012 / IEEE
By: Sebastian, J.; Rodriguez, A.; Rodriguez, M.; Miaja, P.F.;

Analysis of the Rectifier Circuit Valid Down to Its Low-Voltage Limit

2012 / IEEE
By: Galup-Montoro, C.; de Carli, L.G.; Cardoso, A.J.; Schneider, M.C.;

A Self-Powered Power Conditioning IC for Piezoelectric Energy Harvesting From Short-Duration Vibrations

2012 / IEEE
By: Meng Tong Tan; Yuan Gao; Darmayuda, I.M.; Chun-Huat Heng; Minkyu Je; Yuanjin Zheng; San-Jeow Cheng;

Fiber-optics coupled detector arrays using thin film cadmium sulfide Schottky diodes

1974 / IEEE
By: Palmer, J.P.;

Substrate fed logic - An improved form of injection logic

1974 / IEEE
By: Walsh, P.S.; Kennedy, L.W.; Blatt, V.; Ashford, R.C.A.;

GIMIC-O - A low cost non-epitaxial bipolar LSI technology suitable for application to TTL circuits

1974 / IEEE
By: Pritchett, R.L.; Panousis, P.T.;

Preparation of GaAs microwave devices by molecular beam epitaxy

1974 / IEEE
By: Dunn, C.N.; Ballamy, W.C.; Cho, A.Y.; Schroeder, W.E.; Kuvas, R.L.;

A five-port reflectometer for communication receiver applications

2011 / IEEE / 978-1-4577-0411-6
By: Osman, L.; Sfar, I.; Gharsallah, A.;

Silicon carbide inverter with two series Z-networks

2011 / IEEE / 978-1-4244-9312-8
By: Barlik, R.; Zdanowski, M.; Rabkowski, J.;

Evaluation of SiC JFETs and SiC Schottky diodes for wind generation systems

2011 / IEEE / 978-1-4244-9312-8
By: Adamowicz, M.; Krzeminski, Z.; Rutkowski, M.; Pietryka, J.; Giziewski, S.;

Use of self-aligned technology in GaAs scotty diode fabrication

2011 / IEEE / 978-1-61284-795-5
By: Yunusov, I.V.; Arykov, V.S.; Gavrilova, A.M.;

A fuzzy control maximum power point tracking photovoltaic system

2011 / IEEE / 978-1-4244-7317-5
By: Yu-Kang Lo; Purnama, I.; Huang-Jen Chiu;

Resonant electron-emission from a flat surface AlN/GaN system with carbon nanotube gate electrode

2011 / IEEE / 978-3-00-035081-8
By: Yilmazoglu, O.; Litovchenko, V.; Semenenko, M.; Evtukh, A.; Pavlidis, D.; Considine, L.; Joshi, R.; Mimura, H.; Hartnagel, H.L.; Schneider, J.J.;

High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor

2011 / IEEE / 978-3-8007-3356-9
By: Grym, J.; Yatskiv, R.; Piksova, K.; Zdansky, K.;

Experimental characterization of nonlinear transmission lines for amplification of short pulses

2011 / IEEE / 978-1-61284-774-0
By: Nakagawa, S.; Narahara, K.;

Design of a GPS L1 rectenna by using a metamaterial-inspired eclectically small antenna

2011 / IEEE / 978-1-4244-9563-4
By: Ziolkowski, R.W.; Peng Jin; Ning Zhu; Hao Xin;

Experimental investigation of inductorless, single-stage boost rectification for sub-mW electromagnetic energy harvesters

2011 / IEEE / 978-1-61284-660-6
By: Proynov, P.P.; Szarka, G.D.; McNeill, N.; Burrow, S.G.; Stark, B.H.;

On increasing the power available to an intrinsically safe wireless HART adapter

2011 / IEEE / 978-1-4244-9312-8
By: Maret, Y.; Bloch, R.; Schrag, D.;

Cation-based resistive memory

2011 / IEEE / 978-1-4577-0378-2
By: Kozicki, M.N.;

Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications

2011 / IEEE / 978-1-4577-0192-4
By: Grajal, J.; Perez, S.; Pardo, D.; Gonzalez, T.; Mateos, J.;

High-frequency voltage noise of nanometric Schottky-barrier diodes and heterostructure barrier varactor in cyclostationary conditions

2011 / IEEE / 978-1-4577-0192-4
By: Varani, L.; Mahi, F.Z.; Gruzhinskis, V.; Starikov, E.; Shiktorov, P.;

Diode modeling for rectenna design

2011 / IEEE / 978-1-4244-9563-4
By: Kai Chang; Hansen, J.;

Observation of random telegraph signal in reverse polarized Silicon Carbide Schottky diodes

2011 / IEEE / 978-1-4577-0192-4
By: Szewczyk, A.; Cichosz, J.;

Calorimetric comparison of the use of Silicon Carbide diodes in a 100kW matrix converter for aerospace applications

2011 / IEEE / 978-90-75815-14-6
By: Clare, J.; Wheeler, P.; de Lillo, L.; Empringham, L.;

A 2.5kV to 22V, 1kW radar decoy power supply using silicon carbide semiconductor devices

2011 / IEEE / 978-90-75815-14-6
By: Jain, A.K.; Ratliff, B.; Jones, M.; McIntosh, D.;

Analysis of energy losses for SiC and Si diodes in half-bridge modules and future applications

2011 / IEEE / 978-90-75815-14-6
By: Ibanez, P.; Apinaniz, S.; Pujana, A.; Gabiola, I.; Sierra, M.T.;

Low power rectenna topologies for medium range wireless energy transfer

2011 / IEEE / 978-90-75815-14-6
By: Marian, V.; Verdier, J.; Allard, B.; Vollaire, C.;

High-temperature behavior of SiC power diodes

2011 / IEEE / 978-90-75815-14-6
By: Lazar, M.; Morel, H.; Raynaud, C.; Buttay, C.; Bergogne, D.; Civrac, G.;

A novel low-power active bypass approach for photovoltaic panels

2011 / IEEE / 978-1-4244-8930-5
By: Guerriero, P.; Daliento, S.; d'Alessandro, V.; Gargiulo, M.;

Improved efficiency in the CMOS cross-connected bridge rectifier for RFID applications

2011 / IEEE / 978-83-932075-2-7
By: Borg, J.; Raben, H.; Johansson, J.;

Power processing circuits for wireless sensor nodes utilizing energy harvested from mechanical vibrations

2011 / IEEE / 978-83-932075-2-7
By: Napieralski, A.; Krasinski, P.; Pekoslawski, B.;

Novel SPICE dynamic model of SiC merged PiN schottky diodes

2011 / IEEE / 978-83-932075-2-7
By: Starzak, L.; Zubert, M.; Napieralski, A.; Janicki, M.; Napieralska, M.; Jablonski, G.;

Design and technology of high-power silicon devices

2011 / IEEE / 978-83-932075-2-7
By: Vobecky, J.;

Demonstration of 25 W/cm³ class all-SiC three phase inverter

2011 / IEEE / 978-90-75815-14-6
By: Takao, K.; Shinohe, T.;

The 1200V direct-driven SiC JFET power switch

2011 / IEEE / 978-90-75815-14-6
By: Kirchner, U.; Siemieniec, R.;

Modularized design consideration of a general-purpose, high-speed phase-leg PEBB based on SiC MOSFETs

2011 / IEEE / 978-90-75815-14-6
By: Zheng Chen; Zhiyu Shen; Boroyevich, D.; Danilovic, M.;

Performance and losses analysis of charging and discharging mode of a bidirectional DC/DC fullbridge converter using PWM switching pattern

2011 / IEEE / 978-1-61284-247-9
By: Haghbin, S.; Thiringer, T.; Erfani, M.J.;

W-band radiometer system with switching front-end for multi-load calibration

2011 / IEEE / 978-1-4577-1005-6
By: Leuther, A.; Tessmann, A.; Hulsmann, A.; Kallfass, I.; Weissbrodt, E.; Ambacher, O.; Massler, H.;

Si/Ni-Silicide Schottky junctions with atomically flat interfaces using NiSi2 source

2011 / IEEE / 978-1-4577-0708-7
By: Ozawa, K.; Sugii, N.; Shigemori, N.; Koyama, M.; Iwai, H.; Yamada, K.; Tachi, K.; Nishiyama, A.; Tsutsui, K.; Ohmori, K.; Nakatsuka, O.; Kakushima, K.;

Schottky diode as high-speed variable impedance load in six-port modulators

2011 / IEEE / 978-1-4577-1764-2
By: Shaofang Gong; Serban, A.; Karlsson, M.; Owais, O.; Osth, J.;

A study on poly-Si thin-film transistor (TFT) SONOS memory cells with source/drain engineering

2011 / IEEE / 978-1-4577-0708-7
By: Bing-Yue Tsui; Jui-Yao Lai;

HBM ESD robustness of GaN-on-Si Schottky diodes

2011 / IEEE / 978-1-58537-193-8
By: Thijs, S.; Scholz, M.; Linten, D.; Srivastava, P.; Griffoni, A.; Chen, S.-H.; Groeseneken, G.; Decoutere, S.; Van Hove, M.; Pogany, D.; Bychikhin, S.; Hopper, P.; Vashchenko, V.A.; Concannon, A.; Lafonteese, D.; Gallerano, A.; Marcon, D.;

Fully integrated power-efficient AC-to-DC converter design in inductively-powered biomedical applications

2011 / IEEE / 978-1-4577-0223-5
By: Ghovanloo, M.; Hyung-Min Lee;

A fully integrated high security NFC target IC using 0.18 �m CMOS process

2011 / IEEE / 978-1-4577-0704-9
By: Huynh, Q.-H.; Hong, S.H.; Vo, D.H.T.; Lee, J.-W.;

Simulating the EMI characteristics of step-down DC/DC converters

2011 / IEEE / 978-1-61284-247-9
By: Karvonen, A.; Astrom, J.;

Advances of terahertz research and terahertz satellite communications

2011 / IEEE / 978-1-4577-0321-8
By: Zhong-bo Zhu; Shi-Wei Dong; Ying Wang;

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