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Topic: Schottky Barriers

Results

Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness Approach
2011 / IEEE
By: Po-Shun Chiu; Huey-Ing Chen; Chi-Shiang Hsu; Chien-Chang Huang; Po-Cheng Chou; Tai-You Chen; Wen-Chau Liu; Rong-Chau Liu;
Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation
2011 / IEEE
By: Sasaki, T.; Akutsu, H.; Hokazono, A.; Sonehara, T.; Uchida, H.; Toyoshima, Y.; Inaba, S.; Kawanaka, S.; Tomita, M.;
Understanding the Charge Transport Mechanism in VRS and BRS States of Transition Metal Oxide Nanoelectronic Memristor Devices
2011 / IEEE
By: Ordosgoitti, J.; Long, B.; Melkonian, C.; Jha, R.;
Impact of a Germanium and Carbon Preamorphization Implant on the Electrical Characteristics of NiSi/Si Contacts With a Presilicide Sulfur Implant
2011 / IEEE
By: Qian Zhou; Yi Tong; Yee-Chia Yeo; Henry, T.; Thanigaivelan, T.; Chua, L.H.;
Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages
2011 / IEEE
By: Chenhsin Lien; Wen-Fa Wu; Jr-Jie Tsai; Ruei-Kai Shia; Nguyen Dang Chien; Chun-Hsing Shih; Ji-Ting Liang; Yan-Xiang Luo; Wei Chang; Ming-Kun Huang;
Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers
2011 / IEEE
By: Baliga, B.J.; Ozbek, A.M.;
Atomic Interfacial Structures in Fe/GaAs Films
2011 / IEEE
By: Ohno, Y.; Kobayashi, H.; Fleet, L.R.; Hirohata, A.;
Role of Interfacial Resonant States on Spin Injection in FM/GaAs Contacts
2011 / IEEE
By: Inoue, J.; Honda, S.; Itoh, H.;
Carrier Transport Mechanism of Ni/Ag/Pt Contacts to p-Type GaN
2012 / IEEE
By: Hyunsoo Kim; Kwang-Soon Ahn; Youngjun Park;
Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness
2012 / IEEE
By: Hongkai Lai; Cheng Li; Wei Huang; Zheng Wu; Songyan Chen;
Reading Operation and Cell Scalability of Nonvolatile Schottky barrier Multibit Charge-Trapping Memory Cells
2012 / IEEE
By: Ji-Ting Liang; Chun-Hsing Shih; Yan-Xiang Luo;
Simulation of space charge dynamics in low-density polyethylene under external electric field and injection barrier heights using discontinuous galerkin method
2011 / IEEE
By: Yunshan Wang; Yuanxiang Zhou; Jihuan Tian;
2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors
2012 / IEEE
By: Huby, N.; Scarpa, G.; Tallarida, G.; Lugli, P.; Guziewicz, E.; Arcari, M.; Godlewski, M.; Krajewski, T.A.;
X-Band Planar Rectenna
2011 / IEEE
By: Monti, G.; Spartano, M.; Tarricone, L.;
Low-Frequency Noise in Schottky-Barrier-Based Nanoscale Field-Effect Transistors
2012 / IEEE
By: Dubois, E.; Larrieu, G.; Clement, N.;
High-Performance Junction Barrier Schottky Rectifier With Optimized Structure
2012 / IEEE
By: Fei Cao; Yu-xian Chen; Ting Li; Ying Wang; Lei Shao; Yun-tao Liu;
An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps
2012 / IEEE
By: Yan-Hao Huang; Kung-Yen Lee;
Microscopic Identification of Hot Spots in Multibarrier Schottky Contacts on Pulsed Laser Deposition Grown Zinc Oxide Thin Films
2012 / IEEE
By: Muller, S.; Grundmann, M.; Lenzner, J.; Breitenstein, O.; von Wenckstern, H.;
Multilevel Schottky Barrier Nanowire SONOS Memory With Ambipolar n- and p-Channel Cells
2012 / IEEE
By: Wen-Fa Wu; Wei Chang; Chun-Hsing Shih; Chenhsin Lien;
Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique
2012 / IEEE
By: Zhiqiang Li; Ru Huang; Xing Zhang; Ming Li; Xia An; Quanxin Yun; Min Li; Meng Lin;
Structure-Dependent Contact Barrier Effects in Bottom-Contact Organic Thin-Film Transistors
2012 / IEEE
By: Xiaojun Guo; Xiaoli Xu; Linrun Feng;
The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in Germanium
2012 / IEEE
By: Lin, J.; Roy, A.M.; Saraswat, K.C.;
Investigation of the Epitaxial Graphene/p-SiC Heterojunction
2012 / IEEE
By: Imhoff, E.A.; Koehler, A.D.; Jernigan, G.G.; Bezares, F.J.; Tadjer, M.J.; Caldwell, J.D.; Myers-Ward, R.L.; Wheeler, V.D.; Nyakiti, L.O.; Hobart, K.D.; Anderson, T.J.; Kub, F.J.; Eddy, C.R.; Gaskill, D.K.;
Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETs
2012 / IEEE
By: Hyuncher Chong; Johnson, C.S.; Kaushik, V.; Rodgers, M.; Akarvardar, K.; Injo Ok; Kirsch, P.; Jammy, R.; Hobbs, C.; Gausepohl, S.; Kah-Wee Ang;
Low-Frequency Noise Characteristics of GaN Schottky Barrier Photodetectors Prepared With Nickel Annealing
2012 / IEEE
By: Shih-Ming Wang; Sheng-Joue Young; Bohr-Ran Huang; Shoou-Jinn Chang; Chih-Hung Hsiao; Tse-Pu Chen; Chun-Bo Yang; San-Lein Wu;
Photocurrent Enhancement of Copper (II) Phthalocyanine on Nanogap Thin Film Electrodes
2012 / IEEE
By: Hinds, B.J.; Bing Hu;
HBM ESD Robustness of GaN-on-Si Schottky Diodes
2012 / IEEE
By: Scholz, M.; Denis, M.; Linten, D.; Srivastava, P.; Griffoni, A.; Shih-Hung Chen; Groeseneken, G.; Decoutere, S.; Van Hove, M.; Pogany, D.; Bychikhin, S.; Thijs, S.; Hopper, P.; Vashchenko, V.A.; Concannon, A.; Lafonteese, D.; Gallerano, A.;
Conduction Mechanism of Se Schottky Contact to n-Type Ge
2012 / IEEE
By: Yang-Kyu Park; Janardhanam, V.; Chel-Jong Choi; Kwang-Soon Ahn; Hyung-Joong Yun;
Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires
2012 / IEEE
By: Afzalian, A.; Flandre, D.;
Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs
2012 / IEEE
By: Hellings, G.; Scholz, M.; Linten, D.; Yueh-Chin Lin; Shih-Hung Chen; Groeseneken, G.; Chang, E.Y.;
Influence of Channel and Underlap Engineering on the High-Frequency and Switching Performance of CNTFETs
2012 / IEEE
By: Sheikhi, M.H.; Kordrostami, Z.; Zarifkar, A.;
Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN
2012 / IEEE
By: Zhang, R.; Ren, F.; Chen, D.; Lu, H.; Xie, F.; Zheng, Y.;
Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density
2012 / IEEE
By: Min-Cheng Chen; Fu-Liang Yang; Chenming Hu; Tahui Wang; Chia-Hua Ho; Guo-Wei Huang; Chang-Hsien Lin; Bo-Yuan Chen; Chia-Yi Lin;
Enhanced Electrical Characteristics of AlGaN-Based SBD With In Situ Deposited Silicon Carbon Nitride Cap Layer
2012 / IEEE
By: Jae-Hyun Jeong; Jae-Hoon Lee; Jung-Hee Lee;
840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate
2012 / IEEE
By: Jae-Hoon Lee; Jung-Hee Lee; Hee-Sung Kang; Jong-Kyu Yoo;
Electrical Properties of Silicon Nanowire Fabricated by Patterning and Oxidation Process
2012 / IEEE
By: Hyo-Sung Lee; Hyun-Mi Kim; Min-Hyun Lee; Ki-Bum Kim; Wanjun Park; Sung-Wook Nam;
Substrate fed logic - An improved form of injection logic
1974 / IEEE
By: Walsh, P.S.; Kennedy, L.W.; Blatt, V.; Ashford, R.C.A.;
Femto-joule logic circuit with enhancement type Schottky barrier FET
1974 / IEEE
By: Okabayashi, H.; Yamada, K.; Muta, H.; Nagahashi, Y.; Tanaka, T.; Suzuki, S.;
Exact control of junction position and Schottky barrier height in dopant-segregated epitaxial NiSi2 for high performance metal source/drain MOSFETs
2011 / IEEE / 978-1-4244-9949-6
By: Migita, S.; Mizubayashi, W.; Ota, H.; Morita, Y.;
Performance comparison of armchair-edged and nitrogen-doped zigzag-edged graphene nanoribbon schottky barrier field-effect transistors
2011 / IEEE / 978-1-4577-0378-2
By: Yan-Zheng Peck; Kai-Tak Lam; Gengchiau Liang; Zhi-Hean Lim;
A study on Schottky Barrier NOR Flash memory
2011 / IEEE / 978-1-4577-0378-2
By: Zhou Fang; Zermin Lin;
Effect of light illumination on the low-frequency noises in amorphous-IGZO TFTs
2011 / IEEE / 978-1-4577-0158-0
By: Hwang, C.S.; Cheong, W.S.; Park, J.M.; Cho, I.T.; Kwon, H.I.; Shin, H.; Lee, J.H.; Park, B.G.; Cho, I.H.;
Low frequency noise and ions diffusion in the CdTe bulk single crystals
2011 / IEEE / 978-1-4577-0192-4
By: Grmela, L.; Sik, O.; Sikula, J.; Elhadidy, H.; Moravec, P.; Franc, J.; Zajacek, J.;
High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering
2011 / IEEE / 978-1-4244-9949-6
By: Nakane, R.; Urabe, Y.; Lee, S.; Iida, R.; Taoka, N.; Yokoyama, M.; Kim, S.H.; Takagi, S.; Takenaka, M.; Hata, M.; Fukuhara, N.; Yamada, H.; Yasuda, T.; Miyata, N.;
Low-frequency noise in FinFETs with PtSi Schottky-barrier source/drain contacts
2011 / IEEE / 978-1-4577-0192-4
By: Malm, B.G.; Ostling, M.; Olyaei, M.;
Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET
2011 / IEEE / 978-1-4577-0192-4
By: Pascual, E.; Martin, M.J.; Rengel, R.;
2D analytical framework for compact modeling of the electrostatics in undoped DG MOSFETs
2011 / IEEE / 978-83-932075-2-7
By: Schwarz, M.; Iniguez, B.; Kloes, A.; Holtij, T.;
Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study
2011 / IEEE / 978-1-61284-418-3
By: Kobinata, K.; Nakayama, T.;
Planar heterostructures based on organic semiconductor
2011 / IEEE / 978-1-4577-2112-0
By: Reboun, J.; Hamacek, A.; Pretl, S.; Hromadka, K.; Dzugan, T.;
Influence of sintering temperature on energy conversion efficiency in dye-sensitized solar cell
2011 / IEEE / 978-1-4244-8165-1
By: Wen-Liang Gao; Gu-Ling Zhang; Yi-Quan Wang; Wen-Zhong Wang; Ke Wang; Di Yang; Kai-Xiang Shen;
CMOS without doping: Midgap Schottky-barrier nanowire field-effect-transistors for high-temperature applications
2011 / IEEE / 978-1-4577-0708-7
By: Schwalke, U.; Krauss, T.; Wessely, F.;
HBM ESD robustness of GaN-on-Si Schottky diodes
2011 / IEEE / 978-1-58537-193-8
By: Thijs, S.; Scholz, M.; Linten, D.; Srivastava, P.; Griffoni, A.; Chen, S.-H.; Groeseneken, G.; Decoutere, S.; Van Hove, M.; Pogany, D.; Bychikhin, S.; Hopper, P.; Vashchenko, V.A.; Concannon, A.; Lafonteese, D.; Gallerano, A.; Marcon, D.;
Locally-oxidized silicon surface-plasmon Schottky detector for telecom wavelengths
2011 / IEEE / 978-1-4244-8340-2
By: Khurgin, J.; Desiatov, B.; Goykhman, I.; Levy, U.; Shappir, J.;
Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation
2011 / IEEE / 978-1-61284-712-2
By: Douglas, E.A.; Via, D.; Heller, E.; Poling, B.; Ren, F.; Pearton, S.J.;
Schottky barrier light emitting diode in standard CMOS technology
2011 / IEEE / 978-1-4244-8340-2
By: Weilian Guo; Zanyun Zhang; Zan Dong; Wei Wang; Beiju Huang; Hongda Chen;
Influence of the nonlinear bias dependence of the barrier height on measured Schottky-barrier contact parameters
2011 / IEEE / 978-966-335-357-9
By: Shmargunov, A.V.; Bozhkov, V.G.;
Characterization of a high temperature multichip SiC JFET-based module
2011 / IEEE / 978-1-4577-0541-0
By: Wang, F.; Jing Wang; Dong Jiang; Fan Xu; Kim, S.J.; Han, T.J.; Tolbert, L.M.;
The influence of the ambient and junction temperature on the MPS critical parameters
2011 / IEEE / 978-2-35500-016-4
By: Janke, W.; Hapka, A.;
Cherenkov phase-matched tunable THz-wave radiation from a lithium niobate crystal excited by a dual wavelength cr:Forsterite Laser
2011 / IEEE / 978-1-4577-0509-0
By: Murakami, H.; Kawayama, I.; Kawabe, S.; Kaneko, R.; Tonouchi, M.;
AlGaN-based solar-blind metal-semiconductor-metal photodetectors
2011 / IEEE / 978-1-4577-1997-4
By: Liu Bo; Xie Sheng; Zhang Shilin; Shao Huimin; Mao Luhong; Feng Zhihong; Yin Shunzheng; Li Xianjie; Guo WeiLian;
Engineering buried oxide in dopant-segregated Schottky barrier SOI MOSFET for low-variability nanoscale CMOS circuits
2011 / IEEE / 978-1-4577-1997-4
By: Patil, G.C.; Qureshi, S.;
Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application
2011 / IEEE / 978-1-4577-1997-4
By: Young-Jin Kwon; Sung-Ho Hahm; Heon-Bok Lee; Do-Kywn Kim; Chang-Ju Lee;
Si3N4: HfO2 dual-k spacer dopant-segregated Schottky barrier SOI MOSFET for low-power applications
2011 / IEEE / 978-1-4577-1997-4
By: Patil, G.C.; Qureshi, S.;
UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes
2011 / IEEE / 978-1-4577-1997-4
By: Jun-Yeon Yun; Dong-Seok Kim; Gyo-Hun Koo; Chang-Ju Lee; Sung-Ho Hahm; Jung-Hee Lee;
Fabrication of silicon tunnel-FETs using epitaxial NiSi2 Schottky junctions and dopant segregation technique
2011 / IEEE / 978-1-4577-1756-7
By: Ota, H.; Migita, S.;
Advanced contact and junction technologies for improved parasitic resistance and short channel immunity in FinFETs beyond 22nm node
2011 / IEEE / 978-1-4577-1756-7
By: Ang, K.-W.; Jammy, R.; Kirsch, P.D.; Hobbs, C.; Gausepohl, S.; Gunji, M.; Franca, D.L.; Rodgers, M.; Ok, I.; Hung, P.Y.; Min, B.-G.;
Low-frequency noise in high-k LaLuO3/TiN MOSFETs
2011 / IEEE / 978-1-4577-1756-7
By: Olyaei, M.; Malm, B.G.; Litta, E.D.; Hellstrom, P.-E.; Ostling, M.;
2D analytical DC model for nanoscale Schottky barrier DG-MOSFETs
2011 / IEEE / 978-1-4577-1756-7
By: Holtij, T.; Schwarz, M.; Iniguez, B.; Kloes, A.;
An analyzing of anomalous peak in the capacitance-voltage characteristics at Hg/GaN Schottky contact
2011 / IEEE / 978-1-4577-0796-4
By: Cheng, L.H.; Zheng, Y.D.; Zhang, R.; Xiu, X.Q.; Hua, X.M.; Zhao, H.; Xie, Z.L.; Lu, H.; Cheng, W.; Yu, L.; Han, P.;
Influence of trench structures induced by texturization on the breakdown voltage of multicrystalline silicon solar cells
2011 / IEEE / 978-1-4244-9965-6
By: Kwapil, W.; Nievendick, J.; Rentsch, J.;
Effect of the dopant segregation layer on the static characteristics of Schottky-barrier n-MOSFETs
2012 / IEEE / 978-1-4577-1117-6
By: Rengel, R.; Martin, M.J.; Galeote, J.M.; Pascual, E.; Couso, C.;
Origin of high on-state current for dopant-segregated schottky MOSFET
2011 / IEEE / 978-1-61284-193-9
By: Liu-Lin Zhong; Yang Tang; Yu-Long Jiang;
On chip plasmonic enhanced silicon Schottky detector for telecom wavelengths
2012 / IEEE / 978-1-55752-935-1
By: Goykhman, I.; Levy, U.; Shappir, J.; Khurgin, J.; Desiatov, B.;
High-field domains in a thin cover-layer of CdS improve significantly the efficiency of CdS/CdTe solar cells
2011 / IEEE / 978-1-4244-9965-6
By: Boer, K.W.;
The effect of saw mark on the over-ghosting for acidic textured multicrystalline wafers with silicon nitride anti-reflectance films
2011 / IEEE / 978-1-4244-9965-6
By: Youzhong Li; Ye Duan; Zhihua Gao; Yang Song; Hongwei Diao; Tao Li; Yehua Tang; Hailing Li; Lei Zhao; Wenjing Wang; Chunlan Zhou;
Nanowire and planar UTB SOI Schottky Barrier MOSFETs with dopant segregation
2012 / IEEE / 978-1-4673-0192-3
By: Schafer, A.; Knoll, L.; Mantl, S.; Zhao, Q.T.; Bourdelle, K.K.; Trellenkamp, S.;
Characteristics of interface states in irradiated Pd/n-SiGe as derived from frequency- and temperature-dependent admittance
2012 / IEEE / 978-1-4673-0784-0
By: Mamor, M.; Sellai, A.;
Systematical investigation and physical mechanism of HfO2 gate stacks band alignment, VFB shift and Fermi level pinning
2012 / IEEE / 978-1-4577-2084-0
By: Wang, X.L.; Ye, T.C.; Chen, D.P.; Yang, H.; Han, K.; Ma, X.L.; Xiang, J.J.; Zhang, J.; Wang, W.W.;
Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contacts
2012 / IEEE / 978-1-4577-2084-0
By: Qian Zhou; Lim, P.S.Y.; Bin Liu; Yi Tong; Yee-Chia Yeo;
T-shaped anode GaN Schottky barrier diode for microwave power rectification
2012 / IEEE / 978-1-4673-1780-1
By: Harauchi, K.; Hayashino, K.; Takeuchi, T.; Fukui, K.; Ohno, Y.; Jin-Ping Ao; Iwasaki, Y.;
Design and analysis OF Schottky Tunneling Transistor
2012 / IEEE / 978-81-909042-2-3
By: Moni, D.J.; Ajayan, J.;
Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode
2012 / IEEE / 978-1-4673-1780-1
By: Iwasaki, Y.; Harauchi, K.; Hayashino, K.; Ohno, Y.; Jin-Ping Ao; Fukui, K.;
Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack
2012 / IEEE / 978-1-4673-1257-8
By: Dapeng Chen; Chao Zhao; Jinjuan Xiang; Xueli Ma; Jing Zhang; Tianchun Ye; Kai Han; Wenwu Wang; Xiaolei Wang; Hong Yang;
Planar and nanowire Schottky barrier MOSFETs on SOI with NiSi and epitaxial NiSi2 contacts
2012 / IEEE / 978-1-4673-1257-8
By: Zhao, Q.T.; Mantl, S.; Bourdelle, K.K.; Trellenkamp, S.; Schafer, A.; Knoll, L.;
Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation
2012 / IEEE / 978-1-4673-1257-8
By: Song, S.C.; Jain, A.; Riley, D.; Chapman, R.; Vogel, E.; Lim, K.Y.; Mendez, J.; Chan, J.; Hinkle, C.; Shaw, J.; Blatchford, J.;
Schottky barrier height modulation of NiGe/Ge junction by P and chalcogen (S, Se, or Te) co-introduction for metal source/drain Ge nMOSFETs
2012 / IEEE / 978-1-4673-1257-8
By: Tezuka, T.; Kamimuta, Y.; Koike, M.;
A novel MOSFET structure with asymmetric Schottky and P-N junction source/drain on bulk silicon substrate
2012 / IEEE / 978-1-4673-1257-8
By: Zhang, D.W.; Zhiwei Zhu; Mei-Gui Chen; Cheng Hu; Peng Xu; Dongping Wu;
Modification of Schottky interface by the inclusion of DNA interlayer to create metal / organic / inorganic structures
2012 / IEEE / 978-1-4673-0238-8
By: Lodzinski, M.; Wills, J.; Batcup, S.; Igic, P.; Holland, P.; Doak, S.; Wright, C.;
A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage
2012 / IEEE / 978-1-4577-1597-6
By: Chang, W.; Udrea, F.; Hsu, W.C.-W.; Chen, M.;
Carrier-storage effect and extraction-enhanced lateral IGBT (E2LIGBT): A super-high speed and low on-state voltage LIGBT superior to LDMOSFET
2012 / IEEE / 978-1-4577-1597-6
By: Akio, A.; Takahashi, S.; Norihito, N.; Satoshi, S.; Youichi, Y.;
Electric field analysis for the design of LT-GaAs photoconductive terahertz antennas
2012 / IEEE / 978-1-4673-2185-3
By: Yingxin Wang; Linghui Wang; Wei Cheng; Ziran Zhao;
Two-dimensional physics-based modeling of dopant-segregated Schottky barrier UTB MOSFETs
2012 / IEEE / 978-83-932075-8-9
By: Holtij, T.; Schwarz, M.; Iniguez, B.; Kloes, A.;
Design of up/down converters with subharmonic pump for wireless communication at 220 GHz
2012 / IEEE / 978-1-4673-2185-3
By: Bo Zhang; Zhe Chen; Xiaofan Yang; Yong Fan;
Design of a 225 GHz frequency tripler using planar Schottky diode
2012 / IEEE / 978-1-4673-2185-3
By: Qiuquan Lu; Yonglun Wu; Peihan Zhou; Wei Liu; Yong Zhang;
Two-terminal electroluminescence of AlGaN/GaN high electron mobility transistors
2012 / IEEE / 978-1-4673-2185-3
By: Fangshi Xue; Jianjun Zhou; Xun Dong; Chunjiang Ren; Yuechan Kong; Liang Li; Tangsheng Chen;
Dopant-free CMOS: A new device concept
2012 / IEEE / 978-1-4673-1928-7
By: Schwalke, U.; Krauss, T.; Wessely, F.;
High Breakdown Voltage Schottky Gating of Doped Si/SiGe 2DEG Systems Enabled by Suppression of Phosphorus Surface Segregation
2012 / IEEE / 978-1-4577-1865-6
By: Sturm, J.C.; Jiun-Yun Li; Chiao-Ti Huang;
A W-band low conversion loss single balanced mixer with planar GaAs Schottky diodes
2012 / IEEE / 978-1-4673-2185-3
By: Dezhi Ding; Zhenhua Chen; Jinping Xu;
Low-Contact-Resistivity Nickel Germanide Contacts on n+Ge with Phosphorus/Antimony Co-Doping and Schottky Barrier Height Lowering
2012 / IEEE / 978-1-4577-1865-6
By: Maszara, W.P.; Shurong Liang; Gupta, S.; Roy, A.; Nishi, Y.; Lin, J.-Y.J.; Bin Yang; Saraswat, K.;
Metal contacts to MoS2: A two-dimensional semiconductor
2012 / IEEE / 978-1-4673-1164-9
By: Gu, J.J.; Liu, H.; Neal, A.T.; Ye, P.D.;

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