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Topic: Raman Spectra Of Inorganic Solids

Results

The Raman microprobe: A quantitative analytical tool to characterize laser-processed semiconductors

1986 / IEEE
By: Fauchet, P.M.;

Laser-based structure studies of silicon and gallium arsenide

1986 / IEEE
By: Streetman, B.G.; Crook, G.E.;

Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and its heterostructures

1988 / IEEE
By: Shealy, J.R.; Bour, D.P.;

Characterization of semiconductor materials by Raman microprobe

1989 / IEEE
By: Hangyo, M.; Nakashima, S.;

Raman microprobe analysis of temperature profiles in CW laser heated silicon microstructures

1989 / IEEE
By: Herman, I.P.; Tang, H.; Pazionis, G.D.;

Raman microprobe analysis of strain induced by patterned dielectric films of GaAlAs structures

1989 / IEEE
By: Jackson, H.E.; Roughani, B.; Radens, C.J.; Burnham, R.D.; Boyd, J.T.;

Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy

1989 / IEEE
By: Wagner, J.; Ramsteiner, M.;

Raman scattering characterization of titanium silicide formation

1989 / IEEE
By: Nemanich, R.J.; Jeon, H.; Fiordalice, R.W.;

Raman scattering studies of reactive ion-etched MBE

1989 / IEEE
By: Evans, K.R.; Stutz, C.E.; Hickman, G.; Mantei, T.D.; Jones, R.L.; Jackson, H.E.; Roughani, B.; Jbara, J.J.;

Raman spectroscopy and the characterization of buried semiconductor layers

1989 / IEEE
By: Tsang, J.C.; Iyer, S.S.;

Silicon matrix disorder in amorphous hydrogenated silicon alloys

1989 / IEEE
By: Lotter, E.; Mohring, H.-D.; Schubert, M.B.; Bauer, G.H.;

Bulk and surface properties of amorphous hydrogenated fluorinated silicon grown from SiF/sub 4/ and H/sub 2/

1989 / IEEE
By: Liu, J.Z.; Chu, V.; Shen, D.S.; Maruyama, A.; Wagner, S.; Fauchet, P.M.; Campbell, I.;

An optical investigation of electronic excitations in the high temperature superconductors YBa/sub 2/Cu/sub 3/O/sub 7- delta / and Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub 8+ Delta /

1989 / IEEE
By: Cooper, S.L.; Klein, M.V.; Slakey, F.; Ginsberg, D.M.; Rice, J.P.; Bukowski, E.D.;

Monitoring of low-dose ion implantation in silicon

1990 / IEEE
By: Welles, C.; Smith, W.L.; Nakashima, S.; Mizoguchi, K.; Hahn, S.K.; Ichikawa, R.; Hagiwara, H.; Hara, T.; Larson, L.;

Characterization of /sup 28/Si/sup +/ implantation induced damage in SIMOX

1989 / IEEE
By: Adams, P.M.; Knudsen, J.F.; Moss, S.C.; Smith, D.D.; Bowman, R.C., Jr.;

Carbon overcoat and the process dependence on its microstructure and wear characteristics

1988 / IEEE
By: Siekhaus, W.; Salmeron, M.; Ogletree, D.F.; Marchon, B.; Veirs, K.; Khan, M.R.; Smallen, M.; Smith, S.; Fisher, R.D.; Heiman, N.; Hughes, G.F.;

Recent results on ion-beam hydrogenation of amorphous silicon

1988 / IEEE
By: Xu, Y.; Tsuo, Y.S.; Barua, A.K.; Deb, S.K.; Mascarenhas, A.;

Vacuum arc deposition of carbon thin films in a low pressure of hydrogen

1991 / IEEE
By: Meunier, J.-L.; Douyon de Azevedo, M.;

Raman scattering study of CuInSe/sub 2/ films prepared by three-source RF-sputtering and by selenization of Cu/In/Se stacked layers

1990 / IEEE
By: Tanda, M.; Yamanaka, S.; Takahashi, K.; Konagai, M.; Yamada, A.; Ito, K.; Horino, K.;

Studies of substrate induced disorder in amorphous silicon by in-situ-Raman backscattering during film growth

1990 / IEEE
By: Schubert, M.B.; Bauer, G.H.;

Characterization of InP and related materials by light scattering and photoluminescence

1991 / IEEE / 0-87942-626-8
By: Epler, J.E.; Auderset, H.; Steigmeier, E.F.;

High precision characterization in In/sub x/Ga/sub 1-x/As on InP

1991 / IEEE / 0-87942-626-8
By: Kao, Y.C.; Duncan, W.M.; Estrera, J.P.; Liu, H.Y.;

Spectral photoluminescence and Raman investigations of surface treatments on InP

1991 / IEEE / 0-87942-626-8
By: Lile, D.L.; Iyer, R.; Bollig, B.;

Preparation and characterization of polysulfide treated InP MIS structures

1991 / IEEE / 0-87942-626-8
By: Lile, D.L.; Bollig, B.; Iyer, R.;

Stress analysis of trench isolation structure in advanced bipolar LSIs

1991 / IEEE / 0-7803-0103-X
By: Katakabe, I.; Katsumata, Y.; Iwai, H.; Yoshino, C.; Tsukioka, E.; Itoh, N.;

Optical characterization of sputtered carbon films (magnetic media overlayers)

1993 / IEEE
By: Ager, J.W., III;

Structure and tribological performance of carbon overlayer films (for magnetic media)

1993 / IEEE
By: Li, E.; Agarwal, S.; Heiman, N.;

A method to determine the crystallographic perfection of superconducting epitaxial films

1993 / IEEE
By: Obraztsov, A.N.; Kovalev, A.S.;

Analysis of SiO/sub 2//InP interfaces using gated photoluminescence and Raman spectroscopy

1992 / IEEE / 0-7803-0522-1
By: Bollig, B.; Iyer, R.; Ochiai, M.; Lile, D.;

Raman assessment of InP wafers

1992 / IEEE / 0-7803-0522-1
By: Martin, P.; Torres, A.; Martin, E.; Jimenez, J.;

Passivating SiS/sub 2/ films on InP

1992 / IEEE / 0-7803-0522-1
By: Ochiai, M.; Iyer, R.; Lile, D.L.; Chen, C.W.;

Cryogenic processing of metal/InP/Schottky contacts

1992 / IEEE / 0-7803-0522-1
By: Wallace, R.L.; Shi, Z.Q.; Anderson, W.A.;

Characterization techniques for InP

1992 / IEEE / 0-7803-0522-1
By: Benz, K.; Eiche, C.; Bischopink, G.;

Structure and mechanical properties of hydrogenated carbon films prepared by magnetron sputtering (for magnetic discs)

1991 / IEEE
By: Vo, P.N.; Marchon, B.; Ager, J.W., III; Khan, M.R.;

Nondegenerate optical Kerr effect in semiconductors

1994 / IEEE
By: Van Stryland, E.W.; Wang, J.; Sheik-Bahae, M.;

The influence of La content in PLZT-x/95/5 ceramics (x=0.5 to 4%) on the dielectric, pyroelectric, thermally stimulated current and Raman scattering measurements and model interpretation

1992 / IEEE / 0-7803-0465-9
By: Dmytrow, D.; Ujma, Z.; Handerek, J.; El-Harrad, I.; Carabatos-Nedelec, C.;

Study of asymmetric broadening of Raman scattering in In/sub x/Ga/sub 1-x/As/InP and In/sub x/Ga/sub 1-x/As/GaAs epilayers

1994 / IEEE / 0-7803-1476-X
By: Chang, S.Z.; Shen, J.L.; Chen, Y.F.; Lee, S.C.;

Amorphous and micro-crystalline silicon for photovoltaic application

1993 / IEEE / 0-7803-1220-1
By: Palmer, J.; Wallace, R.; Yi, J.; Anderson, W.A.;

Raman, photoluminescence, and SEM studies of CdS and CdTe films grown by RF sputtering and laser physical vapor deposition

1993 / IEEE / 0-7803-1220-1
By: Bohn, R.G.; Compaan, A.D.; Fischer, A.; Zhirong Feng; Tabory, C.N.; Meilun Shao; Yuxin Li;

One-decade reduction of pn-junction leakage current using poly-Si interlayered SOI structures

1993 / IEEE / 0-7803-1450-6
By: Horiuchi, M.; Ohoyu, K.;

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