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Topic: Quantum Well Devices

Results

Power Enhancement of 410-nm InGaN-Based Light-Emitting Diodes on Selectively Etched GaN/Sapphire Templates
2011 / IEEE
By: Shih-Cheng Huang; Jen-Hung Tu; Ming-Tsung Hung; Dong-Sing Wuu; Horng, R.-H.; Tsung-Yen Tsai; Li-Wei Tu; Wei-Yang Chiang;
Gain Recovery Acceleration by Enhancing Differential Gain in Quantum Well Semiconductor Optical Amplifiers
2011 / IEEE
By: Xi Huang; Cui Qin; Xinliang Zhang;
Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer
2011 / IEEE
By: Hsueh-Hsing Liu; Jen-Inn Chyi; Geng-Yen Lee; Peng-Ren Chen;
Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures
2011 / IEEE
By: Eun-Soo Nam; Cheol-Hoi Kim; Jong-In Shim; Han-Youl Ryu; Jin Hyoung Choi; Jong-Moo Lee; Min-Soo Noh; Hyun Min Jung;
Ge/SiGe Quantum Well p-i-n Structures for Uncooled Infrared Bolometers
2011 / IEEE
By: Okyay, A.K.; Hanoglu, O.; Onbasli, M.C.; Yesilyurt, A.; Atar, F.B.;
Ultrafast All-Optical Gating Operation Using Michelson Interferometer for Hybrid Integration of Intersubband Transition Switch on Si Platform
2011 / IEEE
By: Kintaka, K.; Nagase, M.; Suda, S.; Shoji, Y.; Kawashima, H.; Ishikawa, H.; Hasama, T.; Kuwatsuka, H.; Akimoto, R.;
Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers
2011 / IEEE
By: Yi-Keng Fu; Chun-Yen Chang; Bo-Chun Chen; Yan-Kuin Su; Yu-Hsuan Lu; Kai-Feng Huang;
Strain Engineering of Plasma Dispersion Effect for SiGe Optical Modulators
2012 / IEEE
By: Takagi, S.; Takenaka, M.;
Theory and Design of THz Intracavity Gain-Flattened Filters for Monolithically Integrated Mode-Locked Lasers
2012 / IEEE
By: Coldren, L.A.; Binetti, P.R.A.; Bhardwaj, A.; Norberg, E.J.; Guzzon, R.S.; Parker, J.S.;
Electromagnetic Modeling of Quantum Well Infrared Photodetectors
2012 / IEEE
By: Sun, J.; Waczynski, A.; Forrai, D.P.; Jhabvala, M.D.; Kwong-Kit Choi; Jones, R.;
Abnormal Electrical and Optical Characteristics of InGaN-Based LEDs by Current Stress-Time-Dependent Annihilation
2012 / IEEE
By: Jung-Hee Lee; Jae-Hoon Lee;
Numerical Study on Metal Cavity Couplers for Terahertz Quantum-Well Photodetectors
2012 / IEEE
By: Huichun Liu; Juncheng Cao; Rong Zhang; Xuguang Guo;
Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes
2012 / IEEE
By: Su-Ik Park; Jong-In Shim; Han-Youl Ryu; Dong-Soo Shin; Hyun-Sung Kim; Dong-Hyun Jang; Jong-Ik Lee;
Three-Dimensional Analysis of Temperature Distributions Based on Circuit Modeling of Light-Emitting Diodes
2012 / IEEE
By: Dong-Soo Shin; Jong-In Shim; Dong-Pyo Han; Joosun Yun;
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs
2012 / IEEE
By: Han Zhao; Verzellesi, G.; Morassi, L.; Bersuker, G.; Veksler, D.; Lee, J.C.;
Sub 10 ps Carrier Response Times in Electroabsorption Modulators Using Quantum Well Offsetting
2012 / IEEE
By: Corbett, B.; Cleary, C.S.; Daunt, C.L.M.; Peters, F.H.; Manning, R.J.; Pelucchi, E.; Young, R.J.; Thomas, K.;
Surface Plasmon-Enhanced Absorption in Metal Grating Coupled Terahertz Quantum Well Photodetectors
2012 / IEEE
By: Liu, H.; Cao, J.; Zhang, R.; Guo, X.;
Extraction of Location and Energy Level of the Trap Causing Random Telegraph Noise at Reverse-Biased Region in GaN-Based Light-Emitting Diodes
2012 / IEEE
By: Donghoon Kang; Jungjin Park; Hyungcheol Shin; Joong-Kon Son;
Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon
2012 / IEEE
By: Hyun-Gi Hong; Jaekyun Kim; Joosung Kim; Youngjo Tak; Jun-Youn Kim; Moonseung Yang; U-In Chung; Youngsoo Park; Junghoon Park; Suhee Chae;
Tunable Multichannel Filter in a Photonic Crystal Containing Semiconductor Photonic Quantum Well
2012 / IEEE
By: Tzong-Jer Yang; Chien-Jang Wu; Hui-Chuan Hung; Shoou-Jinn Chang;
Carrier Dynamics in High-Efficiency Blue GaN Light-Emitting Diodes Under Different Bias Currents and Temperatures
2012 / IEEE
By: Tulkki, J.; Oksanen, J.; Kivisaari, P.; Jang, C.H.; Lee, M.L.; Kai-Lun Chi; Jin-Wei Shi; Sheu, J.K.;
Modeling Resonance-Free Modulation Response in Transistor Lasers With Single and Multiple Quantum Wells in the Base
2012 / IEEE
By: Mukhopadhyay, B.; Basu, R.; Basu, P. K.;
Active Photonic Band-Gap Switch Based on GaInNAs Multiquantum Well
2012 / IEEE
By: Calo, G.; Petruzzelli, V.; Alexandropoulos, D.;
DC Characterizations of MQW Tunnel Diode and Laser Diode Hybrid Integration Device
2012 / IEEE
By: Guogang Qin; Lingjuan Zhao; Wei Wang; Guangzhao Ran; Chong Wang; Jifang Qiu; Jiaoqing Pan; Song Liang; Weixi Chen; Tao Hong; Yanping Li; Bin Niu;
Compact Electroabsorption Modulators for Photonic Integrated Circuits, Using an Isolated Pedestal Contact Scheme
2012 / IEEE
By: Corbett, B.; O'Callaghan, J.; Daunt, C.L.M.; Peters, F.H.; Ko-Hsin Lee; Pelucchi, E.; Thomas, K.; Young, R.J.; Hua Yang;
Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation
2012 / IEEE
By: Meoung-Whan Cho; Sung Ryong Cho; Seogwoo Lee; Kayo Koike; Yao, T.; Jinsub Park; Hyun-Yong Lee; Soon-Ku Hong; Jun-Seok Ha; Hyojong Lee;
Enhanced Light Extraction of GaN-Based Green Light-Emitting Diodes With GaOOH Rods
2012 / IEEE
By: Hee Kwan Lee; Jae Su Yu; Myung Sub Kim;
Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides
2012 / IEEE
By: Harris, J.S.; Kamins, T.I.; Schaevitz, R.K.; Claussen, S.A.; Yiwen Rong; Shen Ren; Miller, D.A.B.;
Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate
2012 / IEEE
By: Yu-Hsuan Lu; Yi-Keng Fu; Jenn-Fang Chen; Yan-Kuin Su; Chia-Hsin Chao; Rong Xuan;
Light Output Extraction Enhancement in GaN-Based Green LEDs With Periodic AZO Subwavelength Nanostructure Arrays
2012 / IEEE
By: Jae Su Yu; Hee Kwan Lee; Dong Hyuk Joo;
Performance of InGaN/GaN MQW LEDs Using Ga-Doped ZnO TCLs Prepared by ALD
2012 / IEEE
By: Chien-Hua Chiu; Kuo-Yi Yen; Jyh-Rong Gong; Tai-Yuan Lin; Tzu-Pei Chen; Pei-Shin Lin; Chien-Hua Chou; Chun-Wei Li;
Slightly-Doped Step-Like Electron-Blocking Layer in InGaN Light-Emitting Diodes
2012 / IEEE
By: Tsun-Hsin Wang; Yen-Kuang Kuo; Jen-De Chen; Jih-Yuan Chang;
Demonstration of Photon Coupling in Dual Multiple-Quantum-Well Solar Cells
2012 / IEEE
By: Airey, R.J.; Browne, B.C.; Connolly, J.P.; Barnham, K.W.J.; Roberts, J.S.; Ekins-Daukes, N.J.; Lee, K.H.; Tibbits, T.N.D.; Fuhrer, M.;
Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer
2012 / IEEE
By: Yugang Zhou; Guowei Xiao; Yian Yin; Hailong Wang; Shuti Li; Taiping Lu; Chao Liu; Lejuan Wu;
Enhanced Optical Power of InGaN/GaN Light-Emitting Diode by AlGaN Interlayer and Electron Blocking Layer
2012 / IEEE
By: Sang-Hyun Hong; Chu-Young Cho; Sang-Jun Lee; Seong-Ju Park; Sung-Tae Kim; Sukho Yoon; Sang-Heon Han;
GaN-Based LEDs With a Chirped Multiquantum Barrier Structure
2012 / IEEE
By: Hon, S.J.; Tsun-Kai Ko; Shuguang Li; Zhi-Yong Jiao; Liu, C.H.; Shoou-Jinn Chang; Chuang, R.W.; Yu-Yao Lin;
InGaN-Based Light-Emitting Diodes With an AlGaN Staircase Electron Blocking Layer
2012 / IEEE
By: Chang-Ho Chen; Sheng-Po Chang; Tsung-Hsun Chiang; Shuguang Li; Ray-Ming Lin; Sheng-Fu Yu; Shoou-Jinn Chang;
GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers
2012 / IEEE
By: Chung-Ying Chang; Lin, T.K.; Shuguang Li; Liu, C.H.; Shoou-Jinn Chang;
Enhanced Carrier Escape in MSQW Solar Cell and Its Impact on Photovoltaics Performance
2012 / IEEE
By: Nakano, Y.; Sugiyama, M.; Watanabe, K.; Yunpeng Wang; Yu Wen;
Performance Improvement of One-Transistor DRAM by Band Engineering
2012 / IEEE
By: Gupta, S.; Nainani, A.; Pal, A.; Saraswat, K.C.;
Fabrication and Characterization of High-Quality Factor GaN-Based Resonant-Cavity Blue Light-Emitting Diodes
2012 / IEEE
By: Jiang-Yong Zhang; Guo-En Weng; Wen-Jie Liu; Xiao-Long Hu; Bao-Ping Zhang; Xue-Qin Lv; Lei-Ying Ying; Hui-Jun Huang; Ming Chen; Ming-Ming Liang;
Terahertz Imaging With Quantum-Well Photodetectors
2012 / IEEE
By: Zhang, R.; Zhou, T.; Liu, H.C.; Cao, J.C.; Chen, Z.; Tan, Z.Y.; Guo, X.G.;
Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts
2012 / IEEE
By: Faria, F.; Yuanzheng Yue; Zongyang Hu; Verma, J.; Jia Guo; Ronghua Wang; Yu Cao; Jena, D.; Huili Xing; Guowang Li; Kosel, T.; Kelly, M.;
All-InGaN Phosphorless White Light Emitting Diodes: An Efficiency Estimation
2012 / IEEE
By: Kolper, C.; Witzigmann, B.; Strassburg, M.; Mandl, M.; Sabathil, M.;
Low-cost 25Gb/s 1300nm electroabsorption-modulated InGaAlAs RW-DFB-laser
2011 / IEEE / 978-3-8007-3356-9
By: Sigmund, A.; Bornholdt, C.; Przyrembel, G.; Moehrle, M.; Klein, H.; Molzow, W.-D.;
Two-bandgap semiconductor optical amplifier integrated using quantum well intermixing
2011 / IEEE / 978-3-8007-3356-9
By: Corbett, B.; Peters, F.H.; O'Callaghan, J.; Roycroft, B.; Manning, R.J.; Webb, R.P.; Lee, K.;
Structural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer's curvature measurement and ex-situ X-ray diffraction
2011 / IEEE / 978-3-8007-3356-9
By: Sugiyama, M.; Watanabe, K.; Ma, S.J.; Sodabanlu, H.; Nakano, Y.;
1mA/um-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
2011 / IEEE / 978-1-4244-9949-6
By: Mitard, J.; Witters, L.; Hoffmann, T.; Horiguchi, N.; Absil, P.; Biesemans, S.; De Meyer, K.; Vandervorst, W.; Hong, S.-H.; Wang, W.-E.; Van Dal, M.J.H.; Yamaguchi, S.; Takeoka, S.; Eyben, P.; Vanhaeren, D.; Vanderheyden, A.; Altamirano Sanchez, E.; Dekkers, H.; Favia, P.; Loo, R.; Vincent, B.; Hikavyy, A.; Eneman, G.; Hellings, G.; Krom, R.; Franco, J.;
Analysis and optimization by micro-beam X-ray diffraction of AlGaInAs heterostructures obtained by Selective Area Growth for optoelectronic applications
2011 / IEEE / 978-3-8007-3356-9
By: Mocuta, C.; Lagay, N.; Guillamet, R.; Decobert, J.; Lagree, P.; Carbone, G.;
Low-frequency noise in GaN diodes
2011 / IEEE / 978-1-4577-0192-4
By: Surya, C.; Fong, W.K.; Leung, K.K.;
Analysis of in situ reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: Towards a comprehensive understanding of strain accumulation influence on solar cell properties
2011 / IEEE / 978-3-8007-3356-9
By: Nakano, Y.; Sugryama, M.; Yu Wen; Yunpeng Wang;
Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performance
2011 / IEEE / 978-3-8007-3356-9
By: Nakano, Y.; Sugiyama, M.; Yunpeng Wang; Yu Wen;
AlGaInAs based photonic devices for high-speed data transmission
2011 / IEEE / 978-3-8007-3356-9
By: Okumura, S.; Uetake, A.; Matsuda, M.; Tanaka, S.; Ekawa, M.; Yamamoto, T.; Simoyama, T.; Morito, K.;
Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier
2011 / IEEE / 978-986-02-8974-9
By: Shih-Cheng Huang; Chun-Yen Chang; Po-Min Tu; Ching-Hsueh Chiu; Jet-Rung Chang; Chih-Peng Hsu; Hao-Chung Kuo; Hsiao-Wen Zan;
Heating effect on electroluminescence spectra of InGaN/GaN heterostructures
2011 / IEEE / 978-1-61284-777-1
By: Jiunn-Chyi Lee; Wei-Shiang Tzeng; Jeng-Kuang Huang; Ya-Fen Wu;
A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides
2011 / IEEE / 978-1-4244-8340-2
By: Harris, J.S.; Kamins, T.I.; Schaevitz, R.; Claussen, S.; Yiwen Rong; Shen Ren; Miller, D.A.B.;
UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation
2011 / IEEE / 978-1-4244-8340-2
By: Qiming Wang; Buwen Cheng; Chunlai Xue; Weixuan Hu; Hongwei Zhao;
Hybrid electro-refraction and electro-absorption modulators on silicon
2011 / IEEE / 978-1-4244-8340-2
By: Yongbo Tang; Bowers, J.E.; Hui-Wen Chen;
Quantum-mechanical modeling of NBTI in high-k SiGe MOSFETs
2011 / IEEE / 978-1-61284-418-3
By: Grasser, T.; Kaczer, B.; Franco, J.; Baumgartner, O.; Goes, W.; Hehenberger, P.;
Avalanche multiplication process in InGaAsP/InP quantum well infrared photodetectors
2011 / IEEE / 978-1-4577-0321-8
By: Dao Hua Zhang; Junwen Xue; Lianggang Lu; Binghua Su; Lu Sun;
Computational study of carrier injection in III-nitride core-shell nanowire-LEDs
2011 / IEEE / 978-1-4577-0430-7
By: Romer, F.; Deppner, M.; Strassburg, M.; Bergbauer, W.; Witzigmann, B.; Waag, A.; Neumann, R.; Ledig, J.;
Uncooled, polarization-insensitive AlGalnAs MQW-SOA module operable up to 75�C with constant current
2011 / IEEE / 978-1-55752-932-9
By: Okumura, S.; Uetake, A.; Tanaka, S.; Morito, K.; Nakagawa, G.; Ekawa, M.;
Simple electroabsorption calculator for germanium quantum well devices
2011 / IEEE / 978-1-4244-8340-2
By: Schaevitz, R.K.; Miller, D.A.B.; Harris, J.S.; Roth, J.E.; Tasyurek, E.; Ren, S.; Claussen, S.A.; Yiwen Rong; Audet, R.M.; Ly-Gagnon, D.S.; Edwards, E.H.;
Silicon and germanium quantum well light-emitting diode
2011 / IEEE / 978-1-4244-8340-2
By: Saito, S.;
Medical Body Area Networks: Opportunities, challenges and practices
2011 / IEEE / 978-1-4577-1295-1
By: Dutkiewicz, E.; Gengfa Fang; Yihuai Yang; Vesilo, R.; Huq, M.A.;
InGaN-based blue LED grown on Si(111) substrate
2011 / IEEE / 978-1-61284-846-4
By: Egawa, T.; Hassan, Z.; Shuhaimi, A.;
Quantum well mach-zehnder modulator with single microring resonator and optimized arm length
2011 / IEEE / 978-4-8634-8182-4
By: Yamada, H.; Ueyama, Y.; Kaneshige, H.; Kokubun, Y.; Arakawa, T.;
Theoretical analysis of semiconductor double microring mach-zehnder modulator
2011 / IEEE / 978-4-8634-8182-4
By: Kokubun, Y.; Arakawa, T.; Ueyama, Y.; Yamada, H.;
Thermal emission control by simultaneous manipulation of electronic and photonic states
2011 / IEEE / 978-1-4244-8939-8
By: Asano, T.; De Zoysa, M.; Noda, S.; Inoue, T.; Oskooi, A.;
Demonstration of chip-scale optical interconnects based on the integration of polymer waveguides and multiple quantum well modulators on silicon
2011 / IEEE / 978-1-4244-8939-8
By: Nair, R.; Haney, M.W.; Kiamilev, F.; Goossen, K.W.; Tian Gu;
On-chip guided-wave optical interconnects using multiple quantum well modulators
2011 / IEEE / 978-1-4244-8939-8
By: Haney, M.W.; Nair, R.; Tian Gu;
Influence of substrate on temperature distribution in nitride laser diodes
2011 / IEEE / 978-1-61284-813-6
By: Sukhoivanov, I.; Shulika, O.; Klymenko, M.;
Simulation of InGaN/GaN MQW's laser diodes using micro/nano multi-quantum barriers
2011 / IEEE / 978-1-4577-1169-5
By: Raja, M.Y.A.; Shah, A.; Khizar, M.;
Progress in nonpolar and semipolar GaN materials and devices
2011 / IEEE / 978-1-4577-1756-7
By: Speck, J.S.;
Simulation of mini-band formation in triple si quantum wells based resonant tunneling diode
2011 / IEEE / 978-1-4577-0255-6
By: Nuryadi, R.; Purwiyanti, S.; Hartanto, D.;
A superlattice solar cell with enhanced short circuit current and minimized drop in open circuit voltage
2011 / IEEE / 978-1-4244-9965-6
By: Yunpeng Wang; Nakano, Y.; Sugiyama, M.; Watanabe, K.; Sodabanlu, H.; Yu Wen;
Effects of quantum wells position and background doping on the performance of multiple quantum well solar cells
2011 / IEEE / 978-1-4244-9965-6
By: Sugiyama, M.; Nakano, Y.; Yunpeng Wang; Fujii, H.;
Multiple quantum well top cells for multijunction concentrator solar cells
2011 / IEEE / 978-1-4244-9965-6
By: Lumb, M.; Dobbin, A.L.; Fuhrer, M.; Ekins-Daukes, N.J.; Rees, V.; Airey, R.J.; Adams, J.G.J.; Connolly, J.P.; Browne, B.C.; Barnham, K.W.J.; Kan-Hua Lee; Tibbits, T.N.D.; Roberts, J.S.; Mazzer, M.;
Proposal and design of III-V/Si hybrid lasers with current injection across conductive wafer-bonded heterointerfaces
2011 / IEEE / 978-0-9775657-8-8
By: Tanabe, K.; Arakawa, Y.; Iwamoto, S.;
Gain-assisted propagation of surface plasmon polaritons using electrically-pumped quantum wells as active medium
2011 / IEEE / 978-0-8194-8961-6
By: Zhang, Hui; Li, Yicen; Mei, Ting; Teng, Jinghua; Zhang, Dao Hua; Zhu, Ning;
Enhanced carrier escape in MSQW solar cell and its impact on photovoltaic performance
2011 / IEEE / 978-1-4244-9965-6
By: Yu Wen; Nakano, Y.; Sugiyama, M.; Watanabe, K.; Yunpeng Wang;
Over 30% efficiency triple-junction GainP/GaAs/Ge quantum well solar cells
2011 / IEEE / 978-1-4244-9965-6
By: Chaogang Lou; Rubin Liu; Qiang Sun; Shuai Wang; Wei Gao;
Origins of the short channel effects increase in III-V nMOSFET technologies
2012 / IEEE / 978-1-4673-0192-3
By: Boeuf, F.; Pananakakis, G.; Monfray, S.; Lacord, J.; Ghibaudo, G.; Rafhay, Q.; Dutta, T.; Clerc, R.;
Design of a coupled quantum well modulator with enhanced modulation efficiency
2011 / IEEE / 978-0-9775657-8-8
By: Grant, K.J.; Mudge, K.A.; Clare, B.A.;
Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth
2011 / IEEE / 978-0-8194-8961-6
By: Zhao, Lingjuan; Shao, Yongbo; Wang, Wei; Zhu, Hongliang; Wang, Baojun; Pan, Jiaoqing; Yu, Hongyan;
Junction strategies for 1x nm technology node with FINFET and high mobility channel
2012 / IEEE / 978-1-4673-1257-8
By: Witters, L.; Eneman, G.; Hellings, G.; Togo, M.; Mitard, J.; Douhard, B.; Kambham, A.K.; Sasaki, Y.; Zschaetzsch, G.; Horiguchi, N.; Thean, A.; Vandervorst, W.; Collaert, N.; Noda, T.;
Integrated free-space optical interconnects: All optical communications on- and off-chip
2012 / IEEE / 978-1-4577-1619-5
By: Haney, M.W.; Nair, R.; Tian Gu;
Measurement of room temperature electroluminescence from Ge quantum well waveguides
2012 / IEEE / 978-1-4577-1619-5
By: Isella, G.; Marris-Morini, D.; Chaisakul, P.; Vivien, L.; Coudevylle, J.-R.; Chrastina, D.; Edmond, S.; Le Roux, X.; Izard, N.; Rouifed, M.-S.; Frigerio, J.;
Hybrid chip-scale optical interconnects using multiple quantum well devices bonded to silicon
2012 / IEEE / 978-1-4577-1619-5
By: Tian Gu; Nair, R.; Haney, M.W.;
Ge quantum well electro-absorption modulator with 23 GHz bandwidth
2012 / IEEE / 978-1-4577-1619-5
By: Chaisakul, P.; Vivien, L.; Coudevylle, J.; Edmond, S.; Rouifed, M.; Marris-Morini, D.; Frigerio, J.; Chrastina, D.; Isella, G.; Le Roux, X.;
Thermal metrology techniques for UV LED light sources
2012 / IEEE / 978-1-4244-9532-0
By: Habtemichael, Y.; Natarajan, S.; Graham, S.;
Ge/SiGe Multiple Quantum Well Optoelectronic Devices for Silicon Photonics
2012 / IEEE / 978-1-4577-1865-6
By: Chaisakul, P.; Le Roux, X.; Vivien, L.; Coudevylle, J.; Edmond, S.; Marris-Morini, D.; Frigerio, J.; Chrastina, D.; Isella, G.; Rouifed, M.;
Integration of III-V on Si for High-Mobility CMOS
2012 / IEEE / 978-1-4577-1865-6
By: Horiguchi, N.; Thean, A.; Caymax, M.; Eneman, G.; Hellings, G.; Winderickx, G.; Meuris, M.; Ong, P.; Brammertz, G.; Merckling, C.; Orzali, T.; Ngoc Duy Nguyen; Gang Wang; Waldron, N.;
Direct measurement of Dirac point and Fermi level at graphene/oxide interface by internal photoemission
2012 / IEEE / 978-1-4673-1164-9
By: Nguyen, N.V.; Gundlach, D.; Richter, C.A.; Kang Wang; Kun Xu; Peide Ye; Qin Zhang; Caifu Zeng;
Comparative study of LEDs conformally overgrown on multi-facet GaN NWs vs. conventional c-plane LEDs
2012 / IEEE / 978-1-4673-1164-9
By: Paskova, T.; Van Den Broeck, D.M.; Frajtag, P.; Hosalli, A.M.; Bedair, S.M.; El-Masry, N.A.;
Influence of Quantum Dot Dimensions in a DWELL Photodetector on Absorption Co-efficient
2012 / IEEE / 978-1-4673-1957-7
By: Bhowmick, T.K.; Hossain, G.M.I.; Soumitra, R.J.; Mohammedy, F.M.;
Low-pattern-dependence chirp compensation using integration of EAM and SOA
2012 / IEEE / 978-1-4673-0978-3
By: Ding, Wei-Zun; Wu, Jui-Pin; Chiu, Yi-Jen;
Long-Term Degradation Behavior of 2.3-$\mu\hbox{m}$ Wavelength Highly Strained InAs/InP MQW-DFB Lasers With a p-/n-InP Buried Heterostructure
2012 / IEEE
By: Yoshimura, R.; Mitsuhara, M.; Sato, T.; Takeshita, T.; Ishii, H.;
Characteristics of Polarized Light Emission in $a$-Plane GaN-Based Multiple Quantum Wells
2012 / IEEE
By: Chiao-Yun Chang; Tien-Chang Lu; Chih Ming Lai; Huei-Min Huang;
Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics
2012 / IEEE
By: Fei Xue; Lee, J.; Fei Zhou; Yanzhen Wang; Yen-Ting Chen; Han Zhao; Aiting Jiang;

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