Your Search Results

Use materials about this topic in your textbook!

AcademicPub holds over eight million pieces of educational content - such as case studies and journal articles - for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Topic: Photoluminescence

Results

Laser-based structure studies of silicon and gallium arsenide
1986 / IEEE
By: Streetman, B.G.; Crook, G.E.;
Evaluation of Series Resistance Losses in Screen-Printed Solar Cells With Local Rear Contacts
2011 / IEEE
By: Brendel, R.; Dullweber, T.; Gatz, S.;
Luminescent Ethylene Vinyl Acetate Encapsulation Layers for Enhancing the Short Wavelength Spectral Response and Efficiency of Silicon Photovoltaic Modules
2011 / IEEE
By: Congiu, M.; Klampaftis, E.; Richards, B.S.; Robertson, N.;
Imaging of Metastable Defects in Silicon
2011 / IEEE
By: Habenicht, H.; Schubert, M.C.; Warta, W.;
Structural Dependence of Photoluminescence and Room-Temperature Ferromagnetism in Lightly Cu-Doped ZnO Nanorods
2011 / IEEE
By: Lin, C.C.; Shih, Y.T.; Horng, L.; Kao, M.C.; Chen, H.Z.; Kung, C.Y.; Young, S.L.;
Efficient Operation of a 400 W Diode Side-Pumped Yb:YAG Planar Waveguide Laser
2011 / IEEE
By: Thomson, I.J.; Hall, D.R.; Baker, H.J.; Monjardin, F.J.F.;
Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors With InSb-Like and Mixed Interfaces
2011 / IEEE
By: Jianliang Huang; Yulian Cao; Wenquan Ma; Yanhua Zhang; Jun Shao; Kai Cui; Yang Wei;
Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures
2011 / IEEE
By: Eun-Soo Nam; Cheol-Hoi Kim; Jong-In Shim; Han-Youl Ryu; Jin Hyoung Choi; Jong-Moo Lee; Min-Soo Noh; Hyun Min Jung;
Hollow Waveguides With Low Intrinsic Photoluminescence Fabricated With PECVD Silicon Nitride and Silicon Dioxide Films
2011 / IEEE
By: Jenkins, M.; Keeley, J.; Shuo Liu; Holmes, M.R.; Hawkins, A.R.; Schmidt, H.; Leake, K.;
Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs
2012 / IEEE
By: Butendheich, R.; Humphreys, C.; Dandan Zhu; Trivellin, N.; Vaccari, S.; Leirer, C.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Hahn, B.;
Narrow-Linewidth and Wavelength-Tunable Red-Light Emission From an Si-Quantum-Dot Embedded Oxynitride Distributed Bragg Reflector
2012 / IEEE
By: Yung-Hsiang Lin; Chung-Lun Wu; Gong-Ru Lin;
Silicon-Based Light-Emitting Devices Based on Ge Self-Assembled Quantum Dots Embedded in Optical Cavities
2012 / IEEE
By: Xuejun Xu; Narusawa, S.; Chiba, T.; Shiraki, Y.; Jinsong Xia; Usami, N.; Maruizumi, T.; Tsuboi, T.;
Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes
2012 / IEEE
By: Su-Ik Park; Jong-In Shim; Han-Youl Ryu; Dong-Soo Shin; Hyun-Sung Kim; Dong-Hyun Jang; Jong-Ik Lee;
Effects of Positive-Biased Conditions of Address Electrode During Sustain Discharge on Permanent Image Sticking in AC Plasma Display Panel
2012 / IEEE
By: Choon-Sang Park; Heung-Sik Tae;
Quality of a 28 cm Long LYSO Crystal and Progress on Optical and Scintillation Properties
2012 / IEEE
By: Ren-Yuan Zhu; Liyuan Zhang; Rihua Mao;
Growth, Emission and Scintillation Properties of Tb-Sc Doped LuAG Epitaxial Films
2012 / IEEE
By: Kucera, M.; Beitlerova, A.; Onderisinova, Z.; Hanus, M.; Nikl, M.;
Single Crystalline Film Scintillators Based on the Orthosilicate, Perovskite and Garnet Compounds
2012 / IEEE
By: Grinyov, B.; Sidletskiy, O.; Gorbenko, V.; Voznyak, T.; Savchyn, V.; Nikl, M.; Zorenko, Y.; Douissard, P.; Martin, T.; Mares, J.;
Thermally Stimulated Luminescence in Ce-Doped Yttrium Oxyorthosilicate
2012 / IEEE
By: Chewpraditkul, W.; Horodysky, P.; Vavru, K.; Mihokova, E.; Nikl, M.; Jary, V.;
Fabrication of In-Doped ZnO Scintillator Mounted on a Vacuum Flange
2012 / IEEE
By: Shimizu, T.; Nakazato, T.; Cadatal-Raduban, M.; Takeda, K.; Sakai, K.; Sarukura, N.; Wakamiya, A.; Kano, M.; Yamanoi, K.; Fukuda, T.;
Modification of the Luminescence Properties of CZT Crystals Around Tellurium Inclusions
2012 / IEEE
By: Zambelli, N.; Marchini, L.; Benassi, G.; Calestani, D.; Zappettini, A.;
The Origins of Scintillator Non-Proportionality
2012 / IEEE
By: Moses, W.W.; Choong, W.; Grim, J.Q.; Li, Q.; Singh, J.; Vasil'ev, A.N.; Payne, S.A.; Williams, R.T.; Bizarri, G.A.;
Improvement of Temporal Image Sticking Characteristics Using Negative Sustain Waveform in AC Plasma Display Panel
2012 / IEEE
By: Jae Hyun Kim; Choon-Sang Park; Sung-Il Chien; Heung-Sik Tae;
Surface Modification of Polycarbonate by Atmospheric-Pressure Plasma Jets
2012 / IEEE
By: Kostov, K.G.; Mello, C.B.; de Campos, K.A.; de Oliveira Hein, L.R.; Machida, M.;
LPE Growth and Scintillation Properties of (Zn,Mg)O Single Crystalline Film
2012 / IEEE
By: Sekiwa, H.; Miyamoto, M.; Kikuchi, M.; Futami, Y.; Wakahara, S.; Sugiyama, M.; Nikl, M.; Yokota, Y.; Kurosawa, S.; Fujimoto, Y.; Yanagida, T.; Yoshikawa, A.; Yamaji, A.;
Threshold Characteristics of Quantum Dot Rolled-Up Microtube Lasers
2012 / IEEE
By: Junseok Heo; Bhattacharya, P.; Bhowmick, S.;
Light-Induced Photoluminescence Switching Using Liquid Crystal-Dispersed Quantum Dots
2012 / IEEE
By: Wei-Ting Chang; Min-Chi Cheng; Yu-Chuan Su; Chih-Chien Chu; Hsiao, V.K.S.; Prasad, P.N.; Wing-Cheung Law; Ken-Tye Yong;
Room Temperature Ferromagnetism in Lithium-Doped ZnO
2012 / IEEE
By: Wang, Y.K.; Yang, H.L.; Xu, X.G.; Ran, C.J.; Jiang, Y.; Miao, J.;
Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells
2012 / IEEE
By: Huang, J.Y.T.; Jeng-Ya Yeh; Menoni, C.S.; Pikal, J.M.; Mawst, L.J.; Patel, D.; Lifang Xu; Tansu, N.;
New Approaches to Improve Timing Resolution in Scintillators
2012 / IEEE
By: Lecoq, P.;
Dependency of Plasmonic Enhancement on the Refractive Index of the Dielectric Bottom Layer of Ag Nanoparticles
2012 / IEEE
By: Myeongcheol Kim; Seong Min Lee; Kyung Cheol Choi;
Light Emission Enhancement From Er-Doped Silicon Photonic Crystal Double-Heterostructure Microcavity
2012 / IEEE
By: Yue Wang; Xiongwei Hu; Hongjie Wang; Jianguang Li; Junming An; Yuanda Wu; Jiashun Zhang;
Superposition and Reciprocity in the Electroluminescence and Photoluminescence of Solar Cells
2012 / IEEE
By: Rau, U.;
Separation of Front and Backside Surface Recombination by Photoluminescence Imaging on Both Wafer Sides
2012 / IEEE
By: Giesecke, J. A.; Michl, B.; Schubert, M. C.; Warta, W.;
Electrical Properties and Reliability of ZnO-Based Nanorod Current Emitters
2012 / IEEE
By: Tseung-Yuen Tseng; Sheng-He Huang; Pang Lin; I-Chuan Yao;
Investigating Internal Gettering of Iron at Grain Boundaries in Multicrystalline Silicon via Photoluminescence Imaging
2012 / IEEE
By: AnYao Liu; Macdonald, D.; Sieu Pheng Phang; Walter, D.;
Real-Time Structural Analysis of Compositionally Graded InGaAs/GaAs(0 0 1) Layers
2012 / IEEE
By: Ohshita, Y.; Kamiya, I.; Wen Hu; Kozu, M.; Takahasi, M.; Yamaguchi, M.; Ikeda, K.; Inagaki, M.; Suzuki, H.; Sasaki, T.; Shimomura, K.;
Room-Temperature Electro-Luminescence of Type-II GaSb/GaAs Quantum Rings
2012 / IEEE
By: Wei-Hsun Lin; Shih-Yen Lin; Shung-Yi Wu; Meng-Yu Lin;
Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction
2012 / IEEE
By: Chen, C.; Wang, Z.; Hao Wu; Wang, T.; Chang Liu;
Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer
2012 / IEEE
By: Jun Ma; Yi-An Yin; Xue-Liang Zhu; Yun-Yan Zhang;
Enhanced Carrier Escape in MSQW Solar Cell and Its Impact on Photovoltaics Performance
2012 / IEEE
By: Nakano, Y.; Sugiyama, M.; Watanabe, K.; Yunpeng Wang; Yu Wen;
Heteroepitaxy for GaAs on Nanopatterned Si (001)
2012 / IEEE
By: Yan-Kuin Su; Yung-Feng Chen; Chao-Wei Hsu;
Simulation of Surface Plasmon Coupled Conjugate Polymer for Polymer Light-Emitting Diodes
2012 / IEEE
By: Jin Yeong Kim; Kwan Hyun Cho; Ye Won Yeo; Kyung Cheol Choi;
Flexible Photoluminescent Display Fabricated With Low-Temperature Process Using PET Substrates
2012 / IEEE
By: Kyung Cheol Choi; Kukjoo Kim; Cheol Jang;
Photoexcitations From Intrachain and Interchain Excitons of Surface Plasmon Mediated Conjugated Polymers for PLED
2012 / IEEE
By: Je-Hyung Kim; Kyung Cheol Choi; Kwan Hyun Cho; Yong-Hoon Cho;
Preparation of SrAl2O4:Eu phosphor thin films by intense pulsed ion-beam evaporation
2000 / IEEE
By: Kato, K.; Sengiku, M.; Kaneko, F.; Shinbo, K.; Oda, Y.; Ogura, Y.; Yatsui, K.; Jiang, W.;
Luminescent properties of SrAl2O4:Eu thin films deposited by intense pulsed ion-beam evaporration
2000 / IEEE
By: Shinbo, K.; Kato, K.; Ogura, Y.; Yatsui, K.; Sengiku, M.; Oda, Y.; Kaneko, F.;
Comparison of � and �-ray irradiation effects in sol-gel Ge-doped SiO2
2009 / IEEE / 978-1-4577-0493-2
By: Agnello, S.; Alessi, A.; Brichard, B.; Oproiu, C.; Sporea, D.G.; Gelardi, F.M.;
Synthesis and characterization of lanthanide halide scintillating nanocrystals for gamma radiation detection
2010 / IEEE / 978-1-4244-5261-3
By: Smolyakov, G.A.; Rivera, A.C.; Medina, G.; Akins, B.A.; Withers, N.J.; Plumley, J.B.; Osinski, M.;
Highly luminescent LaF3:Eu3+ nanoparticles through surface modification
2010 / IEEE / 978-1-4244-5261-3
By: Williams, G.; Janssens, S.; Clarke, D.;
Fluorescent gold nanoparticles produced by femtosecond laser ablation with CTAB as a surfactant
2010 / IEEE / 978-1-4244-5261-3
By: Withford, M.J.; Sobhan, M.A.; Goldys, E.M.;
Photoluminescence of AlGaN/GaN heterostructures with two-dimensional electron gas and unknown acceptor center
2011 / IEEE / 978-1-61284-795-5
By: Aleksandrov, I.A.; Malin, T.V.; Zhuravlev, K.S.; Osinnykh, I.V.;
Luminescence properties of as-grown and annealed InGaAs quantum dots on cross-hatch patterns
2011 / IEEE / 978-1-4577-0378-2
By: Himwas, C.; Kanjanachuchai, S.; Panyakeow, S.; Thainoi, S.;
Generation of energetic compounds for calibration of explosives vapor detectors
2011 / IEEE / 978-1-4577-0624-0
By: Caron, T.; Frenois, C.; Hairault, L.; Pasquinet, E.; Barthet, C.; Montmeat, P.; Eloy, N.; Veignal, F.; Bouhadid, M.;
Photoluminescence and Raman analysis of ZnO microwires synthesized by chemical vapour deposition
2011 / IEEE / 978-1-61284-774-0
By: Yu Qiu; Wang, L.; Heqiu Zhang; Lizhong Hu; Ye Lang; Jin xue Ma; Jiuyu Ji; Guangwei Qu; Guoqiang Liu;
Realization of InGaN solar cells with InGaN/GaN superlattice absorption layers by metalorganic vapor phase epitaxy (MOVPE)
2011 / IEEE / 978-1-4577-0378-2
By: Gong-Cheng Fan; Yu-Sheng Lee; Zhong-Fan Xu; Chia-Lung Tsai;
Time resolved measurement of interface and bulk recombination of solar cell materials
2011 / IEEE / 978-3-8007-3356-9
By: Dobrich, A.; Schwarzburg, K.; Szabo, N.; Hannappel, T.;
Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxy
2011 / IEEE / 978-3-8007-3356-9
By: Tawil, S.N.M.; Asahi, H.; Hasegawa, S.; Emura, S.; Krishnamurthy, D.; Zhou, Y.K.;
Long wavelength emission from nano-cone structures with embedded single InAs/InGaAlAs quantum dots grown on InP substrates
2011 / IEEE / 978-3-8007-3356-9
By: Huh, J.-H.; Hermannstadter, C.; Suemune, I.; Sasakura, H.; Jahan, N.A.;
MOVPE growth and optical properties of wurtzite InP nanowires with radial InP/InAsP quantum wells
2011 / IEEE / 978-3-8007-3356-9
By: Borgstrom, M.T.; Lindgren, D.; Heurlin, M.; Kawaguchi, K.; Samuelson, L.;
Optical properties of wurtzite InAs/InP core-shell nanowires grown on silicon substrates
2011 / IEEE / 978-3-8007-3356-9
By: Ilahi, B.; Patriarche, G.; Naji, K.; Chauvin, N.; Maaref, H.; Khmissi, H.; Gendry, M.; Hadj Alouane, M.H.; Bru-Chevallie, C.;
Photoluminescence peak wavelength behavior of InAs/InGaAsP/InP quantum dots structure
2011 / IEEE / 978-3-8007-3356-9
By: Imai, H.; Akimoto, M.; Esaki, M.; Fukuda, A.;
Positioned growth and spectroscopy of InP nanowires containing single InAsP quantum dots
2011 / IEEE / 978-3-8007-3356-9
By: Wu, X.; Mnaymneh, K.; Lapointe, J.; Dalacu, D.; Poole, P.J.;
Influence of La doping on the structural and optical properties of ZnO nanorods
2011 / IEEE / 978-1-4577-0378-2
By: Young, S.L.; Shih, Y.T.; Horng, L.; Kung, C.Y.; Chen, H.Z.; Ou, C.R.; Lin, C.C.; Lin, C.H.; Kao, M.C.;
High quality indium nitride films grown on GZO/si substrate
2011 / IEEE / 978-1-4577-0378-2
By: Chien-Nan Hsiao; Shou-Yi Kuo; Wei-Chun Chen;
Fabrication and characterization of nano-structured aluminum-doped zinc oxide films
2011 / IEEE / 978-1-4577-0378-2
By: Wei-Chun Chen; Fang-I Lai; Shou-Yi Kuo; Kang-Yuan Lee; Hung-Wen Huang; Woei-Tyng Lin;
Heterojunction luminescence of GaN/AlN core-shell nanowire
2011 / IEEE / 978-1-4577-0378-2
By: Jing-Yuan Chang; Hue-Min Wu;
Effect of noble metal core plasmons on spectroscopic properties of organic shell
2011 / IEEE / 978-1-4577-0378-2
By: Vitukhnovsky, A.; Chubich, D.; Cheng, C.L.; Perevedentseva, E.;
Carrier injection in GaAsPN/GaPN quantum wells on Silicon
2011 / IEEE / 978-3-8007-3356-9
By: Jancu, J.-M.; Durand, O.; Burin, J.-P.; Richard, S.; Letoublon, A.; Perrin, M.; Elias, G.; Bondi, A.; Guo, W.; Thanh, T.N.; Robert, C.; Cornet, C.; Le Corre, A.; Ponchet, A.; Bertru, N.; Folliot, H.; Loualiche, S.; Even, J.;
Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performance
2011 / IEEE / 978-3-8007-3356-9
By: Nakano, Y.; Sugiyama, M.; Yunpeng Wang; Yu Wen;
Effect of MOVPE growth conditions on the formation of self-organized InAs/InGaAsP/InP quantum dots
2011 / IEEE / 978-3-8007-3356-9
By: Pohl, U.W.; Kuenzel, H.; Wenning, F.;
Annealing-induced structural changes in TlInGaAsN heterostructures studied by X-ray photoelectron spectroscopy
2011 / IEEE / 978-3-8007-3356-9
By: Kim, W.B.; Kim, K.M.; Asahi, H.; Hasegawa, S.; Kobayashi, H.; Ishimaru, M.; Krishnamurthy, D.;
ZnO thin films produced by the RF magnetron sputtering
2011 / IEEE / 978-1-61284-088-8
By: Yangan Yan; Jing Wang; Huawa Yu; Yali Du; Hanchen Liu; Bin Gao; Xin Wang;
Superparamagnetic and photoluminescence of nanohole-arrayed MnZn ferrite thin film on PAA/GaN/sapphire thin films
2011 / IEEE / 978-1-61284-777-1
By: Liu, H.H.; Hsu, C.; Weng, W.P.; Wang, J.C.;
The detection filter choice of the OSL dating instrument
2011 / IEEE / 978-1-61284-088-8
By: Guang-xiang Wang; Ping Liang; Ji-hua Wen;
Development of OLED materials with high triplet energy and electron mobility for display and lighting applications
2011 / IEEE / 978-986-02-8974-9
By: Wang, K.;
Hydrothermal synthesis and optical properties of ZnO particles
2011 / IEEE / 978-1-61284-088-8
By: Jianbin Zhang; Zhouhu Deng;
Optical emission for InGaAs quantum dots with anodic-aluminum-oxide membrane
2011 / IEEE / 978-986-02-8974-9
By: Chuang, K.Y.; Lay, T.S.; Tzeng, T.E.; Yang, K.L.;
Optical modulation of nanoporous alumina anodic oxide thin film on sapphire by the superparamagnetic from nano patterns upon
2011 / IEEE / 978-1-61284-777-1
By: Wang, J.C.; Weng, W.P.; Liu, H.H.; Hsu, C.;
Effective photoluminescence in a large-area array of Ta2O5 nanodots (PL of Ta2O5 nanodots)
2011 / IEEE / 978-1-61284-777-1
By: Yuan-Ron Ma; Patil, R.R.; Jin-Han Lin; Ching-Ling Lin; Devan, R.S.;
Photoluminescence investigation of GaAs quantum nanostructures
2011 / IEEE / 978-1-4577-2112-0
By: Nemcsics, A.; Podor, B.; Stemmann, A.; Makai, J.; Balazs, J.;
Cantilever actuator processing to control photoluminescence of quantum wells coupled across nanoscale air gaps
2011 / IEEE / 978-1-4577-0336-2
By: Saarinen, M.J.; Chan, W.S.; Talghader, J.J.;
Numerical and experimental investigation of upconversion in Er doped sol-gel SiO2
2011 / IEEE / 978-1-61284-878-5
By: Arnold, P.L.; Ayodele, O.; Sujecki, S.; Weinstein, J.A.; Sazanovich, I.V.; Phillips, A.; Ali, M.I.;
Subbandgap photoluminescence of Si photonic crystal nanocavity at room temperature
2011 / IEEE / 978-1-4244-8340-2
By: Portalupi, S.L.; Lo Savio, R.; Priolo, F.; Galli, M.; O'Faolain, L.; Shakoor, A.; Welna, K.; Franzo, G.; Irrera, A.; Krauss, T.F.; Andreani, L.C.; Guizzetti, G.; Gerace, D.;
1.54 �m electroluminescence in SiC:Er2O3 films
2011 / IEEE / 978-1-4244-8340-2
By: Yin, Y.; Qin, G.G.; Ran, G.Z.;
Luminescence structures on the basis of porous anodic alumina
2011 / IEEE / 978-966-335-357-9
By: Kochev, A.S.; Nikolaenko, I.A.; Stepanova, L.S.; Gaponenko, N.V.; Orekhovskaya, T.I.;
Investigation of recombination process at photoluminescence in semicoductor materials with the help of microwave-method
2011 / IEEE / 978-966-335-357-9
By: Bulanyi, M.F.; Omelrchenko, S.A.; Skuratovskaya, E.V.; Kovalenko, A.V.;
Low temperature behavior of fluorescent inorganic materials
2011 / IEEE / 978-4-907764-39-5
By: Komuro, S.; Katsumata, T.; Aizawa, H.;
Quantum dot device
2011 / IEEE / 978-1-55752-932-9
By: Coleman, J.J.;
Carbon nanotubes based photonics: Towards the laser
2011 / IEEE / 978-1-4244-6051-9
By: Cassan, E.; Marris-Morini, D.; Beck, A.; Le Roux, X.; Gaufres, E.; Izard, N.; Vivien, L.;
Electroluminescence from Er doped SiO2/nc-Si multilayers under lateral carrier injection
2011 / IEEE / 978-1-4244-8340-2
By: Ni, K.S.; Fauchet, P.M.; Yijing Fu; Krzyzanowska, H.;
First-principles study of light emission from silicon and germanium due to direct transitions
2011 / IEEE / 978-1-4244-8340-2
By: Saito, S.-I.; Suwa, Y.;
Influence of Alq3:C545T on Luminescence of Blue LED
2011 / IEEE / 978-1-4577-0755-1
By: Bi Changdong; Li Yanfei; Zhang Fanghui;
Investigations of cooperative luminescence in Yb-doped optical fiber due to different transitions between sublevels
2011 / IEEE / 978-1-4577-0509-0
By: Hosako, I.; Sekine, N.; Nagano, S.; Hamazaki, J.;
Photoluminescent effect of Ag2S coated ZnS nanoparticles
2011 / IEEE / 978-963-8111-77-7
By: Babu, N.S.; Khadar, M.A.;
Amorphous molybdenum oxide nanorods for electrochromic applications
2011 / IEEE / 978-963-8111-77-7
By: Kumar, R.V.; Navas, I.; Pillai, V.P.M.; Maniammal, K.;
Rapid photothermal processing for functionalization of nanostructured thin films
2011 / IEEE / 978-1-61284-172-4
By: Tiginyanu, I.; Lupan, O.; Ghimpu, L.; Ursaki, V.V.; Shishiyanu, S.; Shishiyanu, T.;
High luminescence efficient Ga polarity domain GaN realized on Si(111) by MOVPE
2011 / IEEE / 978-1-61284-846-4
By: Ghosh, B.K.; Yamamoto, A.; Saad, I.;
Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer
2011 / IEEE / 978-1-61284-846-4
By: Alias, M.S.; Mitani, S.M.; Exhan, F.M.; Manaf, A.A.;
Structural characterization of AlN and AlGaN layers grown on GaN/AlN/Si 111 by plasma-assisted MBE
2011 / IEEE / 978-1-4577-1549-5
By: Yusoff, M.Z.M.; Yunus, M.B.M.; Yusof, Y.; Ahmad, A.; Chin Che Woei; Mahyuddin, A.; Hassan, Z.;
Photoluminescence properties of BaxSryLizSiO4:Ce3+, Mn2+ phosphors for NUV-LED lighting
2011 / IEEE / 978-1-4673-0149-7
By: Yisen Lin; La Chen; Hao Xue; Liqing Hong; Zhaoxian Xiong;

Next Page
Return To Top