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Topic: P-n Junctions

Results

Extension of the ADC Charge-Collection Model to Include Multiple Junctions
2011 / IEEE
By: Edmonds, L.D.;
A Theoretical Analysis of the Role of Ambipolar Diffusion in Charge-Carrier Transport in a Quasi-Neutral Region Under High Injection
2011 / IEEE
By: Edmonds, L.D.;
Dose Rate Effects in Linear Bipolar Transistors
2011 / IEEE
By: Harris, R.D.; Swimm, R.; Johnston, A.; Thorbourn, D.;
The Shuttle Nanoelectromechanical Nonvolatile Memory
2012 / IEEE
By: Tsai, J.M.-L.; Vaddi, R.; Geng Li Chua; Pott, V.; Kim, T.T.;
Study of a Simple Linearization Technique of p-n-Junction-Type Anemometric Flow Sensor
2012 / IEEE
By: Bera, S.C.; Marick, S.;
Some Semiconductor Device Physics Considerations and Clarifications
2012 / IEEE
By: Schroder, D.K.; Xuan Yang;
Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect
2012 / IEEE
By: Zhang, E.X.; Bhuva, B.L.; Gaspard, N.J.; Marshall, C.J.; Pellish, J.A.; Jordan, S.; Salzman, J.F.; Wong, R.; Wen, S.; McMorrow, D.; Roche, N.J.; Warner, J.H.; Schrimpf, R.D.; Reed, R.A.; Hooten, N.C.; Dodds, N.A.; Bennett, W.G.;
Split-Gate-Enhanced UMOSFET With an Optimized Layout of Trench Surrounding Mesa
2012 / IEEE
By: Ying Wang; Wen-li Jiao; Hai-Fan Hu;
Novel Layout Technique for N-Hit Single-Event Transient Mitigation via Source-Extension
2012 / IEEE
By: Yaqing Chi; Yibai He; Shuming Chen; Jianjun Chen; Biwei Liu; Bin Liang; Junrui Qin;
Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients
2012 / IEEE
By: Reed, R.A.; Bennett, W.G.; Hooten, N.C.; Schrimpf, R.D.; Kauppila, J.S.; Mendenhall, M.H.; Warren, K.M.; Weller, R.A.;
Electro-Optical Performances of p-on-n and n-on-p Silicon Photomultipliers
2012 / IEEE
By: Abbisso, S.; Los, S.; Ronzhin, A.; Mazzillo, M.; Ramberg, E.; Sanfilippo, D.; Fallica, G.; Albrow, M.; Piana, A.; Carbone, B.; Valvo, G.;
A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysis
2012 / IEEE
By: Reddy, K.V.S.; Narang, R.; Gupta, M.; Gupta, R.S.; Saxena, M.;
An Equivalent Circuit Model of the Traveling Wave Electrode for Carrier-Depletion-Based Silicon Optical Modulators
2012 / IEEE
By: Bogaerts, W.; Hui Yu;
Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode
2012 / IEEE
By: Wanjun Chen; Bo Zhang; Jin Wei; Huaping Jiang; Zhaoji Li; Ming Qiao;
p-Type Electrical Transport of Chemically Doped Epitaxial Graphene Nanoribbons
2012 / IEEE
By: Bryan, S.E.; Brenner, K.; Yinxiao Yang; Murali, R.; Meindl, J.D.;
A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications
2012 / IEEE
By: Gossner, H.; Shrivastava, M.; Rao, V.R.;
Experimental Study of Design Parameters in Silicon Micropillar Array Solar Cells Produced by Soft Lithography and Metal-Assisted Chemical Etching
2012 / IEEE
By: Chanda, D.; Jae Cheol Shin; Xiuling Li; Rogers, J.A.; Ki Jun Yu; Chern, W.;
Synergistic Effects of Rear-Surface Passivation and the Metal Wrap Through Concept
2012 / IEEE
By: Wolf, A.; Saint-Cast, P.; Fellmeth, T.; Drews, A.; Clement, F.; Biro, D.; Thaidigsmann, B.; Preu, R.;
Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annealing
2012 / IEEE
By: Youdou Zheng; Rong Zhang; Hai Lu; Bin Liu; Yanli Liu; Dunjun Chen; Jun Jun Xue;
Making Micrologic: The Development of the Planar IC at Fairchild Semiconductor, 1957–1963
2012 / IEEE
By: Laws, D.A.; Riordan, M.;
Multijunction ac or dc integrated GaP light emitting diode array
1974 / IEEE
By: North, J.C.; Koszi, L.A.; Schumaker, N.E.; Spitzer, S.M.;
Layout-oriented simulation of non-destructive single event effects in CMOS IC blocks
2009 / IEEE / 978-1-4577-0493-2
By: Liberali, V.; Do, E.; Calligaro, C.; Stabile, A.;
Using dimensionality to achieve a sharp tunneling FET (TFET) turn-on
2011 / IEEE / 978-1-61284-244-8
By: Yablonovitch, E.; Agarwal, S.;
Optically controllable emitter array with pn-junction integrated Si tip
2011 / IEEE / 978-3-00-035081-8
By: Miyashita, H.; Tanaka, Y.; Ono, T.; Esashi, M.; Tomono, E.;
Electrical transport in carbon nanotube intermolecular p-n junctions
2011 / IEEE / 978-1-4577-0378-2
By: Hong Li; Beng Kang Tay; Chin Chong Yap; Qing Zhang;
Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions
2011 / IEEE / 978-1-4577-0192-4
By: Agarwal, A.K.; Palmour, J.W.; Shur, M.S.; Levinshtein, M.E.; Rumyantsev, S.L.; Das, M.K.;
Model of effect of pn-junction magnetic field modulation
2011 / IEEE / 978-1-61284-795-5
By: Shamanaev, S.V.; Tikhonov, R.D.; Polomoshnov, S.A.; Cheremisinov, A.A.; Kozlov, A.V.;
Practical application of 2D dopant profiling by LV-SEM
2011 / IEEE / 978-1-4577-0158-0
By: Kim, H.J.; Kim, W.; Kwak, N.Y.; Yang, J.M.; Hyun, H.Y.; Hyun, M.S.;
Negative drain pulse stress induced two-stage degradation of P-channel poly-Si thin-film transistors
2011 / IEEE / 978-1-4577-0158-0
By: Meng Zhang; Mingxiang Wang; Xiaowei Lu; Man Wong;
Effect of three-dimensional cylindrical hole array on energy conversion efficiency of radioisotope battery
2011 / IEEE / 978-1-61284-777-1
By: Shulin Yao; Zaijun Cheng; Zhiwen Zhao; Haisheng San; Yanfei Li; Zhiqiang Deng;
Integrated simulator for single photon avalanche diodes
2011 / IEEE / 978-1-61284-878-5
By: Tosi, A.; Acerbi, F.; Anti, M.; Zappa, F.;
Physically-consistent parameterization in the modeling of solar photovoltaic devices
2011 / IEEE / 978-1-4244-8418-8
By: Midtgard, O.-M.; Yordanov, G.H.;
Enhanced NQS lauritzen diode model
2011 / IEEE / 978-83-932075-2-7
By: Bet'ak, P.; Sochova, L.; Plojhar, J.;
Technology and electrical design of IGBT
2011 / IEEE / 978-83-932075-2-7
By: Shelibak, I.; Artamonov, A.; Nelayev, V.;
First principle and electrical simulation with characterization of GaN/(4H)SiC heterostructure vertical PN power diode
2011 / IEEE / 978-90-75815-14-6
By: Mazumder, S.K.; Bose, S.;
Energy extraction characteristic study of solar photovoltaic cells and modules
2011 / IEEE / 978-1-4577-1002-5
By: Huiying Zheng; Shuhui Li;
The reverse and forward gate-diode drain current in ultra-thin LDD nMOSFET's
2011 / IEEE / 978-1-61284-722-1
By: Chen Haifeng; Du Huimin;
Fundamentals and current status of steep-slope tunnel field-effect transistors
2011 / IEEE / 978-1-4577-0704-9
By: Seabaugh, A.;
Band-gap circuit design challenges in high-performance 32-nm technology
2011 / IEEE / 978-1-4577-0223-5
By: Prakash, A.; Tamayo, F.; Robinson, M.; Meyers, S.; Fletcher, J.; Buller, J.F.; Cabler, D.;
10 Gbit/s silicon modulator based on interdigitated PN junctions
2011 / IEEE / 978-1-4244-8340-2
By: Marris-Morini, D.; Ziebell, M.; Vivien, L.; Cassan, E.; Rasigade, G.; Grosse, P.; Fedeli, J.; Crozat, P.;
Analysis and design of high-current constant-current driver for laser diode bar
2011 / IEEE / 978-1-4577-0321-8
By: Dong Chuanjie; Huang Hong;
Prognostics and reliability assessment of light emitting diode packaging
2011 / IEEE / 978-1-4577-1769-7
By: Bailey, C.; Sutharssan, T.; Rosunally, Y.; Stoyanov, S.;
Mechanical and electronic analysis of 3D embedded capacitor filling with conductive adhesive
2011 / IEEE / 978-1-4577-1769-7
By: Daquan Yu; Huijuan Wang; Lixi Wan; Liqiang Cao; Fengwei Dai; Ran He;
Monolayer graphene nanoribbon p-n junction
2011 / IEEE / 978-1-61284-846-4
By: Moghaddam, N.S.; Ismail, R.; Moghaddam, H.S.; Amin, N.A.; Rahmani, M.; Ahmadi, M.T.;
Optimization of arsenic and phosphorus Source/Drain implantation for low power NMOS device
2011 / IEEE / 978-1-4577-0144-3
By: Kim Eui Choong; Entalai, W.; Liew, J.; Ai Qiang;
Study on the variation in thermal resistance and junction temperature of GaN based LEDs using thermal transient measurement
2011 / IEEE / 978-1-4577-0144-3
By: Keng, L.C.; Kean Yew, L.; Teeba, N.; Mutharasu, D.; Dinash, K.; Anithambigai, P.;
Fabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation source
2011 / IEEE / 978-1-4577-1997-4
By: Yuming Zhang; Yanqiang Shi; Hui Guo; Jisheng Han; Yujuan Zhang;
IGBT technology design and device optimization
2011 / IEEE / 978-1-4577-1958-5
By: Turtsevich, A.; Shelibak, I.; Nelayev, V.; Artamonov, A.;
Study on flip chip assembly of high density micro-LED array
2011 / IEEE / 978-1-4577-1389-7
By: Ming-Hsien Wu; Chao-Chyun An; Wen-Yung Yeh; Chia-Hsin Chao; Tai-Hong Chen; Yu-Wei Huang;
Calibration of the weighed sensitive volume model to heavy ion experimental data
2011 / IEEE / 978-1-4577-0586-1
By: Daly, E.J.; Garcia, R.; Mendenhall, M.H.; Sierawski, B.D.; Santin, G.; Nieminen, P.; Evans, H.D.R.;
GaAs Solar Cell: Effect of P-Layer Thickness on Device Parameter
2011 / IEEE / 978-1-4577-2037-6
By: Mangal, S.; Banerji, P.;
Precise comparison of two-dimensional dopant profiles measured by electron holography and scanning capacitance microscopy
2011 / IEEE / 978-1-4577-2141-0
By: Noh-Yeal Kwak; Jeoung Woo Kim; Moon Seop Hyun; Jung Ho Yoo; Won Kim; Shaislamov, U.; Jun-Mo Yang; Joong Keun Park;
Performance study of monolithic pixel detectors fabricated with FD-SOI technology
2011 / IEEE / 978-1-4673-0120-6
By: Ichimiya, R.; Arai, Y.; Miyoshi, T.; Takeda, A.; Ikemoto, Y.;
CdTe diode detectors with a p-n junction formed by laser-induced doping
2011 / IEEE / 978-1-4673-0120-6
By: Aoki, T.; Gnatyuk, V.A.; Levytskyi, S.N.; Vlasenko, O.I.;
Effect of infrared filter on the electrical characteristics of silicon-based PIN photo-detectors
2011 / IEEE / 978-1-4577-1756-7
By: Choi, B.D.; Kim, H.J.;
Crosstalk effects of avalanche CMOS photodiodes
2011 / IEEE / 978-1-4244-9289-3
By: Zhe Ming Liu; Meng-Lin Hsia; Chen, O.T.-C.; Chieh Ning Chan;
Population Flow Model of China's Developed Cities Based on P-N Junction Model
2011 / IEEE / 978-1-4577-1419-1
By: Huina Tang; Weiling Su; Tong Li;
A 21 V output charge pump circuit with appropriate well-bias supply technique in 0.18 �m Si CMOS
2011 / IEEE / 978-1-4577-0711-7
By: Shirane, A.; Masu, K.; Ishihara, N.; Ito, H.;
Aqueous synthesis of n-/p-type ZnO nanorods on porous silicon for the application of p-n junction device
2011 / IEEE / 978-1-4577-1516-7
By: Donghwan Lee; Jongtaek Lee; Taehee Park; Jungwoo Lee; Eunkyung Park; Whikun Yi;
Optoelectronic characterization of 4H-SiC avalanche photodiodes operated in DC and in geiger mode
2011 / IEEE / 978-1-4577-1756-7
By: Soloviev, S.; Dandin, M.; Vert, A.; Akturk, A.; Sandvik, P.; Cheung, K.P.; Abshire, P.; Goldsman, N.; Potbhare, S.;
Realization of vertically-aligned GaN n-p core-shell nanoscale structures using top-down fabrication
2011 / IEEE / 978-1-4577-1756-7
By: Paramanik, D.; Nikoobakht, B.; Davydov, A.V.; Cramer, H.; Gupta, S.; McLaughlin, S.; King, M.; Motayed, A.; Krylyuk, S.; Aluri, G.;
Tunable transmission Gap in graphene p-n junction
2011 / IEEE / 978-1-4577-1756-7
By: Ghosha, A.W.; Sajjad, R.N.;
Realization of n-ZnO:Ga / p-ZnO:GaP homojunction by RF magnetron sputtering
2011 / IEEE / 978-1-4577-1756-7
By: Balakrishnan, L.; Gowrishankar, S.; Gopalakrishnan, N.; Balasubramanian, T.;
Charge transfer region at the edge of metal contacts on graphene and its impact on contact resistance measurement
2011 / IEEE / 978-1-4577-1756-7
By: Asbeck, P.M.; Ohoka, A.; Lee, K.M.;
Incidence angle-dependent transport across a single graphene p-n junction
2011 / IEEE / 978-1-4577-1756-7
By: Comfort, E.; Sutar, S.; Ji Ung Lee;
Circuit design for 128Mb PCRAM based on 40nm technology
2011 / IEEE / 978-1-4577-1431-3
By: Xi Li; Houpeng Chen; Daolin Cai; Zhitang Song; Qian Wang;
Regulation of output power of a Photovoltaic Module
2011 / IEEE / 978-1-4673-0136-7
By: Ghosh, A.; Majumdar, S.;
Silicon nanohole photovoltaic cells
2011 / IEEE / 978-1-4244-9965-6
By: Shen, H.; Chen, D.M.; Chen, Y.F.; Feng, C.K.; Zhang, B.J.; Chen, Y.; Leung, K.K.; Zhao, Y.Q.; Surya, C.;
Optical absorption enhancement in silicon nanohole arrays for photovoltaics
2011 / IEEE / 978-1-4244-9965-6
By: Ting-Gang Chen; Feng-Yu Chang; Bo-Yu Huang; Peichen Yu;
Voltage increase for thin silicon solar cells utilizing epitaxial lateral overgrowth
2011 / IEEE / 978-1-4244-9965-6
By: Barnett, A.; Leitz, C.; Lochtefeld, A.; Shreve, K.; Murcia, C.P.; Ruiying Hao;
Experimental thermal resistance evaluation of a three-dimensional (3D) chip stack, including the transient measurements
2012 / IEEE / 978-1-4673-1111-3
By: Sueoka, K.; Ibaraki, S.; Matsumoto, K.; Yamada, F.; Orii, Y.; Kikuchi, H.; Sakuma, K.;
Series resistance as a function of current and its application in solar cell analysis 37th IEEE photovoltaic specialists conference
2011 / IEEE / 978-1-4244-9965-6
By: Franklin, E.T.; Blakers, A.W.; McIntosh, K.R.; Kean Chern Fong;
Doping geometries for 40G carrier-depletion-based silicon optical modulators
2012 / IEEE / 978-1-55752-935-1
By: Hui Yu; Absil, P.; Moelants, M.; Wouters, J.; Verheyen, P.; Van Campenhout, J.; Leuthold, J.; Freude, W.; Koos, C.; Hillerkuss, D.; Alloatti, L.; Korn, D.; Baets, R.; Komorowska, K.; Bogaerts, W.;
Device- and system-level performance modeling for graphene P-N junction logic
2012 / IEEE / 978-1-4673-1036-9
By: Chenyun Pan; Naeemi, A.;
Optimal lateral splitting of the AM1.5 solar spectrum for a mono-Si and CdTe two cell PV array
2011 / IEEE / 978-1-4244-9965-6
By: Nelson, E.; Olson, K.; Talghader, J.; Cohen, P.;
Simulations of indium arsenide antimonide (InAs0.91Sb0.09) monovalent barrier-based thermophotovoltaic cells
2011 / IEEE / 978-1-4244-9965-6
By: Vandervelde, T.E.; DeMeo, D.F.;
DC and low-frequency noise optimization of four-gate transistors
2012 / IEEE / 978-1-4577-1117-6
By: Deen, M.J.; Marinov, O.; Villanueva, J.A.L.; Rodriguez-Bolivar, S.; Godoy, A.; Rodriguez, A.L.; Tejada, J.A.J.;
An analytical model for SOI triple RESURF devices
2011 / IEEE / 978-1-61284-193-9
By: Xingbi Chen; Yongwei Wang; Haimeng Huang;
New evaluation method of low-k dielectric films by using a gated PN-junction diode and a field MOS transistor
2012 / IEEE / 978-1-4673-1030-7
By: Ito, M.; Tamaki, Y.; Kawamoto, Y.; Hashino, M.;
Synchronous antiphased registration of biosignals by p-n junction of LED
2012 / IEEE / 978-617-607-138-9
By: Sharpan, O.; Mosiychuk, V.;
MOS solar cells with oxides deposited by sol-gel processing
2011 / IEEE / 978-1-4244-9965-6
By: Chia-Hong Huang; Jung-Hui Tsai; Chung-Cheng Chang;
A modular system of Deep Level Transient Spectroscopy
2011 / IEEE / 978-1-4577-2059-8
By: Rusli, N.; Debuf, D.;
Crystalline silicon thin film photovoltaic solar cells based on energy efficient nanomembrane transfer process
2011 / IEEE / 978-1-4244-9965-6
By: Zhenqiang Ma; Weiquan Yang; Rui Li; Weidong Zhou;
Kerf-less removal of Si, Ge and III-V layers by controlled spalling to enable low-cost PV technologies
2011 / IEEE / 978-1-4244-9965-6
By: Hekmatshoartabari, B.; Shahrjerdi, D.; Bedell, S.W.; Sadana, D.; Sosa, N.; Lauro, P.; Fogel, K.;
Generation of defects in p-n-junctions that are made from GaAs and GaAlAs after the X-ray irradiation
2012 / IEEE / 978-617-607-138-9
By: Irkha, V.; Mikhalaki, V.; Gorbachev, V.;
Low-pressure chemical vapor deposition of pureb layers on silicon for p+n junction formation
2012 / IEEE / 978-1-4673-1257-8
By: de Boer, W.D.; Nanver, L.K.; Mohammadi, V.; Mok, K.R.C.; Vlooswijk, A.H.G.;
Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-amorphised silicon
2012 / IEEE / 978-1-4673-1257-8
By: Cristiano, F.; Boninelli, S.; Hackenberg, M.; Bazizi, M.; Quillec, M.; Fazzini, P.F.; Mangelinck, D.; Blavette, D.; Cojocaru, O.; Tavernier, C.; Boulenc, P.; Duchaine, J.; Torregrosa, F.; Spiegel, Y.; Qiu, Y.; Essa, Z.;
A novel MOSFET structure with asymmetric Schottky and P-N junction source/drain on bulk silicon substrate
2012 / IEEE / 978-1-4673-1257-8
By: Zhang, D.W.; Zhiwei Zhu; Mei-Gui Chen; Cheng Hu; Peng Xu; Dongping Wu;
Fabrication and characterization of NiO/ZnO p-n junctions by sol-gel spin coating technique
2012 / IEEE / 978-1-4673-1170-0
By: Hatem, E.; Massoud, H.; Mohamed, J.; Imen, S.;
Analytical model of deeply-scaled thyristors for memory applications
2012 / IEEE / 978-1-4577-1738-3
By: Carnevale, G.; Betto, D.; Fantini, P.; Ventrice, D.; Benvenuti, A.;
Analytical analysis of a p-n junction with arbitrary shaped doping profile
2012 / IEEE / 978-1-4673-0238-8
By: Zimmermann, H.; Milovanovic, V.;
System-level optimization and benchmarking of graphene PN junction logic system based on empirical CPI model
2012 / IEEE / 978-1-4673-0145-9
By: Naeemi, A.; Chenyun Pan;
Complex behavior in a time-delayed twin-pn junction diode electromagnetic system with distortionless transmission line
2012 / IEEE / 978-1-4673-0024-7
By: Lingtao Wang; Niansheng Li;
Design of charge pump with very low conducted emission controlling the majority carrier injection
2012 / IEEE / 978-1-4577-1557-0
By: Rolland, E.; Abouda, K.;
High speed travelling wave carrier depletion silicon Mach-Zehnder modulator
2012 / IEEE / 978-1-4577-1619-5
By: Zortman, W.A.; Trotter, D.C.; DeRose, C.T.; Watts, M.R.;
Electrical Characterization of P-Ge1-xSnx/P-Ge and P-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy
2012 / IEEE / 978-1-4577-1865-6
By: Baert, B.; Ngoc Duy Nguyen; Zaima, S.; Nakatsuka, O.; Truong, D.Y.N.;
Charge Carrier Traffic at Self-Assembled Ge Quantum Dots on Si
2012 / IEEE / 978-1-4577-1865-6
By: Karmous, A.; Engstrom, O.; Kaniewska, M.; Kasper, E.; Petersson, G.;
Band to band tunneling in heterojunctions: Semi-classical versus quantum computation
2012 / IEEE / 978-1-4673-0707-9
By: Ajoy, A.;
Silicon carrier-depletion-based Mach-Zehnder and ring modulators with different doping patterns for telecommunication and optical interconnect
2012 / IEEE / 978-1-4673-2229-4
By: Van Campenhout, J.; Pantouvaki, M.; Hui Yu; Bogaerts, W.; Baets, R.; Leuthold, J.; Komorowska, K.; Hillerkuss, D.; Korn, D.; Absil, P.; Lepage, G.; Verheyen, P.; Dumon, P.;
Fabrication of Lithium Niobate p-n Junctions
2012 / IEEE / 978-1-4577-0911-1
By: Pei, Zidong; Xu, Jingjun; Rupp, Romano; Kong, Yongfa; Hu, Qian;

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