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Topic: P-doping

Results

Synthesis and characterization of N- and P- doped tin oxide nanowires

2011 / IEEE / 978-1-4577-1516-7
By: Rananavare, S.B.; Tran, H.A.;

Solvent effects on the electrochemical p-doping of PEDOT

2007 / RSC Publishing
By: A. Robert Hillman; Stanley Bruckenstein; Samantha J. Daisley;

Nanogravimetric observation of unexpected ion exchange characteristics for polypyrrole film p-doping in a deep eutectic ionic liquid

2009 / RSC Publishing
By: Karl S. Ryder; Mohamoud A. Mohamoud; Magdalena A. Skopek; A. Robert Hillman;

In situ ESR-UV-Vis-NIR spectroelectrochemical study of the p-doping of poly[2-(3-thienyl)ethyl acetate] and its hydrolyzed derivatives

2009 / RSC Publishing
By: Andrea Kellenberger; Luis F. ChaacutezaroRuiz; Lothar Dunsch; Taruna Khandelwal; HansJuumlrgen Adler; Evelin Jaumlhne;

Theoretical analysis of bistable distributed feedback lasers with detuning effect

1990 / IEEE
By: Shoji, H.; Fujii, Y.; Arakawa, Y.;

Molecular beam epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As heterojunction bipolar transistor on

1991 / IEEE
By: Bhattacharya, P.; Li, W.Q.;

Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers

1993 / IEEE
By: Rosenzweig, J.; Larkins, E.C.; Esquivias, I.; Weisser, S.; Ralston, J.D.; Fleissner, J.; Tasker, P.J.;

High-speed, low-threshold InGaAsP semi-insulating buried crescent lasers

1992 / IEEE / 0-7803-0522-1
By: Agarwal, R.; Jiang, C.-L.; Cheng, W.-H.; Wolf, D.; Renner, D.; Bowers, J.; Huang, R.-T.; Mar, A.;

Theoretical investigation of gain enhancements in strained In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers via p-doping

1994 / IEEE
By: Ralston, J.D.; Esquivias, I.; Weisser, S.; Schonfelder, A.; Rosenzweig, J.;

Differential gain, refractive index, and linewidth enhancement factor in high-speed GaAs-based MQW lasers: influence of strain and p-doping

1994 / IEEE
By: Rosenzweig, J.; Ralston, J.D.; Weisser, S.; Schonfelder, A.;

AlGaInP red laser diodes by OMVPE

1994 / IEEE / 0-7803-1476-X
By: Bringans, R.D.; Treat, D.W.; Bour, D.P.; Welch, D.F.; Geels, R.S.;

/spl alpha/-factor improvements in high-speed p-doped In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers

1993 / IEEE / 0-7803-1263-5
By: Schonfelder, A.; Rosenzweig, J.; Ralston, J.D.; Weisser, S.;

II-VI blue-green laser diodes

1995 / IEEE
By: Ishibashi, A.;

Emerging gallium nitride based devices

1995 / IEEE
By: Salvador, A.A.; Mohammad, S.N.; Morkoc, H.;

Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers

1996 / IEEE
By: Luryi, S.L.; Swaminathan, V.; Kazarinov, R.F.; Reynolds, C.L., Jr.; Belenky, G.L.; Lopata, J.;

Carrier capture and escape times in In_0.35Ga_0.65As-GaAs multiquantum-well lasers determined from high-frequency electrical impedance measurements

1996 / IEEE
By: Esquivias, I.; Rosenzweig, J.; Ralston, D.; Romero, B.; Weisser, S.;

A new approach to p-doping and the observation of efficiency enhancement in InP/InGaAs quantum well solar cells

1996 / IEEE / 0-7803-3166-4
By: Epler, J.; Pate, M.; Hopkinson, M.; Button, C.; Zachariou, A.; Nelson, J.; Griffin, P.; Barnham, K.W.J.;

Effects of transport limited nonuniform pumping for multiple quantum well semiconductor lasers

1994 / IEEE / 0-7803-1470-0
By: Lo, Y.H.; Chua, C.L.; Tsai, C.Y.; Lin, C.H.;

Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: effect of p-doping

1997 / IEEE
By: Silfvenius, C.K.V.; Olin, U.; Marcinkevicius, S.; Tessler, N.; Landgren, G.; Stalnacke, B.F.;

HCI lifetime enhancement by double implanted S/D (DISD) of Nch MOSFET in 0.25 /spl mu/m CMOS technology

1997 / IEEE / 0-7803-4205-4
By: Wu, D.; Kepler, N.; Ju, D.H.; Luning, S.;

Microscopic simulation of InGaAsP diode laser performance

1998 / IEEE / 0-7803-4223-2
By: Hybertsen, M.S.; Shtengel, G.E.; Smith, K.; Baraff, G.; Alam, M.A.;

Reduced cavity loss for ultra-low threshold vertical cavity surface emitting lasers

1999 / IEEE / 0-7803-5634-9
By: Deppe, D.G.; Zou, Z.; Huffaker, D.L.;

Effect of p-doping on the performance of high power 1.5-/spl mu/m InGaAsP MQW lasers

2000 / IEEE / 0-7803-6320-5
By: Donetsky, D.; Trussell, W.; Belenky, G.; Shterengas, L.; Maiorov, M.; Menna, R.; Garbuzov, D.; Connolly, J.;

Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-�m InGaAsP-InP multiple-quantum-well lasers

2000 / IEEE
By: Belenky, G.; Luryi, S.; Shtengel, G.E.; Donetsky, D.V.; Hybertsen, M.S.; Shterengas, L.; Reynolds, C.L., Jr.;

1.3-micron high to quantum dot lasers based on charge-controlled active regions

2003 / IEEE / 0-7803-7704-4
By: Shchekin, O.B.; Deppe, D.G.; Huang, H.;

P-doping of zinc oxide using phosphorous oxide and thermal annealing

2003 / IEEE / 0-7803-7820-2
By: Seong-Ju Park;

Two-photon optical beam induced current imaging of indium gallium nitride blue LEDs

2003 / IEEE / 0-7803-7766-4
By: Sheng-Lung Huang; Yung-Shun Wang; Mao-Kuo Huang; Fu-Jen Kao; Chi-Kuang Sun;

Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure

2004 / IEEE
By: Jung Il Lee; Il Ki Han; Duchang Heo; Jichai Jeong;

Design of High-Performance Regioregular Polythiophenes for Organic Thin-Film Transistors

2005 / IEEE
By: Ong, B.S.; Liu, P.; Wu, Y.;

Small-signal modulation characteristics of p-doped 1.1- and 1.3-/spl mu/m quantum-dot lasers

2005 / IEEE
By: Fathpour, S.; Bhattacharya, P.; Mi, Z.;

Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers

2006 / IEEE
By: Nakamura, S.; DenBaars, S.; Farrell, R.; Piprek, J.;

The influence of p-doping on the temperature sensitivity of 1.3 /spl mu/m quantum dot lasers

2005 / IEEE / 0-7803-9217-5
By: Marko, I.P.; Masse, N.F.; Sugarawa, M.; Hatori, N.; Adams, A.R.; Sweeney, S.J.;

High Performance P-doped InAs Tunnel Injection Quantum Dash Lasers on InP

2006 / IEEE / 0-7803-9558-1
By: Bhattacharya, P.; Yang, J.; Mi, Z.;

Growth and characteristics of P-doped InAs tunnel injection quantum-dash lasers on InP

2006 / IEEE
By: Yang, J.; Mi, Z.; Bhattacharya, P.;

High-Power Quantum-Dot Superluminescent Diodes With p-Doped Active Region

2006 / IEEE
By: Occhi, L.; Fiore, A.; Li, L.; Rossetti, M.; Kovsh, A.; Mikhrin, S.; Velez, C.;

DC and Dynamic Characteristics of P-Doped and Tunnel Injection 1.65-$\mu{\hbox {m}}$ InAs Quantum-Dash Lasers Grown on InP (001)

2006 / IEEE
By: Bhattacharya, P.; Mi, Z.;

Small-Signal Cross-Gain Modulation of Quantum-Dot Semiconductor Optical Amplifiers

2006 / IEEE
By: Shun Lien Chuang; Jungho Kim;

Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si

2008 / IEEE
By: Bhattacharya, P.; Zetian Mi;

The effect of p - doping in In(Ga)As quantum dot lasers

2006 / IEEE / 978-1-55752-813-1
By: Badcock, T.; Smowton, P.M.; Walker, C.L.; Sandall, I.C.; Hopkinson, M.; Liu, H.Y.; Mowbray, D.J.;

Advances in quantum dots for semiconductor lasers and single photon emitters: From science to practical implementation

2008 / IEEE / 978-1-4244-1782-7
By: Arakawa, Y.;

Optimizationof VCSEL structure for high-speed operation

2008 / IEEE / 978-1-4244-1782-7
By: Coldren, L.A.; Yu-Chia Chang;

Static and dynamic properties of p-doped quantum dash lasers on InP

2008 / IEEE / 978-1-4244-2258-6
By: Forchel, A.; Hofling, S.; von Hinten, V.; Hein, S.;

Influence of P-doping in quantum dot semiconductor optical amplifiers at 1.3 �m

2009 / IEEE / 978-1-4244-4825-8
By: Schmeckebier, H.; Fiol, G.; Meuer, C.; Bimberg, D.; Eisenstein, G.; Arsenijevic, D.;

Threshold Temperature Dependence of a Quantum-Dot Laser Diode With and Without p-Doping

2009 / IEEE
By: Deppe, D.G.; Demir, A.; Ozgur, G.;

Temperature Characteristics of Gain Profiles in 1.3-$ \mu\hbox{m}\ p$-Doped and Undoped InAs/GaAs Quantum-Dot Lasers

2009 / IEEE
By: Rui Wang; Qi Cao; Han Xue Zhao; Chong Yang Liu; Soon Fatt Yoon; Cun Zhu Tong;

Epitaxial graphene on metal surfaces

2009 / IEEE / 978-981-08-3694-8
By: Busse, C.;

Thermal annealing effect on the Mg doped AlGaN/GaN superlattice

2009 / IEEE / 978-1-55752-877-3
By: Wang Baozhu; Wang, Xiaoliang; Wang, Xiaojun; Wu Ruihong; Wen Huanming; An Shengbiao;

Cross-Gain Modulation and Four-Wave Mixing for Wavelength Conversion in Undoped and p-Doped 1.3-$\mu\hbox{m}$ Quantum Dot Semiconductor Optical Amplifiers

2010 / IEEE
By: Meuer, C.; Bimberg, D.; Eisenstein, G.; Jungho Kim; Arsenijevic, D.; Fiol, G.; Schmeckebier, H.;

Electroluminescence Studies of Modulation p-Doped Quantum Dot Laser Structures

2010 / IEEE
By: Alexander, R.R.; Hopkinson, M.; Hasbullah, N.F.; Mowbray, D.J.; Badcock, T.J.; David, J.P.R.; Hogg, R.A.;

Effects of Annealing and p-Doping on the Two-State Competition in 1.3 �m InAs/GaAs Quantum-Dot Lasers

2011 / IEEE
By: Cao, Q.Q.; Wang, R.R.; Ngo, C.C.; Yoon, S.S.; Zhao, H.H.; Liu, C.C.;

Geometrical Effects on Characteristic Temperature and Modal Gain of InAs/GaAs Quantum-Dot Lasers

2011 / IEEE
By: Chun Yong Ngo; Han Xue Zhao; Soon Fatt Yoon; Rui Wang;