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Topic: Nonvolatile Memory

Results

A microcomputer-controlled multichannel programmable pattern generator

1987 / IEEE
By: Libsch, F.R.; Roy, A.; White, M.H.;

Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer

2011 / IEEE
By: Jang-Sik Lee; Jae Chul Park; Kim, D.M.; Dongsik Kong; Byeong-Hyeok Sohn; Jaeman Jang; Dae Hwan Kim; Il Hwan Cho;

A Statistical Model of Erratic Behaviors in Flash Memory Arrays

2011 / IEEE
By: Chimenton, A.; Olivo, P.; Zambelli, C.;

Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon

2011 / IEEE
By: Javey, A.; Chan, P.C.H.; Shimeng Yu; Hong-Yu Chen; Wong, H.-S.P.; Yi Wu; Takei, K.; Yang Chai;

Phase-Change Memory RESET Model Based on Detailed Cell Cooling Profile

2011 / IEEE
By: Kwong, K.C.; Mansun Chan; Mok, P.K.T.; Jin He;

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

2011 / IEEE
By: Ielmini, D.;

Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile Memory

2011 / IEEE
By: Asenov, A.; Erlebach, A.; Benvenuti, A.; Ghetti, A.; Roy, G.;

Polymer Solid-Electrolyte Switch Embedded on CMOS for Nonvolatile Crossbar Switch

2011 / IEEE
By: Banno, N.; Miyamura, M.; Sakamoto, T.; Okamoto, K.; Tada, M.; Hada, H.;

Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation

2011 / IEEE
By: Buscemi, F.; Piccinini, E.; Giovanardi, F.; Rudan, M.; Jacoboni, C.; Brunetti, R.;

Nonpersistent Errors Optimization in Spin-MOS Logic and Storage Circuitry

2011 / IEEE
By: Levitan, S.P.; Hai Li; Yaojun Zhang; Xiaobin Wang; Peiyuan Wang; Yiran Chen;

Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

2011 / IEEE
By: Carts, M.A.; Friendlich, M.; Chen, D.; Oldham, T.R.; LaBel, K.A.; Seidleck, C.M.;

Improved Resistive Switching of Textured ZnO Thin Films Grown on Ru Electrodes

2011 / IEEE
By: Jen-Chun Chou; Zi-Jheng Liu; Tri-Rung Yew; Jon-Yiew Gan; Shih-Yuan Wei;

Photoerasable Organic Nonvolatile Memory Devices Based on Hafnium Silicate Insulators

2011 / IEEE
By: Hsiao-Fen Chang; Fang-Chung Chen;

Novel Two-Bit-per-Cell Resistive-Switching Memory for Low-Cost Embedded Applications

2011 / IEEE
By: Tuo-Hung Hou; Chieh Lo; Shih-Chieh Wu;

Multiple-Step Relaxing-Precessional Magnetization Switching

2011 / IEEE
By: Hao-Hsuan Chen; Jui-Hang Chang; Chang, C.-R.;

Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories

2011 / IEEE
By: Bonanomi, M.; Visconti, A.; Paccagnella, A.; Bagatin, M.; Gerardin, S.; Beltrami, S.;

Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories

2011 / IEEE
By: Nguyen, D.N.; Irom, F.; Virtanen, A.; Harboe-Sorensen, R.;

Single Event Effects in 90-nm Phase Change Memories

2011 / IEEE
By: Gerardin, S.; Ferlet-Cavrois, V.; Vela, M.; Pellizzer, F.; Bagatin, M.; Bonanomi, M.; Visconti, A.; Paccagnella, A.;

Data Management and Layout for Shingled Magnetic Recording

2011 / IEEE
By: Schwarz, T.; Paris, J.; Miller, E.L.; Long, D.D.E.; Holliday, J.; Amer, A.;

A High-Density MTP Cell With Contact Coupling Gates by Pure CMOS Logic Process

2011 / IEEE
By: Chiu-Wang Lien; Cheng-Wei Tsai; Haw-Yun Wu; Chrong Jung Lin; Chih, Y.-D.;

Threshold Voltage Fluctuations in Localized Charge-Trapping Nonvolatile Memory Devices

2012 / IEEE
By: Janai, M.; Meng Chuan Lee;

Statistical Modeling of Secondary Path During Erase Operation in Phase Change Memories

2012 / IEEE
By: Olivo, P.; Chimenton, A.; Zambelli, C.;

The Shuttle Nanoelectromechanical Nonvolatile Memory

2012 / IEEE
By: Tsai, J.M.-L.; Vaddi, R.; Geng Li Chua; Pott, V.; Kim, T.T.;

Redox Molecules for a Resonant Tunneling Barrier in Nonvolatile Memory

2012 / IEEE
By: Tuo-Hung Hou; Rajwade, S.; Qianyin Xu; Shaw, T.; Kan, E.C.;

Reading Operation and Cell Scalability of Nonvolatile Schottky barrier Multibit Charge-Trapping Memory Cells

2012 / IEEE
By: Ji-Ting Liang; Chun-Hsing Shih; Yan-Xiang Luo;

A New 2T Contact Coupling Gate MTP Memory in Fully CMOS Compatible Process

2012 / IEEE
By: Chiu-Wang Lien; Chrong Jung Lin; Te-Liang Lee; Yue-Der Chih; Chen-Mei Huang; Cheng-Wei Tsai; Haw-Yun Wu;

Proposal for Switching Current Reduction Using Reference Layer With Tilted Magnetic Anisotropy in Magnetic Tunnel Junctions for Spin-Transfer Torque (STT) MRAM

2012 / IEEE
By: Mojumder, N.N.; Roy, K.;

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

2012 / IEEE
By: Wilcox, E.P.; Friendlich, M.R.; Oldham, T.R.; Castillo, J.; LaBel, K.A.; Eaton, P.H.; Mavis, D.G.; McMorrow, D.; Buchner, S.P.;

Radiation Studies of Spin-Transfer Torque Materials and Devices

2012 / IEEE
By: Mendenhall, M.H.; Chen, E.; Ong, A.; Mewes, T.; Schafer, S.; Chen, A.P.; Reed, R.A.; Shull, R.; Shu-Fan Cheng; McMarr, P.J.; Bussmann, K.; Hughes, H.;

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

2012 / IEEE
By: Wang, K.L.W.; Fleetwood, D.M.; En Xia Zhang; Cher Xuan Zhang; Alles, M.L.; Galatsis, K.; Sung Min Kim; Song, E.B.; Schrimpf, R.D.;

Radiation Tolerance of Magnetic Tunnel Junctions With MgO Tunnel Barriers

2012 / IEEE
By: Dhagat, P.; Jander, A.; Fanghui Ren; Nordman, C.;

Flexible Nano-Floating-Gate Memory With Channels of Enhancement-Mode Si Nanowires

2012 / IEEE
By: Myeongwon Lee; Youngin Jeon; Sangsig Kim; Taeho Moon;

Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure

2012 / IEEE
By: Oldham, T.R.; LaBel, K.A.; Friendlich, M.R.; Dakai Chen;

Self-Controlled Writing and Erasing in a Memristor Crossbar Memory

2011 / IEEE
By: Mazumder, P.; Ebong, I.E.;

Efficient logging of metadata using NVRAM for NAND flash based file system

2012 / IEEE
By: Chul Lee; Seung-Ho Lim;

On the Capacity and Programming of Flash Memories

2012 / IEEE
By: Hao Li; Anxiao Jiang; Bruck, J.;

Simultaneous 6-Gb/s Data and 10-mW Power Transmission Using Nested Clover Coils for Noncontact Memory Card

2012 / IEEE
By: Ishikuro, H.; Take, Y.; Aikawa, I.; Miura, N.; Yuxiang Yuan; Radecki, A.; Kuroda, T.;

Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation

2012 / IEEE
By: Bagatin, M.; Gerardin, S.; Ferlet-Cavrois, V.; Paccagnella, A.;

(Re)Designing Data-Centric Data Centers

2012 / IEEE
By: Jichuan Chang; Ranganathan, P.;

Free-p: A Practical End-to-End Nonvolatile Memory Protection Mechanism

2012 / IEEE
By: Jouppi, N.P.; Ranganathan, P.; Jichuan Chang; Muralimanohar, N.; Doe Hyun Yoon; Erez, M.;

A Compact CMOS Compatible Oxide Antifuse With Polysilicon Diode Driver

2012 / IEEE
By: Chan, M.; He, X.; Chen, Q.; Ma, Y.; Ye, Y.; Wu, W.; Liang, H.; Li, L.; Wang, R.; Lou, H.; Wang, C.; Chan, W. T.; He, J.;

A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application

2012 / IEEE
By: Yue Pan; Ru Huang; Yinglong Huang; Yangyuan Wang; Gengyu Yang; Yimao Cai; Lijie Zhang;

Improved Off-State Reliability of Nonvolatile Resistive Switch With Low Programming Voltage

2012 / IEEE
By: Hada, H.; Iguchi, N.; Okamoto, K.; Banno, N.; Miyamura, M.; Sakamoto, T.; Tada, M.;

DABC-NV: A buffer cache architecture for mobile systems with heterogeneous flash memories

2012 / IEEE
By: Park, J.; Bahn, H.; Lee, E.;

Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

2012 / IEEE
By: Corso, D.; Lombardo, S.A.; Finocchiaro, P.; Pace, C.; Principato, F.; Palumbo, F.; Roizin, Y.; Lisiansky, M.; Libertino, S.;

NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory

2012 / IEEE
By: Yuan Xie; Cong Xu; Xiangyu Dong; Jouppi, N.P.;

A Novel Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory

2012 / IEEE
By: Tien-Sheng Chao; Chi-Chang Wu; Wen-Luh Yang; Sheng-Hsien Liu;

Effects of a Load Resistor on Conducting Filament Characteristics and Unipolar Resistive Switching Behaviors in a Pt/NiO/Pt Structure

2012 / IEEE
By: Seung-Eon Ahn; Xiao Long Deng; Jinsik Choi; Jin-Soo Kim; Sahwan Hong; Sung-Oong Kang; Myung-Jae Lee; Inrok Hwang; Jieun Bae; Bae Ho Park;

High-Reliability Trigate Poly-Si Channel Flash Memory Cell With Si-Nanocrystal Embedded Charge-Trapping Layer

2012 / IEEE
By: Yung-Chun Wu; Hung-Bin Chen; Chun-Yen Chang; Chao-Kan Yang; Ji-Hong Chiang; Lun-Chun Chen;

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

2012 / IEEE
By: Yongbian Kuang; Yu Tang; Ru Huang; Yangyuan Wang; Lijie Zhang; Wei Ding;

Memristive Device Fundamentals and Modeling: Applications to Circuits and Systems Simulation

2012 / IEEE
By: Kyoung-Rok Cho; Kavehei, O.; Eshraghian, K.; Abbott, D.; Al-Sarawi, S.F.; Iqbal, A.; Chappell, J.M.;

Memristor Bridge Synapses

2012 / IEEE
By: Changju Yang; Sah, M.P.; Hyongsuk Kim; Chua, L.O.; Roska, T.;

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

2012 / IEEE
By: Tai-Fa Young; Bae-Heng Tseng; Der-Shin Gan; Ya-Hsiang Tai; Shih-Kun Liu; Hui-Chun Huang; Ya-Liang Yang; Min-Chen Chen; Guan-Ru Liu; Geng-Wei Chang; Siang-Lan Chuang; Yong-En Syu; Ting-Chang Chang; Kuan-Chang Chang; Tsung-Ming Tsai; Sze, S.M.; Hao Wang; Cong Ye; Ming-Jinn Tsai; Kai-Huang Chen;

Dual Read Method by Capacitance Coupling Effect for Mode-Disturbance-Free Operation in Channel-Recessed Multifunctional Memory

2012 / IEEE
By: Won-Ju Cho; Jin-Kwon Park;

Cu-Embedded AlN-Based Nonpolar Nonvolatile Resistive Switching Memory

2012 / IEEE
By: Fei Zeng; Cheng Song; Guangsheng Tang; Shuang Gao; Chao Chen; Feng Pan;

Polycrystalline-Si TFT TANOS Flash Memory Cell With Si Nanocrystals for High Program/Erase Speed and Good Retention

2012 / IEEE
By: Min-Feng Hung; Jiang-Hung Chen; Shun-Cheng Tien; Yung-Chun Wu;

Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory

2012 / IEEE
By: Dongsoo Lee; Bo Soo Kang; Myoung-Jae Lee; Seung-Eon Ahn; U-In Chung; Dong-Sik Kim; Chang-Jung Kim;

The Quantum Point-Contact Memristor

2012 / IEEE
By: Jimenez, D.; Miranda, E.; Sune, J.;

Bit-Cell Level Optimization for Non-volatile Memories Using Magnetic Tunnel Junctions and Spin-Transfer Torque Switching

2012 / IEEE
By: Choday, S.H.; Xuanyao Fong; Roy, K.;

Neutron-Induced Upsets in NAND Floating Gate Memories

2012 / IEEE
By: Visconti, A.; Paccagnella, A.; Ferrario, A.; Bagatin, M.; Beltrami, S.; Frost, C.D.; Gerardin, S.; Gorini, G.; Andreani, C.;

Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

2012 / IEEE
By: Ming-Jinn Tsai; Tien-Ko Wang; Jen-Wei Cheng; Yi-Chuen Jian; Kuei-Shu Chang-Liao; Li-Jung Liu;

Analysis of Complementary RRAM Switching

2012 / IEEE
By: Degraeve, R.; Fantini, A.; Leqi Zhang; Wouters, D.J.; Jurczak, M.; Goux, L.; Groeseneken, G.V.; Kar, G.S.; Govoreanu, B.; Chen, Y.Y.;

Understanding Overreset Transition in Phase-Change Memory Characteristics

2012 / IEEE
By: Calderoni, A.; Ielmini, D.; Rizzi, M.; Fantini, P.; Varesi, E.; Ferro, M.;

Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory

2012 / IEEE
By: Nardi, F.; Balatti, S.; Seol Choi; Ielmini, D.;

Low-Frequency Noise in SONOS-TFT With a Trigate Nanowire Structure Under Program/Erase Operation

2012 / IEEE
By: Min-Feng Hung; Yung-Chun Wu; Yong-Ren Jheng; Hsin-Hui Hu; Guo-Wei Huang;

Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit

2012 / IEEE
By: Jianlin Liu; Yi Shi; Huimei Zhou; Olmedo, M.; Jian-Guo Zheng; Bei Li; Jingjian Ren;

Design Optimization of Pulsed-Mode Electromechanical Nonvolatile Memory

2012 / IEEE
By: Lin, J.T.M.; Geng Li Chua; Vaddi, R.; Pott, V.; Kim, T.T.;

Design and Scalability of a Memory Array Utilizing Anchor-Free Nanoelectromechanical Nonvolatile Memory Device

2012 / IEEE
By: Vaddi, R.; Kim, T.T.; Lin, J.T.M.; Geng Li Chua; Pott, V.;

A Novel SONOS Memory With Recessed-Channel Poly-Si TFT via Excimer Laser Crystallization

2012 / IEEE
By: Chao-Lung Wang; Po-Yu Yang; Hsu-Hang Kuo; Chun-Chien Tsai; I-Che Lee; Huang-Chung Cheng;

Multibit Operation of Nanoelectromechanical Memory Cells

2012 / IEEE
By: Kwangseok Lee; Woo Young Choi;

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

2012 / IEEE
By: Jinfeng Kang; Xiaoyan Liu; Lifeng Liu; Bing Chen; Yihan Fu; Bin Gao; Yang Lu;

Electromechanical Diode Cell for Cross-Point Nonvolatile Memory Arrays

2012 / IEEE
By: Tsu-Jae King Liu; Hutin, L.; Jaeseok Jeon; Wookhyun Kwon;

Performance Enhancement of Silicon Nanowire Memory by Tunnel Oxynitride, Stacked Charge Trap Layer, and Mechanical Strain

2012 / IEEE
By: Huang, C.J.; Lee, S.C.; Chang, Y.T.; Lee, J.H.; Hsueh, C.Y.; Yang, C.H.;

Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory

2012 / IEEE
By: Doo-Hyun Kim; Dong Hua Li; Jung Hoon Lee; Seongjae Cho; Won Bo Shim; Gil Sung Lee; Jungdal Choi; Byung-Gook Park; Wandong Kim; Se Hwan Park; Yoon Kim;

Operation Voltage Control in Complementary Resistive Switches Using Heterodevice

2012 / IEEE
By: Seungjae Jung; Jubong Park; Daeseok Lee; Hyunsang Hwang; Eujun Cha; Godeuni Choi; Siddik, M.; Jiyong Woo; Seonghyun Kim; Joonmyoung Lee;

Analysis and Modeling of Internal State Variables for Dynamic Effects of Nonvolatile Memory Devices

2012 / IEEE
By: Wei Fei; Yang Shang; Hao Yu;

Embedded Analog Nonvolatile Memory With Bidirectional and Linear Programmability

2012 / IEEE
By: Hsin Chen; Chih-Cheng Lu; Kok-Choon Cheng; Yi-Da Wu;

Energy transformation in Z-pinch and plasma focus discharges with wire and wire-in-liner loads

2002 / IEEE / 978-0-7354-0107-5
By: Kubes, Pavel; Kravarik, Jozef; Tumanov, Victor I.; Shashkov, Andrey Y.; Korolev, Valery D.; Dan'ko, Sergey A.; Chernenko, Andrey S.; Blinov, Peter I.; Bakshaev, Yury L.; Klir, Daniel; Scholz, Marek; Paduch, Marian; Tomaszewski, Krzysztof; Karpinski, Leslaw;

Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

2009 / IEEE / 978-1-4577-0493-2
By: Virtanen, A.; Harboe-Sorensen, R.; Nguyen, D.N.; Irom, F.;

Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control

2011 / IEEE / 978-1-61284-175-5
By: Fukami, S.; Natsui, M.; Katsumata, A.; Matsunaga, S.; Hanyu, T.; Ohno, H.; Endoh, T.;

Study on nanoparticles embedded multilayer gate dielectric MOS non volatile memory devices

2011 / IEEE / 978-1-4577-0378-2
By: Sarkar, C.K.; Sengupta, A.;

Reliability characterizations of resistive switching devices using zinc oxide thin film

2011 / IEEE / 978-1-4577-0158-0
By: Chih-Chi Chen; Tai-Bor Wu; Wen-Yuan Chang; Peng-Wei Li; Fu-Chien Chiu; Chih-Yao Huang;

Fabrication and characterization of a junctionless SONOS transistor with poly-Si nanowire channels

2011 / IEEE / 978-1-4577-0378-2
By: Tzu-I Tsai; Tuan-Kai Su; Tiao-Yuan Huang; Horng-Chih Lin; Chun-Jung Su;

2011 / IEEE / 978-1-61284-175-5

Power management of hybrid DRAM/PRAM-based main memory

2011 / IEEE / 978-1-4503-0636-2
By: Sungjoo Yoo; Hyunsun Park; Sunggu Lee;

Designing simple indoor navigation system for UAVs

2011 / IEEE / 978-1-4577-0125-2
By: Patra, S.; Mohamed, M.K.; Lanzon, A.;

Green high performance storage class memory & NAND flash memory hybrid SSD system

2011 / IEEE / 978-1-61284-660-6
By: Takeuchi, K.;

Non-volatile graphene channel memory (NVGM) for flexible electronics and 3D multi-stack ultra-high-density data storages

2011 / IEEE / 978-1-4244-9949-6
By: Hankyu Seok; Seo, D.H.; Song, E.B.; Sunae Seo; Sung Min Kim; Wang, K.L.;

3D approaches for non-volatile memory

2011 / IEEE / 978-1-4244-9949-6
By: Jungdal Choi; Kwang Soo Seol;

Investigation of reliability issue in tunneling and inter-poly dielectrics in floating gate NAND flash memory cell strings

2011 / IEEE / 978-1-4577-0378-2
By: Jong-Ho Lee; Sung-Min Joe;

Advanced failure analysis of memory devices

2011 / IEEE / 978-1-4577-0158-0
By: Li, S.X.;

FRAM based TMR (triple modular redundancy) for fault tolerance implementation

2011 / IEEE / 978-1-4577-1556-3
By: Siddiqui, K.S.; Baig, M.A.;

Study of C4F8 gas for etch process in slow erase failure of flash memory devices

2011 / IEEE / 978-1-4577-0158-0
By: Sang kwon Kim; Ki chae Yoon; Yeong-sil Kim; Sang il Hwang; Young sun Ko;

Bipolar resistive switching in Al/ZrO2/Pt device fabricated at room temperature

2011 / IEEE / 978-1-4577-0378-2
By: Chun-Chieh Lin; Chu-Hsuan Lin; Huei-Bo Lin; Yi-Peng Chang;

MN-GEMS: A Timing-Aware Simulator for a Cloud Node with Manycore, DRAM, and Non-volatile Memories

2011 / IEEE / 978-1-4577-0836-7
By: Kyu Ho Park; Ki-Woong Park; Woomin Hwang;

Unpowered event detection with an autonomous ferroelectric capacitor circuit

2011 / IEEE / 978-1-4577-1163-3
By: Evans, J.; Smith, S.; Howard, B.;

High throughput exploration of Data Vortex network

2011 / IEEE / 978-986-02-8974-9
By: Qimin Yang;

Variable-level cells for nonvolatile memories

2011 / IEEE / 978-1-4577-0595-3
By: Anxiao Jiang; Bruck, J.; Hongchao Zhou;

Error-correcting schemes with dynamic thresholds in nonvolatile memories

2011 / IEEE / 978-1-4577-0595-3
By: Anxiao Jiang; Hongchao Zhou; Bruck, J.;

NeoSilicon based nanoelectromechanical information devices

2011 / IEEE / 978-83-932075-2-7
By: Oda, S.;

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