Your Search Results

Use materials about this topic in your textbook!

AcademicPub holds over eight million pieces of educational content - such as case studies and journal articles - for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Topic: Nonionizing Energy Loss

Results

Correlation of Telemetered Solar Array Data With Particle Detector Data On GPS Spacecraft
2011 / IEEE
By: Jackson, E.M.; Messenger, S.R.; Reed, B.; Kippen, R.M.; Warner, J.H.; Friedel, R.W.; Yue Chen; Cayton, T.E.; Walters, R.J.;
Equivalent Displacement Damage Dose for On-Orbit Space Applications
2012 / IEEE
By: Inguimbert, C.; Messenger, S.;
Single Particle Displacement Damage in Silicon
2012 / IEEE
By: King, M.P.; Hooten, N.C.; Schrimpf, R.D.; Reed, R.A.; Mendenhall, M.H.; Weller, R.A.; Auden, E.C.;
A deep level transient spectroscopy study of electron and proton irradiated p+n GaAs diodes
2009 / IEEE / 978-1-4577-0493-2
By: Messenger, S.R.; Warner, J.H.; Brenner, M.R.; Ringel, S.A.; Walters, R.J.;
High energy electron induced displacement damage in silicon
1988 / IEEE
By: Burke, E.A.; Marshall, P.W.; Dale, C.J.; Wolicki, E.A.; Summers, G.P.;
Electron and proton radiation effects in the high temperature superconductor YBa/sub 2/Cu/sub 3/O/sub 7- delta /
1989 / IEEE
By: Summers, G.P.; Tesmer, J.R.; Nastasi, M.; Burke, E.A.; Stauss, G.H.; Maisch, W.G.; Chrisey, D.B.;
Proton, neutron and electron-induced displacement damage in germanium
1989 / IEEE
By: Burke, E.A.; Wolicki, E.A.; Summers, G.P.; Dale, C.J.; Marshall, P.W.;
Space radiation effects in InP solar cells
1991 / IEEE
By: Burke, E.A.; Summers, G.P.; Messenger, S.R.; Walters, R.J.; Keavney, C.J.;
Proton and electron irradiation of MOCVD InP solar cells: Experimental results and radiation modeling
1991 / IEEE / 0-87942-636-5
By: Summers, G.P.; Messenger, S.R.; Walters, R.J.; Keavney, C.J.; Burke, E.A.;
Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus
1992 / IEEE
By: Dale, C.J.; Marshall, P.W.; Burke, E.A.;
Displacement damage effects in mixed particle environments for shielded spacecraft CCDs
1993 / IEEE
By: Shamey, L.; Cummings, B.; Marshall, P.; Dale, C.; Holland, A.;
Damage correlations in semiconductors exposed to gamma, electron and proton radiations
1993 / IEEE
By: Shapiro, P.; Burke, E.A.; Summers, G.P.; Walters, R.J.; Messenger, S.R.;
Co/sup 60/ gamma ray and electron displacement damage studies of semiconductors
1994 / IEEE
By: Blatchley, C.C.; Summers, G.P.; Xapsos, M.A.; Shapiro, P.; Messenger, S.R.; Burke, E.A.; Colerico, C.W.;
Dark current induced in large CCD arrays by proton-induced elastic reactions and single to multiple-event spallation reactions
1994 / IEEE
By: Larson, S.; McNulty, P.J.; Chen, L.; Lee, T.; Miller, T.L.; Thompson, D.A.;
Further measurements of random telegraph signals in proton irradiated CCDs
1995 / IEEE
By: Hopkins, I.H.; Hopkinson, G.R.;
The energy dependence of lifetime damage constants in GaAs LEDs for 1-500 MeV protons
1995 / IEEE
By: Hinrichsen, P.F.; Houdayer, A.J.; Barry, A.L.; Vincent, J.; Letourneau, W.G.;
Proton damage on InGaAs solar cells having a 3 /spl mu/m InP window layer
1996 / IEEE / 0-7803-3283-0
By: Cotal, H.L.; Messenger, S.R.; Summers, G.P.; Walters, R.J.;
Radiation source dependence of degradation and recovery of irradiated Si/sub 1-x/Ge/sub x/ epitaxial devices
1995 / IEEE / 0-7803-3093-5
By: Takami, Y.; Vanhellemont, J.; Ohyama, H.; Caymax, M.; Poortmans, J.; Sunaga, H.; Hayama, K.;
Radiation effects of 7.5-114 MeV protons incident on SiC LEDs
1995 / IEEE / 0-7803-3093-5
By: Barry, A.L.; Hinrichsen, P.F.; Houdayer, A.J.;
A new approach to damage prediction for solar cells exposed to different radiations
1994 / IEEE / 0-7803-1460-3
By: Burke, E.A.; Xapsos, M.A.; Walters, R.J.; Summers, G.P.; Statler, R.L.; Shapiro, P.; Messenger, S.R.;
Degradation and recovery of In/sub 0.53/Ga/sub 0.47/As photodiodes by 1-MeV fast neutrons
1996 / IEEE
By: Takami, Y.; Vanhellemont, J.; Ohyama, H.; Sunaga, H.; Kohiki, S.; Hakata, T.; Kudou, T.; Hayama, K.;
Degradation and recovery of proton irradiated Si/sub 1-x/Ge/sub x/ epitaxial devices
1996 / IEEE
By: Vanhellemont, J.; Ohyama, H.; Caymax, M.; Poortmans, J.; Hayama, K.; Uwatoko, Y.; Nashiyama, I.; Sunaga, H.; Takami, Y.;
Time-resolved spectroscopy of irradiated n-GaAs
1997 / IEEE
By: Khanna, S.M.; Morris, D.; Carlone, C.; Parenteau, M.;
Factors determining the damage coefficients and the low-frequency noise in MeV proton-irradiated silicon diodes
1998 / IEEE
By: Simoen, E.; Ohyama, H.; Claeys, C.;
Radiation source dependence of degradation and recovery of irradiated In/sub 0.53/Ga/sub 0.47/As PIN photodiodes
1997 / IEEE / 0-7803-4071-X
By: Simoen, E.; Ohyama, H.; Sunaga, H.; Kudou, T.; Takami, Y.; Claeys, C.;
Carrier removal in p-type InP
1998 / IEEE
By: Xapsos, M.A.; Walters, R.J.; Messenger, S.R.; Burke, E.A.; Summers, G.P.;
Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs
1998 / IEEE
By: Claeys, C.; Kuroda, S.; Simoen, E.; Ohyama, H.; Sunaga, H.; Hakata, T.; Takami, Y.;
High energy electron testing of silicon and GaAs/Ge solar cells
1999 / IEEE / 0-7803-5660-8
By: O'Quinn, C.; Miller, K.B.;
Nonionizing energy loss (NIEL) for heavy ions
1999 / IEEE
By: Messenger, S.R.; Weaver, B.D.; Jackson, E.M.; Walters, R.J.; Xapsos, M.A.; Summers, G.P.; Burke, E.A.;
Energy dependence of proton damage in AlGaAs light-emitting diodes
2000 / IEEE
By: LaBel, K.A.; Barth, J.L.; Loc Xuan Nguyen; Kim, H.S.; Reed, R.A.; Ladbury, R.L.; Marshall, C.J.; Marshall, P.W.;
1-15 MeV proton and alpha particle radiation effects on GaAs quantum well light emitting diodes [and QWIPs]
2000 / IEEE
By: Gao, M.; Liu, H.C.; Estan, D.; Khanna, S.M.; SpringThorpe, A.J.; Buchanan, M.;
Analysis and modeling of the radiation response of multijunction space solar cells
2000 / IEEE / 0-7803-5772-8
By: Messenger, S.R.; Summers, G.P.; Walters, R.J.;
Correlation of proton radiation damage in InGaAs-GaAs quantum-well light-emitting diodes
2001 / IEEE
By: Burke, E.A.; Summers, G.P.; Messenger, S.R.; Walters, R.J.; Carlone, C.; Houdayer, A.; Khanna, S.M.; Buchanan, M.; SpringThorpe, A.J.; Mae Gao; Hui Chun Liu; Erhardt, L.S.; Estan, D.;
Correlation between nonionizing energy loss and the offset voltage shift in InP-InGaAs heterojunction bipolar transistors
2001 / IEEE
By: Klein, A.; Subramanian, S.; Shatalov, A.;
Analysis of the proton-induced permanent degradation in an optocoupler
2002 / IEEE
By: Ecoffet, R.; Barde, S.; Saigne, F.; Dusseau, L.; Mion, O.; Gasiot, J.; Germanicus, R.; Fesquet, J.; Calvel, R.;
Consistency of bulk damage factor and NIEL for electrons, protons, and heavy ions in Si CCDs
2002 / IEEE
By: Hirao, T.; Shindou, H.; Kuboyama, S.; Matsuda, S.;
Application of displacement damage dose analysis to low-energy protons on silicon devices
2002 / IEEE
By: Summers, G.P.; Burke, E.A.; Messenger, S.R.; Walters, R.J.;
Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors
2002 / IEEE
By: Mishra, U.K.; McDonald, K.; Weller, R.A.; Galloway, K.F.; Schrimpf, R.D.; Dettmer, R.W.; Barnaby, H.J.; Choi, B.K.; Xinwen Hu; Fleetwood, D.M.;
Neutron, proton, and electron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors
2003 / IEEE
By: Subramanian, S.; Zwicknagl, P.; Li, C.; Vuppala, S.;
NIEL for heavy ions: an analytical approach
2003 / IEEE
By: Insoo Jun; Walters, R.J.; Summers, G.P.; Xapsos, M.A.; Burke, E.A.; Messenger, S.R.; Jordan, T.;
Comparison of CCD damage due to 10- and 60-MeV protons
2003 / IEEE
By: Mohammadzadeh, A.; Hopkinson, G.R.;
The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors
2004 / IEEE
By: Wilkins, R.; Choi, B.K.; Xinwen Hu; Dettmer, R.W.; Mishra, U.K.; Barnaby, H.J.; Shojah-Ardalan, S.; Sungchul Lee; Schrimpf, R.D.; Fleetwood, D.M.;
High energy proton degradation in GaAs solar cells
2003 / IEEE / 4-9901816-0-3
By: Warner, J.H.; Summers, G.P.; Messenger, S.R.; Walters, R.J.;
The Simulation of damage tracks in silicon
2004 / IEEE
By: Messenger, S.R.; Walters, R.J.; Summers, G.P.; Xapsos, M.A.; Burke, E.A.;
Lithium ion irradiation of standard and oxygenated silicon diodes
2004 / IEEE
By: Litovchenko, A.; Kaminski, A.; Bisello, D.; Giubilato, P.; Betta, G.D.; Lozano, M.; Candelori, A.; Wyss, J.; Ullan, M.; Rando, R.; Petrie, J.R.;
High-energy proton irradiation effects in GaAs devices
2004 / IEEE
By: Khanna, S.M.; Houdayer, A.; Erhardt, L.S.; Estan, D.; Warner, J.H.; Summers, G.P.; Messenger, S.R.; Walters, R.J.;
Radiation damage effects on CMS sensors quality assurance and irradiation tests
2004 / IEEE
By: Furgeri, A.J.; de Boer, W.; Forton, E.; Freudenstein, S.; Assouak, S.; Hartmann, F.;
Limits to the application of NIEL for damage correlation
2004 / IEEE
By: Messenger, S.R.; Walters, R.J.; Summers, G.P.; Burke, E.A.;
NIEL calculations for high-energy heavy ions
2004 / IEEE
By: Burke, E.A.; Xapsos, M.A.; Jun, I.; Wilson, J.W.; Townsend, L.W.; Badavi, F.F.;
A screened Coulomb scattering module for displacement damage computations in Geant4
2004 / IEEE
By: Weller, R.A.; Fleetwood, D.M.; Mendenhall, M.H.;
Criteria for identifying radiation resistant semiconductor materials
2005 / IEEE
By: Warner, J.H.; Walters, R.J.; Summers, G.P.; Burke, E.A.; Messenger, S.R.;
Displacement damage correlation of proton and silicon ion radiation in GaAs
2005 / IEEE
By: Walters, R.J.; Messenger, S.R.; Warner, J.H.; Summers, G.P.;
Correlation of Electron Radiation Induced-Damage in GaAs Solar Cells
2006 / IEEE
By: Smith, M.A.; Wilt, D.M.; Lorentzen, J.R.; Summers, G.P.; Walters, R.J.; Messenger, S.R.; Warner, J.H.;
New Partition Factor Calculations for Evaluating the Damage of Low Energy Ions in Silicon
2006 / IEEE
By: Akkerman, A.; Barak, J.;
Atomic-Scale Mechanisms for Low-NIEL Dopant-Type Dependent Damage in Si
2006 / IEEE
By: Caussanel, M.; Tsetseris, L.; Beck, M.J.; Pantelides, S.T.; Fleetwood, D.M.; Schrimpf, R.D.;
Effect of Omnidirectional Proton Irradiation On Shielded Solar Cells
2006 / IEEE
By: Messenger, S.R.; Morton, T.L.; Summers, G.P.; Warner, J.H.; Walters, R.J.; Burke, E.A.;
A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices
2006 / IEEE
By: Srour, J.R.; Palko, J.W.;
Lateral Diffusion Length Changes in HgCdTe Detectors in a Proton Environment
2007 / IEEE
By: Marshall, P.W.; Hubbs, J.E.; Anderson, A.A.; Dole, G.A.; Marshall, C.J.; Garcia, J.P.; Maestas, D.; Gramer, M.E.;
Amorphous Inclusions in Irradiated Silicon and Their Effects on Material and Device Properties
2008 / IEEE
By: Srour, J.R.; Palko, J.W.;
Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology
2009 / IEEE
By: Goiffon, V.; Saint-Pe, O.; Rolland, G.; Bernard, F.; Magnan, P.; Hopkinson, G.R.;
Defect production in silicon and germanium by low temperature irradiation
2009 / IEEE / 978-1-4244-4413-7
By: Lazanu, I.; Lazanu, S.; Stavarache, I.; Lepadatu, A.;
Dual detector system for measuring out-of-field neutron dose in proton therapy
2009 / IEEE / 978-1-4244-3961-4
By: Petaseca, M.; Lerch, M.L.; Schulte, R.W.; Clasie, B.; Wroe, A.; Perevertaylo, V.; Reinhard, M.I.; Dowdell, S.J.; Ziebell, A.L.; Rosenfeld, A.B.; Anokhin, I.E.;
A Deep Level Transient Spectroscopy Study of Electron and Proton Irradiated ${\hbox {p}} ^{+} {\hbox {n}}$ GaAs Diodes
2010 / IEEE
By: Cress, C.D.; Warner, J.H.; Jeongho Park; Ringel, S.A.; Walters, R.J.; Messenger, S.R.;
Monte Carlo Analyses of the NEO Beam Electron Beam Facility for Space Solar Cell Radiation Qualification
2010 / IEEE
By: Walters, R.J.; Uribe, R.; Warner, J.H.; Messenger, S.R.;
NIEL Scaling: Comparison With Measured Defect Introduction Rate in Silicon
2011 / IEEE
By: Nuns, T.; Inguimbert, C.; Arnolda, P.; Boatella-Polo, C.;

Return To Top