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Topic: Mosfet

Results

Application of MOSFET's in the temperature compensation of DC amplifiers

1987 / IEEE
By: Rizkalla, M.E.; Hanna, N.N.;

Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices

2011 / IEEE
By: Olsen, S.H.; Escobedo-Cousin, E.; Kapoor, R.; Bull, S.J.;

Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs

2011 / IEEE
By: Qiumin Xu; Jibin Zou; Yangyuan Wang; Ru Huang; Runsheng Wang; Jieying Luo;

Shear Piezoresistance in MOSFET Devices Under General Operating Conditions

2011 / IEEE
By: Sbierski, B.; Paul, O.; Gieschke, P.;

Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs

2011 / IEEE
By: Biel, B.; Godoy, A.; Ruiz, F.J.G.; Tienda-Luna, I.M.; Gamiz, F.;

Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials

2011 / IEEE
By: Kotlyar, R.; Roy, A.; Mudanai, S.; Stettler, M.; Rakshit, T.;

Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs

2011 / IEEE
By: Chen, W.P.-N.; Pin Su; Kuo, J.J.-Y.;

Self-Annealing Effect of Tensile Liner on Thick-Tinv PMOS

2011 / IEEE
By: Jie Chen; Qintao Zhang; Sherony, M.J.;

An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique

2011 / IEEE
By: Sungho Kim; Yang-Kyu Choi; Dong-Il Moon; Sung-Jin Choi;

Compact Modeling of Partially Depleted Silicon-on-Insulator Drain-Extended MOSFET (DEMOSFET) Including High-Voltage and Floating-Body Effects

2011 / IEEE
By: Agarwal, T.K.; Kumar, M.J.; Subramanian, V.; Trivedi, A.R.;

An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs

2011 / IEEE
By: Assenmacher, J.; Bucher, M.; Bazigos, A.; Papananos, Y.; Grabinski, W.; Decker, S.;

Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET

2011 / IEEE
By: Scheer, P.; Puget, S.; Bertrand, G.; Valentin, R.; Raynaud, C.; Jaouen, H.; Juge, A.;

Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs

2011 / IEEE
By: Mansun Chan; Jin He; Haijun Lou; Lining Zhang;

Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback, and Self-Heating

2011 / IEEE
By: Chakravorty, A.; DasGupta, N.; DasGupta, A.; Radhakrishna, U.;

TiN Metal Gate Electrode Thickness Effect on BTI and Dielectric Breakdown in HfSiON-Based MOSFETs

2011 / IEEE
By: Ya-Chin King; Chien-Liang Chen;

Tri-Mode Independent-Gate FinFETs for Dynamic Voltage/Frequency Scalable 6T SRAMs

2011 / IEEE
By: Gupta, S.K.; Roy, K.; Park, S.P.;

Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

2011 / IEEE
By: Feldman, L.C.; Williams, J.R.; Xingguang Zhu; Ahyi, A.C.; Rozen, J.;

A Physical Model for Work-Function Variation in Ultra-Short Channel Metal-Gate MOSFETs

2011 / IEEE
By: Banerjee, K.; Singh, N.; Chuan Xu; Rasouli, S.H.;

Analysis and Design of Hanle-Effect Spin Transistors at 300 K

2011 / IEEE
By: Sugahara, S.; Takamura, Y.;

In-Situ Sensor-Matrix to Determine Package-Induced Stresses

2011 / IEEE
By: Glavanovics, M.; Aichinger, T.; Djelassi, C.; Kaltenbacher, M.;

Magnetic Content Addressable Memory Design for Wide Array Structure

2011 / IEEE
By: Weizhong Wang;

Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs

2011 / IEEE
By: Moroz, V.; Xin Sun; Tsu-Jae King Liu; Changhwan Shin; Damrongplasit, N.;

Transistor wars

2011 / IEEE
By: Schuegraf, K.; Ahmed, K.;

Drain-Dependence of Tunnel Field-Effect Transistor Characteristics: The Role of the Channel

2011 / IEEE
By: Mallik, A.; Chattopadhyay, A.;

Asymmetrically Doped FinFETs for Low-Power Robust SRAMs

2011 / IEEE
By: Moradi, F.; Roy, K.; Mahmoodi, H.; Wisland, D.T.; Panagopoulos, G.; Gupta, S.K.;

Electrical Performance Optimization of Nanoscale Double-Gate MOSFETs Using Multiobjective Genetic Algorithms

2011 / IEEE
By: Djeffal, F.; Bendib, T.;

Improvement in off-State Leakage Current of n-Channel SOS MOSFETs by Hydrogen Annealing of the SOS Film

2011 / IEEE
By: Imthurn, G.; Domyo, H.; Yew-Tong Yeow; Rakic, A.D.; Miscione, A.M.; Tran Ho;

In-Depth Study of Quantum Effects in SOI DGMOSFETs for Different Crystallographic Orientations

2011 / IEEE
By: Gamiz, F.; Aranda, J.B.R.; Balaguer, M.;

Analysis and Design Method for High-Frequency Self-Oscillating Electronic Ballasts

2011 / IEEE
By: Flores-Garcia, E.; Hernandez-Gonzalez, L.; Juarez, M.A.; Vela-Valdes, L.G.; Ponce-Silva, M.;

A High-Efficiency Digitally Controlled RGB Driver for LED Pixels

2011 / IEEE
By: Ang, S.S.; Hasan, J.;

TID in a Switched-Capacitor FPAA: Degradation and Partial Inactivity Windows Due to Compensating Effects in MOS Transistors

2011 / IEEE
By: Cardoso, G.S.; Vaz, R.G.; Balen, T.R.; Lubaszewski, M.S.; Goncalez, O.L.;

Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

2011 / IEEE
By: Schrimpf, R.D.; Reed, R.A.; Hooten, N.; Pate, N.D.; Zhang, E.X.; El-Mamouni, F.; Vizkelethy, G.; Linten, D.; Griffoni, A.; Claeys, C.; Simoen, E.; Warner, J.; McMorrow, D.; Galloway, K.F.;

Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance

2011 / IEEE
By: Madan, H.; Ali, A.; Datta, S.; Lindemuth, J.; Agrawal, A.; Bennett, B.R.; Boos, J.B.; Misra, R.; Ramirez, I.;

Variability of Inversion-Mode and Junctionless FinFETs due to Line Edge Roughness

2011 / IEEE
By: Leung, G.; Chi On Chui;

RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

2011 / IEEE
By: Johansson, S.; Lind, E.; Wernersson, L.; Berg, M.; Borg, B.M.; Ghalamestani, S.G.; Egard, M.;

Graphene: Its Fundamentals to Future Applications

2011 / IEEE
By: Gaskill, D.K.; Jeong-Sun Moon;

150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

2011 / IEEE
By: Gloria, D.; Lepilliet, S.; Tagro, Y.; Danneville, F.; Poulain, L.; Raynaud, C.; Lesecq, M.; Dubois, E.; Lecavelier des Etangs-Levallois, A.; Troadec, D.;

A 60 GHz CMOS Power Amplifier With Built-in Pre-Distortion Linearizer

2011 / IEEE
By: Hong-Yuan Yang; Chung-Han Wu; Jeng-Han Tsai; Tian-Wei Huang;

Gate-All-Around Junctionless Nanowire MOSFET With Improved Low-Frequency Noise Behavior

2011 / IEEE
By: Jianmin Miao; Singh, N.; Singh, P.; Dim-Lee Kwong; Woo-Tae Park;

Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation

2011 / IEEE
By: Ohyun Kim; Yoon-Ha Jeong; Chan-Hoon Park; Fleetwood, D.M.; Jae-Joon Song; Schrimpf, R.D.; En Xia Zhang; Bo Kyoung Choi;

Differential Body-Factor Technique for Characterization of Interface Traps in MOSFETs

2011 / IEEE
By: Daeyoun Yun; Dong Myong Kim; Dae Hwan Kim; Jieun Lee; Jaeman Jang; Euiyeon Hong; Ja Sun Shin; Hagyoul Bae; Minkyung Bae;

Cryogenic Operation of Junctionless Nanowire Transistors

2011 / IEEE
By: Doria, R.T.; Trevisoli, R.D.; Pavanello, M.A.; de Souza, M.; Colinge, J.;

Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications

2011 / IEEE
By: Gaobo Xu; Qiuxia Xu; Junfeng Li; Xiaofeng Duan; Yuan Yao; Qingqing Liang;

A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

2011 / IEEE
By: Jiexin Luo; Jing Chen; Xi Wang; Yaojun Dong; Tao Yu; Zhan Chai; Qingqing Wu;

Pocket Implant-Dependent Channel Mobility in Advanced p-MOSFETs With Strain Engineering

2011 / IEEE
By: Youn Sung Choi; Baldwin, G.; Ekbote, S.;

Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation

2011 / IEEE
By: Simoen, E.; Martino, J.A.; de Andrade, M.G.C.; Claeys, C.;

Increased Deep-Level Hole Trapping by Combined Negative-Bias Temperature and Channel Hot-Hole Stress

2011 / IEEE
By: Leong, K.C.; Ang, D.S.; Ho, T.J.J.;

Applicability of Macroscopic Transport Models to Decananometer MOSFETs

2012 / IEEE
By: Esseni, D.; Cervenka, J.; Vasicek, M.; Grasser, T.; Palestri, P.;

A Physical Understanding of RF Noise in Bulk nMOSFETs With Channel Lengths in the Nanometer Regime

2012 / IEEE
By: Machala, C.; Hou, F.; Martin, S.; Shichijo, H.; Trombley, D.E.; Patalay, P.R.; Jindal, R.P.; Mahajan, V.M.;

Low on-Resistance SOI Dual-Trench-Gate MOSFET

2012 / IEEE
By: Jie Fan; Wang, Q.; Wang, P.; Zhou, K.; Jiang, Y.H.; Yao, G.L.; Wang, Y.G.; Lei, T.F.; Xiaorong Luo; Zhang, Z.Y.; Udrea, F.; Zhaoji Li; Bo Zhang; Ge, R.;

Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs

2012 / IEEE
By: Wei Dong Zhang; Jian Fu Zhang; Zhigang Ji; Groeseneken, G.; De Gendt, S.; Kaczer, B.;

EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

2012 / IEEE
By: Hattori, T.; Natori, K.; Sugii, N.; Tsutsui, K.; Nishiyama, A.; Iwai, H.; Ahmet, P.; Kakushima, K.; Yeonghun Lee; Kawanago, T.;

Variability Analysis of Scaled Crystal Channel and Poly-Si Channel FinFETs

2012 / IEEE
By: O'uchi, S.; Endo, K.; Matsukawa, T.; Kamei, T.; Yongxun Liu; Masahara, M.; Tsukada, J.; Sakamoto, K.; Ogura, A.; Hayashida, T.; Ishikawa, Y.; Yamauchi, H.;

Semiclassical Monte Carlo Analysis of Graphene FETs

2012 / IEEE
By: Banerjee, S.K.; Register, L.F.; David, J.K.;

Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance

2012 / IEEE
By: Migita, S.; Morita, Y.; Matsukawa, T.; Mizubayashi, W.; O'uchi, S.; Liu, Y.; Endo, K.; Hayashida, T.; Masahara, M.; Ogura, A.; Yamauchi, H.; Ishikawa, Y.; Tsukada, J.; Kamei, T.; Kosemura, D.; Hashiguchi, H.; Ota, H.;

Virtual-Source-Based Self-Consistent Current and Charge FET Models: From Ballistic to Drift-Diffusion Velocity-Saturation Operation

2012 / IEEE
By: Lan Wei; Antoniadis, D.; Mysore, O.;

Physical Insight Toward Heat Transport and an Improved Electrothermal Modeling Framework for FinFET Architectures

2012 / IEEE
By: Agrawal, M.; Shrivastava, M.; Rao, V.R.; Sharma, D.K.; Schulz, T.; Gossner, H.; Mahajan, S.;

A Novel 1T-1D DRAM Cell for Embedded Application

2012 / IEEE
By: Cheng-Wei Cao; Zhang, D.W.; Peng-Fei Wang; Xing, C.; Qing-Qing Sun; Xi Lin; Song-Gan Zang;

On the Enhancement of the Drain Current in Indium-Rich InGaAs Surface-Channel MOSFETs

2012 / IEEE
By: Siddiqui, M.R.; Golam Sarwar, A.T.M.; Haque, A.; Satter, M.M.;

Tunnel Field-Effect Transistors for Analog/Mixed-Signal System-on-Chip Applications

2012 / IEEE
By: Chattopadhyay, A.; Mallik, A.;

A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry

2012 / IEEE
By: Anghel, C.; Kashyap, R.; Jandhyala, S.; Mahapatra, S.;

The Study of the Electrothermal Property of High-Voltage Drain-Extended MOSFETs

2012 / IEEE
By: Hsiao-Chin Tuan; Ruey-Hsin Liou; Fei-Yun Chen; Chih-Fang Huang; Chen-Liang Chu; Jeng Gong; Chung-Yu Hung; Chih-Min Hu;

Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations

2012 / IEEE
By: Gildenblat, G.; Zeqin Zhu; Ik-Sung Lim; McAndrew, C.C.;

Radiation Effects in Si-NW GAA FET and CMOS Inverter: A TCAD Simulation Study

2012 / IEEE
By: Saxena, A.K.; Manhas, S.K.; Maheshwaram, S.; Rathod, S.S.; Kaushal, G.; Dasgupta, S.;

Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory Cells

2012 / IEEE
By: Claeys, C.; Collaert, N.; Aoulaiche, M.; de Andrade, M.G.C.; Simoen, E.;

Comprehensive and Accurate Parasitic Capacitance Models for Two- and Three-Dimensional CMOS Device Structures

2012 / IEEE
By: Boeuf, F.; Ghibaudo, G.; Lacord, J.;

Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs

2012 / IEEE
By: Ghibaudo, G.; Chabane-Sari, N.; Pala, M.G.; Bekaddour, A.;

FPGA-Controlled All-Solid-State Nanosecond Pulse Generator for Biological Applications

2012 / IEEE
By: Caixin Sun; Yan Mi; Shoulong Dong; Fei Guo; Ximing Zhang; Chenguo Yao;

Compact Capacitance Model of Undoped or Lightly Doped Ultra-Scaled Triple-Gate FinFETs

2012 / IEEE
By: Dimitriadis, C.A.; Tassis, D.H.; Tsormpatzoglou, A.; Fasarakis, N.; Pappas, I.; Ghibaudo, G.; Bucher, M.; Papathanasiou, K.;

Assessment of Electron Mobility in Ultrathin-Body InGaAs-on-Insulator MOSFETs Using Physics-Based Modeling

2012 / IEEE
By: Suligoj, T.; Grgec, D.; Jovanovic, V.; Poljak, M.;

Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold

2012 / IEEE
By: Jun Xu; Qian Xie; Yuan Taur;

Effectiveness of Stressors in Aggressively Scaled FinFETs

2012 / IEEE
By: Ho, B.; Nuo Xu; Liu, T.-J.K.; Moroz, V.; Munkang Choi;

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

2012 / IEEE
By: Lattanzio, L.; Ionescu, A.M.; De Michielis, L.; Dagtekin, N.;

N-Channel Dual-Workfunction-Gate MOSFET for Analog Circuit Applications

2012 / IEEE
By: Yeong-Seuk Kim; Ki-Ju Baek; Kee-Yeol Na;

Denser and More Stable SRAM Using FinFETs With Multiple Fin Heights

2012 / IEEE
By: Chenming Hu; Sachid, A.B.;

Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress

2012 / IEEE
By: Hang Hu; Hong Liao; Hong Wang; Hao Su;

On the Contribution of Bulk Defects on Charge Pumping Current

2012 / IEEE
By: Southwick, R.G.; Ryan, J.T.; Suehle, J.S.; Cheung, K.P.; Campbell, J.P.;

Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices

2012 / IEEE
By: Grubbs, M.E.; Deal, M.; Hoffmann, T.; Ragnarsson, L.; Mitard, J.; Jing Li; Nishi, Y.; Xiao Zhang; Clemens, B.M.; Magyari-Kope, B.;

Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

2012 / IEEE
By: de Souza, M.; Doria, R.T.; Trevisoli, R.D.; Pavanello, M.A.; Ferain, I.; Das, S.;

Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET

2012 / IEEE
By: Abraham, A.; Jandhyala, S.; Mahapatra, S.; Anghel, C.;

Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

2012 / IEEE
By: Conzatti, F.; Selmi, L.; Bano, E.; Esseni, D.; Pala, M.G.;

Performance Breakthrough in Gate-All-Around Nanowire n- and p-Type MOSFETs Fabricated on Bulk Silicon Substrate

2012 / IEEE
By: Yi Song; Chao Zhao; Qingqing Liang; Jiebin Niu; Huajie Zhou; Jun Luo; Qiuxia Xu;

Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs

2012 / IEEE
By: Li Cheng Chang; Chih Hua Chen; Liao, M.; Ssu Chieh Kao; Chen Yang;

First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability

2012 / IEEE
By: Bonnin, O.; Sun, X.; Ho, B.; Liu, T.-J. K.; Nguyen, B.-Y.; Xu, N.; Akasaka, Y.; Tomoyasu, M.; Maekawa, K.; Sako, T.;

Spatial Composition Grading of Binary Metal Alloy Gate Electrode for Short-Channel SOI/SON MOSFET Application

2012 / IEEE
By: Sarkar, S.; Islam, N.; Sarkhel, S.; Manna, B.; Sarkar, S.K.;

Two-Dimensional Monte Carlo Simulation of DGSOI MOSFET Misalignment

2012 / IEEE
By: Sampedro, C.; Valin, R.; Gamiz, F.; Godoy, A.; Seoane, N.; Garcia-Loureiro, A.; Aldegunde, M.;

Considerations for Ultimate CMOS Scaling

2012 / IEEE
By: Kuhn, K.J.;

A Lambert-Function Charge-Based Methodology for Extracting Electrical Parameters of Nanoscale FinFETs

2012 / IEEE
By: Papathanasiou, K.; Tsormpatzoglou, A.; Dimitriadis, C.A.; Ghibaudo, G.; Tassis, D.H.; Fasarakis, N.;

Local Volume Depletion/Accumulation in GAA Si Nanowire Junctionless nMOSFETs

2012 / IEEE
By: Najmzadeh, M.; Ionescu, A.M.; Grabinski, W.; Berthome, M.; Sallese, J.-M.;

Compact Model of Drain Current in Short-Channel Triple-Gate FinFETs

2012 / IEEE
By: Tsormpatzoglou, A.; Fasarakis, N.; Dimitriadis, C.A.; Ghibaudo, G.; Bucher, M.; Papathanasiou, K.; Pappas, I.; Tassis, D.H.;

Some Semiconductor Device Physics Considerations and Clarifications

2012 / IEEE
By: Schroder, D.K.; Xuan Yang;

Two-Dimensional Analytical Drain Current Model for Double-Gate MOSFET Incorporating Dielectric Pocket

2012 / IEEE
By: Gupta, R.S.; Saxena, M.; Kumari, V.; Gupta, M.;

Unified Scale Length for Four-Terminal Double-Gate MOSFETs

2012 / IEEE
By: Lining Zhang; Feng Liu; Xingye Zhou; Mansun Chan; Xing Zhang; Jin He; Cheng Wang;

A Junctionless Nanowire Transistor With a Dual-Material Gate

2012 / IEEE
By: Jin He; Shengqi Yang; Xinnan Lin; Yunxi Zhu; Lining Zhang; Haijun Lou; Mansun Chan;

High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects

2012 / IEEE
By: Trojman, L.; Ragnarsson, L.; Pantisano, L.;

Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm

2012 / IEEE
By: O'uchi, S.; Liu, Y.; Matsukawa, T.; Masahara, M.; Sakamoto, K.; Mizubayashi, W.; Endo, K.; Morita, Y.; Migita, S.; Ota, H.; Ishikawa, Y.; Yamauchi, H.; Tsukada, J.;

A Two-Dimensional Analysis Method on STI-Aware Layout-Dependent Stress Effect

2012 / IEEE
By: Yan Wang; Yaohua Tan; Zuochang Ye; Xiaojian Li;

Nanoscale FinFET Based SRAM Cell Design: Analysis of Performance Metric, Process Variation, Underlapped FinFET, and Temperature Effect

2011 / IEEE
By: Raj, B.; Dasgupta, S.; Saxena, A.K.;

Exploiting the Body of MOS Devices for High Performance Analog Design

2011 / IEEE
By: Monsurro, P.; Trifiletti, A.; Scotti, G.; Pennisi, S.;

LDMOS Technology for RF Power Amplifiers

2012 / IEEE
By: Theeuwen, S.J.C.H.; Qureshi, J.H.;

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