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Topic: Microwave Performance

Results

High Current Gain Microwave Performance of Organic Metal-Base Transistor
2012 / IEEE
By: bin Mohd Yusoff, A.R.; da Silva, W.J.; Ying Song; Holz, E.; Schulz, D.; Anuar Shuib, S.;
High speed InP/InGaAs uni-traveling-carrier photodiodes with dipole-doped InGaAs/InP absorber-collector interface
2011 / IEEE / 978-3-8007-3356-9
By: Mao, S.; Wang, H.;
Thermal impedance modeling of GaAs multi-finger HBTs from low frequency s-parameter measurements
2011 / IEEE / 978-0-85825-974-4
By: Harvey, J.T.; Fattorini, A.P.; Parker, A.E.; Sevimli, O.;
A novel wafer-level metal/BCB interconnection between both sides of wafer using TSV and its microwave performance
2012 / IEEE / 978-1-4673-1965-2
By: Jiajie Tang; Le Luo; Gaowei Xu; Xiao Chen;
High-speed InAlAs/InGaAs heterojunction bipolar transistors
1988 / IEEE
By: Kawamura, Y.; Fukano, H.; Takanashi, Y.;
High-performance InAlAs/InGaAs HEMTs and MESFETs
1988 / IEEE
By: Fathimulla, A.; Hier, H.; Loughran, T.; Abrahams, J.;
Comparisons of microwave performance between single-gate and dual-gate MODFETs
1988 / IEEE
By: Eastman, L.F.; Radulescu, D.C.; Wang, G.W.; Chen, Y.K.;
0.3- mu m advanced SAINT FET's having asymmetric n/sup +/-layers for ultra-high-frequency GaAs MMIC's
1988 / IEEE
By: Ohwada, K.; Osafune, K.; Yamasaki, K.; Enoki, T.;
A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates
1988 / IEEE
By: Eastman, L.F.; Schaff, W.J.; Chen, Y.-K.; Wang, G.-W.;
Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structures
1988 / IEEE
By: Salmer, G.; Lefebvre, M.; Heliodore, F.; El-Sayed, O.L.;
Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs
1988 / IEEE
By: Moll, N.; Fischer-Colbrie, A.; Hueschen, M.R.;
Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters
1988 / IEEE
By: Bhattacharya, P.K.; Tutt, M.; Pavlidis, D.; Hong, W.-P.; Ng, G.I.;
Microwave performance of ion-implanted InP JFETs
1988 / IEEE
By: Boos, J.B.; Kruppa, W.;
Fabrication and performance of 0.1- mu m gate-length AlGaAs/GaAs HEMTs with unity current gain cutoff frequency in excess of 110 GHz
1988 / IEEE
By: Lepore, A.; Eastman, L.; Tasker, P.; Tiberio, R.; Levy, M.; Kohn, E.; Lee, H.; Radulescu, D.;
An InAlAs/n/sup +/-InGaAs MISFET with a modulation-doped channel
1988 / IEEE
By: del Alamo, J.A.; Mizutani, T.;
High-performance, high-gain, submicrometer GaInAs JFETs
1988 / IEEE
By: Riglet, P.; Baelde, J.; Vingrief, J.J.; Chane, J.P.;
DC and microwave performance of submicrometer InGaAs HIGFETs
1988 / IEEE
By: Shunk, S.C.; Kuo, J.M.; Tennant, D.M.; Feuer, M.D.; Chang, T.Y.; Tell, B.;
GaAs permeable base transistors fabricated with 240-mm-periodicity tungsten base gratings
1988 / IEEE
By: Hollis, M.A.; Mathews, R.H.; Nichols, K.B.; Murphy, R.A.; Vera, A.; Bozler, C.O.;
An experimental radome panel evaluation
1988 / IEEE
By: Dietrich, F.J.; West, D.B.;
High-efficiency X- and Ku-band power FETs fabricated using refractory SAG technology
1988 / IEEE
By: Menk, G.E.; Balzan, M.L.; Sadler, R.A.; Geissberger, A.E.; Griffin, E.L.; Bahl, I.J.;
Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs
1988 / IEEE
By: Eastman, L.F.; Tasker, P.J.; Chen, Y.K.; Wang, G.W.; Aina, O.A.; Kuang, J.B.; Fathimulla, A.; Hier, H.;
Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
1988 / IEEE
By: Delaney, M.J.; Pierce, M.W.; Hooper, C.E.; Rosenbaum, S.E.; Vaughn, S.; Mishra, U.K.; Brown, A.S.; White, K.;
DC and AC characteristics of delta-doped GaAs FET
1989 / IEEE
By: Hong, W.-P.; Abeles, J.H.; Florez, L.; Harbison, J.;
Ultrahigh-frequency performance of submicrometer-gate ion-implanted GaAs MESFETs
1989 / IEEE
By: Lau, C.L.; Feng, M.; Wang, G.W.; Lepkowski, T.R.; Ito, C.;
Microwave multiple-state resonant tunneling bipolar transistors
1989 / IEEE
By: Sen, S.; Lunardi, L.M.; Cho, A.Y.; Sivco, D.L.; Smith, P.R.; Capasso, F.;
Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD
1989 / IEEE
By: Wang, G.W.; Ito, C.; Lau, C.L.; Kaliski, R.; Liaw, Y.P.; Feng, M.;
DC and transmission line models for a high electron mobility transistor
1989 / IEEE
By: Huang, D.-H.; Lin, H.C.;
Super low noise AlGaAs/GaAs HEMT with one tenth micron gate
1989 / IEEE
By: Kawano, M.; Shino, T.; Kawasaki, H.; Kamei, K.;
Theory of regenerative frequency dividers using double-balanced mixers
1989 / IEEE
By: Harrison, R.G.;
An accurate and simple large signal model of HEMT
1989 / IEEE
By: Liu, Q.Z.;
GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application
1989 / IEEE
By: Chang, M.-C.F.; Asbeck, P.M.; Wang, K.-C.; Sullivan, G.J.; Sheng, N.H.; Higgins, J.A.;
Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic
1989 / IEEE
By: Beltram, F.; Sen, S.; Capasso, F.; Cho, A.Y.; Lunardi, L.M.; Malik, R.J.; Shah, N.J.; Smith, P.R.; Vengurlekar, A.S.;
Heterojunction ion-implanted FETs (HIFETs)
1989 / IEEE
By: Ito, C.; Chang, Y.; Lau, C.L.; Kaliski, R.; Liaw, Y.P.; Feng, M.; Wang, G.W.;
Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers
1990 / IEEE
By: Shcaff, W.J.; Offsey, S.D.; Eastman, L.F.; Tasker, P.J.;
Optical test set for microwave fiber-optic network analysis
1990 / IEEE
By: Ames, E.E.; Curtis, D.D.;
Highly stable microwave performance of InP/InGaAs HIGFETs
1990 / IEEE
By: Mattingly, M.R.; Iliadis, A.A.; Aina, O.A.; Martin, E.A.; Hempfling, E.;
Highly lattice-mismatched In/sub 0.26/Ga/sub 0.74/As/GaAs MESFET's: impact of critical thickness on device performance
1990 / IEEE
By: Kaliski, R.; Wang, G.-W.; Kuang, J.B.;
FETs on lattice-mismatched substrates: GaAs/InP and GaAs-AlGaAs/Si
1989 / IEEE
By: Resnick, D.J.; Tennant, D.M.; Chen, Y.K.; Chand, N.; Pearton, S.J.; Hobson, W.S.; Ren, F.;
Microwave performance of SOI n-MOSFETs and coplanar waveguides
1991 / IEEE
By: Potter, R.C.; Caviglia, A.L.; West, L.J.;
Deposited SiO/sub 2/ as the insulator for GaInAs and InP MISFETs
1989 / IEEE
By: Narayan, S.Y.; Gardner, P.D.;
Electrical characteristics of thin-film Ba/sub 2/YCu/sub 3/O/sub 7/ superconducting ring resonators
1991 / IEEE
By: Trambarulo, R.; Schneider, M.V.; Rice, C.E.; Polakos, P.A.;
Monolithically integrated InP-based front-end photoreceivers
1991 / IEEE
By: Pavlidis, D.; Bhattacharya, P.; Lai, R.; Zebda, Y.; Brock, T.L.; Berger, P.R.;
High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base
1991 / IEEE
By: Wang, G.-W.; Sastry, S.; Salerno, J.; Chang, M.F.; Asbeck, P.M.; Nubling, R.; Wang, N.-L.; Wang, K.-C.; Pierson, R.L.;
MODFETs soar to 400 GHz
1991 / IEEE
By: Morkoc, H.;
Physical modeling of microwave transconductance and capacitances in GaAs MESFETs operated in velocity saturation
1990 / IEEE
By: Hipwood, L.G.;
Beam-waveguide antenna performance predictions with comparisons to experimental results
1992 / IEEE
By: Veruttipong, W.; Bathker, D.A.; Cramer, P.W., Jr.; Otoshi, T.Y.;
DC and microwave performance of a 0.1 mu m gate InAs/In/sub 0.52/Al/sub 0.8/As MODFET
1992 / IEEE
By: Brock, T.; Chen, Y.C.; Yang, D.; Bhattacharya, P.K.;
GaAs MESFET physical models for process-oriented design
1992 / IEEE
By: Snowden, C.M.; Pantoja, R.R.;
Reliability issues of InAlAs/InGaAs high-electron-mobility transistors
1991 / IEEE / 0-87942-626-8
By: Mansfield, J.; Pavlidis, D.; Ng, G.I.; Tutt, M.;
Gate-recess and device geometry impact on the microwave performance and noise properties of 0.1 mu m InAlAs/InGaAs HEMT's
1991 / IEEE / 0-7803-0491-8
By: Tutt, M.; Kwon, Y.; Linh, N.T.; Castagne, J.; Oh, J.; Marsh, P.; Brock, T.; Pavlidis, D.; Ng, G.I.;
Depleted surface layer AlInAs/GaInAs/InP HFETs
1991 / IEEE / 0-7803-0491-8
By: Daembkes, H.; Kunzel, H.; Wiersch, A.; Dickmann, J.;
On-wafer RF measurement setup for the characterization of HEMTs and high T/sub c/ superconductors at very low temperatures down to 20 K
1992 / IEEE / 0-7803-0611-2
By: Tegude, F.J.; Brockerhoff, W.; Bertenburg, R.M.; Kraus, J.; Peters, D.; Reuter, R.; Meschede, H.;
High drain current-voltage product of submicrometer-gate ion-implanted GaAs MESFET's for millimeter-wave operation
1992 / IEEE
By: Hwang, T.; Feng, M.;
Microwave performance of GaAs-on-Si MESFETs with Si buffer layers
1993 / IEEE
By: Perantinos, G.; Papavassiliou, C.; Christou, A.; Halkias, G.; Georgakilas, A.; Panayotatos, P.N.; Konstantinidis, G.;
Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor
1993 / IEEE
By: Bolognesi, C.R.; Hu, E.L.; Kroemer, H.; Caine, E.J.; Werking, J.D.;
Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor
1993 / IEEE
By: Fan, S.-K.; Liu, W.; Davito, D.; Henderson, T.;
Forward transit delay in In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with nonequilibrium electron transport
1993 / IEEE
By: Baquedano, J.A.; Nottenburg, R.N.; Laskar, J.; Kolodzey, J.; Levi, A.F.J.;
High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBTs fabricated with MOMBE selective growth in extrinsic base regions
1993 / IEEE
By: Shimawaki, H.; Honjo, K.; Furuhata, N.; Amamiya, Y.;
High microwave and ultra-low noise performance of fully ion-implanted GaAs MESFETs with Au/WSiN T-shaped gate
1993 / IEEE
By: Onodera, K.; Sugitani, S.; Asai, K.; Nishimura, K.;
Monolithic ultra-broadband transimpedance amplifiers using AlGaAs/GaAs heterojunction bipolar transistors
1994 / IEEE
By: Honjo, K.; Takeuchi, T.; Kasahara, K.; Soda, M.; Suzaki, T.; Nagano, N.;
Microwave performance of InGaAs/InP composite collector bipolar transistors
1992 / IEEE / 0-7803-0727-5
By: Hamm, R.A.; Feygenson, A.; Temkin, H.; Yadvish, R.D.; Ritter, D.; Montgomery, R.K.; Smith, P.R.;
Thermal stability analysis of multiple emitter finger microwave AlGaAs/GaAs heterojunction bipolar transistors
1993 / IEEE / 0-7803-1209-0
By: Liou, L.L.; Huang, C.I.; Bayraktaroglu, B.;
Ultra-high-speed InP/InGaAs heterojunction bipolar transistors
1994 / IEEE
By: Jong-In Song; Hong, B.W.-P.; Palmstrom, C.J.; Van Der Gaag, B.P.; Chough, K.B.;
Self-aligned InAlAs/InGaAs heterojunction bipolar transistor with a buried subcollector grown by selective epitaxy
1994 / IEEE
By: Frei, M.R.; Jong-In Song; Cox, H.M.; Bhat, R.; Hayes, J.R.;
GaInP/GaAs double heterojunction bipolar transistor with high f/sub T/, f/sub max/, and breakdown voltage
1994 / IEEE
By: Hong, W.-P.; Kyung-Bae Chough; Caneau, C.; Jong-In Song;
The quasi-optical ferrite reflection circulator: microwave performance and applications
1994 / IEEE / 0-7803-1778-5
By: Dionne, G.F.; Lax, B.; Weiss, J.A.; Harris, N.W.;
A novel insulated-gate InP/InAlAs MODFET
1993 / IEEE / 0-7803-0993-6
By: Hier, H.; Gutierrez, D.; Fathimulla, A.;
Optimization of the buffer thickness for high performance 1 /spl mu/m gate GaAs MESFETs on InP substrate for OEICs
1993 / IEEE / 0-7803-0993-6
By: Azoulay, R.; Chovet, A.; Boudiaf, A.; Chertouk, M.; Clei, A.;
High-performance 0.15 /spl mu/m-gatelength OMVPE-grown InAlAs/InGaAs MODFETs
1993 / IEEE / 0-7803-0993-6
By: Nummila, K.; Adesida, I.; Bhat, R.; Caneau, C.; Tong, M.;
An extremely low-noise InP-based HEMT with silicon nitride passivation
1994 / IEEE / 0-7803-2111-1
By: Ming-Yih Kao; Pane-Chane Chao; Pin Ho; Duh, K.H.G.;
Ultrahigh f/sub T/ and f/sub max/ new self-alignment InP/InGaAs HBT's with a highly Be-doped base layer grown by ALE/MOCVD
1995 / IEEE
By: Matsumiya, Y.; Iwai, T.; Shigematsu, H.; Fujii, T.; Ueda, O.; Ohnishi, H.;
Microwave performance of YBa/sub 2/Cu/sub 3/O/sub 7-x/ resonators coupled to single-junction SQUIDs
1995 / IEEE
By: Zhang, Y.; Piel, H.; Strupp, M.; Schmoe, S.; Hein, M.A.; Braginski, A.I.;
Temperature dependent study of carbon-doped InP/InGaAs HBT's
1996 / IEEE
By: Feng, M.; Scherrer, D.; Mares, P.J.; Kruse, J.; Stillman, G.E.;
High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors
1995 / IEEE
By: Feng, M.; Hartmann, Q.J.; Mares, P.J.; Ahmari, D.A.; Fresina, M.T.; Stillman, G.E.;
Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates
1996 / IEEE
By: Tachikawa, A.; Jono, A.; Ohta, Y.; Goto, M.; Aigo, T.; Moritani, A.;
Improved microwave performance of InP based HEMT using a floating gate tetrode arrangement
1996 / IEEE / 0-7803-3283-0
By: Kunzel, H.; Mittermeier, E.; Henle, B.; Long, W.; Strahle, S.; Kohn, E.;
0.1-/spl mu/m p/sup +/-GaAs gate HJFETs with f/sub T/=121 GHz fabricated using all dry-etching and selective MOMBE growth
1995 / IEEE / 0-7803-2700-4
By: Tokushima, M.; Furuhata, N.; Wada, S.; Maeda, T.; Hida, H.; Fukaishi, M.;
Si/SiGe high-speed field-effect transistors
1995 / IEEE / 0-7803-2700-4
By: Ismail, K.;
Temperature dependent study of the microwave performance of 0.25-/spl mu/m gate GaAs MESFETs and GaAs pseudomorphic HEMTs
1996 / IEEE
By: Scherrer, D.R.; Feng, M.; Kruse, J.W.; Apostolakis, P.J.;
High-frequency characteristics and its dependence on parasitic components in 0.1 /spl mu/m Si-MOSFETs
1996 / IEEE / 0-7803-3342-X
By: Mogami, T.; Furukawa, A.; Togo, M.; Tanabe, A.; Yamamoto, T.;
Temperature and bias effects in high resistivity silicon substrates
1996 / IEEE / 0-7803-3246-6
By: Dorn, S.; El-Ghazaly, S.M.; Reyes, A.C.; Dydyk, M.;
Microwave performance of InP-based HEMTs for low voltage application fabricated by optical lithography
1995 / IEEE / 0-7803-2147-2
By: Lee, L.; Henle, B.; Strahle, S.; Kohn, E.; Kunzel, H.;
Spacer design to improve the breakdown voltage of InAlAs-InGaAs HEMTs
1995 / IEEE / 0-7803-2147-2
By: Tardy, J.; Simmons, J.G.; Thompson, D.A.; Gendry, M.; Viktorovitch, P.; Letartre, X.;
Solderless interconnects for 3D microwave packaging
1995 / IEEE / 0-7803-3034-X
By: Wooldridge, J.;
Enhancement of f/sub max/ in InP/InGaAs HBTs by selective MOCVD growth of heavily-doped extrinsic base regions
1996 / IEEE
By: Matsuoka, Y.; Kobayashi, T.; Ito, H.; Kurishima, K.; Yamahata, S.; Ida, M.;
Striped-channel InAlAs/InGaAs HEMTs with shallow-grating structures
1996 / IEEE
By: Youngwoo Kwon; Brock, T.; Hein, K.; Pavlidis, D.;
Lateral p/sup +//p regrown base contacts for AlGaAs/InGaAs HBTs with extremely thin base layers
1996 / IEEE / 0-7803-3358-6
By: Furuhata, N.; Shimawaki, H.; Amamiya, Y.; Honjo, K.; Goto, N.; Mamada, M.;
A low-voltage, low-power microwave SOI MOSFET
1996 / IEEE / 0-7803-3315-2
By: Flandre, D.; Chen, J.; Colinge, J.P.; Vanhoenacker, D.; Gillon, R.; Raskin, J.P.;
High temperature operation of AlInAs/InGaAs/AlInAs 3D-SMODFETs with record two-dimensional electron gas densities
1996 / IEEE / 0-7803-3393-4
By: Seaford, M.; Lepore, A.; Martint, G.H.; Eastman, L.F.; Spencer, R.M.; Pereiaslavets, B.;
In/sub 0.52/Al/sub 0.48/As/InAs/InxAl/sub 1-x/As pseudomorphic HEMT's on InP
1997 / IEEE
By: Chin, A.; Tsai, C.; Liao, C.C.;
Si/SiGe CMOS: can it extend the lifetime of Si?
1997 / IEEE / 0-7803-3721-2
By: Ismail, K.;
Microwave performance of AlGaN/GaN inverted MODFET's
1997 / IEEE
By: Aktas, O.; Morkoc, H.; Kehias, L.; Jenkins, T.; Fan, Z.F.; Mohammad, S.N.; Botchkarev, A.; Roth, M.;
High-performance Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFET's grown by gas-source MBE
1997 / IEEE
By: Yo-Sheng Lin; Yo-Jen Wang; Shey-Shi Lu;
Fabrication, performance and modelling of high-speed GaAs MSM photodetectors
1996 / IEEE / 0-7803-3374-8
By: Kachwalla, Z.; Winnall, S.;
The effect of thermal shunt on the current instability of multiple-emitter-finger heterojunction bipolar transistors
1993 / IEEE / 0-7803-1316-X
By: Bayraktaroglu, B.; Liou, L.L.; Barrette, J.; Huang, C.I.;
Performance optimization of PNP InAlAs/InGaAs HBTs
1997 / IEEE / 0-7803-3970-3
By: Pavlidis, D.; Zhang, X.; Sawdai, D.; Bhattacharya, P.;
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
1998 / IEEE
By: Ping, A.T.; Adesida, I.; Khan, M.A.; Yang, J.W.; Chen, Q.;
Impact ionization and quantum confinement effects on the microwave performance of narrow bandgap channel millimeter-wave HFETs
1997 / IEEE / 0-7803-4135-X
By: Chow, D.H.; Dvorak, M.W.; Bolognesi, C.R.;
Investigation of microstrip and coplanar transmission lines on lossy silicon substrates without backside metallization
1998 / IEEE
By: Schuppen, A.; Erben, U.; Durr, W.; Schumacher, H.; Dietrich, H.;
0.1-/spl mu/m p/sup +/-GaAs gate HJFET's fabricated using two-step dry-etching and selective MOMBE growth techniques
1998 / IEEE
By: Maeda, T.; Hida, H.; Fukaishi, M.; Tokushima, M.; Furuhata, N.; Wada, S.;

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