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Topic: Metal Semiconductor Field Effect Transistors

Results

Drain-induced barrier lowering effect and its dependence on the channel doping in 4H-SiC MESFETs

2004 / IEEE / 0-7803-8511-X
By: Chin-Che Tin; Rusli; Chunlin Zhu; Jaeshin Ahn; Soon Fat Yoon;

Small-Signal Modeling of Microwave MESFETs Using RBF-ANNs

2007 / IEEE
By: Foo, S.Y.; Langoni, D.; Martinez, H.A.; Weatherspoon, M.H.;

DC characteristics of the SiC MESFETs

2006 / IEEE / 966-553-507-2
By: Bisewski, D.; Zarebski, J.;

MMIC technology at Gallium Arsenide Enabling Technology Centre

2007 / IEEE / 978-1-4244-1727-8
By: Muralidharan, R.;

Microwave performance of surface channel diamond MESFETs

2009 / IEEE / 978-1-4244-4695-7
By: Corsaro, A.; Calvani, P.; Limiti, E.; Carta, S.; Conte, G.; Rossi, M.C.; Sinisi, F.;

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

2011 / IEEE
By: Shuai Wu; Kocan, M.; Adam, R.; Gregusova, D.; Kordos, P.; Zhang, J.; Marso, M.; Mikulics, M.; Grutzmacher, D.; Sobolewski, R.;

Comparative study of mathematically modelled High Electron Mobility Transistors and silicon nanowire transistors

2011 / IEEE / 978-1-4244-8679-3
By: Narayanankutty, K.A.; Menon, S.N.;

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