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Topic: Mesfets

Results

New high-speed (Al, Ga) as modulation doped field-effect transistors

1985 / IEEE
By: Morkoc, H.; Fischer, R.;

A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

2012 / IEEE
By: Orouji, A.A.; Aminbeidokhti, A.; Ghasemian, M.; Rahmaninezhad, S.;

Spatial, LET and Range Dependence of Enhanced Charge Collection by Single Ion Strike in 4H-SiC MESFETs

2012 / IEEE
By: Ohshima, T.; Arai, M.; Katakami, S.; Ono, S.; Makino, T.; Onoda, S.;

High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

2012 / IEEE
By: Rahimian, M.; Orouji, A.A.; Aminbeidokhti, A.;

Realization of Unidirectional Planar GaAs Nanowires on GaAs (110) Substrates

2012 / IEEE
By: Dowdy, R.; Xiuling Li; Fortuna, S.A.; Walko, D.A.;

The low frequency noise behaviour of SiC MESFETs

2011 / IEEE / 978-1-4577-0192-4
By: Cichosz, J.; Konczakowska, A.; Stawarz-Graczyk, B.; Szewczyk, A.; Flisikowski, P.; Dokupil, D.;

Combination of a 4H-SiC MESFET with a 4H-SiC MOSFET to realize a high voltage MOSFET

2011 / IEEE / 978-1-61284-653-8
By: Rajabi, S.; Mahabadi, S.E.J.; Moghadam, H.A.;

A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement

2011 / IEEE / 978-1-61284-653-8
By: Fathipour, M.; Mahabadi, S.E.J.; Moghadam, H.A.; Orouji, A.A.; Rajabi, S.;

Software for measurement automation, deembedding and small-signal FET model extraction

2011 / IEEE / 978-966-335-357-9
By: Salnikov, A.S.; Stepacheva, A.V.; Dobush, I.M.; Babak, L.I.; Samuilov, A.A.; Kokolov, A.A.;

Extreme frequency characteristics of GaAs-based MESFET for a given geometry

2011 / IEEE / 978-966-335-357-9
By: Zuev, S.A.; Asanov, E.E.; Kilessa, G.V.;

Breakdown pecularity of the shifted to source mesfet gate

2011 / IEEE / 978-966-335-357-9
By: Pogorelova, E.V.; Martynov, Y.B.;

Output network of the microwave doherty amplifier on MESFET CLY5

2011 / IEEE / 978-966-335-357-9
By: Prylypska, G.S.; Kryzhanovskiy, V.G.;

Test board for power FET's nonliner model extraction

2011 / IEEE / 978-966-335-357-9
By: Kapralova, A.A.; Tregubov, V.B.; Pchelin, V.A.; Pashkovskii, A.B.; Manchenko, L.V.; Korchagin, I.P.;

An analysis of the modeling accuracy of the GaAs MESFET models for telecommunication power amplifier design

2011 / IEEE / 978-1-4577-1647-8
By: Chien, C.;

SOI MESFETs for extreme environment buck regulators

2011 / IEEE / 978-1-61284-760-3
By: Goryll, M.; Lepkowski, W.; Thornton, T.J.; Sochacki, J.; Zhang, Y.; Wilk, S.J.;

Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors

2011 / IEEE / 978-1-61284-172-4
By: Alexandru, M.; Millan, J.; Godignon, P.; Vellvehi, M.; Banu, V.;

Cascode MOSFET-MESFET RF power amplifier on 150nm SOI CMOS technology

2011 / IEEE / 978-2-87487-023-1
By: Thornton, T.; Boumaiza, S.; Bakkaloglu, B.; Wilk, S.; Lepkowski, W.; Ghajar, M.R.;

A new GaAs Multi-Chip MMIC C-Band Variable Gain Amplifier for point to point wireless communication systems

2011 / IEEE / 978-2-87487-023-1
By: Tajadod, J.; Zhang, D.;

Combined use of heavy ion and proton test data in the determination of a GaAs Power MESFET critical charge and sensitive depth

2011 / IEEE / 978-1-4577-0586-1
By: Sierawski, B.D.; Santin, G.; Nieminen, P.; Evans, H.D.R.; Daly, E.J.; Garcia, R.; Mendenhall, M.H.;

Spatial, LET and range dependence of enhanced charge collection by single ion strike in 4H-SiC MESFETs

2011 / IEEE / 978-1-4577-0586-1
By: Makino, T.; Onoda, S.; Ohshima, T.; Arai, M.; Katakami, S.; Ono, S.;

Analytical model for ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

2011 / IEEE / 978-1-4577-1756-7
By: Zhang, Z.Y.; Wang, S.G.;

Impact of localised charges present in the interfacial layer of the schottky contact in SOI MESFET

2012 / IEEE / 978-1-4577-1546-4
By: Gupta, M.; Gupta, R.S.; Saxena, M.; Gautam, R.;

Two-dimensional analytical potential distribution model for GaN MESFET

2012 / IEEE / 978-1-4577-1546-4
By: Ahmed, T.; Islam, M.S.; Khan, M.T.A.;

Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology

2012 / IEEE / 978-1-4577-1121-3
By: Thornton, T.J.; Bakkaloglu, B.; Lepkowski, W.; Wilk, S.J.; Ghajar, M.R.;

2012 International Conference on Devices, Circuits and Systems (ICDCS)

2012 / IEEE / 978-1-4577-1546-4

A novel consistent gate-charge model of GaAs MESFETs for the design of Ku-band power amplifiers

2011 / IEEE / 978-0-85825-974-4
By: Zheng Zhong; Mook Seng Leong; Yongxin Guo;

A novel table based large signal model for FETs based on non-quasi-static effect high order sources

2011 / IEEE / 978-0-85825-974-4
By: Yongxin Guo; Yunshen Long; Yoke Choy Leong; Zheng Zhong;

Simulation of temperature effects on GaAs MESFET based on physical model

2012 / IEEE / 978-1-4577-1911-0
By: Hantian Gu; Guicui Fu; Chao Zhang; Dong Zhang;

Characterization and modeling of enhanced voltage RF MESFETs on 45nm CMOS for RF applications

2012 / IEEE / 978-1-4673-0416-0
By: Ghajar, M.R.; Wilk, S.J.; Thornton, T.J.; Bakkaloglu, B.; Lepkowski, W.;

A theoretical approach to study the temperature dependent performance of a SiC MESFET in sensor application.

2012 / IEEE / 978-1-4673-1043-7
By: Dutta, Sutanu;

One-directional 3D-SiC MESFET for high power applications

2014 / IEEE
By: Shen, Zheng; Abdel-Motaleb, Ibrahim; Veesam, Vamshi; Thakkallapally, Ramana;

Investigation of the effect of gate voltage on the performance of organic bulk hetero-junction based phototransistor

2014 / IEEE
By: Karimov, Kh. S.; Kosemen, Zuhal A.; San, Sait Eren; Tauqeer, T.; Yasin, Muhammad; Mahmood, Asad;

Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs

2015 / IEEE
By: Giovine, E.; Pietrantonio, F.D.; Colangeli, S.; Ciccognani, W.; Verona, C.; Verona-Rinati, G.; Marinelli, M.; Limiti, E.;

Enhancement of Ru–Si–O/In–Ga–Zn–O MESFET Performance by Reducing Depletion Region Trap Density

2015 / IEEE
By: Pagowska, K.; Borysiewicz, M.A.; Taube, A.; Kaminska, E.; Grochowski, J.; Kaczmarski, J.; Piotrowska, A.; Jung, W.;

Metal-Semiconductor Field-Effect Transistors With In–Ga–Zn–O Channel Grown by Nonvacuum-Processed Mist Chemical Vapor Deposition

2015 / IEEE
By: Allen, M.W.; Furuta, M.; Kawaharamura, T.; Dang, G.T.;

SiC Integrated Circuit Control Electronics for High-Temperature Operation

2015 / IEEE
By: Jorda, X.; Banu, V.; Alexandru, M.; Godignon, P.; Millan, J.; Tournier, D.; Vellvehi, M.; Montserrat, J.;

Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

2014 / IEEE
By: Matsumoto, T.; Umezawa, H.; Shikata, S.;

Monothically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

2014 / IEEE
By: Novack, A.; Shi, R.; Hochberg, M.; Baehr-Jones, T.; Lo, G.; Lim, A.E.; Tan, K.; Tao, J.; Streshinsky, M.;

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

2014 / IEEE
By: Orouji, A.A.; Ramezani, Z.;

Effects of interfacial layer on submicron GaAs MESFETs characteristics

2013 / IEEE
By: Memon, N. M.; Ahmed, M. M.; Moiz, S. A.;

An efficient mechanism to simulate DC characteristics of GaAs MESFETs using swarm optimization

2013 / IEEE
By: Rafique, U.; Memon, N. M.; Ahmed, M. M.; Memon, Q. D.;

Non-linear model for microwave transistors including low-frequency dispersion and memory effects

2014 / IEEE
By: Castellanos-Ballesteros, O.; Rafael-Valdivia, G.;

SOI MESFET RF power amplifiers at the 45nm node

2014 / IEEE
By: Thornton, Trevor J.; Lepkowski, William; Wilk, Seth J.;

An overview on recent developments in RF and microwave power H-terminated diamond MESFET technology

2014 / IEEE
By: Moran, D. A. J.; Limiti, E.; Ghione, G.; Cappelluti, F.; Camarchia, V.; Pirola, M.;

Low-power 2K-cell SDFL gate array and DCFL circuits using GaAs self-aligned E/D MESFETs

1988 / IEEE
By: Lee, G.Y.; Jamison, S.A.; Helix, M.J.; Hanka, S.A.; Betten, W.R.; Peczalski, A.; Swanson, S.K.; Lee, K.W.; Roberts, P.C.T.; Lee, G.M.; Nelson, R.D.; Vu, T.T.; Vold, P.J.; Shur, M.S.; Gilbert, B.K.; Naused, B.A.; Karwoski, S.M.; Arsenault, C.A.;

The performance of source-coupled FET logic circuits that use GaAs MESFETs

1988 / IEEE
By: Vu, T.T.; Conger, J.; Lee, K.W.; Peczalski, A.;

Fully ECL-compatible GaAs standard-cell library

1988 / IEEE
By: Schou, G.; Chaplard, J.; Dean, T.; Danckaert, J.-Y.; Perea, E.H.; Cherel, J.;

5.2-GHz bandwidth monolithic GaAs optoelectronic receiver

1988 / IEEE
By: Harder, C.S.; Vettiger, P.; Patrick, W.; Meier, H.; Van Zeghbroeck, B.;

Millimeter-wave GaAs power FET with a pulse-doped InGaAs channel

1988 / IEEE
By: Wurtele, M.; Shih, H.-D.; Kim, B.; Tserng, H.Q.;

Threshold-voltage control for GaAs MESFETs using the thermal-wave technique

1988 / IEEE
By: Toyoda, N.; Uchitomi, N.; Nii, R.;

InGaAs metal-semiconductor field-effect transistor with Langmuir-Blodgett deposited gate structure

1988 / IEEE
By: Schlotter, N.E.; Bhat, R.; Chang, G.-K.; Chan, W.K.;

Heterojunction InAlAs/InP MESFETs grown by OMVPE

1988 / IEEE
By: Stecker, L.; Loughran, T.; Fathimulla, M.A.; Aina, O.; Mattingly, M.; Hempfling, E.;

Gallium-arsenide E- and D-MESFET device noise characteristics operated at cryogenic temperatures with ultralow drain current

1988 / IEEE
By: Sokolich, M.; Sato, R.N.; Duffey, J.R.; Doudoumopoulos, N.;

Fabrication and performance of GaAs MESFETs with graded channel doping using focused ion-beam implantation

1988 / IEEE
By: Evason, A.F.; Ahmed, H.; Cleaver, J.R.A.;

High-performance InAlAs/InGaAs HEMTs and MESFETs

1988 / IEEE
By: Fathimulla, A.; Hier, H.; Loughran, T.; Abrahams, J.;

High-performance GaAs MESFETs fabricated on misoriented

1988 / IEEE
By: Abeles, J.H.; Harbison, J.; Lo, Y.H.; Nahory, R.E.; Lee, T.P.;

A 630-mS/mm GaAs MESFET with Au/WSiN refractory metal gate

1988 / IEEE
By: Asai, K.; Yamane, Y.; Sugitani, S.; Tokumitsu, M.; Onodera, K.;

A 1.5-GHz programmable divide-by-N GaAs counter

1988 / IEEE
By: Kane, M.G.; Fowlis, D.C.; Cherensky, S.S.; Chan, P.Y.;

GaAs power MESFET with 41-percent power-added efficiency at 35 GHz

1988 / IEEE
By: Wurtele, M.; Kim, B.; Tserng, H.Q.; Shih, H.D.;

New method for measuring carrier concentration profile near a GaAs surface through a network analyzer

1988 / IEEE
By: Fukai, Y.K.; Muraguchi, M.;

New MBE buffer used to eliminate backgating in GaAs MESFETs

1988 / IEEE
By: Chen, C.-L.; Calawa, A.R.; Smith, F.W.; Mahoney, L.J.; Manfra, M.J.;

(110)-oriented GaAs MESFETs

1988 / IEEE
By: Ou, W.; Pao, Y.C.; Harris, J.S., Jr.;

Applications of resonant-tunneling field-effect transistors

1988 / IEEE
By: McGill, T.C.; Woodward, T.K.; Burnham, R.D.; Chung, H.F.;

Subthreshold current ion GaAs MESFETs

1988 / IEEE
By: Peczalski, A.; Conger, J.; Shur, M.S.;

GaAs MESFET device dependences on ion-implant tilt and rotation angles

1988 / IEEE
By: Anholt, R.E.; Hitchens, W.R.; Rosemblatt, D.H.; Sigmon, T.W.;

Temperature dependence and persistent conductivity of GaAs MESFETs with superlattice buffers

1988 / IEEE
By: Liou, J.-C.; Lau, K.M.;

Ultra-low-noise cryogenic high-electron-mobility transistors

1988 / IEEE
By: Duh, K.H.G.; Weinreb, S.; Ballingall, J.M.; Lester, L.F.; Smith, P.M.; Chao, P.-C.; Jabra, A.A.; Ho, P.; Kopp, W.F.; Pospieszalski, M.W.;

Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies

1988 / IEEE
By: Ladbrooke, P.H.; Blight, S.R.;

Improvement of alpha-particle-induced soft-error immunity in a GaAs SRAM by a buried p-layer

1988 / IEEE
By: Shigeta, J.; Masuda, N.; Umemoto, Y.; Mitsusada, K.;

An analytical two-dimensional model for silicon MESFETs

1988 / IEEE
By: Meindl, J.D.; Marshall, J.D.;

A sub- and near-threshold current model for silicon MESFETs

1988 / IEEE
By: Marshall, J.D.; Meindl, J.D.;

A two-dimensional analytical model of threshold voltages of short-channel MOSFETs with Gaussian-doped channels

1988 / IEEE
By: Lahiri, S.K.; Dasgupta, A.;

Low-field electron transport mechanism in GaAs MESFETs

1988 / IEEE
By: Dutton, R.W.; Shenai, K.;

Channel-buffer (substrate) interface phenomena in GaAs MESFETs fabricated by molecular-beam epitaxy

1988 / IEEE
By: Shenai, K.; Dutton, R.W.;

The effects of parasitic capacitance on the noise figure of MESFETs

1988 / IEEE
By: Nair, V.; Tehrani, S.; Tam, G.; Weitzel, C.E.;

An investigation of the power characteristics and saturation mechanisms in HEMTs and MESFETs

1988 / IEEE
By: Weiss, M.R.; Pavlidis, D.;

A new analytical model for the GaAs MESFET in the saturation region

1988 / IEEE
By: Pasquet, D.; Gautier, J.-L.; Pouvil, P.;

Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs

1988 / IEEE
By: McNally, P.J.; Ramirez, J.-C.; Jackson, T.N.; Freund, L.B.; Rosenberg, J.J.; Cooper, L.S.;

Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs

1988 / IEEE
By: Byun, Y.H.; Schuermeyer, F.L.; Peczalski, A.; Shur, M.S.;

The effect of drain bias upon frequency response in GaAs MESFETs

1988 / IEEE
By: Curtice, W.R.;

Passivation of GaAs FET's with PECVD silicon nitride films of different stress states

1988 / IEEE
By: Cibuzar, G.T.; Chang, E.Y.; Pande, K.P.;

Simulation of submicrometer GaAs MESFET's using a full dynamic transport model

1988 / IEEE
By: Feng, Y.-K.; Hintz, A.;

Sidegating characteristics as a function of distance and dose for implanted and metallic sidegates on proton-isolated GaAs

1988 / IEEE
By: Rao, H.V.; Wolf, M.A.;

An improved two-dimensional simulation model (MEGA) for GaAs MESFET applicable to LSI design

1988 / IEEE
By: Yoshida, J.; Hirose, M.; Toyoda, N.;

Inverted-gate field-effect transistors: novel high-frequency structures

1988 / IEEE
By: El-Ghazaly, S.; Itoh, T.;

Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structures

1988 / IEEE
By: Salmer, G.; Lefebvre, M.; Heliodore, F.; El-Sayed, O.L.;

Ultimate scaling limits for high-frequency GaAs MESFETs

1988 / IEEE
By: Golio, J.M.;

Velocity overshoot in ultra-short-gate-length GaAs MESFETs

1988 / IEEE
By: Ferry, D.K.; Bernstein, G.;

Gate current 1/f noise in GaAs MESFET's

1988 / IEEE
By: Peransin, J.-M.; Rigaud, D.; Vandamme, L.K.J.; Dumas, J.-M.; Alabedra, R.;

Compensation effects on the electron velocity in submicrometer GaAs MESFETs

1988 / IEEE
By: Grotjohn, T.A.;

Static characteristics of 2.3-nm gate-oxide MOSFETs

1988 / IEEE
By: Nagai, K.; Hayashi, Y.;

Noise modeling and measurement techniques (HEMTs)

1988 / IEEE
By: Cappy, A.;

Noise in two-tier matrix amplifiers

1988 / IEEE
By: Niclas, K.B.; Chang, A.P.;

A fully analytical AC large-signal model of the GaAs MESFET for nonlinear network analysis and design

1988 / IEEE
By: Madjar, A.;

A large-signal, analytic model for the GaAs MESFET

1988 / IEEE
By: Khatibzadeh, M.A.; Trew, R.J.;

Nonlinear design procedures for single-frequency and broad-band GaAs MESFET power amplifiers

1988 / IEEE
By: Brazil, T.J.; Scanlan, S.O.;

The influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers

1988 / IEEE
By: Pavlidis, D.; Graffeuil, J.; Cazaux, J.-L.;

p-i-n diode attenuator with small phase shift

1988 / IEEE
By: Baeten, R.J.; Hyde, J.S.; Ishii, T.K.;

A low-distortion K-band GaAs power FET

1988 / IEEE
By: Braun, D.M.; Kotzebue, K.; Tan, T.S.; McQuate, D.; Centanni, J.;

Frequency normalization of constant power contours for MESFETs

1988 / IEEE
By: Mondal, J.P.;

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