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Topic: Mesfet Integrated Circuits

Results

A Thermocouple-Based Self-Heating RF Power Sensor With GaAs MMIC-Compatible Micromachining Technology
2012 / IEEE
By: Xiaoping Liao; Zhiqiang Zhang;
High speed GaAs-MeSFET differential amplifier stage with integrated current source
1974 / IEEE
By: Kohn, E.; Beneking, H.;
Simulation of temperature effects on GaAs MESFET based on physical model
2012 / IEEE / 978-1-4577-1911-0
By: Hantian Gu; Guicui Fu; Chao Zhang; Dong Zhang;
Threshold-voltage control for GaAs MESFETs using the thermal-wave technique
1988 / IEEE
By: Toyoda, N.; Uchitomi, N.; Nii, R.;
A GaAs 4-bit adder-accumulator circuit for direct digital synthesis
1988 / IEEE
By: Long, S.I.; Ekroot, C.G.;
GaAs MESFET laser-driver IC for 1.7-Gbit/s lightwave transmitter
1988 / IEEE
By: Chen, F.S.; Bosch, F.;
Numerical simulation of GaAs MESFET's on the semi-insulting substrate compensated by deep traps
1988 / IEEE
By: Horio, K.; Ikoma, T.; Yanai, H.;
Monolithic integrated optoelectronic transmitter on GaAs with fully RIE GRINSCH laser diode
1988 / IEEE
By: Fox, K.; Lester, T.; Svilans, M.; SpringThorpe, A.J.; Postolek, H.; Maritan, C.; Mandeville, P.;
Monolithic dual-gate MESFET power amplifiers for Ka-band
1988 / IEEE
By: Peterson, K.E.; Hegazi, G.; Hung, H.-L.A.; Huang, H.C.; Phelleps, F.R.;
OMVPE grown GaAs MESFETs with step-doped channel for MMICs
1988 / IEEE
By: Shiga, N.; Katsuyama, T.; Otobe, K.; Nakajima, S.; Hayashi, H.;
GaAs buried-channel MESFET analog integrated circuits
1988 / IEEE
By: Allstot, D.J.; Canfield, P.C.; Yang, H.C.;
High-speed analog-to-digital conversion with GaAs technology: prospects, trends and obstacles
1988 / IEEE
By: Larson, L.E.;
Gigabit transmitter/receiver GaAs IC chip set for optical communications
1988 / IEEE
By: Nakayama, Y.; Onodera, H.; Kawai, M.; Naitou, H.; Yamaguchi, N.; Yamaguchi, K.; Ohtsuka, T.; Yamashita, H.;
A GaAs MESFET IC for optical multiprocessor networks
1989 / IEEE
By: Crow, J.D.; Widiger, D.; Bermon, S.; Callegari, A.; Ewen, J.F.; Feder, J.D.; Greiner, J.H.; Harris, E.P.; Hoh, P.D.; Hovel, H.J.; Magerlein, J.H.; McKoy, T.E.; Pomerene, A.T.S.; Rogers, D.L.; Scott, G.J.; Thomas, M.; Mulvey, G.W.; Ko, B.K.; Ohashi, T.; Scontras, M.; Anderson, C.J.;
A high quality GaAs IC tuner for TV/VCR receivers
1988 / IEEE
By: Shinagawa, M.; Sakamoto, K.; Akitake, I.; Shinkawa, K.; Mizukami, H.; Nagashima, T.; Hatashita, H.; Sakuta, K.;
Intrinsic GaAs MESFET equivalent circuit models generated from two-dimensional simulations
1989 / IEEE
By: Curtice, W.R.;
Theoretical analysis of an Al/sub 0.15/Ga/sub 0.85/As/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT using an ensemble Monte Carlo simulation
1989 / IEEE
By: Brennan, K.F.; Park, D.H.;
Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications
1989 / IEEE
By: Delaney, M.J.; Rosenbaum, S.E.; McCray, L.G.; Thompson, M.A.; Hooper, W.W.; Brown, A.S.; Deakin, D.S.; Jensen, J.F.; Larson, L.E.; Chou, C.S.;
Numerical simulation of GaAs MESFETs with a p-buffer layer on a semi-insulating substrate compensated by deep traps
1989 / IEEE
By: Horio, K.; Yanai, H.; Kusuki, H.; Fuseya, Y.;
A GaAs MESFET small-signal equivalent circuit including transmission line effects
1989 / IEEE
By: Paulsen, A.; Fjeldly, T.A.; Jensen, O.;
Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz
1989 / IEEE
By: Lau, C.L.; Ito, C.; Chang, Y.; Wang, G.W.; Lepkowski, T.R.; Feng, M.;
A DC-18 GHz GaAs MESFET monolithic variable slope gain-equalizer IC
1989 / IEEE
By: Sun, H.J.; Morley, B.C.;
A GaAs DC-20 GHz SPDT absorptive switch
1989 / IEEE
By: Khabbaz, B.; Powell, S.; Morais, S.;
The design and performance of large signal distributed microwave amplifiers
1989 / IEEE
By: Sobhy, M.I.; Castelino, A.J.;
A 2-20 GHz dual channel receiver with 2-6 GHz IF
1989 / IEEE
By: Gluck, J.; Tan, S.P.; Bharj, S.S.; Thompson, B.;
MMIC-compatible 55 mW InP and GaAs 30-40 GHz field controlled TE-oscillators
1989 / IEEE
By: Thim, H.; Diskus, C.; Grutzmacher, D.; Scheiber, H.; Lubke, K.;
Broadband high-efficiency MMIC power amplifiers using ion-implanted MESFET technology
1989 / IEEE
By: Kasel, K.; Tan, K.; Shih, Y.C.; Wang, S.K.; Yu, K.K.;
A monolithic DC-1.6 GHz digital attenuator
1989 / IEEE
By: Bayruns, J.; Scheinberg, N.; Wallace, P.;
Microwave characterization of a resistive-gate MESFET oscillator
1989 / IEEE
By: Cooper, J.A., Jr.; Geissberger, A.E.; Balzan, M.L.; Yin, Y.;
MESFET simulation oriented toward computer-aided microwave circuit design
1990 / IEEE
By: Blakey, P.A.; Sandborn, P.A.;
Teaching CAD to microwave students
1990 / IEEE
By: Gupta, K.C.;
A novel self-aligned gate process for half-micrometer gate GaAs ICs using ECR-CVD
1990 / IEEE
By: Hayashi, H.; Tsuchimoto, J.; Shikata, S.;
Frequency limitations of a conventional phase-frequency detector
1990 / IEEE
By: Meyer, R.G.; Soyuer, M.;
A p-well GaAs MESFET technology for mixed-mode applications
1990 / IEEE
By: Allstot, D.J.; Canfield, P.C.;
Operation of a resistive-gate MESFET oscillator in the single-domain transit-time mode
1990 / IEEE
By: Geissberger, A.E.; Balzan, M.L.; Cooper, J.A., Jr.; Fu, H.; Yin, Y.;
Modeling MESFETs for intermodulation analysis of mixers and amplifiers
1990 / IEEE
By: Neilson, D.; Maas, S.A.;
Frequency-dependent characteristics and trap studies of lattice-matched (x=0.53) and strained (x>0.53) In/sub 0.52/Al/sub 0.48/As/In/sub x/ Ga/sub 1-x/As HEMTs
1991 / IEEE
By: Ng, G.-I.; Pavlidis, D.;
Analytical voltage dependence of an unsaturated MESFET's gate capacitance
1991 / IEEE
By: Newman, P.; Buchwald, W.; Taysing-Lara, M.; Folkes, P.A.; Poli, L.;
2.488 Gb/s SONET multiplexer/demultiplexer with frame detection capability
1991 / IEEE
By: Kong, D.T.;
H-MESFET compatible GaAs/AlGaAs MSM photodetector
1991 / IEEE
By: Burroughes, J.H.;
Simplified simulations of GaAs MESFET's with semi-insulating substrate compensated by deep levels
1991 / IEEE
By: Kusuki, H.; Fuseya, Y.; Horio, K.; Yanai, H.;
Monolithic 40 to 60 GHz LNA
1990 / IEEE
By: Chye, P.; Camilleri, N.; Gregory, P.; Lee, A.;
A monolithic mixer IC: design and characteristics on n-implant only, buried p- and MBE wafers
1990 / IEEE
By: Hou, D.; Yun, Y.-H.; Bharj, S.S.;
Optically controlled GaAs MMIC switch using a MESFET as an optical detector
1990 / IEEE
By: Sturzebecher, D.; Herczfeld, P.R.; Madjar, A.; Paolella, A.;
Modeling MESFETs for intermodulation analysis of mixers and amplifiers
1990 / IEEE
By: Maas, S.A.; Neilson, D.;
A p-well GaAs MESFET technology
1990 / IEEE
By: Canfield, P.; Allstot, D.;
Monolithic Ka band VCO using quarter micron GaAs MESFETs and integrated high-Q varactors
1990 / IEEE
By: Benedek, M.; Sweeney, C.; McDermott, M.G.; Dawe, G.;
GaAs IC fabrication with MOSIS-a user's perspective
1990 / IEEE
By: Butner, S.E.; Long, S.I.;
The potential of p-well GaAs MESFET technology for precision integrated circuits
1990 / IEEE
By: Canfield, P.C.; Allstot, D.J.;
Minimum-size effects in asymmetric tilt-angle-implanted LDD-WN/sub x/-GaAs MESFET's
1991 / IEEE
By: Mikami, H.; Steiner, K.; Uchitomi, N.; Kitaura, Y.;
A 0.5-watt 47-GHz power amplifier using GaAs monolithic circuits
1992 / IEEE
By: Pande, K.; Hegazi, G.; Pages, P.; Ghahremani, M.; Phelleps, F.; Rice, P.; Cornfeld, A.; Chang, E.;
Ion-implanted In/sub (x)/Ga/sub (1-x)/As MESFET's on GaAs substrate for low-cost millimeter-wave IC application
1992 / IEEE
By: Feng, M.; Lau, C.-L.;
Proton and heavy ion upsets in GaAs MESFET devices
1991 / IEEE
By: Abdel-Kader, W.G.; Tran, L.; Weatherfold, T.R.; McNulty, P.J.; Stapor, W.J.; McMorrow, D.; Langworthy, J.B.; Petersen, E.L.;
A GaAs SONET framer IC for broadband subscriber loop applications
1990 / IEEE
By: Kong, D.T.;
Ultra low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications
1992 / IEEE
By: Feng, M.; Neidhard, R.; Kruse, J.; Laskar, J.;
A class of monolithic HBT multipliers
1991 / IEEE / 0-87942-591-1
By: Farris, A.E.; Allen, B.R.; Claxton, K.Z.; Ip, K.T.; Perry, C.B.;
Optical response of the GaAs MESFET at microwave frequencies and applications
1991 / IEEE / 0-87942-591-1
By: Herczfeld, P.R.; Paolella, A.; Higgins, T.; Madjar, A.;
A 0.2 mu m GaAs MESFET technology for 10 Gb/s digital and analog ICs
1991 / IEEE / 0-87942-591-1
By: Asai, K.; Kikuchi, H.; Ohhata, M.; Yamane, Y.; Imai, Y.;
A highly compact, wideband GaAs MESFET X-Ku band receiver MMIC
1991 / IEEE / 0-87942-591-1
By: Aust, M.V.; Andrews, S.S.; Yang, D.C.; Lin, T.S.; Dow, G.S.; Yonaki, J.; Ton, T.N.;
A high power K/Ka-band monolithic T/R switch
1991 / IEEE / 0-7803-0087-4
By: Bernkopf, P.; Bertrand, A.; Schindler, M.;
A class of monolithic HBT multipliers
1991 / IEEE / 0-7803-0087-4
By: Farris, A.E.; Allen, B.R.; Claxton, K.S.; Ip, K.T.; Perry, C.B.;
10-Gbit/s GaAs MESFET IC's for ultra high-speed transmission systems
1990 / IEEE
By: Ohhata, M.; Togashi, M.; Yamane, Y.; Suzuki, M.; Ino, M.; Kindoh, H.; Murata, K.;
Accurate timing simulation of gallium arsenide circuits
1991 / IEEE / 0-7803-0050-5
By: Bernhardt, B.A.; Sobelman, G.E.;
An ultra-broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system
1992 / IEEE
By: Shimura, T.; Miyashita, M.; Yamamoto, K.; Maemura, K.; Nogami, M.; Mitsui, Y.; Kitayama, T.; Motoshima, K.;
An ultra broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system
1992 / IEEE / 0-7803-0677-5
By: Kitayama, T.; Maemura, K.; Miyashita, M.; Mitsui, Y.; Yamamoto, K.; Motoshima, K.; Nogami, M.; Shimura, T.;
GaAs monolithic image rejection down-converter for point-to-multipoint communication systems
1992 / IEEE / 0-7803-0677-5
By: Bonato, G.L.; Boveda, A.;
A Ku band converter IC
1992 / IEEE / 0-7803-0677-5
By: Yoshida, S.; Miya, T.; Kaneko, T.;
Circuit techniques for efficient linearised GaAs MMIC's
1992 / IEEE / 0-7803-0677-5
By: Haigh, D.G.;
An ultra broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system
1992 / IEEE / 0-7803-0611-2
By: Mitsui, Y.; Yamamoto, K.; Maemura, K.; Miyashita, M.; Shimura, T.; Kitayama, T.; Motoshima, K.; Nogami, M.;
GaAs monolithic image rejection down-converter for point-to-multipoint communication systems
1992 / IEEE / 0-7803-0611-2
By: Boveda, A.; Bonato, G.L.;
A GaAs MESFET 7 Gb/s dynamic decision circuit IC
1988 / IEEE
By: Gilbert, J.; Chen, A.D.M.; Bayruns, R.J.; Wang, J.; Goyal, R.;
A 3 bit K/Ka band MMIC phase shifter
1988 / IEEE
By: Schindler, M.J.; Miller, M.E.;
Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's
1993 / IEEE
By: Johnson, N.P.; Beaumont, S.P.; Wilkinson, C.D.W.; Thayne, I.G.; Adams, J.A.; Stanley, C.R.; Kean, A.K.;
X-band low phase distortion MMIC power limiter
1993 / IEEE
By: Gayral, M.; Dienot, J.; Parra, T.; Graffeuil, J.; Sautereau, J.; Pouysegur, M.;
A complete 400-Mb/s burst-mode data OEIC receiver
1993 / IEEE
By: Taylor, S.S.; Bendett, M.; Mactaggart, I.R.;
2.5 Gb/s laser-driver GaAS IC
1993 / IEEE
By: Riishoj, J.;
X-band thin film acoustic filters on GaAs
1993 / IEEE
By: Crawford, J.D.; Stokes, R.B.;
Quarter, half, and one watt wideband millimeter-wave MMIC amplifiers
1992 / IEEE / 0-7803-0773-9
By: Goldfarb, M.; Bernkopf, P.; Erfany, B.;
Transimpedance amplifier design and performance for high bit rate optical fiber local loop networks
1992 / IEEE / 0-7803-0773-9
By: Christou, A.; Turner, J.; Stathaki, E.; Perantinos, G.; Papavassiliou, C.; Halkias, G.;
A complete 400 Mb/s burst-mode data OEIC receiver
1992 / IEEE / 0-7803-0773-9
By: Bendett, M.; Mactaggart, R.; Taylor, S.;
An MMIC linearized amplifier using active feedback
1993 / IEEE / 0-7803-1322-4
By: Pedro, J.C.; Perez, J.;
Miniaturized low noise variable MMIC amplifiers with low power consumption for L-band portable communication applications
1993 / IEEE / 0-7803-1322-4
By: Hara, S.; Yoshimasu, T.; Tsukao, T.; Yamada, A.; Osato, K.;
A 0.6-watt U-band monolithic MESFET power amplifier
1993 / IEEE / 0-7803-1209-0
By: Ghahremani, M.; Adair, J.; Rice, P.; Singer, J.; Phelleps, F.; Pande, K.; Ho, T.;
An MMIC linearized amplifier using active feedback
1993 / IEEE / 0-7803-1209-0
By: Perez, J.; Pedro, J.C.;
A monolithic dielectrically stabilized voltage controlled oscillator for the millimeter wave range
1993 / IEEE / 0-7803-1209-0
By: Guttich, U.; Schmidt, L.-P.; Dieudonne, J.-M.;
A novel high-voltage high-speed MESFET using a standard GaAs digital IC process
1994 / IEEE
By: Salama, C.A.T.; Mok, P.K.T.;
Prospects of gigascale integration (GSI) beyond 2003
1993 / IEEE / 0-7803-0987-1
By: Agrawal, B.; De, V.K.; Meindl, J.D.;
High-performance GaAs switch IC's fabricated using MESFET's with two kinds of pinch-off voltages and a symmetrical pattern configuration
1994 / IEEE
By: Sawai, T.; Yamada, T.; Uda, H.; Harada, Y.; Nogawa, K.;
Computationally efficient and accurate capacitance model for the GaAs MESFET for microwave nonlinear circuit design
1994 / IEEE
By: Al-Daas, M.; Mezher, K.; Tellez, J.R.;
High-efficiency monolithic GaAs power MESFET amplifier operating with a single low voltage supply for 1.9-GHz digital mobile communication applications
1994 / IEEE / 0-7803-1778-5
By: Nagaoka, M.; Yoshimura, M.; Uchitomi, N.; Kitaura, Y.; Ishida, K.; Inoue, T.; Tanabe, Y.; Takagi, E.; Kayano, H.; Obayashi, S.; Kawakyu, K.;
Design of high-performance power-distributed amplifier using Lange couplers
1994 / IEEE
By: Paoloni, C.; D'Agostino, S.;
Monolithic narrow-band filter using ultrahigh-Q tunable active inductors
1994 / IEEE
By: Robertson, I.D.; Lucyszyn, S.;
High-efficiency low adjacent channel leakage GaAs power MMIC for 1.9 GHz digital cordless phones
1994 / IEEE
By: Fujimoto, H.; Kunihisa, T.; Yokoyama, T.; Ishikawa, O.; Ikeda, H.; Ishida, K.; Takehara, H.;
A 20 GHz 8 bit multiplexer IC implemented with 0.5 /spl mu/m WN/sub x//W-gate GaAs MESFET's
1994 / IEEE
By: Suzuki, T.; Matsunaga, T.; Terada, T.; Ishida, K.; Kitaura, Y.; Ikeda, Y.; Seshita, T.; Wakimoto, H.; Uchitomi, N.;
Single event upsets in gallium arsenide dynamic logic
1994 / IEEE
By: Fouts, D.J.; Campbell, A.B.; Melinger, J.S.; McMorrow, D.; Weatherford, T.;
Microwave transconductance amplifiers and circuits using triquint 0.5 /spl mu/ MESFET devices
1993 / IEEE / 0-7803-1760-2
By: Wai Ho; Mokari, M.E.;
Efficient computer-aided design of microwave oscillators
1993 / IEEE / 0-7803-1760-2
By: Yongnan Xuan;
Gallium arsenide joins the giants
1995 / IEEE
By: Deyhimy, I.;
Mechanical reliability effects of back-grinding upon GaAs LSI chips
1993 / IEEE / 0-7803-0794-1
By: Nishiguchi, M.; Nishizawa, H.; Goto, N.;
Timing models for gallium arsenide direct-coupled FET logic circuits
1995 / IEEE
By: Kayssi, A.I.; Sakallah, K.A.;

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