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Topic: Junctions

Results

New developments for the improvement of high voltage rectification with silicon series string

1964 / IEEE
By: Schuler, Chet;

Variable radix multistable integrated circuits

1974 / IEEE
By: Abraham, George;

A synthesizer of inductive assertions

1975 / IEEE
By: German, S.M.; Wegbreit, B.;

Property extraction in well-founded property sets

1975 / IEEE
By: Wegbreit, B.;

Awards: IEEE major medalists for 1980

1980 / IEEE

Consumer telephone III: Mixing new with old: An interfacing scheme for analog and digital systems features modular architecture

1980 / IEEE
By: Nilsson, Bo; Svala, C. Gunnar;

Josephson LSI circuits

1981 / IEEE
By: Faris, S. M.;

A low-cost microprocessor-based Deep-Level Transient Spectroscopy (DLTS) system

1981 / IEEE
By: Brown, W.D.; Sexton, F.W.;

Computer-aided prediction of high-frequency performance limits in silicon bipolar integrated circuits

1982 / IEEE
By: Burns, J. L.; Choma, J.;

An efficient approach to the computation of analytic, pseudo analytic sensitivities and noise in an APL general purpose CAD program

1982 / IEEE
By: Zein, D. A.; Chang, C. S.;

An electronic circuit model of nerve axon for signal transmission

1985 / IEEE
By: Matsuyama, K.; Takemae, T.;

Measured flatness of microwave-induced steps at Josephson tunnel junctions with near-zero-current bias

1982 / IEEE
By: Hinken, J.H.; Brunk, G.E.W.; Guang-Ying Cui; Niemeyer, J.;

RCG cable analysis of a dendritic tree based on Rail's idealized model

1983 / IEEE
By: Deutsch, S.;

Techniques for measuring the effective source reflection coefficient of two-resistor power splitters

1987 / IEEE
By: Moyer, R.D.;

A new two-port scattering matrix measurement technique using a sliding load

1987 / IEEE
By: Kaliouby, Leopoldine; Bosisio, Renato G.;

Considerations for the design of an SRAM with SOI technology

1987 / IEEE
By: Houston, T.W.;

Bidirectional blocking junctions in SOI

1987 / IEEE
By: MacIver, B.A.; Valeri, S.J.; Jain, K.C.;

A new six-port calibration method using four standards and avoiding singularities

1987 / IEEE
By: Bosisio, Renato G.; Ghannouchi, Fadhel M.;

Substrate Gating of Contact Resistance in Graphene Transistors

2011 / IEEE
By: Yang Sui; Low, T.; Berdebes, D.; Lundstrom, M.S.; Appenzeller, J.;

Solution-Processed Memristive Junctions Used in a Threshold Indicator

2011 / IEEE
By: Tse Nga Ng; Arias, A.C.; Russo, B.;

Compact Modeling of Partially Depleted Silicon-on-Insulator Drain-Extended MOSFET (DEMOSFET) Including High-Voltage and Floating-Body Effects

2011 / IEEE
By: Agarwal, T.K.; Kumar, M.J.; Subramanian, V.; Trivedi, A.R.;

Analysis and Design of Hanle-Effect Spin Transistors at 300 K

2011 / IEEE
By: Sugahara, S.; Takamura, Y.;

Technology, Capabilities, and Performance of Low Power Terahertz Sources

2011 / IEEE
By: Chattopadhyay, G.;

Effect of Magnetic Tunneling Junction Sensor Size on Ferromagnetic Interlayer Coupling

2011 / IEEE
By: Shuxia Wang; Guangli Liu; Ching Tsang; Weidong Li; Simon Liao; Yimin Hsu; Chando Park; Zheng Gao;

Fabrication of Perpendicular MgO-Based Magnetic Tunnel Junctions With TbFe/FeCo Electrodes

2011 / IEEE
By: Jong-Ching Wu; Jin-Zhen Liu; Jia-Hua Lin; Jia-Mou Lee; Ching-Ming Lee; Lin-Xiu Ye; Te-Ho Wu;

Drain-Dependence of Tunnel Field-Effect Transistor Characteristics: The Role of the Channel

2011 / IEEE
By: Mallik, A.; Chattopadhyay, A.;

UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFET

2011 / IEEE
By: Tanaka, H.; Ohi, A.; Toyoda, Y.; Sumida, H.; Nishimura, T.; Ng, J.C.W.; Sin, J.K.O.; Ueno, K.;

Improved Calculation of Charge Collection Probability From Within the Junction Well

2011 / IEEE
By: Radhakrishnan, K.; Kurniawan, O.; Tan, C.C.; Ong, V.K.S.;

Simultaneous Reverse Body and Negative Word-Line Biasing Control Scheme for Leakage Reduction of DRAM

2011 / IEEE
By: Bai-Sun Kong; Young-Hyun Jun; Dong-Su Lee;

A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS

2011 / IEEE
By: Yaming Zhang; Ruonan Han; O, K.K.; Brown, E.; Knap, W.; Videlier, H.; Coquillat, D.;

High Spin-Torque Diode Sensitivity in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions Under DC Bias Currents

2011 / IEEE
By: Yakata, S.; Kubota, H.; Nozaki, T.; Seki, T.; Ando, K.; Maehara, H.; Suzuki, Y.; Ishibashi, S.; Yuasa, S.; Fukushima, A.;

Structural Control of Domain Wall Depinning Fields in Nanostructured Fe Crossbar Patterns

2011 / IEEE
By: Tanaka, T.; Noda, K.; Ito, K.; Takashima, T.; Matsuyama, K.;

Magnetic Tunnel Junction Logic Architecture for Realization of Simultaneous Computation and Communication

2011 / IEEE
By: Lyle, A.; Jian-Ping Wang; Lilja, D.; Yao, X.; Glass, B.; Harms, J.; Patil, S.;

Picotesla Magnetic Sensors for Low-Frequency Applications

2011 / IEEE
By: Russek, S.E.; Xiaolu Yin; Liou, S.H.; Shen, J.; Heindl, R.; Yuan, L.; Pappas, D.P.; Moreland, J.; Da Silva, F.C.S.;

Extension of the ADC Charge-Collection Model to Include Multiple Junctions

2011 / IEEE
By: Edmonds, L.D.;

Voltage-Driven Versus Current-Driven Spin Torque in Anisotropic Tunneling Junctions

2011 / IEEE
By: Manchon, A.;

Single Carbon Nanotube Schottky Diode Microwave Rectifiers

2011 / IEEE
By: Fuhrer, M.S.; Anlage, S.M.; Cobas, E.D.;

Nanoelectronic RF Josephson Devices

2011 / IEEE
By: Russer, J.A.; Russer, P.;

Responsivity and Noise of Self-Mixing Photodetection Schemes

2011 / IEEE
By: Donati, S.;

Impact of Well Structure on Single-Event Well Potential Modulation in Bulk CMOS

2011 / IEEE
By: Holman, W.T.; Witulski, A.F.; Ahlbin, J.R.; Atkinson, N.M.; Bhuva, B.L.; Gaspard, N.J.; Massengill, L.W.; Loveless, T.D.;

RHBD Bias Circuits Utilizing Sensitive Node Active Charge Cancellation

2011 / IEEE
By: Kauppila, J.S.; Armstrong, S.E.; Blaine, R.W.; Massengill, L.W.; Holman, W.T.; Olson, B.D.; Atkinson, N.M.;

Conductivity Discontinuity in Type of Current-Perpendicular-to-Plane Nanometer Device

2011 / IEEE
By: Ono, S.; Takeuchi, I.; Horikiri, K.; Shiiki, K.;

Thin-Film Thermocouple Array for Time-Resolved Local Temperature Mapping

2011 / IEEE
By: Qing Chen; Weiqiang Sun; Haixiao Liu; Shengyong Xu;

Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory

2011 / IEEE
By: Van Houdt, J.; Van den bosch, G.; Van Aerde, S.; Richard, O.; Douhard, B.; Vrancken, C.; Debusschere, I.; Paraschiv, V.; De Keersgieter, A.; Breuil, L.; Cacciato, A.; Arreghini, A.; Blomme, P.; Kar, G.S.;

Vertically Integrated Unidirectional Biristor

2011 / IEEE
By: Jae-Sub Oh; Sungho Kim; Sung-Jin Choi; Dong-Il Moon; Yang-Kyu Choi; Young-Su Kim;

Effects of Magnetic Contacts on Magnetoresistance in FM/Graphene/FM Lateral Junctions

2011 / IEEE
By: Yamamura, A.; Sato, R.; Hiraiwa, T.; Itoh, H.; Honda, S.; Inoue, J.;

Detection of Local Oersted Field Generated at the Junction Between Ferromagnetic Nanowire and Electrode

2011 / IEEE
By: Kyoung-Woong Moon; Sug-Bong Choe; Kyung-Ho Shin; Kungwon Rhie; Jae-Chul Lee;

Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique

2011 / IEEE
By: Che-Wei Lin; Kuo, F.-M.; Shi, J.-W.; Sheu, J.-K.; Yan, L.-J.; Wei Chen;

Output Signal Prediction of an Open-Ended Coaxial Probe When Scanning Arbitrary-Shape Surface Cracks in Metals

2012 / IEEE
By: Maftooli, H.; Moini, R.; Sadeghi, S.H.H.; Karami, H.R.;

Gain and Fan-Out in a Current-Field Driven Spin Transistor With an Assisting AC Magnetic Field

2012 / IEEE
By: Suzuki, Y.; Yuasa, S.; Fukushima, A.; Kubota, H.; Nozaki, T.; Konishi, K.;

Understanding the Failure Mechanisms of Protection Diodes During System Level ESD: Toward Repetitive Stresses Robustness

2012 / IEEE
By: Anceau, C.; Perdreau, R.; Bouyssou, E.; Tremouilles, D.; Diatta, M.; Bafleur, M.;

Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

2012 / IEEE
By: Kimoto, T.; Suda, J.; Gan Feng;

A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs

2012 / IEEE
By: Xinyu Liu; Zhi Jin; YongBo Su; Danyu Wu; Yuxiong Cao; Ji Ge;

Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness

2012 / IEEE
By: Hongkai Lai; Cheng Li; Wei Huang; Zheng Wu; Songyan Chen;

Betavoltaic Performance of Radiation-Hardened High-Efficiency Si Space Solar Cells

2012 / IEEE
By: Chrisey, D.B.; Brand, P.J.; Ruqiang Bao;

Simulation and Design Methodology for Hybrid SET-CMOS Integrated Logic at 22-nm Room-Temperature Operation

2012 / IEEE
By: Drouin, D.; Beauvais, J.; Beaumont, A.; Parekh, R.;

Effect of Band-to-Band Tunneling on Junctionless Transistors

2012 / IEEE
By: Pandey, R.K.; Bajaj, M.; Gundapaneni, S.; Kottantharayil, A.; Ganguly, S.; Murali, K.V.R.M.;

Comprehensive and Accurate Parasitic Capacitance Models for Two- and Three-Dimensional CMOS Device Structures

2012 / IEEE
By: Boeuf, F.; Ghibaudo, G.; Lacord, J.;

Electrical Characterization of a Magnetic Tunnel Junction Current Sensor for Industrial Applications

2012 / IEEE
By: Ramirez, D.; Sanchez, J.; Freitas, P.P.; Ferreira, R.; Cardoso, S.; Lopes, A.; Ravelo, S.I.;

Theoretical Study of Point-Contact Andreev Reflection Spectroscopy for Ferromagnetic Metal/Insulator/D-Wave Superconductor Junctions

2012 / IEEE
By: Ohtori, H.; Imamura, H.;

Enhanced Recovery Speed of Nanostructured ZnO Photodetectors Using Nanobelt Networks

2012 / IEEE
By: Jr-Hau He; Miin-Jang Chen; Der-Hsien Lien; Chia-Yang Hsu; Ming-Wei Chen; Cheng-Ying Chen;

Novel Package of SiC-JFET for a Switching Pulse Supply Operating at 1 MHz for an Induction Synchrotron

2012 / IEEE
By: Wake, M.; Ise, K.; Okamura, K.; Takayama, K.; Osawa, Y.; Takaki, K.;

Improvement of surface flashover characteristics about 45� insulator configuration in vacuum by a new organic insulation structure

2011 / IEEE
By: Fengyan Ni; Tuo Zhang; Shengtao Li; Qifeng Huang; Jianying Li;

Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures

2012 / IEEE
By: Niwa, H.; Kimoto, T.; Suda, J.; Gan Feng;

N-Channel Dual-Workfunction-Gate MOSFET for Analog Circuit Applications

2012 / IEEE
By: Yeong-Seuk Kim; Ki-Ju Baek; Kee-Yeol Na;

Junction Temperature Investigations Based on a General Semi-analytical Formulation of Forward Voltage of Power Diodes

2012 / IEEE
By: Khatir, Z.;

Hardening Principles and Characterization of an Optocoupler Including a Vertical Cavity Surface Emitting Laser

2012 / IEEE
By: Del Vecchio, P.; Gilard, O.; Quadri, G.; Bechou, L.; Moglia, R.;

2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors

2012 / IEEE
By: Huby, N.; Scarpa, G.; Tallarida, G.; Lugli, P.; Guziewicz, E.; Arcari, M.; Godlewski, M.; Krajewski, T.A.;

Barrier Breakdown Mechanisms in MgO-Based Magnetic Tunnel Junctions and Correlation With Low-Frequency Noise

2012 / IEEE
By: Sousa, R.C.; Amara, S.; Dieny, B.; Baraduc, C.; Bea, H.;

Perpendicular Magnetic Tunnel Junctions Having CoFeB/CoPt Alloy Layers

2012 / IEEE
By: Gyung-Min Choi; Kyung-Ho Shin; Byoung-Chul Min;

Spin Torque Diode Spectroscopy of Quantized Spin Wave Excited in a Magnetic Tunnel Junction

2012 / IEEE
By: Kubota, H.; Fukushima, A.; Yamaguchi, A.; Yuasa, S.;

Statistical Variance in Switching Probability of Spin-Torque Switching in MgO-MTJ

2012 / IEEE
By: Yuasa, S.; Kubota, H.; Yakushiji, K.; Seki, T.; Fukushima, A.; Ando, K.;

Linearization and Field Detectivity in Magnetic Tunnel Junction Sensors Connected in Series Incorporating 16 nm-Thick NiFe Free Layers

2012 / IEEE
By: Ferreira, R.; Cardoso, S.; Lopes, A.; Gameiro, L.; Janeiro, R.J.; Freitas, P.P.; Paz, E.;

Spin-Torque Driven Switching Probability Density Function Asymmetry

2012 / IEEE
By: Wang, K.L.; Yisong Zhang; Hui Zhao; Jian-Ping Wang; Amiri, P.K.; Krivorotov, I.N.; Hongwen Jiang; Langer, J.; Katine, J.A.;

Study of Basic Effects of HPM Pulses in Digital CMOS Integrated Circuit Inputs

2012 / IEEE
By: Holloway, M.A.; Rodgers, J.C.; Seekhao, N.; Dilli, Z.;

Magnetic Tunnel Junctions Based on Out-of-Plane Anisotropy Free and In-Plane Pinned Layer Structures for Magnetic Field Sensors

2012 / IEEE
By: Stobiecki, T.; Wrona, J.; Wisniowski, P.; Freitas, P.P.; Cardoso, S.;

A Matched-Pulse Approach for Soft-Fault Detection in Complex Wire Networks

2012 / IEEE
By: Abboud, L.; Pichon, L.; Cozza, A.;

A Decomposition Method for Nonlinear Parameter Estimation in TRANSCEND

2012 / IEEE
By: Biswas, G.; Bregon, A.; Pulido, B.;

SET Characterization and Mitigation in 65-nm CMOS Test Structures

2012 / IEEE
By: Rezgui, S.; Tien, J.; Won, R.;

Boron Composition Dependence of Magnetic Anisotropy and Tunnel Magnetoresistance in MgO/CoFe(B) Based Stack Structures

2012 / IEEE
By: Ikeda, S.; Ohno, H.; Matsukura, F.; Gan, H.; Sato, H.; Mizunuma, K.; Miura, K.; Yamanouchi, M.; Koizumi, R.;

Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

2012 / IEEE
By: Jurczak, M.; Mendes Almeida, L.; Nicoletti, T.; Aoulaiche, M.; Simoen, E.; Groeseneken, G.; Blomme, P.; Veloso, A.;

Back-Side Readout Silicon Photomultiplier

2012 / IEEE
By: Holland, S.E.; Woon-Seng Choong;

A Subthreshold Swing Model for Thin-Film Fully Depleted SOI Four-Gate Transistors

2012 / IEEE
By: Khan, M.Z.R.; Hossain, M.I.; Sayed, S.;

Calculation of the Nonlinear Junction Temperature for Semiconductor Devices Using Linear Temperature Values

2012 / IEEE
By: Rajaie, A.; Khorshid, A.; Bayba, A.J.; Darwish, A.M.; Hung, H.A.;

Thermal Stability of Silicon Carbide Power Diodes

2012 / IEEE
By: Civrac, G.; Morel, H.; Raynaud, C.; Buttay, C.; Morel, F.; Locatelli, M.-L.;

Environment Exposure Tests of Electron-Emitting Film for Spacecraft Charging Mitigation

2012 / IEEE
By: Toyoda, K.; Iwata, M.; Sumida, T.; Khan, A.R.; Fujita, T.; Mengu Cho;

Integration of Series-Connected On-Chip Solar Battery in a Triple-Well CMOS LSI

2012 / IEEE
By: Horiguchi, F.;

Planar GeOI TFET Performance Improvement With Back Biasing

2012 / IEEE
By: Matheu, P.; Tsu-Jae King Liu; Jacobson, Z.A.; Byron Ho;

Novel Modeling and Calibration Approach for Multiport Receivers Mitigating System Imperfections and Hardware Impairments

2012 / IEEE
By: Helaoui, M.; Hasan, A.;

Formulation for Complete and Accurate Calibration of Six-Port Reflectometer

2012 / IEEE
By: Haddadi, K.; Lasri, T.;

DC Compact Model for SOI Tunnel Field-Effect Transistors

2012 / IEEE
By: Rao, V.R.; Nayak, K.; Bhushan, B.;

21-kV SiC BJTs With Space-Modulated Junction Termination Extension

2012 / IEEE
By: Okuda, T.; Miyake, H.; Suda, J.; Kimoto, T.; Niwa, H.;

A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices

2012 / IEEE
By: Dae-Gyu Park; Zhibin Ren; Young-Hee Kim; Kulkarni, P.; Chan, K.; Oldiges, P.; Jin Cai; Muralidhar, R.; Lauer, I.; Shahidi, G.;

Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT

2012 / IEEE
By: Mihaila, A.; Nistor, I.; Bauer, F.; Udrea, F.; Antoniou, M.;

Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator

2012 / IEEE
By: Navarro, C.; Rodriguez, N.; Cristoloveanu, S.; Faynot, O.; Andrieu, F.; Gamiz, F.;

Behavioral Study of Single-Event Burnout in Power Devices for Natural Radiation Environment Applications

2012 / IEEE
By: Tasselli, J.; Arbess, H.; Morancho, F.; Toulon, G.; Austin, P.; Zerarka, M.;

Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches

2012 / IEEE
By: Ji-Chul Jung; Taeho Moon; Sangsig Kim; Sang-Mo Koo; Youngin Jeon; Yong Han;

Simultaneous and Sequential Radiation Effects on NPN Transistors Induced by Protons and Electrons

2012 / IEEE
By: Xingji Li; Jianqun Yang; Hongbin Geng; Erming Rui; Chaoming Liu;

Investigation on Time- and Frequency-Domain Responses of Some Complex Composite Structures in the Presence of High-Power Electromagnetic Pulses

2012 / IEEE
By: Ming-Da Zhu; Wen-Yan Yin; Wei Luo; Jian-Yao Zhao; Jun-Fa Mao;

Static and Dynamic Modeling of Single-Electron Memory for Circuit Simulation

2012 / IEEE
By: Bounouar, M.; Guilmain, M.; Beaumont, A.; Wei Xuan; Baboux, N.; Calmon, F.; Drouin, D.; Etzkorn, J.;

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