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Topic: Ingaasp

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Variation of Relative Intensity Noise With Optical Power in InGaAsP Semiconductor Optical Amplifier

2012 / IEEE
By: Takeuchi, N.; Yamada, M.; Kuwamura, Y.; Sakumoto, K.;

SOI platform and III-V integrated active photonic device by direct bonding for data communication

2012 / IEEE / 978-1-4673-0742-0
By: Linghan Li; Nakano, Y.; Sugiyama, M.; Higurashi, E.; Higo, A.;

1480nm InGaAsP LOC broad-area-lasers with >18W pulsed output power at 20°C

2013 / IEEE
By: Fendler, D.; Grote, N.; Passenberg, W.; Rehbein, W.; Spiegelberg, M.; Mohrle, M.;

Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs

2013 / IEEE
By: Shimogaki, Yukihiro; Nakano, Yoshiaki; Sugiyama, Masakazu;

MBE-grown InGaP/GaAs/InGaAsP triple junction solar cells fabricated by advanced bonding technique

2014 / IEEE
By: Sugaya, Takeyoshi; Makita, Kikuo; Niki, Shigeru; Okano, Yoshinobu; Matsubara, Koji; Oshima, Ryuji; Mochizuki, Toru; Takeda, Akihiro; Mizuno, Hidenori;

Electrooptic sampling of a packaged high-speed GaAs integrated circuit

1988 / IEEE
By: Cook, T.B.; Heutmaker, M.S.; Tucker, R.S.; Wiesenfeld, J.M.; Bosacchi, B.;

Electrical feedback and its network analysis for linewidth reduction of a semiconductor laser

1988 / IEEE
By: Ohtsu, M.; Tabuchi, N.;

An 8 mm length nonblocking 4*4 optical switch array

1988 / IEEE
By: Nakamura, H.; Inoue, H.; Chinone, N.; Katsuyama, T.; Sasaki, Y.; Morosawa, K.;

The design and realization of a high reliability semiconductor laser for single-mode fiber-optical communication links

1988 / IEEE
By: Gibb, R.M.; Davies, I.G.A.; Goodwin, A.R.; Murphy, R.H.;

High speed single frequency laser diodes and wide bandwidth detectors for multi-Gb/s fiber-optic communication systems

1988 / IEEE
By: Fujita, S.; Yamaguchi, M.; Torikai, T.; Mito, I.; Kobayashi, K.; Henmi, N.;

Photoelastic effects on the emission patterns of InGaAsP ridge-waveguide lasers

1989 / IEEE
By: Samson, L.; Berger, J.; Champagne, A.; Glinski, J.M.; Maciejko, R.;

Group delay dispersion measurements in InGaAsP 1.3- mu m optical amplifiers

1989 / IEEE
By: Zenteno, L.;

Dispersion and noise of 1.3 mu m multimode lasers in microwave digital systems

1989 / IEEE
By: Bosch, F.; Hakki, B.W.; Lumish, S.;

Frequency-dependent and frequency-independent nonlinear characteristics of a high-speed laser diode

1988 / IEEE
By: Way, W.I.;

Optoelectronic integration: A technology for future telecommunication systems

1989 / IEEE
By: Leheny, R.F.;

Single- and multiple-wavelength operation of acoustooptically tuned semiconductor lasers at 1.3 mu m

1989 / IEEE
By: Cheung, K.-W.; Coquin, G.; Choy, M.M.;

Frequency-locking of a 1.3 mu m DFB laser using a miniature argon glow lamp

1989 / IEEE
By: Chung, Y.C.;

Biaxial stress effects on the TE/TM polarization switching of InGaAsP ridge-waveguide lasers

1989 / IEEE
By: Champagne, A.; Berger, J.; Maciejko, R.; Glinski, J.;

Repetition-rate dependence of gain compression in InGaAsP optical amplifiers using picosecond optical pulses

1989 / IEEE
By: Raybon, G.; Tucker, R.S.; Eisenstein, G.; Wiesenfeld, J.M.; Hansen, P.B.;

Temperature dependence of the bandwidth of buried heterostructure distributed feedback lasers

1989 / IEEE
By: Shen, T.M.; Wand, S.J.; Dutta, N.K.;

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

1990 / IEEE
By: Bennett, B.R.; Del Alamo, J.A.; Soref, R.A.;

Photovoltaic properties of 0.95-eV p-n InGaAsP homojunction solar cells prepared by liquid-phase epitaxy

1990 / IEEE
By: Chang, P.-T.; Shen, C.C.; Choi, K.-Y.;

Effects of gain ripples in semiconductor optical amplifiers on very high speed lightwave systems

1990 / IEEE
By: Zah, C.E.; Ma, K.B.; Iqbal, M.Z.; Cheung, N.K.; Lee, T.P.;

Method for setting the absolute frequency of a tunable, 1.5 mu m two-section DBR laser

1990 / IEEE
By: Koch, T.L.; Giles, C.R.;

Tapered waveguide InGaAs/InGaAsP multiple-quantum-well lasers

1990 / IEEE
By: Giles, C.R.; Oron, M.; Young, M.G.; Eisenstein, G.; Koren, U.; Koch, T.L.; Miller, B.I.;

Fast bistable wavelength switching characteristics in two-electrode distributed feedback laser

1990 / IEEE
By: Shoji, H.; Fujii, Y.; Arakawa, Y.;

Efficient linewidth reduction in conventional 1.5 mu m laser diodes by integration to a weakly coupled InGaAsP Bragg waveguide with low optical losses

1990 / IEEE
By: van der Hofstad, G.L.A.; DeCooman, B.C.; Baele, I.A.F.; Cnoops, J.M.H.; Scheepers, W.; Kuindersma, P.I.;

Intensity noise dependence on the injection current of laser diodes with optical feedback

1990 / IEEE
By: Ebeling, K.J.; Port, M.;

Ultralow chirp and high-speed 1.55 mu m multiquantum well lambda /4-shifted DFB lasers

1990 / IEEE
By: Nakano, H.; Tsuchiya, T.; Sasaki, S.; Uomi, K.; Chinone, N.;

InGaAsP DC-PBH semiconductor laser diode frequency response model

1990 / IEEE
By: De Salles, A.A.A.;

Detuning characteristics and conversion efficiency of nearly degenerate four-wave mixing in a 1.5- mu m traveling-wave semiconductor laser amplifier

1990 / IEEE
By: Mukai, T.; Saitoh, T.;

Corrugation-pitch-modulated MQW-DFB laser with narrow spectral linewidth (170 kHz)

1990 / IEEE
By: Harada, T.; Chinone, N.; Uomi, K.; Tsuchiya, T.; Okai, M.;

Distributed feedback laser diode and module for CATV systems

1990 / IEEE
By: Yamashita, J.; Kakimoto, S.; Nakajima, Y.; Sakakibara, Y.; Hatta, T.; Watanabe, H.; Takemoto, A.; Miyake, Y.;

FM response of InGaAsP buried heterostructure distributed feedback lasers and their applications in incoherent FSK systems

1990 / IEEE
By: Twu, Y.; Dutta, N.K.; Wang, Y.J.; Wang, S.-J.;

Reliability of optoelectronic devices for fiber optic communications

1990 / IEEE
By: Fern, C.; Lee, H.C.; Pendse, D.; Li, K.; Chiu, L.C.;

Monolithically integrated waveguide-MSM detector-HEMT amplifier receiver for long-waveguide lightwave systems

1991 / IEEE
By: Nguyen, C.; Bhat, R.; Chang, G.K.; Hong, W.-P.; Koza, M.;

Semiconductor photonic functional devices

1991 / IEEE
By: Kawaguchi, H.;

High-speed and low-relative-intensity noise 1.3 mu m InGaAsP semi-insulating buried crescent lasers

1991 / IEEE
By: Cheng, W.-H.; Bowers, J.E.; Mar, A.; Su, C.B.; Buehring, K.-D.; Renner, D.; Appelbaum, A.; Shin, S.;

Gain saturation coefficients of strained-layer multiple quantum-well distributed feedback lasers

1991 / IEEE
By: Yamamoto, N.; Takahata, K.; Yasaka, H.; Naganuma, M.;

High speed and low loss, bulk electroabsorption waveguide modulators at 1.3 mu m

1991 / IEEE
By: Maritan, C.M.; Prosyk, K.L.; Mak, G.; Rolland, C.; Puetz, N.;

THz optical-frequency conversion of 1 Gb/s-signals using highly nondegenerate four-wave mixing in an InGaAsP semiconductor laser

1991 / IEEE
By: Suzuki, A.; Shimizu, J.; Tomita, A.; Murata, S.;

lambda /4-shifted DFB laser/electroabsorption modulator integrated light source for multigigabit transmission

1992 / IEEE
By: Suzuki, M.; Matsushima, Y.; Yamamoto, S.; Taga, H.; Tanaka, H.;

Initial evaluation of commercially available InGaAsP DFB laser diodes for use in high-speed digital fiber optic transceivers

1990 / IEEE
By: Hendricks, H.D.; Cook, A.L.;

Optical transmitters and receivers for fast optoelectronics

1990 / IEEE
By: Elenkrig, B.B.;

5.5-mm long InGaAsP monolithic extended-cavity laser with an integrated Bragg-reflector for active mode-locking

1992 / IEEE
By: Miller, B.I.; Koren, U.; Raybon, G.; Hansen, P.B.; Young, M.G.; Alferness, R.C.; Burrus, C.A.; Chien, M.;

Hybrid-integrated 4*4 optical gate matrix switch using silica-based optical waveguides and LD array chips

1992 / IEEE
By: Ohmori, Y.; Terui, H.; Yamada, Y.; Kobayashi, M.; Himeno, A.; Yamada, M.;

High-speed, low-threshold InGaAsP semi-insulating buried crescent lasers with 22 GHz bandwidth

1992 / IEEE
By: Renner, D.; Agarwal, R.; Jiang, C.-L.; Cheng, W.-H.; Mar, A.; Huang, R.-T.; Wolf, D.; Bowers, J.E.;

Strain-induced performance improvements in long-wavelength, multiple-quantum-well, ridge-waveguide lasers with all quaternary active regions

1992 / IEEE
By: Makino, T.; Evans, J.D.; Thompson, D.A.; Simmons, J.G.; Puetz, N.;

Integrated four-wavelength DFB laser array with 10 Gb/s speed and 5 nm continuous tuning range

1992 / IEEE
By: Wang, L.A.; Bhat, R.; Iqbal, M.Z.; Lin, P.S.D.; Gozdz, A.S.; Lo, Y.H.;

Circular beam emission from 1.3 mu m InGaAsP strained-multiquantum-well lasers

1992 / IEEE
By: Makino, T.; Li, G.P.; Beckett, D.J.S.; Evans, J.;

An optical tap based on the twin waveguide laser-amplifier with asymmetric flared output waveguides

1992 / IEEE
By: Mace, D.A.H.; Singh, J.; Mudhar, P.S.;

InGaAsP electroabsorption modulator for high-bit-rate EDFA system

1992 / IEEE
By: Matsushima, Y.; Tanaka, H.; Suzuki, M.;

High power semiconductor laser injection-locking at 1.3 mu m

1992 / IEEE
By: Washington, M.A.; Tanbun-Ek, T.; Olsson, N.A.; Andrekson, P.A.;

Contribution to the growth of InP and InGaAsP optoelectronic device materials by atmospheric- and low-pressure MOVPE using tertiarybutylphosphine

1991 / IEEE / 0-87942-626-8
By: Gao, Y.; Mellet, R.; Ougazzaden, A.; Mircea, A.; Rao, E.V.K.;

Recent advances in dry etching processes for InP-based materials

1991 / IEEE / 0-87942-626-8
By: Niggebrugge, U.;

Negative electrical feedback grinrod external coupled cavity semiconductor laser

1990 / IEEE / 0-87942-556-3
By: Ye Peida; Li Ling; Zhang Jingping; Tao Shangping;

Low-threshold (3.2 mA per element) 1.3 mu m InGaAsP MQW laser array on a p-type substrate

1992 / IEEE
By: Yamashita, S.; Ono, Y.; Uomi, K.; Saitoh, K.; Tsuchiya, T.; Kawano, T.; Oka, A.;

Application of a lambda /4-shifted DFB laser/electroabsorption modulator monolithically integrated light source to single-chip pulse generator with variable repetition rate

1992 / IEEE
By: Tanaka, H.; Suzuki, M.; Matsushima, Y.;

Experimental verification of strain benefits in 1.5- mu m semiconductor lasers by carrier lifetime and gain measurements

1992 / IEEE
By: Osinski, J.S.; Zou, Y.; Crawford, F.D.; Sharfin, W.F.; Rideout, W.; Dapkus, P.D.; Grodzinski, P.;

Performance and reliability of InGaAsP superluminescent diode

1992 / IEEE
By: Kashima, Y.; Takano, H.; Matoba, A.;

Linear InGaAsP edge-emitting LED's for single-mode fiber communications

1992 / IEEE
By: Kashima, Y.; Takano, H.; Matoba, A.;

Low threshold tunable soliton source

1993 / IEEE
By: Cochlain, C.R.O.; Sherlock, G.; Mears, R.J.;

Selective TE-TM mode pumping efficiencies for ridge-waveguide lasers in presence of stress

1993 / IEEE
By: Champagne, A.; Golebiowski, A.; Maciejko, R.; Glinski, J.M.;

The effects of a detuned optical input on bistable laser diodes with inhomogeneous current injection

1993 / IEEE
By: Kikuchi, H.; Okada, M.; Fujikake, H.; Takizawa, K.;

An integrated, optically powered, optoelectronic 'smart' logic pixel for interconnection and computing applications

1993 / IEEE
By: Forrest, S.R.; Gardner, J.T.; Brown, J.J.;

New applications of a sinusoidally driven InGaAsP electroabsorption modulator to in-line optical gates with ASE noise reduction effect

1992 / IEEE
By: Tanaka, H.; Suzuki, M.; Matsushima, Y.; Edagawa, N.;

Recent progress in high performance InGaAsP optical amplifiers and multiple quantum well devices

1990 / IEEE
By: Spurdens, P.C.; Cooper, D.M.; Devlin, W.J.; Elton, D.J.; Regnault, J.C.; Bagley, M.; Sherlock, G.;

High-gain, high-power 1.3 mu m compressive strained MQW optical amplifier

1993 / IEEE
By: Amano, T.; Ueki, M.; Magari, K.; Suzuki, Y.; Yamamoto, M.; Mikami, O.;

Selective regrowth of a wide-bandwidth 1.3 mu m integrated lossless tap and optical preamplifier

1993 / IEEE
By: Powazinik, W.; Abdalla, M.; Schlafer, J.; Rideout, W.; Eichen, E.; Meland, E.; Niland, W.; Russell, W.;

High speed 1.3 mu m InGaAsP Fabry-Perot lasers for digital and analog applications

1993 / IEEE
By: Cheng, W.-H.; Su, C.B.; Huang, R.T.; Bowers, J.E.; Mar, A.;

Simultaneous operation of ten-channel tunable DFB laser arrays using strained-InGaAsP multiple quantum wells

1993 / IEEE
By: Sato, K.; Sekine, S.; Kondo, Y.; Yamamoto, M.;

Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m

1993 / IEEE
By: Yellen, S.L.; Waters, R.G.; Harding, C.M.; Bystrom, K.J.; Soltz, R.; Guido, T.S.; Serreze, H.B.; Baumann, J.A.; Dalby, R.J.; Shepard, A.H.;

High-speed, low-threshold InGaAsP semi-insulating buried crescent lasers

1992 / IEEE / 0-7803-0522-1
By: Agarwal, R.; Jiang, C.-L.; Cheng, W.-H.; Wolf, D.; Renner, D.; Bowers, J.; Huang, R.-T.; Mar, A.;

High performance InGaAs/InAlAs MQW laser diodes grown by gas source molecular beam epitaxy

1992 / IEEE / 0-7803-0522-1
By: Kawamura, Y.; Wakatsuki, A.; Uenohara, H.; Iwamura, H.;

Low threshold 1.5 mu m quaternary quantum well lasers grown by MOCVD

1992 / IEEE / 0-7803-0522-1
By: Zou, Y.; Osinski, J.S.; Grodzinski, P.; Dapkus, P.D.; Mathur, A.;

Low threshold, electrically injected InGaAsP (1.3 mu m) vertical cavity lasers on GaAs substrates

1993 / IEEE
By: Yang, L.; Dudley, J.J.; Mirin, R.; Babic, D.I.; Miller, B.I.; Bowers, J.E.; Hu, E.L.; Reynolds, T.; Ram, R.J.;

Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers

1993 / IEEE
By: Baraff, G.A.; Henry, C.H.; Gershoni, D.;

Determination of wavelength dependence of the reflectivity at AR coated diode facets

1993 / IEEE
By: Wu, L.; Luo, B.; Lu, Y.; Chen, J.;

Pump-probe spectroscopy in potassium using an AlGaAs laser and the second-harmonic generation of an InGaAsP laser for frequency stabilization and linking

1994 / IEEE
By: Ohtsu, M.; Akulshin, A.M.; Wang, W.;

Wavelength-independent output power from an injection-tunable DBR laser

1994 / IEEE
By: Jansen, E.J.; Kuindersma, P.I.; Binsma, J.J.M.; Staring, A.A.M.; Depovere, G.F.G.; Van Dongen, T.; Thijs, P.J.A.;

Effect of carrier lifetime on mode partition noise in multimode semiconductor lasers

1994 / IEEE
By: Wood-Hi Cheng;

Responsivity measurement of Fabry-Perot laser amplifier detectors

1994 / IEEE
By: Corazza, D.J.; Keyworth, B.P.; Cormack, G.D.;

Dynamic range of semiconductor laser in the presence of external cavity

1994 / IEEE
By: Xiangdong Zhang; Tsang-Der Ni; Daryoush, A.S.;

Effect of thermionic electron emission from the active layer on the internal quantum efficiency of InGaAsP lasers operating at 1.3 /spl mu/m

1994 / IEEE
By: Logan, R.A.; Tanbun-Ek, T.; Olsson, N.A.; Kazarinov, R.F.; Andrekson, P.A.;

Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers

1994 / IEEE
By: Tiemeijer, L.F.; Thiis, P.J.A.; Van Dongen, T.; Binsma, J.J.M.;

An approximate k/spl middot/p theory for optical gain of strained InGaAsP quantum-well lasers

1994 / IEEE
By: Davies, M.; Jun Wang; Yao Zou; Dion, M.; Zhan-Ming Li; McAlister, S.P.;

Electrically tunable semiconductor Fabry-Perot filter

1994 / IEEE
By: Burrows, E.C.; Stone, J.; Dentai, A.; Zirngibl, M.; Stulz, L.W.; Burrus, C.A.;

Influence of thermal effects on the tunability of three-electrode DFB lasers

1994 / IEEE
By: Syvridis, D.; Sphicopoulos, T.; Paschos, V.; Caroubalos, C.;

Applications of the integrated waveguide grating router

1994 / IEEE
By: Glance, B.; Wilson, R.W.; Kaminow, I.P.;

Switching characteristics of LD transceivers for optical TCM transmission

1994 / IEEE
By: Okada, K.; Sato, K.; Yamada, H.;

Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters

1994 / IEEE
By: Weber, J.-P.;

Nonlinear gain and the spectral output of short-external-cavity 1.3 /spl mu/m InGaAsP semiconductor diode lasers

1994 / IEEE
By: Cassidy, D.T.; Hayward, J.E.;

Dispersion-compensated 333-km 10-Gb/s transmission using mid-span spectral inversion in an injection-locked InGaAsP V-groove laser

1994 / IEEE
By: Prucnal, P.R.; Gnauck, A.H.; Iannone, P.P.;

Optical switching in InGaAsP amplifiers

1994 / IEEE / 0-7803-1476-X
By: Davies, D.A.O.;

Selective area processing of InGaAsP

1994 / IEEE / 0-7803-1476-X
By: Abernathy, C.R.; Pearton, S.J.; Ren, F.;

Temperature and transverse mode characteristics of InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates

1994 / IEEE / 0-7803-1476-X
By: Bowers, J.E.; Hu, E.L.; Miller, B.I.; Yang, L.; Mirin, R.; Babic, D.I.; Dudley, J.J.;

Optically-pumped all-epitaxial wafer-fused 1.52-/spl mu/m vertical-cavity lasers

1994 / IEEE / 0-7803-1476-X
By: Streubel, K.; Dudley, J.J.; Babic, D.I.; Bowers, J.E.; Hu, E.L.; Mirin, R.P.;

Optical transitions in strained quantum wells of In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/ with InGaAsP barriers

1994 / IEEE / 0-7803-1476-X
By: Jiang, X.P.; Logan, R.A.; Coblentz, D.; Vandenberg, J.M.; Forouhar, S.; Temkin, H.; Robinson, G.Y.; Patrizi, G.A.; Thiagarajan, P.;

Low threshold, high quantum efficiency, high speed strain compensated multiquantum well lasers

1994 / IEEE / 0-7803-1476-X
By: Landgren, G.; Broberg, B.; Klinga, T.; Lourdudoss, S.; Varga, D.; Streubel, K.; Ohlander, U.; Kjebon, O.; Wallin, J.;

Improved compression of InGaAsP gain-switched DFB laser pulses using polarization dispersion effects

1994 / IEEE / 0-7803-1476-X
By: Kamiya, T.; Takeshita, H.; Thedrez, B.;

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