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Topic: Ingaasp/inp Lasers

Results

The high-speed limit of FM response in semiconductor lasers
1993 / IEEE
By: Morinaga, M.; Takakuwa, C.; Suzuki, N.; Tohyama, M.;
Band-structure engineering in strained semiconductor lasers
1994 / IEEE
By: Adams, A.R.; O'Reilly, E.P.;
High-speed and high-power 1.3 /spl mu/m InGaAsP/InP selective proton bombarded buried crescent lasers with optical field attenuation regions
1999 / IEEE / 7-5635-0402-8
By: Zhu, N.H.; Gao, D.S.; Song, J.F.; Yi, M.B.; Zhang, B.J.; Wang, W.;
Effect of p-doping on the performance of high power 1.5-/spl mu/m InGaAsP MQW lasers
2000 / IEEE / 0-7803-6320-5
By: Donetsky, D.; Trussell, W.; Belenky, G.; Shterengas, L.; Maiorov, M.; Menna, R.; Garbuzov, D.; Connolly, J.;
High power single spatial and longitudinal mode 1310 nm InGaAsP/InP lasers with 450 mW CW output power for telecommunication applications
2001 / IEEE / 0-7803-6705-7
By: Menna, R.; Garbuzov, D.; Connolly, J.; Todorov, S.; Komissarov, A.; Tsekoun, A.; Khalfin, V.; Maiorov, M.;
Vertically integrated InGaAsP/InP microstack lasers
2004 / IEEE / 1-55752-777-6
By: Chan, K.; An, H.; Willner, B.I.; Shellenbarger, Z.A.;
High-power high-brightness tapered diode lasers and amplifiers for eye-safe operation
2004 / IEEE / 0-7803-8557-8
By: Weimann, G.; Mikulla, M.; Kaufel, G.; Losch, R.; Aidam, R.; Kelemen, M.T.; Kallenbach, S.;
Short-cavity 1.55 /spl mu/m DBR lasers integrated with high-speed EAM modulators
2004 / IEEE / 0-7803-8627-2
By: Skogen, E.J.; Wang, C.S.; Coldren, L.A.; Morrison, G.B.; Raring, J.W.;

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