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Topic: Impact Ionisation

Results

Fundamental limitations on DRAM storage capacitors

1985 / IEEE
By: Noble, W.P.; Walker, W.W.;

Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit Simulation

2011 / IEEE
By: Shen, Z.J.; Jiann-Shiun Yuan; Boyi Yang;

Compact Modeling of Partially Depleted Silicon-on-Insulator Drain-Extended MOSFET (DEMOSFET) Including High-Voltage and Floating-Body Effects

2011 / IEEE
By: Agarwal, T.K.; Kumar, M.J.; Subramanian, V.; Trivedi, A.R.;

Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback, and Self-Heating

2011 / IEEE
By: Chakravorty, A.; DasGupta, N.; DasGupta, A.; Radhakrishna, U.;

AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage

2011 / IEEE
By: Chee Hing Tan; Shiyu Xie;

A Physical Understanding of RF Noise in Bulk nMOSFETs With Channel Lengths in the Nanometer Regime

2012 / IEEE
By: Machala, C.; Hou, F.; Martin, S.; Shichijo, H.; Trombley, D.E.; Patalay, P.R.; Jindal, R.P.; Mahajan, V.M.;

A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs

2012 / IEEE
By: Bilbro, G.L.; Trew, R.J.; Schimizzi, R.D.;

The Best Control of Parasitic BJT Effect in SOI-LDMOS With SiGe Window Under Channel

2012 / IEEE
By: Orouji, A.A.; Mehrad, M.;

The Effect of Self-Heating in LDMOSFET Expansion Regime

2012 / IEEE
By: Hsueh-Liang Chou; Jeng Gong; Chih-Fang Huang; Hsiao-Chin Tuan; Yu-Chang Jong; Ruey-Hsin Liou; Ng, J.C.W.;

A 500 watt l-band electron bombarded semiconductor amplifier

1974 / IEEE
By: Carter, P.S.; Long, J.A.;

Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTs

2011 / IEEE / 978-3-8007-3356-9
By: Scavennec, A.; Decobert, J.; Maher, H.;

Strain effects on performances in InAs HEMTs

2011 / IEEE / 978-3-8007-3356-9
By: Fujishiro, H.I.; Hara, S.; Watanabe, H.; Sato, J.; Nishino, H.; Machida, F.;

Avalanche multiplication process in InGaAsP/InP quantum well infrared photodetectors

2011 / IEEE / 978-1-4577-0321-8
By: Dao Hua Zhang; Junwen Xue; Lianggang Lu; Binghua Su; Lu Sun;

Impact ionization effective threshold energy estimation in MOSFET with 50-nm channel length

2011 / IEEE / 978-966-335-357-9
By: Borzdov, A.V.; Speranskiy, D.S.; Borzdov, V.M.;

1T-DRAM at the 22nm technology node and beyond: An alternative to DRAM with high-k storage capacitor

2011 / IEEE / 978-1-4577-1025-4
By: Martinez, F.; Sagnes, B.; Chang, S.J.; Hubert, A.; Guegan, G.; Pascal, F.; Cristoloveanu, S.; Bawedin, M.; Hoffmann, A.; Valenza, M.;

Development and verification of an accurate FEM electromagnetic model for a complex multi-stage RADAR limiter

2011 / IEEE / 978-2-87487-025-5
By: Newsome, K.; Fletcher, G.; Dowthwaite, M.; Farrington, N.; Coaker, B.M.;

Monte Carlo modeling of carrier transport and impact ionization in GaSb

2011 / IEEE / 978-1-61284-264-6
By: Chan, S.L.; Choo, K.Y.;

Kink model for SOI MOSFET

2011 / IEEE / 978-1-4577-1107-7
By: Siddiqui, M.J.; Kaifi, M.;

The impact of back bias on the floating body effect in UTBOX SOI devices for 1T-FBRAM memory applications

2012 / IEEE / 978-1-4577-1117-6
By: Aoulaiche, M.; Martino, J.A.; Andrade, M.G.C.; Claeys, C.; Simoen, E.; Collaert, N.;

Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices

2012 / IEEE / 978-1-4673-0192-3
By: Martino, J.A.; Claeys, C.; Simoen, E.; Collaert, N.; de Andrade, M.G.C.; Jurczak, M.; Nicoletti, T.; Sasaki, K.R.A.; Aoulaiche, M.; Almeida, L.M.;

Analysis of sub-threshold swing and performance of various tunnel transistors

2012 / IEEE / 978-1-4673-0273-9
By: Satheshkumar, R.; Murugeshan, G.;

A study of second saturation effect of OPTVLD NMOS

2011 / IEEE / 978-1-61284-193-9
By: Wenfang Du; Xingbi Chen;

Z²-FET: A zero-slope switching device with gate-controlled hysteresis

2012 / IEEE / 978-1-4577-2084-0
By: Cristoloveanu, S.; Zaslavsky, A.; Le Royer, C.; Wan, J.;

Impact ionization effect in deep submicron MOSFET features simulation

2012 / IEEE / 978-83-932075-8-9
By: Speransky, D.; Tran Tuan Trung;

Improved dual-carrier high gain impact ionization engineered avalanche photodiode

2012 / IEEE / 978-1-4673-1164-9
By: Ghosh, S.; Banerjee, K.; Jun Huang; Hayat, M.M.;

An InAs nanowire spin transistor with subthreshold slope of 20mV/dec

2012 / IEEE / 978-1-4673-1164-9
By: Ohno, M.; Yoh, K.; Konishi, K.; Cui, Z.; Blekker, K.; Harmand, J.; Tegude, F.; Prost, W.;

Impact Ionization Coefficients in $\hbox{Al}_{0.52} \hbox{In}_{0.48}\hbox{P}$

2011 / IEEE
By: Krysa, A.B.; Ng, J.S.; Ong, J.S.L.; David, J.P.R.;

High-Frequency Performance of Self-Aligned Gate-Last Surface Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFET

2012 / IEEE
By: Egard, M.; Ohlsson, L.; Arlelid, M.; Persson, K.-M.; Wernersson, L.-E.; Lenrick, F.; Wallenberg, R.; Lind, E.; Borg, B.M.;

Modeling Inductive Behavior of MOSFET Scattering Parameter $S _{22}$ in the Breakdown Regime

2012 / IEEE
By: Chie-In Lee; Wei-Cheng Lin; Yan-Tin Lin;

Anomalous increase in hot-carrier-induced threshold voltage shift in n-type drain extended metal-oxide-semiconductor transistors

2008 / American Institute of Physics
By: Jone F. Chen; Shiang-Yu Chen; J. R. Lee; Kuo-Ming Wu; Tsung-Yi Huang; C. M. Liu;

Low subthreshold slope in junctionless multigate transistors

2010 / American Institute of Physics
By: Chi-Woo Lee; Alexei N. Nazarov; Isabelle Ferain; Nima Dehdashti Akhavan; Ran Yan; Pedram Razavi; Ran Yu; Rodrigo T. Doria; Jean-Pierre Colinge;

Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage

2011 / American Institute of Physics
By: Qianqian Huang; Ru Huang; Zhenhua Wang; Zhan Zhan; Yangyuan Wang;

Theory of superfast fronts of impact ionization in semiconductor structures

2007 / American Institute of Physics
By: Pavel Rodin; Ute Ebert; Andrey Minarsky; Igor Grekhov;

Ionization by impact electrons in solids: Electron mean free path fitted over a wide energy range

2006 / American Institute of Physics
By: Beata Ziaja; Richard A. London; Janos Hajdu;

Performance evaluation of picosecond high-voltage power switches based on propagation of superfast impact ionization fronts in SiC structures

2006 / American Institute of Physics
By: Pavel Rodin; Pavel Ivanov; Igor Grekhov;

Hg/sub 0.4/Cd/sub 0.6/Te 1.55- mu m avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off band

1988 / IEEE
By: Meslage, J.; Lecoy, G.P.; Valenza, M.; Alabedra, R.; Orsal, B.; Boisrobert, C.Y.;

Field and spatial geometry dependencies of the electron and hole ionization rates in GaAs/AlGaAs multiquantum well APD's

1988 / IEEE
By: Brennan, K.F.; Wang, Y.;

Effect on the performance of staircase APDs of electron impact ionization within the graded-gap region

1988 / IEEE
By: O'Reilly, J.J.; Fyath, R.S.;

Theory of the temporal response of a simple multiquantum-well avalanche photodiode

1988 / IEEE
By: Brennan, K.F.; Khorsandi, T.; Saleh, B.E.A.; Teich, M.C.; Wang, Y.;

A circuit simulation model for bipolar-induced breakdown in MOSFET

1988 / IEEE
By: Pinto-Guedes, M.; Chan, P.C.;

Drain avalanche breakdown in gallium arsenide MESFET's

1988 / IEEE
By: Tomizawa, M.; Wada, Y.;

Design methodology and size limitations of submicrometer MOSFETs for DRAM application

1988 / IEEE
By: Asada, K.; Osakama, T.; Lee, W.-H.; Sugano, T.;

n-channel MOSFET breakdown characteristics and modeling for p-well technologies

1988 / IEEE
By: Beitman, B.A.;

Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET's

1988 / IEEE
By: Tang Ting-Wei; Chen Yu-Zhang;

Charge amplification by impact ionization in charge-coupled devices

1988 / IEEE
By: Gajar, S.A.; Burke, B.E.;

Failure in CMOS circuits induced by hot carriers in multi-gate transistors

1988 / IEEE
By: Niuya, T.; Aur, S.-W.; Chatterjee, A.; Seitchik, J.A.; Yang, P.;

Leakage-current-induced hot-carrier degradation of p-channel MOSFETs

1988 / IEEE
By: Rodder, M.;

Drain-avalanche and hole-trapping induced gate leakage in thin-oxide MOS devices

1988 / IEEE
By: Swaminathan, B.; Haddad, S.; Chang, C.; Lien, J.;

High field conduction in poly-p-xylylene thin film

1988 / IEEE
By: Mizutani, T.; Ieda, M.; Takai, Y.; Mori, T.;

The effect of impact ionization induced bipolar action on n-channel hot-electron degradation

1988 / IEEE
By: Cuevas, P.P.; Krieger, G.; Misheloff, M.N.;

Single-transistor latch in SOI MOSFETs

1988 / IEEE
By: Wei, C.C.; Mao, B.-Y.; Sundaresan, R.; Matloubian, M.; Chen, C.-D.; Pollack, G.P.;

Luminescence response of SrS:CeF/sub 3/ ACTFEL devices to various pulse waveforms

1989 / IEEE
By: Singh, V.P.; Morton, D.C.;

Improved physical modeling of submicron MOSFETs based on parameter extraction using 2-D simulation

1989 / IEEE
By: Hwang, C.G.; Dutton, R.W.;

The electron impact ionization rate and breakdown voltage in GaAs/Ga/sub 0.7/Al/sub 0.3/As MQW structures

1989 / IEEE
By: Roberts, J.S.; Marsland, J.S.; David, J.P.R.;

Substrate current model for submicrometer MOSFETs based on mean free path analysis

1989 / IEEE
By: Hwang, C.G.; Dutton, R.W.;

Avalanche multiplication in a compact bipolar transistor model for circuit simulation

1989 / IEEE
By: De Graaff, H.C.; Kloosterman, W.J.;

MOS device modeling at 77 K

1989 / IEEE
By: Selberherr, S.;

An AlGaSb avalanche photodiode exhibiting low excess noise factor

1988 / IEEE
By: Tanahashi, T.; Yasuoka, N.; Kuwatsuka, H.; Miura, S.; Mikawa, T.; Wada, O.;

New cell designs for improved IGBT safe-operating-area

1988 / IEEE
By: Al-Marayati, S.; Chow, T.P.; Chang, H.R.; Baliga, B.J.;

Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain

1989 / IEEE
By: Hsieh, H.C.; Sargeant, W.;

Utilization of electroluminescence from avalanche p-n junctions for optical testing of silicon integrated circuits

1989 / IEEE
By: Fuller, L.F.; Powell, M.A.; Kurinec, S.K.; Arora, K.; Kerns, D.V., Jr.;

Breakdown behavior of GaAs/AlGaAs HBTs

1989 / IEEE
By: Morkoc, H.; Chyi, J.-I.; Gao, G.-B.; Chen, J.J.;

Field distribution and avalanche breakdown of trench MOS capacitors operated in deep depletion

1989 / IEEE
By: Kump, M.R.; Bulucea, C.; Amberiadis, K.;

Unusually abrupt switching in submicrometer thin-film transistors using a polysilicon film with enhanced grain size

1990 / IEEE
By: Hajjar, J.-J.J.; Yamauchi, N.; Reif, R.;

Impact ionization in GaAs MESFETs

1990 / IEEE
By: Ko, P.K.; George, P.; Hu, C.; Hui, K.;

Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistors

1990 / IEEE
By: Lu, P.-F.;

A theory of multiplication noise

1990 / IEEE
By: Hollenhorst, J.N.;

Low temperature MOS device modeling

1989 / IEEE
By: Selberherr, S.; Langer, E.;

Low temperature gate current and 'channel' hot carriers in MOS transistors

1989 / IEEE
By: Henning, A.K.;

Avalanche multiplication in a compact bipolar transistor model for circuit simulation

1988 / IEEE
By: de Graaff, H.C.; Kloosterman, W.J.;

Modeling impact ionization in advanced bipolar transistors for device/circuit simulation

1988 / IEEE
By: Jeong, H.; Fossum, J.G.;

Numerical analysis of breakdown voltage using quasi three dimensional device simulation

1990 / IEEE
By: Dutton, R.W.; Suzumura, M.; Hwang, C.G.; Yabuta, A.;

Hot-carrier current modeling and device degradation in surface-channel p-MOSFETs

1990 / IEEE
By: Hu, C.; Ko, P.-K.; Ong, T.-C.;

Effect of dead space on the excess noise factor and time response of avalanche photodiodes

1990 / IEEE
By: Saleh, B.E.A.; Teich, M.C.; Hayat, M.M.;

Two-dimensional avalanche simulation of collector-emitter breakdown

1990 / IEEE
By: Arnborg, T.;

Inclusion of impact ionization in the backgating of GaAs FETs

1990 / IEEE
By: Li, Z.-M.; Hurd, C.M.; McAlister, S.P.; Day, D.J.;

Influence of base thickness on collector breakdown in abrupt AlInAs/InGaAs heterostructure bipolar transistors

1990 / IEEE
By: Nottenburg, R.N.; Chen, Y.-K.; Jalali, B.; Cho, A.Y.; Humphrey, D.A.; Sivco, D.;

Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature

1990 / IEEE
By: Su, Y.-K.; Wang, R.L.; Yarn, K.F.; Wang, Y.H.;

The reduction of backgating in GaAs MESFETs by impact ionization

1990 / IEEE
By: Hui, K.; George, P.; Hu, C.; Ko, P.K.;

Impact ionization rates in

1990 / IEEE
By: Uji, T.; Fukushima, K.; Makita, K.; Torikai, T.; Watanabe, I.;

Reconciliation of a hot-electron distribution function with the lucky electron-exponential model in silicon

1990 / IEEE
By: Henrickson, L.; Goldsman, N.; Frey, J.;

Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers

1990 / IEEE
By: Magistrali, F.; Bigliardi, S.; Lugli, P.; Capelletti, R.; Manfredi, M.; Zanoni, E.; Canali, C.; Testa, N.; Paccagnella, A.;

The combined effects of band-to-band tunneling and impact ionization in the off regime of an LDD MOSFET

1990 / IEEE
By: Blakey, P.; Sun, S.W.; Orlowski, M.; Subrahmanyan, R.;

High-power microwave generation using optically activated semiconductor switches

1990 / IEEE
By: Nunnally, W.C.;

New findings of pulsed surface breakdown along silicon in vacuum

1990 / IEEE
By: Nam, S.H.; Sudarshan, T.S.;

Modeling GaAs high-voltage, subnanosecond photoconductive switches in one spatial dimension

1990 / IEEE
By: Khanaka, G.H.; Pocha, M.D.; Dease, C.G.; White, W.T., III;

Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices

1990 / IEEE
By: Haddad, S.; Rakkhit, R.; Yue, J.; Chang, C.;

Theoretical analysis of HEMT breakdown dependence on device design parameters

1991 / IEEE
By: Pavlidis, D.; Chau, H.-F.; Tomizawa, K.;

Transient hot-electron effect on n-channel device degradation (MOSFETs)

1989 / IEEE / 0-7803-0817-4
By: De, H.; Davis, M.; Wang, H.; Nissan-Cohen, Y.; Bibyk, S.;

A new hot carrier simulation method based on full 3D hydrodynamic equations

1989 / IEEE / 0-7803-0817-4
By: Katayama, K.; Toyabe, T.;

Band-to-band tunneling induced substrate hot-electron (BBISHE) injection: a new programming mechanism for nonvolatile memory devices

1989 / IEEE / 0-7803-0817-4
By: Chen, I.C.; Paterson, J.; Kaya, C.;

Physical mechanisms for short channel effects in polysilicon thin films transistors

1989 / IEEE / 0-7803-0817-4
By: Wu, I.-W.; Huang, T.Y.; Lewis, A.G.; Chiang, A.; Bruce, R.H.;

Performance and reliability design issues for deep-submicrometer MOSFETs

1991 / IEEE
By: Chung, J.E.; Hu, C.; Ko, P.-K.; Moon, J.E.; Jeng, M.-C.;

Anomalous kink-related excess noise in MOSFETs at 4.2 K

1991 / IEEE
By: Dierickx, B.; Declerck, G.J.; Claeys, C.; Vermeiren, J.; Cos, S.; Simoen, E.;

Modeling capture, emission, and impact ionization of deep-level traps for Ga-As semi-insulating substrates

1991 / IEEE
By: Dutton, R.W.; Li, Q.;

Evaluation of the high-frequency small-signal performance of bipolar transistors under avalanche conditions

1991 / IEEE
By: Hebert, F.;

Comments, with reply, on 'Impact ionization in GaAs MESFETs' by K. Hui, et al

1991 / IEEE
By: Paccagnella, A.; Canali, C.; Cetronio, A.; Lanzieri, C.; Zanoni, E.;

Theoretical study of a potential ultraviolet avalanching detector based on impact ionization out of confined quantum states

1991 / IEEE
By: Brennan, K.F.; Ruden, P.P.; Wang, Y.;

SMART-II: a three-dimensional CAD model for submicrometer MOSFET's

1991 / IEEE
By: Moriyama, K.; Ohe, K.; Hiroki, A.; Odanaka, S.; Umimoto, H.;

The impact ionization and electrical breakdown strength for atomic and molecular liquids

1991 / IEEE
By: Atrazhev, V.M.; Iakubov, I.T.; Dmitriev, E.G.;

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