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Topic: Gsmbe Growth

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GSMBE growth on patterned substrates for optoelectronic devices
1992 / IEEE / 0-7803-0522-1
By: Bonnevie, D.; Labourie, C.; Goarin, E.G.; Simes, R.J.; Goldstein, L.; Lesterlin, D.; Perales, A.;
Chemical beam etching of InP in GSMBE
1995 / IEEE / 0-7803-2147-2
By: Gentner, J.-L.; Goldstein, L.; Jarry, P.;
GSMBE growth of InGaAsP with an "on site" arsine generator
1995 / IEEE / 0-7803-2147-2
By: Parent, J.-C.; Pinquier, A.; Labrune, P.; Gentner, J.-L.;
The effect of extrinsic capacitances on the microwave performance of Ga/sub 0.51/In/sub 0.49/P/GaAs MISFETs (0 nm/spl les/t/spl les/10 nm) grown by GSMBE
1996 / IEEE / 0-7803-3223-7
By: Shey-Shi Lu; Yo-Sheng Lin;
Fabrication and simulation of high-power high-speed Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFET's grown by GSMBE
1996 / IEEE / 0-7803-3504-X
By: Yo-Sheng Lin; Chin-Chun Meng, C.; Shey-Shi Lu; Yo-Jen Wang;
Highly reproducible 980- and 780-nm VCSEL's grown by GSMBE
1994 / IEEE / 0-7803-1470-0
By: Tan, M.R.T.; Houng, Y.M.; Wang, S.Y.;
Bandgap engineered InP-based power double heterojunction bipolar transistors
1997 / IEEE / 0-7803-3898-7
By: Chen, M.; Takyiu Liu; Chanh Nguyen; Chen, M.; Virk, R.;
Low threshold InAsP/InGaP/InGaAsP/InP strain-compensated and compressively-strained 1.3 /spl mu/m lasers grown by GSMBE
1997 / IEEE / 0-7803-3898-7
By: Dries, J.C.; Gokhale, M.R.; Uenohara, H.; Forrest, S.R.;
Fabrication and simulation of Ga/sub 0.51/In/sub 0.49/P/In/sub x/Ga/sub 1-x/As doped-channel FETs and MMIC amplifiers grown by GSMBE
1997 / IEEE / 0-7803-3911-8
By: Shey-Shi Lu; Yo-Sheng Lin;
1.3 /spl mu/m InAsP-GaInAsP-InGaP strain-compensated MQW lasers grown by GSMBE
1999 / IEEE / 0-7803-5562-8
By: Kumada, K.; Shimizu, H.; Saito, K.; Kasukawa, A.; Yokouchi, N.; Mukaihara, T.; Yamanaka, N.;
Design and characterization of GaAs-Ga/sub 0.89/In/sub 0.11/N/sub 0.02/As/sub 0.98/-GaAs NpN double heterojunction bipolar transistors with low turn-on voltage
2000 / IEEE / 0-7803-6472-4
By: Asbeck, P.M.; Tu, C.W.; Mochizuki, K.; Xin, H.P.; Welty, R.J.;
Non-destructive characterization of heterointerfaces by depth-resolved cathodoluminescence and its application to InGaP/GaAs interface
2001 / IEEE / 0-7803-6700-6
By: Ishikawa, F.; Hasegawa, H.;
Band gap reduction in InAsN alloy
2002 / IEEE / 0-7803-7320-0
By: Ding-Kang Shih; Hao-Hsiung Lin; Tso-Yu Chu;

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