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Topic: Gate Controllability

Results

Switching controllability of high voltage GaN-HEMTs and the cascode connection
2012 / IEEE / 978-1-4577-1597-6
By: Sugiyama, T.; Naka, T.; Ohno, T.; Yoshioka, A.; Fujimoto, H.; Saito, Y.; Saito, W.;
Effects of a new trench-isolated transistor using sidewall gates
1989 / IEEE
By: Hieda, K.; Hamamoto, T.; Inoue, I.; Sunouchi, K.; Watanabe, H.; Horiguchi, F.;
An experimental and numerical study on the forward biased SOA of IGBTs
1996 / IEEE
By: Haruguchi, H.; Uenishi, A.; Yamashita, J.; Hagino, H.;
Recessed multi-gate SOI MOSFET in deep decananometer regime
2001 / IEEE / 0-7803-6739-1
By: Jvi-Tsong Lin; Ping-Shin Jue; Yan-Youg Xu; Kuo-ying Huang; Shih-chang Chang;
Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator
2004 / IEEE / 0-7803-8191-2
By: Lei Sun; Meng Liu; Xiaoyan Liu; Gang Du; Ruqi Han;
Simulation study of a field emission triode structure using carbon-nanotube emitters
2004 / IEEE
By: Chenggang Xie;
Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method
2007 / IEEE / 978-1-4244-1507-6
By: Qiang Liu; Ming Zhang; Ximeng Guan; Zhiping Yu;
Characteristics of Poly-Si Nanowire Transistors with Multiple-Gate Configurations
2008 / IEEE / 978-1-4244-1614-1
By: Jian-Fu Huang; Ko-Hui Lee; Horng-Chih Lin; Hsing-Hui Hsu; Tiao-Yuan Huang;
Performance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices
2006 / IEEE / 978-1-4244-3308-7
By: Jeoung Woo Kim; Yun Chang Park; Myong Ho Song; Jae Sub Oh; Gi Sung Lee; Kwang Hee Kim; Yang-Kyu Choi; Jin Su Kim; Moon-Gyu Jang; Dong-Il Moon; Sungho Kim; Jin-Woo Han; Sung-Jin Choi;
Gateless-FET undoped AlGaN/GaN HEMT structure for liquid-phase sensor
2010 / IEEE / 978-1-4244-6609-2
By: Abidin, M.S.Z.; Mohamed, M.H.M.; Hashim, M.R.; Aziz, A.A.; Hashim, A.M.; Sharifabad, M.E.; Qindeel, R.; Rahman, A.R.A.; Rahman, S.F.A.; Omar, N.A.;
Characteristics of double-gate polycrystalline silicon thin-film transistors for AMOLED pixel design
2010 / IEEE / 978-1-4244-8157-6
By: Siskos, S.; Tassis, D.; Pappas, I.; Dimitriadis, C.A.;
Passivation-Induced Subthreshold Kink Effect of Ultrathin-Oxide Low-Temperature Polycrystalline Silicon Thin Film Transistors
2011 / IEEE
By: Ta-Chuan Liao; Mon-Chin Tsai; Huang-Chung Cheng; I-Che Lee;

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