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Topic: Gallium Nitride

Results

Continuous and discrete Fourier transforms of steplike waveforms

1982 / IEEE
By: Gans, W.L.; Nahman, N.S.;

Power Enhancement of 410-nm InGaN-Based Light-Emitting Diodes on Selectively Etched GaN/Sapphire Templates

2011 / IEEE
By: Shih-Cheng Huang; Jen-Hung Tu; Ming-Tsung Hung; Dong-Sing Wuu; Horng, R.-H.; Tsung-Yen Tsai; Li-Wei Tu; Wei-Yang Chiang;

White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias

2011 / IEEE
By: Kuan, H.; Yang, J.R.; Li, W.C.; Sun, W.C.; Shiojiri, M.; Chen, M.J.; Huang, Y.H.; Chen, H.C.;

Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness Approach

2011 / IEEE
By: Po-Shun Chiu; Huey-Ing Chen; Chi-Shiang Hsu; Chien-Chang Huang; Po-Cheng Chou; Tai-You Chen; Wen-Chau Liu; Rong-Chau Liu;

Carrier Dynamics Investigation on Passivation Dielectric Constant and RF Performance of Millimeter-Wave Power GaN HEMTs

2011 / IEEE
By: Saraniti, M.; Guerra, D.; Marino, F.A.; Goodnick, S.M.; Ferry, D.K.;

Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires

2011 / IEEE
By: Eddy, C.R.; Jaehui Ahn; Hong-Youl Kim; Mastro, M.A.; Simpkins, B.; Hite, J.K.; Jihyun Kim; Pehrsson, P.;

A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

2011 / IEEE
By: Goyal, N.; Khandelwal, S.; Fjeldly, T.A.;

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

2011 / IEEE
By: Fay, P.; Kopp, D.; Shiping Guo; Xiang Gao; Dong Seup Lee; Palacios, T.;

Novel Oxide-Passivated AlGaN/GaN HEMT by Using Hydrogen Peroxide Treatment

2011 / IEEE
By: Chiu-Sheng Ho; Ching-Sung Lee; Wei-Chou Hsu; Bo-Yi Chou; Han-Yin Liu;

A Miniaturized WiMAX Band 4-W Class-F GaN HEMT Power Amplifier Module

2011 / IEEE
By: Kyung-Whan Yeom; Hyun-Seok Oh; Hae-Chang Jeong;

Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs

2011 / IEEE
By: Pailloncy, G.; Andersson, K.; Thorsell, M.; Rolain, Y.;

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

2011 / IEEE
By: Rowena, I.B.; Egawa, T.; Selvaraj, S.L.;

High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons

2011 / IEEE
By: Hsu, A.L.; Azize, M.; Palacios, T.; Gradecak, S.; Shiping Guo; Xiang Gao; Smith, M.; Saadat, O.I.;

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

2011 / IEEE
By: Giesen, C.; Ketteniss, N.; Lecourt, F.; De Jaeger, J.-C.; Heuken, M.; Behmenburg, H.; Vescan, A.; Eickelkamp, M.; Hoel, V.; Defrance, N.;

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

2011 / IEEE
By: Wowchak, A.M.; Smith, D.J.; Dabiran, A.M.; Crespo, A.; Johnson, M.R.; Walker, D.E.; Tetlak, S.K.; Trejo, M.; Fitch, R.C.; Chabak, K.D.; Gillespie, J.K.; Kossler, M.;

Design of Highly Efficient Broadband Class-E Power Amplifier Using Synthesized Low-Pass Matching Networks

2011 / IEEE
By: Peroulis, D.; Chen, K.;

Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

2011 / IEEE
By: Maru, A.; Kuboyama, S.; Tamura, T.; Abe, H.; Hirao, T.; Ikeda, N.; Shindou, H.;

Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

2011 / IEEE
By: Puzyrev, Y.S.; Pantelides, S.T.; Schrimpf, R.D.; Fleetwood, D.M.; Zhang, E.X.; Roy, T.;

Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy

2011 / IEEE
By: Kishino, K.; Kouno, T.; Sakai, M.;

Wavelength Dependence of Transverse Mode Coupling With/Without E-Block of GaN Laser Cavity

2011 / IEEE
By: Chavoor, G.; Lal, K.; Xiaomin Jin;

Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers

2011 / IEEE
By: Baliga, B.J.; Ozbek, A.M.;

Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN

2011 / IEEE
By: Venkatachalam, A.; Christensen, A.; Sridharan, S.; Yoder, P.D.; Graham, S.;

Determination of mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal

2011 / IEEE
By: Lysakowska, M.; Brzozowski, E.; Soluch, W.; Sadura, J.;

Enhanced Performance of LEDs Using Periodic Tent-Like Post Patterns on A-plane Sapphire Substrates

2011 / IEEE
By: Bo-Wen Lin; Wen-Ching Hsu; Wu, Y.-C.S.; Bau-Ming Wang; Cheng-Yu Hsieh; Chung-Cheng Chang;

Multivalued Logic Using a Novel Multichannel GaN MOS Structure

2011 / IEEE
By: Misra, V.; Ramanan, N.;

Emission Efficiency Dependence on the p-GaN Thickness in a High-Indium InGaN/GaN Quantum-Well Light-Emitting Diode

2011 / IEEE
By: Wei-Lun Chung; Che-Hao Liao; Kuang-Yu Chen; Horng-Shyang Chen; Chih-Yen Chen; Wen-Ming Chang; Chih-Chung Yang; Yean-Woei Kiang; Yu-Feng Yao; Jeng-Jie Huang;

Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer

2011 / IEEE
By: Hsueh-Hsing Liu; Jen-Inn Chyi; Geng-Yen Lee; Peng-Ren Chen;

Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes

2011 / IEEE
By: June-O Song; Sang Youl Lee; Joon-Woo Jeon; Tae-Yeon Seong;

Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures

2011 / IEEE
By: Eun-Soo Nam; Cheol-Hoi Kim; Jong-In Shim; Han-Youl Ryu; Jin Hyoung Choi; Jong-Moo Lee; Min-Soo Noh; Hyun Min Jung;

Reduction of Flicker Noise in AlGaN/GaN-Based HFETs After High Electric-Field Stress

2011 / IEEE
By: Fan Zhang; Xing Li; Mo Wu; Kayis, C.; Avrutin, V.; Congyong Zhu; Morkoc, H.; Ozgur, U.;

High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

2011 / IEEE
By: Jen-Inn Chyi; Hsueh-Hsing Liu; Geng-Yen Lee;

Improvement in Electron Overflow of Near-Ultraviolet InGaN LEDs by Specific Design on Last Barrier

2011 / IEEE
By: Ya-Hsuan Shih; Yen-Kuang Kuo; Jih-Yuan Chang; Miao-Chan Tsai;

Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

2011 / IEEE
By: Yi-Keng Fu; Chun-Yen Chang; Bo-Chun Chen; Yan-Kuin Su; Yu-Hsuan Lu; Kai-Feng Huang;

Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design

2011 / IEEE
By: Tien-Chang Lu; Chien-Kang Chen; Yun-Lin Wu; Chien-Chung Lin; Tzeng-Tsong Wu; Shing-Chung Wang; Hao-Chung Kuo;

Interactions of Diffraction Modes Contributed From Surface Photonic Crystals and Nanoholes in a GaN-Based Light-Emitting Diode

2011 / IEEE
By: Yun-Wei Cheng; Szu-Chieh Wang; Jian Jang Huang; Yen-Jen Hung; Liang-Yu Su; Liang-Yi Chen; Yu-Feng Yin;

Isolated Photosystem I Reaction Centers on a Functionalized Gated High Electron Mobility Transistor

2011 / IEEE
By: Mostafa, S.; Tulip, F.S.; Lee, I.; Eliza, S.A.; Islam, S.K.; Ericson, M.N.; Greenbaum, E.;

Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

2012 / IEEE
By: Yuh-Renn Wu; Chi-Kang Li;

Carrier Transport Mechanism of Ni/Ag/Pt Contacts to p-Type GaN

2012 / IEEE
By: Hyunsoo Kim; Kwang-Soon Ahn; Youngjun Park;

The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

2012 / IEEE
By: Wei-Da Hu; Xiao-Dong Wang; Wei Lu; Xiao-Shuang Chen;

Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation

2012 / IEEE
By: Chini, A.; Zanoni, E.; Meneghesso, G.; Fantini, F.; Di Lecce, V.;

Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs

2012 / IEEE
By: Butendheich, R.; Humphreys, C.; Dandan Zhu; Trivellin, N.; Vaccari, S.; Leirer, C.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Hahn, B.;

Enhanced Extraction Efficiency of InGaN/GaN Light-Emitting Diodes by Liquid Phase-Deposited Zinc-Oxide-Textured Window Layer

2012 / IEEE
By: Yuan-Chih Lee; Po-Hsun Lei; Chia-Te Lin;

Effects of Strains and Defects on the Internal Quantum Efficiency of InGaN/GaN Nanorod Light Emitting Diodes

2012 / IEEE
By: Jian Jang Huang; Tzu-Chun Lu; Yu-Ting Wang; Li-Chuan Huang; Liang-Yi Chen; Chun-Hsiang Chang;

Numerical Study of the Effects of Hetero-Interfaces, Polarization Charges, and Step-Graded Interlayers on the Photovoltaic Properties of (0001) Face GaN/InGaN p-i-n Solar Cell

2012 / IEEE
By: Yen-Kuang Kuo; Ya-Hsuan Shih; Jih-Yuan Chang;

Blue InGaN Light-Emitting Diodes With Multiple GaN-InGaN Barriers

2012 / IEEE
By: Jih-Yuan Chang; Tsun-Hsin Wang; Yen-Kuang Kuo;

Low-Temperature Bonding of GaN on Si Using a Nonalloyed Metal Ohmic Contact Layer for GaN-Based Heterogeneous Devices

2012 / IEEE
By: Higurashi, E.; Suga, T.; Fukunaga, T.;

Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique

2012 / IEEE
By: Jin-Chai Li; Chia-Cheng Tu; Ching-Hsueh Chiu; Shih-Cheng Huang; Po-Min Tu; Chien-Chung Lin; Zhen-Yu Li; Chun-Yen Chang; Shing-Chung Wang; Hao-Chung Kuo; Tien-Chang Lu; Hsiao-Wen Zan; Wu-Yih Uen;

Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes

2012 / IEEE
By: Su-Ik Park; Jong-In Shim; Han-Youl Ryu; Dong-Soo Shin; Hyun-Sung Kim; Dong-Hyun Jang; Jong-Ik Lee;

Increased Light Extraction From Vertical GaN Light-Emitting Diodes With Ordered, Cone-Shaped Deep-Pillar Nanostructures

2012 / IEEE
By: Ki Seob Shin; Jae In Sim; Ho-Myoung An; Tae Geun Kim; Yun Mo Sung;

Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments

2012 / IEEE
By: Sato, S.; Koide, S.; Abderrahmane, A.; Okada, H.; Sandhu, A.; Ohshima, T.;

Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

2012 / IEEE
By: Armstrong, A.; Min Sun; DasGupta, S.; Palacios, T.; Kaplar, R.J.; Atcitty, S.; Stanley, J.B.; Marinella, M.J.;

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

2012 / IEEE
By: Uren, M.J.; Kuball, M.; Moreke, J.;

A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs

2012 / IEEE
By: Bilbro, G.L.; Trew, R.J.; Schimizzi, R.D.;

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

2012 / IEEE
By: del Alamo, J.A.; Jungwoo Joh; Doutt, D.R.; Merz, T.A.; Chung-Han Lin; Brillson, L.J.; Mishra, U.K.;

A High-Efficiency Low-Distortion GaN HEMT Doherty Power Amplifier With a Series-Connected Load

2012 / IEEE
By: Ishikawa, R.; Takayama, Y.; Kawai, S.; Honjo, K.;

Multiharmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers

2012 / IEEE
By: Dellier, S.; Gatard, E.; Maziere, C.; Demenitroux, W.; Quere, R.; Campovecchio, M.;

Optoelectronic Properties of Nanocolumn InGaN/GaN LEDs

2012 / IEEE
By: Sacconi, F.; Di Carlo, A.; Auf der Maur, M.;

Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

2012 / IEEE
By: Weaver, B.D.; Cress, C.D.; Boos, J.B.; Martin, P.A.;

Influence of Thermal and Fast Neutron Irradiation on dc Electrical Performances of AlGaN/GaN Transistors

2012 / IEEE
By: Berthet, F.; Guhel, Y.; Boudart, B.; Gualous, H.; Trolet, J.L.; Piccione, M.; Gaquiere, C.;

Performance Enhancement of Blue Light-Emitting Diodes Without an Electron-Blocking Layer by Using p-Type Doped Barriers and a Hole-Blocking Layer of Low Al Mole Fraction

2012 / IEEE
By: Tao Zhang; Gang-Han Fan; Yun-Yan Zhang;

Design of a 4-W Envelope Tracking Power Amplifier With More Than One Octave Carrier Bandwidth

2012 / IEEE
By: Chin Hsia; Yan, J.J.; Asbeck, P.M.; Kimball, D.F.;

An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3

2012 / IEEE
By: Kobayashi, K.W.;

Spatially and Intensity Adaptive Morphology

2012 / IEEE
By: Pinoli, J.-C.; Debayle, J.;

Physics-Based Modeling of GaN HEMTs

2012 / IEEE
By: Selberherr, S.; Rodle, T.; Murad, S.; Quay, R.; Maroldt, S.; Palankovski, V.; Vitanov, S.;

Calculation of the Nonlinear Junction Temperature for Semiconductor Devices Using Linear Temperature Values

2012 / IEEE
By: Rajaie, A.; Khorshid, A.; Bayba, A.J.; Darwish, A.M.; Hung, H.A.;

A Monolithic AlGaN/GaN HEMT VCO Using BST Thin-Film Varactor

2012 / IEEE
By: Cen Kong; Chen Chen; Jianjun Zhou; Shuwen Jiang; Xiaojian Chen; Hui Li;

Switching Behavior of Class-E Power Amplifier and Its Operation Above Maximum Frequency

2012 / IEEE
By: Seunghoon Jee; Junghwan Moon; Jungjoon Kim; Junghwan Son; Bumman Kim;

AlGaN/GaN HEMT With Distributed Gate for Channel Temperature Reduction

2012 / IEEE
By: Hung, H.A.; Darwish, A.M.; Ibrahim, A.A.;

Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps

2012 / IEEE
By: Jinn-Kong Sheu; Gou Chung Chi; Chung-Wei Chen; Wei-Chih Lai; Shang-Ju Tu; Po-Cheng Chen; Feng-Wen Huang; Yu-Hsiang Yeh; Ming-Lun Lee;

Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature

2012 / IEEE
By: Kawaguchi, M.; Nagamatsu, K.; Imafuji, O.; Onishi, T.; Takigawa, S.; Yamanaka, K.;

Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

2012 / IEEE
By: Fjeldly, T.A.; Chauhan, Y.S.; Khandelwal, S.;

Equivalent Circuit Model for a GaN Gate Injection Transistor Bidirectional Switch

2012 / IEEE
By: Xu-Qiang Shen; Shimizu, M.; Ide, T.; Tanaka, T.; Ueda, T.; Morita, T.;

Theoretical Investigation of Terahertz GaN Mesa Transferred-Electron Device by Means of Time-Domain Energy/Momentum Modeling

2012 / IEEE
By: Thobel, J.-L.; Dessenne, F.; Dalle, C.;

Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors

2012 / IEEE
By: Speck, J.S.; Jing Lu; Singisetti, U.; Man Hoi Wong; Mishra, U.K.;

Simple and Accurate Circuit Simulation Model for Gallium Nitride Power Transistors

2012 / IEEE
By: Shah, K.; Shenai, K.;

On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor

2012 / IEEE
By: Tai-You Chen; Huey-Ing Chen; Chien-Chang Huang; Wen-Chau Liu; Chi-Shiang Hsu; Jian-Kai Liou; Po-Cheng Chou; Chun-Chia Chen;

High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs

2012 / IEEE
By: Kikuchi, T.; Deguchi, T.; Egawa, T.; Yamasaki, K.; Arai, M.;

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

2012 / IEEE
By: Egawa, T.; Wakejima, A.; Watanabe, A.; Selvaraj, S.L.;

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

2012 / IEEE
By: Ringel, S.A.; Mishra, U.K.; Speck, J.S.; DenBaars, S.P.; Sasikumar, A.; Keller, S.; Wong, M.H.; Kolluri, S.; Arehart, A.;

Breakdown-Voltage-Enhancement Technique for RF-Based AlGaN/GaN HEMTs With a Source-Connected Air-Bridge Field Plate

2012 / IEEE
By: Bo Zhang; Hashemi, N.; Junmin Lee; Xu, E.; Gang Xie; Wai Tung Ng; Fu, F.Y.;

Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

2012 / IEEE
By: Dasgupta, S.; Nidhi; Mishra, U.K.; Speck, J.S.; Jing Lu;

Extraction of Location and Energy Level of the Trap Causing Random Telegraph Noise at Reverse-Biased Region in GaN-Based Light-Emitting Diodes

2012 / IEEE
By: Donghoon Kang; Jungjin Park; Hyungcheol Shin; Joong-Kon Son;

Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors

2012 / IEEE
By: Chih-Wei Yang; Hsien-Chin Chiu; Chia-Hsuan Wu; Chao-Hung Chen;

Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays

2012 / IEEE
By: Zhang, Y.Y.; Yan, Q.; Yu, J.; Chen, Y.; Wu, K.; Duan, R.; Li, J.M.; Wei, T.B.; Zeng, Y.; Wang, J.;

Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon

2012 / IEEE
By: Hyun-Gi Hong; Jaekyun Kim; Joosung Kim; Youngjo Tak; Jun-Youn Kim; Moonseung Yang; U-In Chung; Youngsoo Park; Junghoon Park; Suhee Chae;

Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

2012 / IEEE
By: Andersson, K.; Thorsell, M.; Hjelmgren, H.; Rorsman, N.;

Theoretical and Experimental Study of Inverse Piezoelectric Effect in AlGaN/GaN Field-Plated Heterostructure Field-Effect Transistors

2012 / IEEE
By: Asano, K.; Yamanoguchi, K.; Ishikura, K.; Ando, Y.; Takahashi, H.;

Carrier Dynamics in High-Efficiency Blue GaN Light-Emitting Diodes Under Different Bias Currents and Temperatures

2012 / IEEE
By: Tulkki, J.; Oksanen, J.; Kivisaari, P.; Jang, C.H.; Lee, M.L.; Kai-Lun Chi; Jin-Wei Shi; Sheu, J.K.;

GaN-Based Light-Emitting Diodes Integrated With Zinc Oxide Photonic Crystals

2012 / IEEE
By: Tsujimura, A.; Nagao, N.; Suzuki, N.; Itou, A.; Hamada, T.; Orita, K.;

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

2012 / IEEE
By: Meneghesso, G.; Zanoni, E.; Ueda, D.; Tanaka, T.; Ueda, T.; de Santi, C.; Meneghini, M.;

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

2012 / IEEE
By: Chunhua Zhou; Shu Yang; Qimeng Jiang; Sen Huang; Chen, K.J.;

Gallium Indium Nitride-Based Green Lasers

2012 / IEEE
By: Zah, C.-E.; Bhat, R.; Sizov, D.;

Light Extraction Efficiency Improvement by Curved GaN Sidewalls in InGaN-Based Light-Emitting Diodes

2012 / IEEE
By: Yi Xiaoyan; Li Jing; Wei Tongbo; Li Zhi; Guo Enqing; Zhang Yiyun; Wang Guohong;

Current Spreading Improvement in GaN-Based Light-Emitting Diode Grown on Nano-Rod GaN Template

2012 / IEEE
By: Hsiu-Mei Chou; Li-Chuan Chang; Cheng-Huang Kuo;

GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer

2012 / IEEE
By: Wei-Chih Lai; Cheng-Hsiung Yen; Shoou-Jinn Chang; Schang-Jing Hon; Tsun-Kai Ko; Chun-Kai Wang; Ya-Yu Yang;

Enhancement of Light Extraction for InGaN LEDs by Means of Beveled Sapphire and Cup-Shaped Copper Sheeting

2012 / IEEE
By: Ray-Hua Horng; Chen-Peng Hsu; Re-Ching Lin; Sin-Liang Ou; Hung-Lieh Hu;

High-Efficiency InGaN/GaN Dot-in-a-Wire Red Light-Emitting Diodes

2012 / IEEE
By: Botton, G.A.; Korinek, A.; Kai Cui; Shaofei Zhang; Hieu Pham Trung Nguyen; Zetian Mi;

Low-Frequency Noise Characteristics of GaN Schottky Barrier Photodetectors Prepared With Nickel Annealing

2012 / IEEE
By: Shih-Ming Wang; Sheng-Joue Young; Bohr-Ran Huang; Shoou-Jinn Chang; Chih-Hung Hsiao; Tse-Pu Chen; Chun-Bo Yang; San-Lein Wu;

Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates

2012 / IEEE
By: Bo-Wen Lin; Shang-Ju Tu; Chia-Yu Lee; Lung-Hsing Hsu; Ching-Hsueh Chiu; Chun-Yen Chang; Shing-Chung Wang; Hao-Chung Kuo; Gou-Chung Chi; Tien-Chang Lu; Chien-Chung Lin; Jinn-Kong Sheu; Yu-Pin Lan; Wen-Ching Hsu; Che-Yu Liu; Yan-Hao Chen;

5.65 GHz High-Efficiency GaN HEMT Power Amplifier With Harmonics Treatment up to Fourth Order

2012 / IEEE
By: Kamiyama, M.; Honjo, K.; Ishikawa, R.;

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