Your Search Results

Use materials about this topic in your textbook!

AcademicPub holds over eight million pieces of educational content - such as case studies and journal articles - for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!

Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Topic: Gallium Compounds

Results

Power Enhancement of 410-nm InGaN-Based Light-Emitting Diodes on Selectively Etched GaN/Sapphire Templates

2011 / IEEE
By: Shih-Cheng Huang; Jen-Hung Tu; Ming-Tsung Hung; Dong-Sing Wuu; Horng, R.-H.; Tsung-Yen Tsai; Li-Wei Tu; Wei-Yang Chiang;

White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias

2011 / IEEE
By: Kuan, H.; Yang, J.R.; Li, W.C.; Sun, W.C.; Shiojiri, M.; Chen, M.J.; Huang, Y.H.; Chen, H.C.;

Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness Approach

2011 / IEEE
By: Po-Shun Chiu; Huey-Ing Chen; Chi-Shiang Hsu; Chien-Chang Huang; Po-Cheng Chou; Tai-You Chen; Wen-Chau Liu; Rong-Chau Liu;

A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

2011 / IEEE
By: Goyal, N.; Khandelwal, S.; Fjeldly, T.A.;

Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer

2011 / IEEE
By: Jang-Sik Lee; Jae Chul Park; Kim, D.M.; Dongsik Kong; Byeong-Hyeok Sohn; Jaeman Jang; Dae Hwan Kim; Il Hwan Cho;

Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature

2011 / IEEE
By: Xiao-Mei Cai; Bao-Ping Zhang; Shao-Xiong Wu; Wen-Jie Liu; Ming Chen; An-Kai Lin; Shuo Lin; Jiang-Yong Zhang; Xin Li; Sheng-Wei Zeng;

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

2011 / IEEE
By: Fay, P.; Kopp, D.; Shiping Guo; Xiang Gao; Dong Seup Lee; Palacios, T.;

Novel Oxide-Passivated AlGaN/GaN HEMT by Using Hydrogen Peroxide Treatment

2011 / IEEE
By: Chiu-Sheng Ho; Ching-Sung Lee; Wei-Chou Hsu; Bo-Yi Chou; Han-Yin Liu;

Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs

2011 / IEEE
By: Pailloncy, G.; Andersson, K.; Thorsell, M.; Rolain, Y.;

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

2011 / IEEE
By: Rowena, I.B.; Egawa, T.; Selvaraj, S.L.;

High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons

2011 / IEEE
By: Hsu, A.L.; Azize, M.; Palacios, T.; Gradecak, S.; Shiping Guo; Xiang Gao; Smith, M.; Saadat, O.I.;

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

2011 / IEEE
By: Giesen, C.; Ketteniss, N.; Lecourt, F.; De Jaeger, J.-C.; Heuken, M.; Behmenburg, H.; Vescan, A.; Eickelkamp, M.; Hoel, V.; Defrance, N.;

DC Versus Pulse-Type Negative Bias Stress Effects on the Instability of Amorphous InGaZnO Transistors Under Light Illumination

2011 / IEEE
By: Hee Sung Lee; Youn-Gyoung Chang; Dae-Hwan Kim; Tae-Woong Moon; Jae Hoon Kim; Seongil Im; Chang-Dong Kim; Kwon-shik Park;

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

2011 / IEEE
By: Wowchak, A.M.; Smith, D.J.; Dabiran, A.M.; Crespo, A.; Johnson, M.R.; Walker, D.E.; Tetlak, S.K.; Trejo, M.; Fitch, R.C.; Chabak, K.D.; Gillespie, J.K.; Kossler, M.;

High-temperature langasite SAW oxygen sensor

2011 / IEEE
By: Tao-Lun Chin; Peng Zheng; Limin Cao; Malone, V.; Oppenheim, I.; Greve, D.;

Design of Highly Efficient Broadband Class-E Power Amplifier Using Synthesized Low-Pass Matching Networks

2011 / IEEE
By: Peroulis, D.; Chen, K.;

Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin-Film Transistors With Effective Carrier Density

2011 / IEEE
By: Dae Hwan Kim; Dongsik Kong; Yongsik Kim; Minkyung Bae; Hyun Kwang Jeong; Dong Myong Kim; Inseok Hur; Jaehyeong Kim; Woojoon Kim;

Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

2011 / IEEE
By: Maru, A.; Kuboyama, S.; Tamura, T.; Abe, H.; Hirao, T.; Ikeda, N.; Shindou, H.;

Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

2011 / IEEE
By: Puzyrev, Y.S.; Pantelides, S.T.; Schrimpf, R.D.; Fleetwood, D.M.; Zhang, E.X.; Roy, T.;

Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy

2011 / IEEE
By: Kishino, K.; Kouno, T.; Sakai, M.;

Wavelength Dependence of Transverse Mode Coupling With/Without E-Block of GaN Laser Cavity

2011 / IEEE
By: Chavoor, G.; Lal, K.; Xiaomin Jin;

Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors With InSb-Like and Mixed Interfaces

2011 / IEEE
By: Jianliang Huang; Yulian Cao; Wenquan Ma; Yanhua Zhang; Jun Shao; Kai Cui; Yang Wei;

FDTD Simulation of Inverse 3-D Face-Centered Cubic Photonic Crystal Cavities

2011 / IEEE
By: Chengyong Hu; Taverne, M.P.C.; Ivanov, P.S.; Nicol, M.F.J.; Engin, E.; Cryan, M.J.; Ho, Y.D.; Rarity, J.G.; Railton, C.J.; Craddock, I.J.;

Development of Chip Separation Technique for InGaN-Based Light Emitting Diodes

2011 / IEEE
By: Nam-Seung Kim; Jae-Hoon Lee; Jung-Hee Lee;

Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN

2011 / IEEE
By: Venkatachalam, A.; Christensen, A.; Sridharan, S.; Yoder, P.D.; Graham, S.;

Research on Performance of Red Vertical AlGaInP/GaAs Light-Emitting Diodes Influenced by Current Crowding

2011 / IEEE
By: Tykhonov, A.N.; Bolgov, S.S.; Malyutenko, V.K.; Vilisov, A.A.;

Determination of mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal

2011 / IEEE
By: Lysakowska, M.; Brzozowski, E.; Soluch, W.; Sadura, J.;

Enhancement in Light Extraction of GaN-Based Light-Emitting Diodes With High Reflectivity Electrodes

2011 / IEEE
By: Yan-Kuin Su; Hsiao-Chiu Hsu; Chun-Liang Lin; Kuan Chun Chen;

Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit

2011 / IEEE
By: Roelkens, G.; Tournie, E.; Rodriguez, J.-B.; Cerutti, L.; Gassenq, A.; Hattasan, N.;

Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers

2011 / IEEE
By: Li-Feng Teng; Yi-Teh Chou; Po-Tsun Liu; Shieh, H.D.; Chur-Shyang Fuh; Fu-Hai Li;

Multivalued Logic Using a Novel Multichannel GaN MOS Structure

2011 / IEEE
By: Misra, V.; Ramanan, N.;

Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

2011 / IEEE
By: Zhang, X.T.; Li, X.H.; Xu, H.Y.; Wang, Z.Q.; Liu, Y.C.; Liu, Y.X.;

Thickness-twist and face-shear waves in piezoelectric plates of monoclinic crystals

2011 / IEEE
By: Weiqiu Chen; Jun Zhu;

Transverse waveguide mode suppression for Pt-electrode SAW resonators on Quartz and LGS

2011 / IEEE
By: Meulendyk, B.J.; da Cunha, M.P.;

Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer

2011 / IEEE
By: Hsueh-Hsing Liu; Jen-Inn Chyi; Geng-Yen Lee; Peng-Ren Chen;

Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes

2011 / IEEE
By: June-O Song; Sang Youl Lee; Joon-Woo Jeon; Tae-Yeon Seong;

Fiber-Coupled Light-Emitting Diode With a Capillary-Bonded Hemispherical Lens

2011 / IEEE
By: Huang, S.Y.; Zhu, L.; Choi, H.W.; Lai, P.T.;

Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures

2011 / IEEE
By: Eun-Soo Nam; Cheol-Hoi Kim; Jong-In Shim; Han-Youl Ryu; Jin Hyoung Choi; Jong-Moo Lee; Min-Soo Noh; Hyun Min Jung;

Reduction of Flicker Noise in AlGaN/GaN-Based HFETs After High Electric-Field Stress

2011 / IEEE
By: Fan Zhang; Xing Li; Mo Wu; Kayis, C.; Avrutin, V.; Congyong Zhu; Morkoc, H.; Ozgur, U.;

The Effect of the Active Layer Thickness on the Negative Bias Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors

2011 / IEEE
By: Dongsik Kong; Dae Hwan Kim; Dong Myong Kim; Sungchul Kim; Yong Woo Jeon; Minkyung Bae; Yongsik Kim; Hyun-Kwang Jung;

High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

2011 / IEEE
By: Jen-Inn Chyi; Hsueh-Hsing Liu; Geng-Yen Lee;

Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique

2011 / IEEE
By: Che-Wei Lin; Kuo, F.-M.; Shi, J.-W.; Sheu, J.-K.; Yan, L.-J.; Wei Chen;

Improvement in Electron Overflow of Near-Ultraviolet InGaN LEDs by Specific Design on Last Barrier

2011 / IEEE
By: Ya-Hsuan Shih; Yen-Kuang Kuo; Jih-Yuan Chang; Miao-Chan Tsai;

Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

2011 / IEEE
By: Yi-Keng Fu; Chun-Yen Chang; Bo-Chun Chen; Yan-Kuin Su; Yu-Hsuan Lu; Kai-Feng Huang;

Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design

2011 / IEEE
By: Tien-Chang Lu; Chien-Kang Chen; Yun-Lin Wu; Chien-Chung Lin; Tzeng-Tsong Wu; Shing-Chung Wang; Hao-Chung Kuo;

Interactions of Diffraction Modes Contributed From Surface Photonic Crystals and Nanoholes in a GaN-Based Light-Emitting Diode

2011 / IEEE
By: Yun-Wei Cheng; Szu-Chieh Wang; Jian Jang Huang; Yen-Jen Hung; Liang-Yu Su; Liang-Yi Chen; Yu-Feng Yin;

Isolated Photosystem I Reaction Centers on a Functionalized Gated High Electron Mobility Transistor

2011 / IEEE
By: Mostafa, S.; Tulip, F.S.; Lee, I.; Eliza, S.A.; Islam, S.K.; Ericson, M.N.; Greenbaum, E.;

Thickness and Conductivity Analysis of Molybdenum Thin Film in CIGS Solar Cells Using Resonant Electromagnetic Testing Method

2012 / IEEE
By: Cheng-Chi Tai; Yen-Lin Pan;

Spin-Disorder and Non-Degenerate Energy States in Geometrically Frustrated Materials

2012 / IEEE
By: Yoon Hee Jeong; Yong-Woo Lee; Sam Jin Kim; Woo Jun Kwon; Bo Ra Myoung; Chul Sung Kim;

Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

2012 / IEEE
By: Yuh-Renn Wu; Chi-Kang Li;

Carrier Transport Mechanism of Ni/Ag/Pt Contacts to p-Type GaN

2012 / IEEE
By: Hyunsoo Kim; Kwang-Soon Ahn; Youngjun Park;

The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

2012 / IEEE
By: Wei-Da Hu; Xiao-Dong Wang; Wei Lu; Xiao-Shuang Chen;

Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation

2012 / IEEE
By: Chini, A.; Zanoni, E.; Meneghesso, G.; Fantini, F.; Di Lecce, V.;

Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs

2012 / IEEE
By: Butendheich, R.; Humphreys, C.; Dandan Zhu; Trivellin, N.; Vaccari, S.; Leirer, C.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Hahn, B.;

Enhanced Extraction Efficiency of InGaN/GaN Light-Emitting Diodes by Liquid Phase-Deposited Zinc-Oxide-Textured Window Layer

2012 / IEEE
By: Yuan-Chih Lee; Po-Hsun Lei; Chia-Te Lin;

Effects of Strains and Defects on the Internal Quantum Efficiency of InGaN/GaN Nanorod Light Emitting Diodes

2012 / IEEE
By: Jian Jang Huang; Tzu-Chun Lu; Yu-Ting Wang; Li-Chuan Huang; Liang-Yi Chen; Chun-Hsiang Chang;

High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection by Interface Control

2012 / IEEE
By: Yanhua Zhang; Wenquan Ma; Yang Wei; Kai Cui; Yulian Cao; Jianliang Huang;

Improved Regrowth Interface of AlGaInAs/InP-Buried-Heterostructure Lasers by In-Situ Thermal Cleaning

2012 / IEEE
By: Shirao, M.; Takino, Y.; Arai, S.; Nishiyama, N.; Amemiya, T.; Sato, T.; Sato, N.;

Numerical Study of the Effects of Hetero-Interfaces, Polarization Charges, and Step-Graded Interlayers on the Photovoltaic Properties of (0001) Face GaN/InGaN p-i-n Solar Cell

2012 / IEEE
By: Yen-Kuang Kuo; Ya-Hsuan Shih; Jih-Yuan Chang;

Abnormal Electrical and Optical Characteristics of InGaN-Based LEDs by Current Stress-Time-Dependent Annihilation

2012 / IEEE
By: Jung-Hee Lee; Jae-Hoon Lee;

Blue InGaN Light-Emitting Diodes With Multiple GaN-InGaN Barriers

2012 / IEEE
By: Jih-Yuan Chang; Tsun-Hsin Wang; Yen-Kuang Kuo;

Low-Temperature Bonding of GaN on Si Using a Nonalloyed Metal Ohmic Contact Layer for GaN-Based Heterogeneous Devices

2012 / IEEE
By: Higurashi, E.; Suga, T.; Fukunaga, T.;

Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique

2012 / IEEE
By: Jin-Chai Li; Chia-Cheng Tu; Ching-Hsueh Chiu; Shih-Cheng Huang; Po-Min Tu; Chien-Chung Lin; Zhen-Yu Li; Chun-Yen Chang; Shing-Chung Wang; Hao-Chung Kuo; Tien-Chang Lu; Hsiao-Wen Zan; Wu-Yih Uen;

Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes

2012 / IEEE
By: Su-Ik Park; Jong-In Shim; Han-Youl Ryu; Dong-Soo Shin; Hyun-Sung Kim; Dong-Hyun Jang; Jong-Ik Lee;

Increased Light Extraction From Vertical GaN Light-Emitting Diodes With Ordered, Cone-Shaped Deep-Pillar Nanostructures

2012 / IEEE
By: Ki Seob Shin; Jae In Sim; Ho-Myoung An; Tae Geun Kim; Yun Mo Sung;

Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments

2012 / IEEE
By: Sato, S.; Koide, S.; Abderrahmane, A.; Okada, H.; Sandhu, A.; Ohshima, T.;

Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method

2012 / IEEE
By: Tzeng-Tsong Wu; Peng-Hsiang Weng; Tien-Chang Lu;

Effects of Mechanical Strains on the Characteristics of Top-Gate Staggered a-IGZO Thin-Film Transistors Fabricated on Polyimide-Based Nanocomposite Substrates

2012 / IEEE
By: Chih-Wei Chien; Chang-Yu Lin; Tzong-Ming Lee; Chyi-Ming Leu; Ming-Jiue Yu; Chih-Ming Lai; Chun-Cheng Cheng; Yung-Hui Yeh; Chung-Chih Wu;

Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

2012 / IEEE
By: Armstrong, A.; Min Sun; DasGupta, S.; Palacios, T.; Kaplar, R.J.; Atcitty, S.; Stanley, J.B.; Marinella, M.J.;

Top-Gate Staggered a-IGZO TFTs Adopting the Bilayer Gate Insulator for Driving AMOLED

2012 / IEEE
By: Chung-Chih Wu; Chih-Wei Chien; Hsing-Hung Hsieh; Cheng-Han Wu; Yung-Hui Yeh; Chang-Yu Lin; Ming-Jiue Yu; Chih-Ming Lai; Chun-Cheng Cheng;

Three-Dimensional Analysis of Temperature Distributions Based on Circuit Modeling of Light-Emitting Diodes

2012 / IEEE
By: Dong-Soo Shin; Jong-In Shim; Dong-Pyo Han; Joosun Yun;

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

2012 / IEEE
By: Uren, M.J.; Kuball, M.; Moreke, J.;

Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

2012 / IEEE
By: Eun Suk Hwang; Un Ki Kim; Yoon Jang Chung; Yoonsoo Jung; Jisim Jung; Byoung Keon Park; Cheol Seong Hwang; Sang Ho Rha; Jung-Hae Choi; Tae Joo Park;

A Simplified Physical Model of RF Channel Breakdown in AlGaN/GaN HFETs

2012 / IEEE
By: Bilbro, G.L.; Trew, R.J.; Schimizzi, R.D.;

Heterojunction Intra-Band Tunnel FETs for Low-Voltage SRAMs

2012 / IEEE
By: Datta, S.; Kulkarni, J.P.; Gupta, S.K.; Roy, K.;

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

2012 / IEEE
By: del Alamo, J.A.; Jungwoo Joh; Doutt, D.R.; Merz, T.A.; Chung-Han Lin; Brillson, L.J.; Mishra, U.K.;

A Simplified Broadband Design Methodology for Linearized High-Efficiency Continuous Class-F Power Amplifiers

2012 / IEEE
By: Lei Guan; Tuffy, N.; Brazil, T.J.; Zhu, A.;

Multiharmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers

2012 / IEEE
By: Dellier, S.; Gatard, E.; Maziere, C.; Demenitroux, W.; Quere, R.; Campovecchio, M.;

Widely Tunable High-Efficiency Power Amplifier With Ultra-Narrow Instantaneous Bandwidth

2012 / IEEE
By: Kenle Chen; Peroulis, D.; Xiaoguang Liu;

High-Efficiency Harmonically Terminated Diode and Transistor Rectifiers

2012 / IEEE
By: Falkenstein, E.A.; Ramos, I.; Reveyrand, T.; Roberg, M.; Popovic, Z.;

Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors

2012 / IEEE
By: Vizkelethy, G.; Reed, R.A.; Ramachandran, V.; Pantelides, S.T.; Shen, X.; Schrimpf, R.D.; Zhang, E.X.; King, M.P.; Boos, J.B.; McMorrow, D.;

Influence of Thermal and Fast Neutron Irradiation on dc Electrical Performances of AlGaN/GaN Transistors

2012 / IEEE
By: Berthet, F.; Guhel, Y.; Boudart, B.; Gualous, H.; Trolet, J.L.; Piccione, M.; Gaquiere, C.;

Power Semiconductor Devices: For Variable Speed Drives

2012 / IEEE
By: De Doncker, R.W.; Hudgins, J.L.;

Polarization Matching in AlGaN-Based Multiple-Quantum-Well Deep Ultraviolet Laser Diodes on AlN Substrates Using Quaternary AlInGaN Barriers

2012 / IEEE
By: Satter, M.M.; Yoder, P.D.; Dupuis, R.D.; Shyh-Chiang Shen; Jae-Hyun Ryou; Lochner, Z.;

Gallium nitride-based gas, chemical and biomedical sensors

2012 / IEEE
By: Ren, F.; Pearton, S.J.;

Waveguide Optical Isolators for Integrated Optics

2012 / IEEE
By: Mizumoto, T.; Shoji, Y.; Takei, R.;

Design Methodology for Dual-Band Doherty Power Amplifier With Performance Enhancement Using Dual-Band Offset Lines

2012 / IEEE
By: Rawat, K.; Ghannouchi, F.M.;

Layout of an Experimental Liquid-Metal Circuit Based on MHD Considerations

2012 / IEEE
By: Buhler, L.; Koehly, C.; Mistrangelo, C.;

Design of a 4-W Envelope Tracking Power Amplifier With More Than One Octave Carrier Bandwidth

2012 / IEEE
By: Chin Hsia; Yan, J.J.; Asbeck, P.M.; Kimball, D.F.;

An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3

2012 / IEEE
By: Kobayashi, K.W.;

Physics-Based Modeling of GaN HEMTs

2012 / IEEE
By: Selberherr, S.; Rodle, T.; Murad, S.; Quay, R.; Maroldt, S.; Palankovski, V.; Vitanov, S.;

Design Rules for IGZO Logic Gates on Plastic Foil Enabling Operation at Bending Radii of 3.5 mm

2012 / IEEE
By: Kinkeldei, T.; Zysset, C.; Munzenrieder, N.; Troster, G.;

Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

2012 / IEEE
By: Lake, R.K.; Klimeck, G.; Alam, K.; Khayer, M.A.; Hong-Hyun Park; Sylvia, S.S.;

Calculation of the Nonlinear Junction Temperature for Semiconductor Devices Using Linear Temperature Values

2012 / IEEE
By: Rajaie, A.; Khorshid, A.; Bayba, A.J.; Darwish, A.M.; Hung, H.A.;

A Monolithic AlGaN/GaN HEMT VCO Using BST Thin-Film Varactor

2012 / IEEE
By: Cen Kong; Chen Chen; Jianjun Zhou; Shuwen Jiang; Xiaojian Chen; Hui Li;

AlGaInAs/InP Monolithically Integrated DFB Laser Array

2012 / IEEE
By: Akbar, J.; Haji, M.; Lianping Hou; Bryce, A.C.; Marsh, J.H.;

Analysis and Implementation of Doherty Power Amplifier With Two-Point Envelope Modulation

2012 / IEEE
By: Chul Soon Park; Joon Hyung Kim;

Switching Behavior of Class-E Power Amplifier and Its Operation Above Maximum Frequency

2012 / IEEE
By: Seunghoon Jee; Junghwan Moon; Jungjoon Kim; Junghwan Son; Bumman Kim;

AlGaN/GaN HEMT With Distributed Gate for Channel Temperature Reduction

2012 / IEEE
By: Hung, H.A.; Darwish, A.M.; Ibrahim, A.A.;

Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps

2012 / IEEE
By: Jinn-Kong Sheu; Gou Chung Chi; Chung-Wei Chen; Wei-Chih Lai; Shang-Ju Tu; Po-Cheng Chen; Feng-Wen Huang; Yu-Hsiang Yeh; Ming-Lun Lee;

Next Page