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Topic: Flash Memory

Results

Error-Correcting Codes for Flash Coding
2011 / IEEE
By: Qin Huang; Abdel-Ghaffar, K.A.S.; Shu Lin;
Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer
2011 / IEEE
By: Jang-Sik Lee; Jae Chul Park; Kim, D.M.; Dongsik Kong; Byeong-Hyeok Sohn; Jaeman Jang; Dae Hwan Kim; Il Hwan Cho;
A Statistical Model of Erratic Behaviors in Flash Memory Arrays
2011 / IEEE
By: Chimenton, A.; Olivo, P.; Zambelli, C.;
FDTL: a unified flash memory and hard disk translation layer
2011 / IEEE
By: Shi-Min Hu; Yu-Ping Wang; Gang Tan; Jie Yin; Shi Bai;
Hot/cold clustering for page mapping in NAND flash memory
2011 / IEEE
By: Ilhoon Shin;
Improving performance and lifetime of solid-state drives using hardware-accelerated compression
2011 / IEEE
By: Sungjin Lee; Jihong Kim; Arvind; Fleming, K.; Jihoon Park;
Techniques for improving performance of the FAST (fully-associative sector translation) flash translation layer
2011 / IEEE
By: Da-Wei Chang; Ying-Chih Wu; Hsin-Hung Chen; Ying-Shiuan Pan; Chien-Yu Liu;
Fast erase algorithm using flash translation layer in NAND-type flash memory
2011 / IEEE
By: Dae Man Han;
Architecture exploration of flash memory storage controller through a cycle accurate profiling
2011 / IEEE
By: Sanghyuk Jung; Hoeseung Jung; Yong Ho Song;
Bridging the information gap between buffer and flash translation layer for flash memory
2011 / IEEE
By: Shi-Min Hu; Xue-Liang Liao;
Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device
2011 / IEEE
By: Jong Kyung Park; Byung Jin Cho; Kwon Hong; Moon Sig Joo; Jae Sub Oh; Sung Kyu Im; Seok-Hee Lee; Youngmin Park;
Three-Dimensional Integration Approach to High-Density Memory Devices
2011 / IEEE
By: U-In Chung; Jaikwang Shin; Changjung Kim; Hong-Sun Hwang; Churoo Park; Hojung Kim; Sangbeom Kang; Jaechul Park; Myoung-Jae Lee; Sanghun Jeon; Hyun-Sik Choi;
High-Density Three-Dimensional Stacked nand Flash With Common Gate Structure and Shield Layer
2011 / IEEE
By: Min-Kyu Jeong; Jong-Ho Lee; Byung-Gook Park; Hyungcheol Shin; Sung-Min Joe;
Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory
2011 / IEEE
By: Carts, M.A.; Friendlich, M.; Chen, D.; Oldham, T.R.; LaBel, K.A.; Seidleck, C.M.;
zFTL: power-efficient data compression support for NAND flash-based consumer electronics devices
2011 / IEEE
By: Jin-Soo Kim; Youngjo Park;
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells
2011 / IEEE
By: Gerardin, S.; Bagatin, M.; Czeppel, L.T.; Bertuccio, M.; Beltrami, S.; Visconti, A.; Paccagnella, A.;
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories
2011 / IEEE
By: Bonanomi, M.; Visconti, A.; Paccagnella, A.; Bagatin, M.; Gerardin, S.; Beltrami, S.;
Impacts of Poly-Si Nanowire Shape on Gate-All-Around Flash Memory With Hybrid Trap Layer
2011 / IEEE
By: Ji-Hong Chiang; Lun-Chun Chen; Chao-Kan Yang; Yung-Chun Wu; Hung-Bin Chen; Chun-Yen Chang;
Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory
2011 / IEEE
By: Van Houdt, J.; Van den bosch, G.; Van Aerde, S.; Richard, O.; Douhard, B.; Vrancken, C.; Debusschere, I.; Paraschiv, V.; De Keersgieter, A.; Breuil, L.; Cacciato, A.; Arreghini, A.; Blomme, P.; Kar, G.S.;
Data Archival to SD Card Via Hardware Description Language
2011 / IEEE
By: Todakar, V.S.; Elkeelany, O.;
Cross-Layer Optimizations in Solid-State Drives
2011 / IEEE
By: Jia-Hao Wang; Da-Wei Chang; Wei-Jian Su; Hsin-Hung Chen;
The Shuttle Nanoelectromechanical Nonvolatile Memory
2012 / IEEE
By: Tsai, J.M.-L.; Vaddi, R.; Geng Li Chua; Pott, V.; Kim, T.T.;
A key management framework for AMI networks in smart grid
2012 / IEEE
By: Famolari, D.; Kanda, M.; Ohba, Y.; Das, S.; Das, S.K.;
Technology Roadmap Comparisons for TAPE, HDD, and NAND Flash: Implications for Data Storage Applications
2012 / IEEE
By: Hetzler, S.R.; Fontana, R.E.; Decad, G.;
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions
2012 / IEEE
By: Gerardin, S.; Bagatin, M.; Paccagnella, A.;
Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory
2012 / IEEE
By: Wilcox, E.P.; Friendlich, M.R.; Oldham, T.R.; Castillo, J.; LaBel, K.A.; Eaton, P.H.; Mavis, D.G.; McMorrow, D.; Buchner, S.P.;
Proton-Induced Upsets in 41-nm NAND Floating Gate Cells
2012 / IEEE
By: Schwank, J. R.; Paccagnella, A.; Bagatin, M.; Gerardin, S.; Blackmore, E. W.; Shaneyfelt, M. R.;
Greedy page replacement algorithm for flash-aware swap system
2012 / IEEE
By: Guiping Wang; Shuyu Chen; Mingwei Lin;
Asymmetric flash volume management
2012 / IEEE
By: Minyoung Sung; Kanghee Kim;
Efficient logging of metadata using NVRAM for NAND flash based file system
2012 / IEEE
By: Chul Lee; Seung-Ho Lim;
A parallel flash translation layer based on page group-block hybrid-mapping method
2012 / IEEE
By: Shi Bai; Xue-Liang Liao;
Resource-aware sector translation layer for resource-sensitive nand flash-based storage systems
2012 / IEEE
By: Byoung Young Ahn; Taejin Kim; Keonsoo Ha; Jihong Kim;
On the Capacity and Programming of Flash Memories
2012 / IEEE
By: Hao Li; Anxiao Jiang; Bruck, J.;
An efficient use of PRAM for an enhancement in the performance and durability of NAND storage systems
2012 / IEEE
By: Sangyong Lee; Yong Ho Song; Sanghyuk Jung;
Enhanced UBI layer for fast boot-up times of mobile consumer devices
2012 / IEEE
By: Dongwook Kang;
A technique to improve garbage collection performance for NAND flash-based storage systems
2012 / IEEE
By: Yong Ho Song; Jaehyeong Jeong;
A MPCN-Based Parallel Architecture in BCH Decoders for nand Flash Memory Devices
2011 / IEEE
By: Hsie-Chia Chang; Chih-Hsiang Hsu; Chi-Heng Yang; Yi-Min Lin; Chen-Yi Lee;
Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation
2012 / IEEE
By: Bagatin, M.; Gerardin, S.; Ferlet-Cavrois, V.; Paccagnella, A.;
BEST: Best-effort energy saving techniques for NAND flash-based hybrid storage
2012 / IEEE
By: Hyotaek Shim; Seungryoul Maeng; Jin-Soo Kim;
PCRAM-assisted ECC management for enhanced data reliability in flash storage systems
2012 / IEEE
By: Sanghyuk Jung; Hakyong Lee; Yong Ho Song;
Flash-aware linux swap system for portable consumer electronics
2012 / IEEE
By: Mingwei Lin; Shuyu Chen;
Effect of Accumulated Charge on the Total Ionizing Dose Response of a NAND Flash Memory
2012 / IEEE
By: Kay, M.J.; Oldham, T.R.; Howard, A.; Ingalls, D.; Duncan, A.R.; Gadlage, M.J.;
Ionizing Radiation Effects on Non Volatile Read Only Memory Cells
2012 / IEEE
By: Roizin, Y.; Lisiansky, M.; Corso, D.; Libertino, S.; Palumbo, F.; Finocchiaro, P.; Lombardo, S.; Pace, C.; Principato, F.;
Impact of Nonuniform Doping on Random Telegraph Noise in Flash Memory Devices
2012 / IEEE
By: Mauri, A.; Amoroso, S.M.; Ghetti, A.; Compagnoni, C.M.;
Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate
2012 / IEEE
By: Sung-Kye Park; Bong-Hoon Lee; Moon-Sik Seo; Endoh, T.;
Garbage collection policy to improve durability for flash memory
2012 / IEEE
By: Zhang, X.; Liu, Y.; Xu, G.; Lin, M.;
DABC-NV: A buffer cache architecture for mobile systems with heterogeneous flash memories
2012 / IEEE
By: Park, J.; Bahn, H.; Lee, E.;
Implementing secure file deletion in NANDbased block devices with internal buffers
2012 / IEEE
By: Shin, I.;
A New Programming Scheme for the Improvement of Program Disturb Characteristics in Scaled nand Flash Memory
2012 / IEEE
By: Shirota, R.; Arakawa, H.; Mitiukhina, N.; Fu-Hai Li; Sakamoto, Y.; Nagai, S.; Chen-Hao Huang;
The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings
2012 / IEEE
By: Sung-Min Joe; Jong-Ho Lee; Sung-Kye Park; Kyoung-Rok Han; Bong-Su Jo; Min-Kyu Jeong;
A Novel Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory
2012 / IEEE
By: Tien-Sheng Chao; Chi-Chang Wu; Wen-Luh Yang; Sheng-Hsien Liu;
A New Recess Method for SA-STI nand Flash Memory
2012 / IEEE
By: Ya-Jui Lee; Zih-Song Wang; Chrong Jung Lin; Huei-Haurng Chen; Ying-Chia Li; Yang, R.;
Guest Editorial Special Section on Memory Architectures and Organization
2012 / IEEE
By: Xue, C.J.; Dutt, N.;
Accurate Compact Modeling for Sub-20-nm nand Flash Cell Array Simulation Using the PSP Model
2012 / IEEE
By: Kihwan Choi; Jongwook Jeon; Wookghee Hahn; Myounggon Kang; Il Han Park; Sunghee Yun; Chilhee Chung; Young-Kwan Park; Keun-Ho Lee; Gi-Young Yang;
Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step
2012 / IEEE
By: Ghaffari, M.; Rizk, A.; Cimen, F.; Oruc, F.B.; Okyay, A.K.; Nayfeh, A.;
Underground Localization in 3-D Using Magneto-Inductive Tracking
2012 / IEEE
By: Ellwood, S.A.; Macdonald, D.W.; Trigoni, N.; Markham, A.;
Polycrystalline-Si TFT TANOS Flash Memory Cell With Si Nanocrystals for High Program/Erase Speed and Good Retention
2012 / IEEE
By: Min-Feng Hung; Jiang-Hung Chen; Shun-Cheng Tien; Yung-Chun Wu;
Neutron-Induced Upsets in NAND Floating Gate Memories
2012 / IEEE
By: Visconti, A.; Paccagnella, A.; Ferrario, A.; Bagatin, M.; Beltrami, S.; Frost, C.D.; Gerardin, S.; Gorini, G.; Andreani, C.;
Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel
2012 / IEEE
By: Ming-Jinn Tsai; Tien-Ko Wang; Jen-Wei Cheng; Yi-Chuen Jian; Kuei-Shu Chang-Liao; Li-Jung Liu;
A Concurrency Buffer Control in B-Trees for Flash-Memory Storage Systems
2012 / IEEE
By: Yu-Hsun Lin; Chin-Hsien Wu;
An Accurate Compact Model Considering Direct-Channel Interference of Adjacent Cells in Sub-30-nm nand Flash Technologies
2012 / IEEE
By: Hyungcheol Shin; Byung-Gook Park; Seongjun Seo; Kyunghwan Lee; Ik Joon Chang; Il Han Park; Myounggon Kang;
Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit
2012 / IEEE
By: Jianlin Liu; Yi Shi; Huimei Zhou; Olmedo, M.; Jian-Guo Zheng; Bei Li; Jingjian Ren;
New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory
2012 / IEEE
By: Min-Kyu Jeong; Sung-Min Joe; Jong-Ho Lee; Sung-Kye Park; Kyoung-Rok Han; Myounggon Kang;
Induced Variability of Cell-to-Cell Interference by Line Edge Roughness in nand Flash Arrays
2012 / IEEE
By: Dehaene, W.; Pret, A.V.; Blomme, P.; Poliakov, P.; Corbalan, M.M.; Van Houdt, J.; Verkest, D.; Gronheid, R.;
Demonstration of Split-Gate Type Trigate Flash Memory With Highly Suppressed Over-Erase
2012 / IEEE
By: Masahara, M.; Ogura, A.; Sakamoto, K.; Hayashida, T.; Ishikawa, Y.; Yamauchi, H.; Kamei, T.; Tsukada, J.; O'uchi, S.; Endo, K.; Matsukawa, T.; Yongxun Liu;
Hybrid Floating Gate Cell for Sub-20-nm NAND Flash Memory Technology
2012 / IEEE
By: Breuil, L.; Wellekens, D.; Cacciato, A.; Blomme, P.; Van Houdt, J.; Rosmeulen, M.; Richard, O.; Debusschere, I.; Vrancken, C.; Locorotondo, S.; Kar, G.S.;
The Compact Modeling of Channel Potential in Sub-30-nm NAND Flash Cell String
2012 / IEEE
By: Byung-Gook Park; Dong Hyuk Chae; Kyunghwan Lee; Myounggon Kang; Hyungcheol Shin;
Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory
2012 / IEEE
By: Doo-Hyun Kim; Dong Hua Li; Jung Hoon Lee; Seongjae Cho; Won Bo Shim; Gil Sung Lee; Jungdal Choi; Byung-Gook Park; Wandong Kim; Se Hwan Park; Yoon Kim;
Product Code Schemes for Error Correction in MLC NAND Flash Memories
2012 / IEEE
By: Chakrabarti, C.; Emre, Y.; Chengen Yang;
Novel Microcontrollers With Direct Access to Flash Memory Benefit Implementation of Multi-Optimal Space Vector Modulation
2012 / IEEE
By: Neacsu, D.O.;
Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories
2009 / IEEE / 978-1-4577-0493-2
By: Virtanen, A.; Harboe-Sorensen, R.; Nguyen, D.N.; Irom, F.;
Structural and electrical properties of Tb2TiO5 charge trapping layer memories
2010 / IEEE / 978-1-4244-5261-3
By: Tung-Ming Pan; Ji-Shing Jung; Fa-Hsyang Chen;
Planning updates in multi-application wireless sensor networks
2011 / IEEE / 978-1-4577-0681-3
By: Shamsaie, A.; Habibi, J.;
A cache management strategy to replace wear leveling techniques for embedded flash memory
2011 / IEEE / 978-1-4577-0139-9
By: Boukhobza, J.; Rubini, S.; Olivier, P.;
Accelerated test as a tool for reliability comparison of systems manufactured by different ways
2011 / IEEE / 978-1-61284-666-8
By: Vintr, Z.; Valis, D.;
A 21nm high performance 64Gb MLC NAND flash memory with 400MB/s asynchronous toggle DDR interface
2011 / IEEE / 978-1-61284-175-5
By: Chulbum Kim; Young-Hyun Jun; Young-Ho Lim; Kyehyun Kyung; Dooheon Song; Jin-Man Han; Woopyo Jeong; Changhyun Cho; Yongsik Yim; Seongsoon Cho; PanSuk Kwak; DooSeop Lee; InYoul Lee; Bokeun Kim; Hongsoo Jeon; Seonghwan Seo; Jaeyong Jeong; Jeawoo Lim; Hyeonggon Kim; Taesung Lee; Jinho Ryu;
4-times faster rising VPASS (10V), 15% lower power VPGM (20V), wide output voltage range voltage generator system for 4-times faster 3D-integrated solid-state drives
2011 / IEEE / 978-1-61284-175-5
By: Takeuchi, K.; Hatanaka, T.;
Plugging versus logging: A new approach to write buffer management for solid-state disks
2011 / IEEE / 978-1-4503-0636-2
By: You-Chiuan Su; Li-Pin Chang;
A version-based strategy for reliability enhancement of flash file systems
2011 / IEEE / 978-1-4503-0636-2
By: Pei-Han Hsu; Du, D.H.-C.; Tei-Wei Kuo; Po-Chun Huang; Yuan-Hao Chang;
A study on Schottky Barrier NOR Flash memory
2011 / IEEE / 978-1-4577-0378-2
By: Zhou Fang; Zermin Lin;
Rump sessions
2011 / IEEE / 978-1-61284-175-5
Understanding the impact of power loss on flash memory
2011 / IEEE / 978-1-4503-0636-2
By: Swanson, S.; Grupp, L.; Hung-Wei Tseng;
Development of a tree-type wireless acquisition network with application to vibration tests in variational magnetic field
2011 / IEEE / 978-1-61284-466-4
By: Yang Piao; Kun Fan; Juan Luo; Quan Zhou; Xiaozhao Wang;
MNFTL: An efficient flash translation layer for MLC NAND flash memory storage systems
2011 / IEEE / 978-1-4503-0636-2
By: Yi Wang; Zhiwei Qin; Yong Guan; Zili Shao; Duo Liu;
FPGA bitstream protection with PUFs, obfuscation, and multi-boot
2011 / IEEE / 978-1-4577-0642-4
By: Ugurdag, H.F.; Yildiz, A.; Ozkurt, O.; Goren, S.;
A new IP core for fast error detection and fault tolerance in COTS-based solid state mass memories
2011 / IEEE / 978-1-4577-1056-8
By: Violante, M.; Costenaro, E.; Alexandrescu, D.;
Green high performance storage class memory & NAND flash memory hybrid SSD system
2011 / IEEE / 978-1-61284-660-6
By: Takeuchi, K.;
A highly manufacturable integration technology of 20nm generation 64Gb multi-level NAND flash memory
2011 / IEEE / 978-1-4244-9949-6
By: Keun Woo Lee; Se Kyoung Choi; Sung Wook Park; Sung Joo Hong; Seok Kiu Lee; Jin Woong Kim; Aritome, S.; Sung Kye Park; Gyu Seog Cho; Ki Seog Kim; Hyeon Soo Kim; Myung Kyu Ahn; Sang Deok Kim; Weon Joon Suh; Chan Sun Hyun; Sung Soon Kim; Seung Cheol Lee; Seok Won Cho; Won Sic Woo; Kwang Hee Han; Ju Yeab Lee; Min Kyu Lee; Keum Hwan Noh; Sung Jae Chung; Hye Lyoung Lee; Su Min Yi; Byeong Il Han; Byung In Lee; Dong Hwan Lee; Ji Hyun Seo; Noh Yong Park; Hae Soo Kim; Hyung Seok Kim; Tae Un Youn;
Highly reliable 26nm 64Gb MLC E2NAND (Embedded-ECC & Enhanced-efficiency) flash memory with MSP (Memory Signal Processing) controller
2011 / IEEE / 978-1-4244-9949-6
By: Namjae Lee; Sungkye Park; Byungkook Kim; Seaung-Suk Lee; Hyunyoung Shim; Yeseok Yang; Gihyun Bae; Kun-Ok Ahn; Seokkiu Lee; Aritome, S.; Doyoung Kim; Joongseob Yang; Seungho Chang; Juyeab Lee; Heeyoul Lee; Youngbok Lee; Jumsoo Kim; Hoseok Lee; Youngho Hwang; Byungkeun Ahn; Hankyum Kim;
3D approaches for non-volatile memory
2011 / IEEE / 978-1-4244-9949-6
By: Jungdal Choi; Kwang Soo Seol;
Investigation of reliability issue in tunneling and inter-poly dielectrics in floating gate NAND flash memory cell strings
2011 / IEEE / 978-1-4577-0378-2
By: Jong-Ho Lee; Sung-Min Joe;
A new approach of NAND flash cell trap analysis using RTN characteristics
2011 / IEEE / 978-1-4244-9949-6
By: Hyun-Mog Park; Jaihyuk Song; Sungbok Lee; Daewoong Kang; Young-Hyun Jun; Jeong-Hyuk Choi; Haebum Lee; Dong-jun Lee; Hyungcheol Shin; Chang-Sub Lee; Cheol Song; Chikyoung Lee; Junho Seo; Jun Kim;
An efficient I/O scheduler over Multi-Bank Flash Memory storage systems
2011 / IEEE / 978-1-4244-9698-3
By: Guohui Li; Pei Zhao; Xiaosong Zhao;
A flexible and transparent ReRAM with CdO/TiO2/CdO structure on PET substrate
2011 / IEEE / 978-1-61284-774-0
By: Zhenguo Ji; Liping Zhou; Jinhua Xi; Xiangming Li;
Advanced failure analysis of memory devices
2011 / IEEE / 978-1-4577-0158-0
By: Li, S.X.;
A novel low-voltage hot-carrier (LVHC) programming method for scaled NAND flash cell
2011 / IEEE / 978-1-4244-9949-6
By: Lee, C.H.; Chen, Y.J.; Cheng, C.C.; Huang, J.S.; Cheng, C.H.; Yan, S.G.; Hsu, M.C.; Tsai, P.H.; Wen-Jer Tsai; Chih-Yuan Lu; Chen, K.C.; Lu, T.C.; Han, T.T.;
Extraction of 3-D trap position in NAND flash memory considering channel resistance of pass cells and bit-line interference
2011 / IEEE / 978-1-4244-9949-6
By: Park, S.K.; Bae, J.H.; Jo, B.S.; Lee, J.W.; Lee, M.S.; Han, K.R.; Jung, M.K.; Joe, S.M.; Lee, J.H.; Cho, G.S.; Yi, J.H.;
Study of C4F8 gas for etch process in slow erase failure of flash memory devices
2011 / IEEE / 978-1-4577-0158-0
By: Sang kwon Kim; Ki chae Yoon; Yeong-sil Kim; Sang il Hwang; Young sun Ko;
Characterization and passivation of band gap states in metal-oxide-semiconductor field effect transistors with polycrystalline silicon channel
2011 / IEEE / 978-1-4577-0158-0
By: Jun Suk Chang; Jungwoo Kim; Dong-Hyoub Kim; Tae-Young Jang; Hoichang Yang; Hyunsang Hwang; Rino Choi; Daeseok Lee; Jae Kyeong Jeong;
The design for data collection terminal based on 32-bit Atmel
2011 / IEEE / 978-1-4244-9439-2
By: Yong Fan;

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