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Topic: Flash Memories

Results

Error-Correcting Codes for Flash Coding

2011 / IEEE
By: Qin Huang; Abdel-Ghaffar, K.A.S.; Shu Lin;

Estimation of Trapped Charge Density in SONOS Flash Memory Using a Parallel Capacitor Model

2011 / IEEE
By: Hua-Min Li; Won Jong Yoo; Gang Zhang;

Analysis of the Correlation Between the Programmed Threshold-Voltage Distribution Spread of nand Flash Memory Devices and Floating-Gate Impurity Concentration

2011 / IEEE
By: Wen-Chuan Chao; Sakamoto, Y.; Jian-Ming Jaw; Hung-Ming Hsueh; Chih-Ming Chao; Shirota, R.; Arakawa, H.; Sheng-Fu Yang;

Read Characteristics of Independent Double-Gate Poly-Si Nanowire SONOS Devices

2011 / IEEE
By: Horng-Chih Lin; Tiao-Yuan Huang; Wei-Chen Chen; Zer-Ming Lin;

Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer

2011 / IEEE
By: Jang-Sik Lee; Jae Chul Park; Kim, D.M.; Dongsik Kong; Byeong-Hyeok Sohn; Jaeman Jang; Dae Hwan Kim; Il Hwan Cho;

A Statistical Model of Erratic Behaviors in Flash Memory Arrays

2011 / IEEE
By: Chimenton, A.; Olivo, P.; Zambelli, C.;

FDTL: a unified flash memory and hard disk translation layer

2011 / IEEE
By: Shi-Min Hu; Yu-Ping Wang; Gang Tan; Jie Yin; Shi Bai;

Hot/cold clustering for page mapping in NAND flash memory

2011 / IEEE
By: Ilhoon Shin;

Improving performance and lifetime of solid-state drives using hardware-accelerated compression

2011 / IEEE
By: Sungjin Lee; Jihong Kim; Arvind; Fleming, K.; Jihoon Park;

Techniques for improving performance of the FAST (fully-associative sector translation) flash translation layer

2011 / IEEE
By: Da-Wei Chang; Ying-Chih Wu; Hsin-Hung Chen; Ying-Shiuan Pan; Chien-Yu Liu;

Fast erase algorithm using flash translation layer in NAND-type flash memory

2011 / IEEE
By: Dae Man Han;

Architecture exploration of flash memory storage controller through a cycle accurate profiling

2011 / IEEE
By: Sanghyuk Jung; Hoeseung Jung; Yong Ho Song;

Bridging the information gap between buffer and flash translation layer for flash memory

2011 / IEEE
By: Shi-Min Hu; Xue-Liang Liao;

Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device

2011 / IEEE
By: Jong Kyung Park; Byung Jin Cho; Kwon Hong; Moon Sig Joo; Jae Sub Oh; Sung Kyu Im; Seok-Hee Lee; Youngmin Park;

High-Density Three-Dimensional Stacked nand Flash With Common Gate Structure and Shield Layer

2011 / IEEE
By: Min-Kyu Jeong; Jong-Ho Lee; Byung-Gook Park; Hyungcheol Shin; Sung-Min Joe;

Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

2011 / IEEE
By: Carts, M.A.; Friendlich, M.; Chen, D.; Oldham, T.R.; LaBel, K.A.; Seidleck, C.M.;

zFTL: power-efficient data compression support for NAND flash-based consumer electronics devices

2011 / IEEE
By: Jin-Soo Kim; Youngjo Park;

Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells

2011 / IEEE
By: Gerardin, S.; Bagatin, M.; Czeppel, L.T.; Bertuccio, M.; Beltrami, S.; Visconti, A.; Paccagnella, A.;

Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories

2011 / IEEE
By: Bonanomi, M.; Visconti, A.; Paccagnella, A.; Bagatin, M.; Gerardin, S.; Beltrami, S.;

Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories

2011 / IEEE
By: Nguyen, D.N.; Irom, F.; Virtanen, A.; Harboe-Sorensen, R.;

An Analytical Model of the Propagation Induced Pulse Broadening (PIPB) Effects on Single Event Transient in Flash-Based FPGAs

2011 / IEEE
By: Sterpone, L.; Chipana, R.; Kastensmidt, F.L.; Battezzati, N.;

Analyzing the Effects of TID in an Embedded System Running in a Flash-Based FPGA

2011 / IEEE
By: Fonseca, E.C.P.; Kastensmidt, F.L.; Azambuja, J.R.; Tarrillo, J.; Goncalez, O.; Galhardo, R.;

Impacts of Poly-Si Nanowire Shape on Gate-All-Around Flash Memory With Hybrid Trap Layer

2011 / IEEE
By: Ji-Hong Chiang; Lun-Chun Chen; Chao-Kan Yang; Yung-Chun Wu; Hung-Bin Chen; Chun-Yen Chang;

Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory

2011 / IEEE
By: Van Houdt, J.; Van den bosch, G.; Van Aerde, S.; Richard, O.; Douhard, B.; Vrancken, C.; Debusschere, I.; Paraschiv, V.; De Keersgieter, A.; Breuil, L.; Cacciato, A.; Arreghini, A.; Blomme, P.; Kar, G.S.;

Data Archival to SD Card Via Hardware Description Language

2011 / IEEE
By: Todakar, V.S.; Elkeelany, O.;

Cross-Layer Optimizations in Solid-State Drives

2011 / IEEE
By: Jia-Hao Wang; Da-Wei Chang; Wei-Jian Su; Hsin-Hung Chen;

An Ultra-Low Reset Current Cross-Point Phase Change Memory With Carbon Nanotube Electrodes

2012 / IEEE
By: Jiale Liang; Wong, H.P.; Hong-Yu Chen; Jeyasingh, R.G.D.;

String Current in Decananometer nand Flash Arrays: A Compact-Modeling Investigation

2012 / IEEE
By: Paolucci, G. M.; Lacaita, A. L.; Spinelli, A. S.; Monzio Compagnoni, C.; Miccoli, C.;

Impact of Cell Shape on Random Telegraph Noise in Decananometer Flash Memories

2012 / IEEE
By: Amoroso, S.M.; Asenov, A.; Monzio Compagnoni, C.; Mauri, A.; Brown, A.R.; Ghetti, A.;

Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions

2012 / IEEE
By: Gerardin, S.; Bagatin, M.; Paccagnella, A.;

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

2012 / IEEE
By: Wilcox, E.P.; Friendlich, M.R.; Oldham, T.R.; Castillo, J.; LaBel, K.A.; Eaton, P.H.; Mavis, D.G.; McMorrow, D.; Buchner, S.P.;

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

2012 / IEEE
By: Wang, K.L.W.; Fleetwood, D.M.; En Xia Zhang; Cher Xuan Zhang; Alles, M.L.; Galatsis, K.; Sung Min Kim; Song, E.B.; Schrimpf, R.D.;

Proton-Induced Upsets in 41-nm NAND Floating Gate Cells

2012 / IEEE
By: Schwank, J. R.; Paccagnella, A.; Bagatin, M.; Gerardin, S.; Blackmore, E. W.; Shaneyfelt, M. R.;

Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure

2012 / IEEE
By: Oldham, T.R.; LaBel, K.A.; Friendlich, M.R.; Dakai Chen;

Greedy page replacement algorithm for flash-aware swap system

2012 / IEEE
By: Guiping Wang; Shuyu Chen; Mingwei Lin;

Asymmetric flash volume management

2012 / IEEE
By: Minyoung Sung; Kanghee Kim;

Efficient logging of metadata using NVRAM for NAND flash based file system

2012 / IEEE
By: Chul Lee; Seung-Ho Lim;

A parallel flash translation layer based on page group-block hybrid-mapping method

2012 / IEEE
By: Shi Bai; Xue-Liang Liao;

Resource-aware sector translation layer for resource-sensitive nand flash-based storage systems

2012 / IEEE
By: Byoung Young Ahn; Taejin Kim; Keonsoo Ha; Jihong Kim;

On the Capacity and Programming of Flash Memories

2012 / IEEE
By: Hao Li; Anxiao Jiang; Bruck, J.;

An efficient use of PRAM for an enhancement in the performance and durability of NAND storage systems

2012 / IEEE
By: Sangyong Lee; Yong Ho Song; Sanghyuk Jung;

Enhanced UBI layer for fast boot-up times of mobile consumer devices

2012 / IEEE
By: Dongwook Kang;

A technique to improve garbage collection performance for NAND flash-based storage systems

2012 / IEEE
By: Yong Ho Song; Jaehyeong Jeong;

Investigation of Low Dose Rate and Bias Conditions on the Total Dose Tolerance of a CMOS Flash-Based FPGA

2012 / IEEE
By: LaBel, K.; Wilcox, E.P.; Carts, M.A.; Poongyeub Lee; Nguyen, V.; Rezgui, S.; McCollum, J.; Telecco, N.;

Multiple Error-Correcting WOM-Codes

2012 / IEEE
By: Vardy, A.; Siegel, P.H.; Yaakobi, E.; Wolf, J.K.;

A MPCN-Based Parallel Architecture in BCH Decoders for nand Flash Memory Devices

2011 / IEEE
By: Hsie-Chia Chang; Chih-Hsiang Hsu; Chi-Heng Yang; Yi-Min Lin; Chen-Yi Lee;

Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation

2012 / IEEE
By: Bagatin, M.; Gerardin, S.; Ferlet-Cavrois, V.; Paccagnella, A.;

BEST: Best-effort energy saving techniques for NAND flash-based hybrid storage

2012 / IEEE
By: Hyotaek Shim; Seungryoul Maeng; Jin-Soo Kim;

PCRAM-assisted ECC management for enhanced data reliability in flash storage systems

2012 / IEEE
By: Sanghyuk Jung; Hakyong Lee; Yong Ho Song;

Flash-aware linux swap system for portable consumer electronics

2012 / IEEE
By: Mingwei Lin; Shuyu Chen;

Effect of Accumulated Charge on the Total Ionizing Dose Response of a NAND Flash Memory

2012 / IEEE
By: Kay, M.J.; Oldham, T.R.; Howard, A.; Ingalls, D.; Duncan, A.R.; Gadlage, M.J.;

Ionizing Radiation Effects on Non Volatile Read Only Memory Cells

2012 / IEEE
By: Roizin, Y.; Lisiansky, M.; Corso, D.; Libertino, S.; Palumbo, F.; Finocchiaro, P.; Lombardo, S.; Pace, C.; Principato, F.;

A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface

2012 / IEEE
By: Jaeyong Jeong; Seonghwan Seo; Jaewoo Lim; Hyunggon Kim; Taesung Lee; Jinho Ryu; Chulbum Kim; Young-Hyun Jun; Young-Ho Lim; Kyehyun Kyung; Duheon Song; Jin-Man Han; Kwangil Park; Woopyo Jeong; Changhyun Cho; Yongsik Yim; Seongsoon Cho; Pansuk Kwak; Dooseop Lee; Inyoul Lee; Bokeun Kim; Hongsoo Jeon;

NAND Controller System With Channel Number Detection and Feedback for Power-Efficient High-Speed 3D-SSD

2012 / IEEE
By: Hatanaka, T.; Takeuchi, K.;

Impact of Nonuniform Doping on Random Telegraph Noise in Flash Memory Devices

2012 / IEEE
By: Mauri, A.; Amoroso, S.M.; Ghetti, A.; Compagnoni, C.M.;

Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate

2012 / IEEE
By: Sung-Kye Park; Bong-Hoon Lee; Moon-Sik Seo; Endoh, T.;

Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

2012 / IEEE
By: Corso, D.; Lombardo, S.A.; Finocchiaro, P.; Pace, C.; Principato, F.; Palumbo, F.; Roizin, Y.; Lisiansky, M.; Libertino, S.;

A New Programming Scheme for the Improvement of Program Disturb Characteristics in Scaled nand Flash Memory

2012 / IEEE
By: Shirota, R.; Arakawa, H.; Mitiukhina, N.; Fu-Hai Li; Sakamoto, Y.; Nagai, S.; Chen-Hao Huang;

The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

2012 / IEEE
By: Sung-Min Joe; Jong-Ho Lee; Sung-Kye Park; Kyoung-Rok Han; Bong-Su Jo; Min-Kyu Jeong;

Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius

2012 / IEEE
By: Byung-Gook Park; Myoung-Sun Lee; Jong-Ho Lee; Il Hwan Cho;

Embedded Flash on a Low-Power 65-nm Logic Technology

2012 / IEEE
By: Fong, S.; Ema, T.; Ariyoshi, J.;

High-Reliability Trigate Poly-Si Channel Flash Memory Cell With Si-Nanocrystal Embedded Charge-Trapping Layer

2012 / IEEE
By: Yung-Chun Wu; Hung-Bin Chen; Chun-Yen Chang; Chao-Kan Yang; Ji-Hong Chiang; Lun-Chun Chen;

A New Recess Method for SA-STI nand Flash Memory

2012 / IEEE
By: Ya-Jui Lee; Zih-Song Wang; Chrong Jung Lin; Huei-Haurng Chen; Ying-Chia Li; Yang, R.;

Floating-Gate Corner-Enhanced Poly-to-Poly Tunneling in Split-Gate Flash Memory Cells

2012 / IEEE
By: Tkachev, Y.; Kotov, A.; Xian Liu;

Accurate Compact Modeling for Sub-20-nm nand Flash Cell Array Simulation Using the PSP Model

2012 / IEEE
By: Kihwan Choi; Jongwook Jeon; Wookghee Hahn; Myounggon Kang; Il Han Park; Sunghee Yun; Chilhee Chung; Young-Kwan Park; Keun-Ho Lee; Gi-Young Yang;

Design and Implementation of a Virtual Platform of Solid-State Disks

2012 / IEEE
By: Chin-Ting Kuo; Ying-Chieh Lee; Li-Pin Chang;

Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices

2012 / IEEE
By: Manhong Zhang; Dandan Jiang; Ming Liu; Junning Chen; Bo Zhang; Yong Wang; Zhong Sun; Zongliang Huo;

Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step

2012 / IEEE
By: Ghaffari, M.; Rizk, A.; Cimen, F.; Oruc, F.B.; Okyay, A.K.; Nayfeh, A.;

Polycrystalline-Si TFT TANOS Flash Memory Cell With Si Nanocrystals for High Program/Erase Speed and Good Retention

2012 / IEEE
By: Min-Feng Hung; Jiang-Hung Chen; Shun-Cheng Tien; Yung-Chun Wu;

Two-Step Write Scheme for Reducing Sneak-Path Leakage in Complementary Memristor Array

2012 / IEEE
By: Kyeong-Sik Min; Jun-Myung Choi; Chul-Moon Jung;

Neutron-Induced Upsets in NAND Floating Gate Memories

2012 / IEEE
By: Visconti, A.; Paccagnella, A.; Ferrario, A.; Bagatin, M.; Beltrami, S.; Frost, C.D.; Gerardin, S.; Gorini, G.; Andreani, C.;

Joint Source-Channel Coding and Channelization for Embedded Video Processing With Flash Memory Storage

2012 / IEEE
By: Yiran Li; Tong Zhang; Guiqiang Dong;

A Concurrency Buffer Control in B-Trees for Flash-Memory Storage Systems

2012 / IEEE
By: Yu-Hsun Lin; Chin-Hsien Wu;

An Accurate Compact Model Considering Direct-Channel Interference of Adjacent Cells in Sub-30-nm nand Flash Technologies

2012 / IEEE
By: Hyungcheol Shin; Byung-Gook Park; Seongjun Seo; Kyunghwan Lee; Ik Joon Chang; Il Han Park; Myounggon Kang;

Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit

2012 / IEEE
By: Jianlin Liu; Yi Shi; Huimei Zhou; Olmedo, M.; Jian-Guo Zheng; Bei Li; Jingjian Ren;

New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory

2012 / IEEE
By: Min-Kyu Jeong; Sung-Min Joe; Jong-Ho Lee; Sung-Kye Park; Kyoung-Rok Han; Myounggon Kang;

Induced Variability of Cell-to-Cell Interference by Line Edge Roughness in nand Flash Arrays

2012 / IEEE
By: Dehaene, W.; Pret, A.V.; Blomme, P.; Poliakov, P.; Corbalan, M.M.; Van Houdt, J.; Verkest, D.; Gronheid, R.;

Demonstration of Split-Gate Type Trigate Flash Memory With Highly Suppressed Over-Erase

2012 / IEEE
By: Masahara, M.; Ogura, A.; Sakamoto, K.; Hayashida, T.; Ishikawa, Y.; Yamauchi, H.; Kamei, T.; Tsukada, J.; O'uchi, S.; Endo, K.; Matsukawa, T.; Yongxun Liu;

Hybrid Floating Gate Cell for Sub-20-nm NAND Flash Memory Technology

2012 / IEEE
By: Breuil, L.; Wellekens, D.; Cacciato, A.; Blomme, P.; Van Houdt, J.; Rosmeulen, M.; Richard, O.; Debusschere, I.; Vrancken, C.; Locorotondo, S.; Kar, G.S.;

Nonvolatile Poly-Si TFT Charge-Trap Flash Memory With Engineered Tunnel Barrier

2012 / IEEE
By: Won-Ju Cho; Hee-Wook You;

The Compact Modeling of Channel Potential in Sub-30-nm NAND Flash Cell String

2012 / IEEE
By: Byung-Gook Park; Dong Hyuk Chae; Kyunghwan Lee; Myounggon Kang; Hyungcheol Shin;

Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory

2012 / IEEE
By: Doo-Hyun Kim; Dong Hua Li; Jung Hoon Lee; Seongjae Cho; Won Bo Shim; Gil Sung Lee; Jungdal Choi; Byung-Gook Park; Wandong Kim; Se Hwan Park; Yoon Kim;

Product Code Schemes for Error Correction in MLC NAND Flash Memories

2012 / IEEE
By: Chakrabarti, C.; Emre, Y.; Chengen Yang;

Novel Microcontrollers With Direct Access to Flash Memory Benefit Implementation of Multi-Optimal Space Vector Modulation

2012 / IEEE
By: Neacsu, D.O.;

Analysis of SET propagation in flash-based FPGAs by means of electrical pulse injection

2009 / IEEE / 978-1-4577-0493-2
By: Ferlet-Cavrois, V.; Sterpone, L.; Battezzati, N.;

Annealing of heavy-ion induced floating gate errors: LET and feature size dependence

2009 / IEEE / 978-1-4577-0493-2
By: Harboe-Sorensen, R.; Cellere, G.; Gerardin, S.; Bagatin, M.; Paccagnella, A.; Bonanomi, M.; Beltrami, S.; Visconti, A.;

Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

2009 / IEEE / 978-1-4577-0493-2
By: Virtanen, A.; Harboe-Sorensen, R.; Nguyen, D.N.; Irom, F.;

Structural and electrical properties of Tb2TiO5 charge trapping layer memories

2010 / IEEE / 978-1-4244-5261-3
By: Tung-Ming Pan; Ji-Shing Jung; Fa-Hsyang Chen;

Planning updates in multi-application wireless sensor networks

2011 / IEEE / 978-1-4577-0681-3
By: Shamsaie, A.; Habibi, J.;

A cache management strategy to replace wear leveling techniques for embedded flash memory

2011 / IEEE / 978-1-4577-0139-9
By: Boukhobza, J.; Rubini, S.; Olivier, P.;

Accelerated test as a tool for reliability comparison of systems manufactured by different ways

2011 / IEEE / 978-1-61284-666-8
By: Vintr, Z.; Valis, D.;

A 21nm high performance 64Gb MLC NAND flash memory with 400MB/s asynchronous toggle DDR interface

2011 / IEEE / 978-1-61284-175-5
By: Chulbum Kim; Young-Hyun Jun; Young-Ho Lim; Kyehyun Kyung; Dooheon Song; Jin-Man Han; Woopyo Jeong; Changhyun Cho; Yongsik Yim; Seongsoon Cho; PanSuk Kwak; DooSeop Lee; InYoul Lee; Bokeun Kim; Hongsoo Jeon; Seonghwan Seo; Jaeyong Jeong; Jeawoo Lim; Hyeonggon Kim; Taesung Lee; Jinho Ryu;

4-times faster rising VPASS (10V), 15% lower power VPGM (20V), wide output voltage range voltage generator system for 4-times faster 3D-integrated solid-state drives

2011 / IEEE / 978-1-61284-175-5
By: Takeuchi, K.; Hatanaka, T.;

Digitally synthesized stochastic flash ADC using only standard digital cells

2011 / IEEE / 978-1-61284-175-5
By: Un-Ku Moon; Hershberg, B.; Weaver, S.;

A version-based strategy for reliability enhancement of flash file systems

2011 / IEEE / 978-1-4503-0636-2
By: Pei-Han Hsu; Du, D.H.-C.; Tei-Wei Kuo; Po-Chun Huang; Yuan-Hao Chang;

Flexible 2D layout decomposition framework for spacer-type double pattering lithography

2011 / IEEE / 978-1-4503-0636-2
By: Lucas, K.; Yongchan Ban; Pan, D.;

A study on Schottky Barrier NOR Flash memory

2011 / IEEE / 978-1-4577-0378-2
By: Zhou Fang; Zermin Lin;

Understanding the impact of power loss on flash memory

2011 / IEEE / 978-1-4503-0636-2
By: Swanson, S.; Grupp, L.; Hung-Wei Tseng;

Development of a tree-type wireless acquisition network with application to vibration tests in variational magnetic field

2011 / IEEE / 978-1-61284-466-4
By: Yang Piao; Kun Fan; Juan Luo; Quan Zhou; Xiaozhao Wang;

MNFTL: An efficient flash translation layer for MLC NAND flash memory storage systems

2011 / IEEE / 978-1-4503-0636-2
By: Yi Wang; Zhiwei Qin; Yong Guan; Zili Shao; Duo Liu;

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