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Topic: Fets

Results

Designing FET's and MOST's into A-M radios
1964 / IEEE
By: Blaser, Larry; Cummins, Earl;
A Wien-bridge oscillator with high-amplitude stability
1981 / IEEE
By: Van Der Walt, P.W.;
An autoranging voltmeter circuit without range resistors
1981 / IEEE
By: Hung, L.Y.;
A decade range linearly tunable versatile filter
1981 / IEEE
By: Kumar, U.;
Radial yield variations in semiconductor wafers
1987 / IEEE
By: Bonges, H.A.; Smith, L.D.; Ferris-Prabhu, A.V.; Paulsen, J.K.;
Inelastic Phonon Scattering in Graphene FETs
2011 / IEEE
By: Jing Guo; Chauhan, J.;
Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN
2011 / IEEE
By: Masse, C.; Huang, C.-W.P.; Zhan-Feng Zhou; McPartlin, M.J.; Madan, A.; Cressler, J.D.;
Transistor wars
2011 / IEEE
By: Schuegraf, K.; Ahmed, K.;
Label-Free Detection of DNA by Field-Effect Devices
2011 / IEEE
By: Kataoka-Hamai, C.; Miyahara, Y.;
Performance Comparison of GaSb, Strained-Si, and InGaAs Double-Gate Ultrathin-Body n-FETs
2011 / IEEE
By: Luisier, M.;
Perspectives on Nanotechnology for RF and Terahertz Electronics
2011 / IEEE
By: Hyung Bin Sohn; Chan Wook Baik; Jung Han Choi; SeungNam Cha; Jong Min Kim; Ohyun Kim; Joonhyock Choi;
Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate
2011 / IEEE
By: Wan Sik Hwang; Qingmin Liu; Rui Li; Yeqing Lu; Guangle Zhou; Huili Xing; Seabaugh, A.; Fay, P.; Wistey, M.; Kosel, T.; Qin Zhang; Koswatta, S.; Jenn-Ming Kuo; Haijun Zhu; Chen Chen; Vasen, T.;
Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology
2011 / IEEE
By: Gaskill, D.K.; Eddy, C.R.; Myers-Ward, R.L.; Tedesco, J.L.; Yanqing Wu; Dimitrakopoulos, C.; Farmer, D.B.; Yu-Ming Lin; Jenkins, K.A.; Avouris, P.;
BN/Graphene/BN Transistors for RF Applications
2011 / IEEE
By: Taniguchi, T.; Watanabe, K.; Hsu, A.; Taychatanapat, T.; Han Wang; Palacios, T.; Jarillo-Herrero, P.;
A Compact Model of Quantum Electron Density at the Subthreshold Region for Double-Gate Junctionless Transistors
2012 / IEEE
By: Sung-Jin Choi; Moon-Seok Kim; Duarte, J.P.; Yang-Kyu Choi;
Virtual-Source-Based Self-Consistent Current and Charge FET Models: From Ballistic to Drift-Diffusion Velocity-Saturation Operation
2012 / IEEE
By: Lan Wei; Antoniadis, D.; Mysore, O.;
Functionalized Nanowire-Based Antigen Detection Using Frequency-Based Signals
2012 / IEEE
By: Skafidas, E.; Qiu, W.Z.; Thanh Cong Nguyen;
Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel
2012 / IEEE
By: Samudra, G.; Kai-Tak Lam; Haixia Da; Gengchiau Liang; Sai-Kong Chin;
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs
2012 / IEEE
By: Ghibaudo, G.; Chabane-Sari, N.; Pala, M.G.; Bekaddour, A.;
Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices
2012 / IEEE
By: Wang, K.L.W.; Fleetwood, D.M.; En Xia Zhang; Cher Xuan Zhang; Alles, M.L.; Galatsis, K.; Sung Min Kim; Song, E.B.; Schrimpf, R.D.;
Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment
2012 / IEEE
By: Stake, J.; Vukusic, J.; Habibpour, O.; Andersson, M.A.;
Lifetime Studies of 130 nm nMOS Transistors Intended for Long-Duration, Cryogenic High-Energy Physics Experiments
2012 / IEEE
By: Gui, P.; Deptuch, G. W.; Arora, R.; Cressler, J. D.; Lourenco, N. E.; Hoff, J. R.; Yarema, R. J.; Wu, G.;
Digitally-Controlled Polar Transmitter Using a Watt-Class Current-Mode Class-D CMOS Power Amplifier and Guanella Reverse Balun for Handset Applications
2012 / IEEE
By: Nakatani, T.; Asbeck, P.M.; Larson, L.E.; Kimball, D.F.; Rode, J.;
Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets
2012 / IEEE
By: Magnus, W.; De Meyer, K.; Groeseneken, G.; Leonelli, D.; Kuo-Hsing Kao; Soree, B.; Vandenberghe, W.G.; Verhulst, A.S.;
Field Plate Optimization in Low-Power High-Gain Source-Gated Transistors
2012 / IEEE
By: Silva, S.R.P.; Shannon, J.M.; Young, N.D.; Trainor, M.J.; Sporea, R.A.;
Material Selection for Minimizing Direct Tunneling in Nanowire Transistors
2012 / IEEE
By: Lake, R.K.; Klimeck, G.; Alam, K.; Khayer, M.A.; Hong-Hyun Park; Sylvia, S.S.;
A New Sensing Metric to Reduce Data Fluctuations in a Nanogap-Embedded Field-Effect Transistor Biosensor
2012 / IEEE
By: Chang-Hoon Kim; Yang-Kyu Choi; Hyun Gyu Park; Cheulhee Jung; Kyung-Bok Lee; Jae-Hyuk Ahn;
A Fully-Integrated 3-Level DC-DC Converter for Nanosecond-Scale DVFS
2012 / IEEE
By: Gu-Yeon Wei; Brooks, D.; Wonyoung Kim;
Understanding the Superlinear Onset of Tunnel-FET Output Characteristic
2012 / IEEE
By: Ionescu, A.M.; Lattanzio, L.; De Michielis, L.;
A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels
2012 / IEEE
By: I-Che Lee; Horng-Chih Lin; Chia-Hao Kuo; Tiao-Yuan Huang; Huang-Chung Cheng;
A Novel pH Sensor of Extended-Gate Field-Effect Transistors With Laser-Irradiated Carbon-Nanotube Network
2012 / IEEE
By: I-Che Lee; Wan-Lin Tsai; Yun-Shan Chien; Huang-Chung Cheng; Jung-Chuan Chou;
A Dynamic Slew Correction Circuit for Low Noise Silicon Detector Pre-amplifiers
2012 / IEEE
By: Hart, M.; Thomas, S.; Ip, H.M.D.; French, M.; Prydderch, M.;
Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review
2012 / IEEE
By: Sacchetto, D.; Leblebici, Y.; De Micheli, G.;
Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETs
2012 / IEEE
By: Hyuncher Chong; Johnson, C.S.; Kaushik, V.; Rodgers, M.; Akarvardar, K.; Injo Ok; Kirsch, P.; Jammy, R.; Hobbs, C.; Gausepohl, S.; Kah-Wee Ang;
Waveforms-Only Based Nonlinear De-Embedding in Active Devices
2012 / IEEE
By: Schreurs, D.M.M.-P.; Avolio, G.; Nauwelaers, B.; Vannini, G.; Crupi, G.; Raffo, A.;
Increasing the Selectivity of Pt-Gate SiC Field Effect Gas Sensors by Dynamic Temperature Modulation
2012 / IEEE
By: Spetz, A.L.; Schutze, A.; Andersson, M.; Reimann, P.; Bur, C.;
Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output
2012 / IEEE
By: Byung-Gook Park; Mihee Uhm; Jung Han Lee; Won Hee Lee; Dong Myong Kim; Jin-Moo Lee; Jieun Lee; Dae Hwan Kim; Yong-Joo Jeong;
Piezoresistive Sensing Performance of Junctionless Nanowire FET
2012 / IEEE
By: Woo-Tae Park; Pott, V.; Jianmin Miao; Singh, P.; Dim-Lee Kwong;
Current Enhancement Phenomenon Caused by the Reversible Charge Trapping Effect Under Photoirradiation on Pentacene Field-Effect Transistors
2012 / IEEE
By: Chang Bum Park;
Proton Irradiation-Induced Electrostatic Modulation in ZnO Nanowire Field-Effect Transistors With Bilayer Gate Dielectric
2012 / IEEE
By: Takhee Lee; Yung Ho Kahng; Woojin Park; Minhyeok Choe; Woong-Ki Hong; Gunho Jo;
Deposition of Zeolite Thin Layers Onto Silicon Wafers for Biomedical Use
2012 / IEEE
By: Fiorillo, A.S.;
Plasma-Wave Detectors for Terahertz Wireless Communication
2012 / IEEE
By: Penarier, A.; Coquillat, D.; Nouvel, P.; Arakawa, K.; Hisatake, S.; Tohme, L.; Torres, J.; Blin, S.; Nagatsuma, T.; Teppe, F.; Knap, W.; Varani, L.;
Switchable Magnetless Nonreciprocal Metamaterial (MNM) and its Application to a Switchable Faraday Rotation Metasurface
2012 / IEEE
By: Caloz, C.; Sounas, D.L.; Kodera, T.;
Asymmetric Tunnel Field-Effect Transistors as Frequency Multipliers
2012 / IEEE
By: Huichu Liu; Saripalli, V.; Madan, H.; Datta, S.;
On the Voltage Gain of Complementary Graphene Voltage Amplifiers With Optimized Doping
2012 / IEEE
By: Hong-Yan Chen; Appenzeller, J.;
Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection
2012 / IEEE
By: Lin, S.; Asbeck, P.; Antcliffe, M.; Seo, H.-C.; Moon, J.S.; McGuire, C.; Lee, K.-M.; Campbell, P.M.; Gaskill, D.K.; Nyakiti, L.O.; Le, D.;
Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability
2012 / IEEE
By: Leblebici, Y.; Sacchetto, D.; De Micheli, G.;
Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors
2012 / IEEE
By: Ha Sul Kim; Hui Fang; Takei, K.; Chuang, S.; Plis, E.; Javey, A.; Yu-Lun Chueh; Krishna, S.; Chin-Hung Liu;
Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs
2012 / IEEE
By: Gnani, E.; Reggiani, S.; Gnudi, A.; Baccarani, G.;
A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration
2012 / IEEE
By: Cristoloveanu, S.; Zaslavsky, A.; Le Royer, C.; Wan, J.;
Terahertz Detection by a Homodyne Field Effect Transistor Multiplicative Mixer
2012 / IEEE
By: Verma, R.; Sangwoo Kim; Preu, S.; Gossard, A.C.; Sherwin, M.S.; Vinh, N.Q.; Burke, P.G.;
A Subharmonic Graphene FET Mixer
2012 / IEEE
By: Stake, J.; Yhland, K.; Vukusic, J.; Cherednichenko, S.; Habibpour, O.;
A Nonpiecewise Model for Long-Channel Junctionless Cylindrical Nanowire FETs
2012 / IEEE
By: Duarte, J.P.; Yang-Kyu Choi; Dong-Il Moon; Sung-Jin Choi;
Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD
2012 / IEEE
By: Allen, M.W.; Partridge, J.; Gunn, R.; Fang, Q.; Masaud, T.B.; Ashburn, P.; Sun, K.; Sultan, S.M.; Clark, O.D.; Chong, H.M.H.;
Electrical Properties of Silicon Nanowire Fabricated by Patterning and Oxidation Process
2012 / IEEE
By: Hyo-Sung Lee; Hyun-Mi Kim; Min-Hyun Lee; Ki-Bum Kim; Wanjun Park; Sung-Wook Nam;
A Low-Noise PFM-Controlled Buck Converter for Low-Power Applications
2012 / IEEE
By: Fayed, A.A.; Chengwu Tao;
On the Noise Optimum of FET Broadband Transimpedance Amplifiers
2012 / IEEE
By: Sackinger, E.;
GaAs 8 GHz-band high power FET
1974 / IEEE
By: Maeda, M.; Suyama, K.; Ishikawa, H.; Fukuta, M.;
X-band RF power performance of GaAs FET's
1974 / IEEE
By: Blocker, T.G.; Adams, R.L.; Macksey, H.M.;
High speed GaAs-MeSFET differential amplifier stage with integrated current source
1974 / IEEE
By: Kohn, E.; Beneking, H.;
Design and Stability Analysis of a Low-Voltage Subharmonic Cascode FET Mixer
2012 / IEEE
By: Hu Zijie; Mouthaan, K.;
High frequency MOS digital capacitor
1974 / IEEE
By: Brown, D.M.; Tiemann, J.J.; Engeler, W.E.;
Operation and circuit performance of a new negative resistance most
1974 / IEEE
By: Zuleeg, R.; Lehovec, K.;
Femto-joule logic circuit with enhancement type Schottky barrier FET
1974 / IEEE
By: Okabayashi, H.; Yamada, K.; Muta, H.; Nagahashi, Y.; Tanaka, T.; Suzuki, S.;
Induction module with voltage modulation and repetition capability for ion acceleration
2000 / IEEE
By: Horioka, K.; Watanabe, M.; Takayama, K.; Kishiro, J.; Ogawa, M.; Hasegawa, J.; Shiho, M.; Hotta, E.; Nakajima, M.;
From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation
2011 / IEEE / 978-1-4244-9949-6
By: Hoffmann, T.Y.; Grasser, T.; Roussel, P.J.; Franco, J.; Kaczer, B.; Toledano-Luque, M.; Groeseneken, G.;
Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length
2011 / IEEE / 978-1-4244-9949-6
By: Baud, L.; Brunet, L.; Le Royer, C.; Sanchez, L.; Tabone, C.; Previtali, B.; Xu, C.; Vinet, M.; Batude, P.; Faynot, O.; Poiroux, T.; Thomas, O.; Aussenac, F.; Lafond, D.; Allain, F.; Toffoli, A.;
Ultra-low leakage junction engineering of cell transistor by raised source/drain for logic-compatible 28-nm embedded DRAM
2011 / IEEE / 978-1-4244-9949-6
By: Uejima, K.; Hase, T.;
Transport properties of CVD-grown graphene nanoribbon field-effect transistors
2011 / IEEE / 978-1-61284-244-8
By: Lyons, A.S.; Pop, E.; Chow, E.K.; Behnam, A.;
Intrinsic DC operation and performance potential of 50nm gate length hydrogen-terminated diamond field effect transistors
2011 / IEEE / 978-1-61284-244-8
By: McLelland, H.; Fox, O.J.L.; Moran, D.A.J.; May, P.W.; Russell, S.;
Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band
2011 / IEEE / 978-1-4244-9563-4
By: Heimlich, M.; Esselle, K.P.; Matekovits, L.; Thalakotuna, D.N.P.;
Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
2011 / IEEE / 978-1-61284-244-8
By: Grabinski, W.; Bouvet, D.; Najmzadeh, M.; Ionescu, A.M.;
Investigation on superlattice heterostructures for steep-slope nanowire FETs
2011 / IEEE / 978-1-61284-244-8
By: Reggiani, S.; Maiorano, P.; Gnani, E.; Baccarani, G.; Gnudi, A.;
Scaling of high aspect ratio current limiters for the individual ballasting of large arrays of field emitters
2011 / IEEE / 978-3-00-035081-8
By: Akinwande, A.I.; Velasquez-Garcia, L.F.; Guerrera, S.A.;
Aluminum top-gate ZnO nanowire transistors with improved transconductance
2011 / IEEE / 978-1-61284-244-8
By: Kern, K.; Zschieschang, U.; Hahn, K.; Fenk, B.; Kalblein, D.; Klauk, H.;
Electrical monitoring of gate and active area mask misalignment error
2011 / IEEE / 978-1-61284-175-5
By: Singhee, A.; Bansal, A.; Costrini, G.; Acar, E.;
An energy-efficient heterogeneous CMP based on hybrid TFET-CMOS cores
2011 / IEEE / 978-1-4503-0636-2
By: Mishra, A.; Saripalli, V.; Narayanan, V.; Datta, S.;
A radiation pattern-reconfigurable antenna for wireless communications
2011 / IEEE / 978-1-4244-9563-4
By: Woong Kang; Kangwook Kim;
Conference at a glance
2011 / IEEE / 978-1-61284-244-8
High performance graphene FETs with self-aligned buried gates fabricated on scalable patterned ni-catalyzed graphene
2011 / IEEE / 978-1-4244-9949-6
By: Congqin Miao; Ming Zhang; Bo-Chao Huang; Yanjie Wang; Woo, J.C.S.; Ya-Hong Xie;
Bridging design and manufacture of analog/mixed-signal circuits in advanced CMOS
2011 / IEEE / 978-1-4244-9949-6
By: Lackey, C.O.; Bair, L.A.; Tin Tin Wee; Loke, A.L.S.; Jia Feng; Krishnan, S.; Leary, B.M.; Fang, E.S.; Doyle, B.A.; Fischette, D.M.; Okada, L.A.; Icel, A.B.; Xin Li; Jung-Suk Goo; Zhi-Yuan Wu; Cooper, J.G.; Herden, M.M.; Morgan, J.H.; Mantei, T.; Schwan, C.T.;
Design of Inverting Buck-Boost DC-DC converter with Input-to-Output by-pass capacitor
2011 / IEEE / 978-1-4244-9312-8
By: De Nardo, A.; Di Capua, G.; Femia, N.;
Hidden assumption of face recognition evaluation under different quality conditions
2011 / IEEE / 978-0-9564263-8-3
By: Abboud, A.; Al-Assam, H.; Jassim, S.;
The study of the on-board charger with the bridgeless PFC
2011 / IEEE / 978-988-15581-2-1
By: Xiao Lei; Ye Huiping; Wang Zhifu; Ma Shiben;
Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm gm and 0.76 �-mm Ron
2011 / IEEE / 978-1-61284-244-8
By: Mishra, U.K.; Speck, J.S.; Man Hoi Wong; Singisetti, U.;
Combinational and sequential logic with transistors based on individual carbon nanotubes
2011 / IEEE / 978-1-61284-244-8
By: Klauk, H.; Schmidt, O.G.; Zschieschang, U.; Kalblein, D.; Ryu, H.;
Noise characterisation of transport properties in single wall carbon nanotube field-effect transistors
2011 / IEEE / 978-1-4577-0192-4
By: Sydoruk, V.A.; Vitusevich, S.A.; Offenhausser, A.; Bosman, G.; Ural, A.; Petrychuk, M.V.;
CMOS compatible nanowires for biosensing
2011 / IEEE / 978-1-4503-0636-2
By: Criscione, J.M.; Routenberg, D.A.; Rajan, N.K.; Vacic, A.; Park, J.; Stern, E.; Reed, M.; Fahmy, T.M.;
Noise in graphene and carbon nanotube devices
2011 / IEEE / 978-1-4577-0192-4
By: Fiori, G.; Betti, A.; Iannaccone, G.;
Metal pad failure phenomena of biosensor due to spontaneous nickel silicide formation
2011 / IEEE / 978-1-4577-0158-0
By: Seok Jae Lee; Jae Sub Oh; Boung Ju Lee;
Batteryless MEMS flow sensor within prosthetic vascular graft
2011 / IEEE / 978-1-4244-9277-0
By: Singh, P.; Hamidullah, M.; Li-Shiah Lim; Cairan He; Han-Hua Feng; Woo-Tae Park;
Detect VR noise coupling sources through near field scanning
2011 / IEEE / 978-1-4577-0811-4
By: Luoh, A.; Xiaoning Ye;
Effects of atomic disorder on carrier transport in Si nanowire transistors
2011 / IEEE / 978-1-61284-418-3
By: Minari, H.; Mori, N.; Kamakura, Y.; Watanabe, T.; Zushi, T.;
A comparative variability analysis for CMOS and CNFET 6T SRAM cells
2011 / IEEE / 978-1-61284-857-0
By: Almudever, C.G.; Rubio, A.;
Atomic force microscopy based nano manipulation towards CNT-ISFET pH sensing system
2011 / IEEE / 978-1-61284-777-1
By: Margis, M.R.; Chalamalasetty, S.N.S.; Wejinya, U.C.; Zhuxin Dong;
Fundamentals and current status of steep-slope tunnel field-effect transistors
2011 / IEEE / 978-1-4577-0704-9
By: Seabaugh, A.;
High-frequency analog GNR-FET design criteria
2011 / IEEE / 978-1-4577-0708-7
By: Reggiani, S.; Gnani, E.; Gnudi, A.; Imperiale, I.; Baccarani, G.;
An investigation on steep-slope and low-power nanowire FETs
2011 / IEEE / 978-1-4577-0708-7
By: Gnani, E.; Baccarani, G.; Gnudi, A.; Reggiani, S.; Maiorano, P.;
Fundamentals and current status of steep-slope tunnel field-effect transistors
2011 / IEEE / 978-1-4577-0708-7
By: Seabaugh, A.;
Substrate integrated waveguide balanced tripler
2011 / IEEE / 978-1-4577-0321-8
By: Zhang Bo; Wang Ting-xia; Yu Hong-xi; Yang Fei; Zhu Zheng-xian;

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