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Topic: Drain-source Current

Results

Ionizing Radiation Effects on Non Volatile Read Only Memory Cells
2012 / IEEE
By: Roizin, Y.; Lisiansky, M.; Corso, D.; Libertino, S.; Palumbo, F.; Finocchiaro, P.; Lombardo, S.; Pace, C.; Principato, F.;
A novel double field-plate power high electron mobility transistor based on AlGaN/GaN for performance improvement
2011 / IEEE / 978-1-61284-653-8
By: Rajabi, S.; Fathipour, M.; Mahabadi, S.E.J.; Moghadam, H.A.; Orouji, A.A.;
Field effect in silicon nanostructure fabricated by Atomic Force Microscopy nano lithography
2011 / IEEE / 978-1-61284-846-4
By: Larki, F.; Dehzangi, A.; Hassan, J.; Hamidon, M.N.; Hutagalung, S.D.; Saion, E.B.;
Analytical modeling of an ion-implanted silicon MESFET in post-anneal condition
1989 / IEEE
By: Pal, B.B.; Chattopadhyay, S.N.;
A stable indium-phosphide diffused junction field-effect transistor with high gain and low leakage
1989 / IEEE
By: Zeisse, C.R.; Moazed, K.L.; Saunier, P.; Messick, L.J.; Nguyen, R.;
Effect of radiation and surface recombination on the characteristics of an ion-implanted GaAs MESFET
1990 / IEEE
By: Pal, B.B.; Singh, V.K.; Mishra, S.;
The effect of surface recombination on the frequency-dependent characteristics of an ion-implanted GaAs OPFET
1990 / IEEE
By: Mishra, S.; Pal, B.B.; Singh, V.K.;
GaAs OPFET characteristics considering the effect of gate depletion with modulation due to incident radiation
1992 / IEEE
By: Pal, B.B.; Chattopadhyay, S.N.;
Effect of traps on the response of a photoexcited GaAs MESFET
1992 / IEEE
By: Chen, Y.J.; Srinivas, V.; Buchner, S.;
Quarter-micrometer low-noise pseudomorphic GaAs HEMTs with extremely low dependence of the noise figure on drain-source current
1993 / IEEE
By: Wenger, J.;
Field effect in multilayered YBaCuO/PrBaCuO devices
1993 / IEEE
By: Bernstein, P.; Villegier, J.C.; Jager, A.; Force, L.; Bok, J.;
Time dependent analysis of an ion-implanted GaAs OPFET
1994 / IEEE
By: Mishra, S.; Chattopadhyay, S.N.; Pal, B.B.; Khan, R.U.; Singh, S.;
A noise model for high electron mobility transistors
1994 / IEEE
By: Anwar, A.F.M.; Kuo-Wei Liu;
Scaling rule for OPFET
1996 / IEEE
By: Chattopadhyay, S.N.; Pal, B.B.;
Gated-four-probe a-Si:H TFT structure: a new technique to measure the intrinsic performance of a-Si:H TFT
1997 / IEEE
By: Kanicki, J.; Chun-Ying Chen;
A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameter measurements
1999 / IEEE
By: Chartier, E.; Barataud, D.; Noblanc, O.; Siriex, D.; Quere, R.; Brylinski, C.;
Analysis of GaAs OPFET with improved optical absorption under back illumination
1999 / IEEE
By: Roy, N.S.; Khan, R.U.; Pal, B.B.;
Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD
1999 / IEEE / 0-7803-5410-9
By: Ishikawa, H.; Egawa, T.; Umeno, M.; Jimbo, T.;
Construct GaAs FET DC model from drain-port DC power and conductance
1999 / IEEE / 0-7803-5761-2
By: Lin, F.; Liu, L.; Leong, M.S.; Kooi, P.S.;
Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire
2001 / IEEE
By: Ishikawa, H.; Guang-Yuan Zhao; Egawa, T.; Jimbo, T.; Umeno, H.;
The electrical effects of DNA as the gate electrode of MOS transistors
2002 / IEEE / 0-7803-7478-9
By: Roe, K.J.; Leeson, R.; Kalambur, A.T.; Dashiell, M.W.; Kolodzey, J.; Rabolt, J.F.;
Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors
2002 / IEEE / 0-7803-7478-9
By: Pearton, S.J.; Fitch, R.; Onstine, A.H.; Gila, B.P.; Ren, F.; Kim, J.; Mehandru, R.; Luo, B.; Irokawa, Y.; Crespo, A.; Via, D.; Abernathy, C.R.; Sewell, J.; Jenkins, T.; Gillespie, J.;
Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose
2003 / IEEE
By: Kin Kiong Lee; Itoh, H.; Ohshima, T.;
DC and RF characteristics of E-mode Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs
2003 / IEEE
By: Tao-Hsuan Chou; Hsing-Yuan Tu; Shey-Shi Lu; Wen-Chung Wu; Ping-Yu Chen; Hsien-Chin Chiu; Yo-Sheng Lin;
2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT
2005 / IEEE
By: Chang, E.Y.; Chu, L.H.; Chang, C.Y.; Lien, Y.C.; Chen, S.H.;
Terahertz radiation from high electron mobility transistors induced by ultrafast optical gate switching
2005 / IEEE / 0-7803-9348-1
By: Kondo, T.; Hirakawa, K.;
The Impact of Multiple-Gated Layout on the Drain-Source Current of pseudomorphic-HEMTS
2006 / IEEE / 0-7803-9744-4
By: Syamsuri Yaakob; Zaiki Awang; Mohd Nizam Osman; Abdul Fatah Awang Mat; Mohamed Razman Yahya;
Device Characteristics of HEMT Structures based on Backgate Contact Method
2006 / IEEE / 0-7803-9730-4
By: Norman Fadhil Idham, M.; Abdul Fatah, A.M.; Mohamed Razman, Y.; Sabtu, I.; Ahmad Ismat, A.R.; Soetedjo, H.; Nurul Afzan, O.;
High Performance Vertical-Type Organic Transistors And Organic Light Emitting Transistors
2007 / IEEE / 978-1-4244-1130-6
By: Kudo, K.; Toguchi, S.; Endoh, H.;
Simulation of Active-Matrix Electrophoretic Display Response Time Optimization by Dual-Gate a-Si:H TFT With a Common Gate Structure
2008 / IEEE
By: Shu Yang; Hai Jing;
Device Model for Ballistic CNFETs Using the First Conducting Band
2008 / IEEE
By: Lombardi, F.; Hashempour, H.;
Single-walled carbon nanotube-based field-effect transistors (non-reviewed)
2008 / IEEE / 978-1-4244-1883-1
By: Xiao, Z.; Sharma, H.;
Charge-Gated Thin-Film Transistors for High Resolution Digital Imaging Applications
2008 / IEEE
By: Taghibakhsh, F.; Karim, K.S.;
Electrostatic properties of molecular gated BioFETs
2008 / IEEE / 978-1-4244-1665-3
By: Shaked, M.; Rosenwaks, Y.; Levy, I.; Cohen, A.; Doron, A.; Shaya, O.;
Microwave operation of sub-micrometer gate surface channel MESFETs in polycystalline diamond
2009 / IEEE / 978-3-9812668-0-1
By: Giovine, E.; Conte, G.; Rossi, M.C.; Sinisi, F.; Corsaro, A.; Calvani, P.; Limiti, E.;
Transparent ZnO Thin-Film Transistors on Glass and Plastic Substrates Using Post-Sputtering Oxygen Passivation
2009 / IEEE
By: Yu Sheng Chen; Shih-Hua Hsiao; Kuang Chung Liu; Meng Lun Wu; Chien Cheng Liu; JianJang Huang; Gong-Ru Lin;
Improving performance in single field plate power High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN
2009 / IEEE / 978-1-4244-4952-1
By: Peyvast, N.; Fathipour, M.; Azadvari, R.;
Diamond MESFET technology development for microwave integrated circuits
2009 / IEEE / 978-1-4244-4749-7
By: Sinisi, F.; Corsaro, A.; Calvani, P.; Limiti, E.; Rossi, M.C.; Ciccognani, W.; Giovine, E.; Conte, G.;
Pentacene based organic thin-film transistor as gas sensor
2009 / IEEE / 978-1-4244-5204-0
By: Bo Liu; Ping Sun; Xian Li; Xiao-Song Du; Guang-Zhong Xie;
A compact model of fully-depleted surrounding-gate (SG) MOSFETs with a doped body
2008 / IEEE / 978-1-4244-2071-1
By: YunSeop Yu; Namki Cho; SungWoo Hwang;
Interface-trap modeling for silicon-nanowire MOSFETs
2010 / IEEE / 978-1-4244-5429-7
By: Shihuan Lin; Guojun Zhu; Xing Zhou; Zuhui Chen;
�-sexithiophene based organic thin film transistors as gas sensor
2010 / IEEE / 978-1-4244-8026-5
By: Ping Sun; Xian Li; Hui-Ling Tai; Guang-Zhong Xie; Song-Qi Fu;
Ethanol gas sensors based on copper phthalocyanine thin-film transistors
2010 / IEEE / 978-1-4244-8026-5
By: Ya-Dong Jiang; Xian Li; Song-Qi Fu; Jian-Fei Yan; Hui-Ling Tai; Xiao-Song Du; Guang-Zhong Xie;

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