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Topic: Doping Profiles

Results

A digital profiler for the characterization of semiconductors
1981 / IEEE
By: Matsinger, B.; Masse, D.J.; Matsinger, J.;
Laser-based structure studies of silicon and gallium arsenide
1986 / IEEE
By: Streetman, B.G.; Crook, G.E.;
Vertically Integrated Unidirectional Biristor
2011 / IEEE
By: Jae-Sub Oh; Sungho Kim; Sung-Jin Choi; Dong-Il Moon; Yang-Kyu Choi; Young-Su Kim;
Pocket Implant-Dependent Channel Mobility in Advanced p-MOSFETs With Strain Engineering
2011 / IEEE
By: Youn Sung Choi; Baldwin, G.; Ekbote, S.;
Nitrogen Vacancy and Magnetic Property in Cu-Doped AlN From First-Principles Calculations
2012 / IEEE
By: Ying-De Zhang; Kyeong-Sub Kim; Kwang-Pyo Chae; Jae-Kwang Lee; Byung-Sub Kang; Suhk-Kun Oh; Seong-Cho Yu;
Surface-Charge-Collection-Enhanced High-Sensitivity High-Stability Silicon Photodiodes for DUV and VUV Spectral Ranges
2012 / IEEE
By: Haspeslagh, L.; Nihtianov, S.; Shi, L.; Nanver, L.K.; Gottwald, A.; Scholze, F.;
Superconducting Mechanism Through Direct and Redox Layer Doping in Pnictides
2012 / IEEE
By: Husain, M.; Singh, S.K.; Awana, V.P.S.; Kishan, H.;
Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE
2012 / IEEE
By: Quankui Yang; Aidam, R.; Driad, R.;
Growth, Emission and Scintillation Properties of Tb-Sc Doped LuAG Epitaxial Films
2012 / IEEE
By: Kucera, M.; Beitlerova, A.; Onderisinova, Z.; Hanus, M.; Nikl, M.;
Magneto-Optical Properties of Ni:ZnO Nanorods
2012 / IEEE
By: Hsu, H.S.; Chiu, S.H.; Huang, J.C.A.;
Single-Event Response of the SiGe HBT Operating in Inverse-Mode
2012 / IEEE
By: Moen, K.A.; Phillips, S.D.; Cressler, J.D.; Lourenco, N.E.;
Total Dose Effects on Bipolar Integrated Circuits at Low Temperature
2012 / IEEE
By: Johnston, A.H.; Thorbourn, D.O.; Swimm, R.T.;
Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition
2012 / IEEE
By: Vandervorst, W.; Loo, R.; Berger, P.R.; Growden, T.A.; Ramesh, A.; Caymax, M.; Douhard, B.;
Numerical Modeling and Optimization of Diode Pumped Heavily-Erbium-Doped Fluoride Fiber Lasers
2012 / IEEE
By: Jianfeng Li; Jackson, S.D.;
Design of Transmission Fibers and Doped Fiber Amplifiers for Mode-Division Multiplexing
2012 / IEEE
By: Askarov, D.; Kahn, J.M.;
Gain Equalization for Few-Mode Fiber Amplifiers Beyond Two Propagating Mode Groups
2012 / IEEE
By: Ip, E.;
Analysis of Phosphorus-Doped Silicon Oxide Layers Deposited by Means of PECVD as a Dopant Source in Diffusion Processes
2012 / IEEE
By: Reinecke, H.; Rentsch, J.; Hofmann, M.; Trogus, D.; Biro, D.; Wagenmann, D.; Keding, R.; Fallisch, A.;
A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction
2012 / IEEE
By: Dan, S.S.; Ionescu, A.M.; Grabinski, W.; Le Royer, C.; Biswas, A.;
Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities
2012 / IEEE
By: Tat Ngai; Jammy, R.; Injo Ok; Baykan, M.O.; Young, C.D.; Akarvardar, K.; Kah-Wee Ang; Kirsch, P.D.; Hobbs, C.; Majhi, P.; Gausepohl, S.; Rodgers, M.P.;
Characterization of doping profiles in impatt diodes by spreading resistance and secondary ion mass spectroscopy
1974 / IEEE
By: Tsai, J.C.C.; Anand, R.P.;
Effect of the ion mass and energy on the response of 70-nm SOI transistors to the ion deposited charge by direct ionization
2009 / IEEE / 978-1-4577-0493-2
By: Aubry-Fortuna, V.; Bournel, A.; Flament, O.; Sauvestre, J.-E.; Gaillardin, M.; Raine, M.;
Collected charge analysis for a new advanced transient model by TCAD simulation in 90nm technology
2009 / IEEE / 978-1-4577-0493-2
By: Castellani-Coulie, K.; Duzellier, S.; Bezerra, F.; Hubert, G.; Artola, L.;
Solution processed Al-doped ZnO nanostructures
2010 / IEEE / 978-1-4244-5261-3
By: Linklater, R.; Kemmitt, T.;
Landscape for semiconductor analysis: Issues and challenges
2011 / IEEE / 978-1-4577-0158-0
By: Kinam Kim; Gyeong-Su Park;
A novel and direct experimental observation of the discrete dopant effect in ultra-scaled CMOS devices
2011 / IEEE / 978-1-4244-9949-6
By: Huang, R.M.; Tsai, C.H.; Chung, S.S.; Hsieh, E.R.; Liang, C.W.; Tsai, C.T.;
Practical application of 2D dopant profiling by LV-SEM
2011 / IEEE / 978-1-4577-0158-0
By: Kim, H.J.; Kim, W.; Kwak, N.Y.; Yang, J.M.; Hyun, H.Y.; Hyun, M.S.;
Preparation of Yb3+-doped silica-based glass for high power laser applications
2011 / IEEE / 978-1-61284-088-8
By: Ying Han; LanTian Hou; GuiYao Zhou; ChangMing Xia;
Automated substrate resistance extraction in nanoscale VLSI by exploiting a geometry-based analytical model
2011 / IEEE / 978-83-932075-2-7
By: Dimopoulos, M.G.; Bontzios, Y.I.; Hatzopoulos, A.A.;
Sensor protection using nonlinear properties of Erbium doped Zinc Oxide (EZO) thin films prepared by sol-gel method
2011 / IEEE / 978-1-4244-9277-0
By: Mohan, D.; Purmima; Kumar, V.;
Application of multi-lateral double diffused field ring in ultrahigh-voltage device MOS transistor design
2011 / IEEE / 978-1-4244-8161-3
By: Guo Jiaming; Sheu Gene; Yang Shaoming; Tasi Jung Ruey;
Counter-lightly-doped-drain (C-LDD) structure for Multi-level cell (MLC) NOR flash memory free of drain disturb
2011 / IEEE / 978-1-4577-0708-7
By: Xing Zhang; Yimao Cai; Ru Huang;
Electrical and optical properties of ion implanted SOI-based photonic crystals
2011 / IEEE / 978-1-4244-8340-2
By: Galli, M.; Lo Savio, R.; Franzo, G.; Cardile, P.; Faolain, L.O.; Priolo, F.; Krauss, T.F.;
Influence of Alq3:C545T on Luminescence of Blue LED
2011 / IEEE / 978-1-4577-0755-1
By: Bi Changdong; Li Yanfei; Zhang Fanghui;
Efficiency Improvement by Optimization of Absorber Layer and n-Layer in a-Si: H/a-SiGe:H Advanced Thin Film Solar Cells
2011 / IEEE / 978-1-4577-1797-0
By: Kosarian, A.; Jelodarian, P.;
Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications
2011 / IEEE / 978-1-4577-0509-0
By: Missous, M.; Kostakis, I.; Saeedkia, D.;
TCAD process simulation for light effect improvement of ion sensitive field effect transistor
2011 / IEEE / 978-1-61284-846-4
By: Hussin, M.R.M.; Kadir, R.A.; Syono, M.I.;
Pedestal collector optimization for high speed SiGe:C HBT
2011 / IEEE / 978-1-61284-166-3
By: Sibaja-Hernandez, A.; Van Huylenbroeck, S.; Vanherle, W.; Decoutere, S.; De Meyer, K.; Venegas, R.; Lee, W.; Radisic, D.; Vleugels, F.; You, S.;
Design and optimization of a 250nm SOI LDMOSFET
2011 / IEEE / 978-1-61284-172-4
By: Luo, X.; Napoli, E.; Udrea, F.; Camuso, G.;
Investigation of InGaP/InGaAs pseudomorphic triple doped-channel field-effect transistors
2011 / IEEE / 978-1-4577-1997-4
By: Jia-Cing Jhou; Jung-Hui Tsai; Jhih-Jhong Ou-Yang;
Integrated nanosystems with junctionless crossed nanowire transistors
2011 / IEEE / 978-1-4577-1516-7
By: Kina, J.; Panchapakeshan, P.; Narayanan, P.; Moritz, C.A.; Chi On Chui;
Advanced contact and junction technologies for improved parasitic resistance and short channel immunity in FinFETs beyond 22nm node
2011 / IEEE / 978-1-4577-1756-7
By: Ang, K.-W.; Jammy, R.; Kirsch, P.D.; Hobbs, C.; Gausepohl, S.; Gunji, M.; Franca, D.L.; Rodgers, M.; Ok, I.; Hung, P.Y.; Min, B.-G.;
Magnetoelectric properties of MgB2 superconductor by SiC doping
2011 / IEEE / 978-1-4244-7853-8
By: Ringer, S.P.; Rong Kun Zheng; Wai Kong Yeoh; Wong, D.C.K.; Shi Xou Dou; Xun Xu; Wen Xian Li;
Precise comparison of two-dimensional dopant profiles measured by electron holography and scanning capacitance microscopy
2011 / IEEE / 978-1-4577-2141-0
By: Noh-Yeal Kwak; Jeoung Woo Kim; Moon Seop Hyun; Jung Ho Yoo; Won Kim; Shaislamov, U.; Jun-Mo Yang; Joong Keun Park;
Investigations of optical and scintillation properties of Tm3+-doped YAlO3
2011 / IEEE / 978-1-4673-0120-6
By: Sugiyama, M.; Yanagida, T.; Totsuka, D.; Yoshikawa, A.; Yokota, Y.; Fujimoto, Y.;
Structural and Frequency Dependence Dielectric Properties of Magnesium Doped Nickel Ferrite
2011 / IEEE / 978-1-4577-2037-6
By: Shirsath, S.E.; Patange, S.M.; Lohar, K.S.; Jadhav, S.S.;
Thermal conductivity measurements of nitrogen-doped Ge2Sb2Te5
2011 / IEEE / 978-1-4577-1431-3
By: Ong, W.L.; Malen, J.A.; Schlesinger, T.E.; Bain, J.A.; Chun Chia Tan; Luping Shi; Rong Zhao; Tow Chong Chong;
SCS Nano-Structures Fabricated by Hybrid process of HNA selective etching and oxidization
2011 / IEEE / 978-1-4577-2141-0
By: Zhao, A.; Wengang Wu; Xiaofei Wang; Xiaomei Yu;
Sol-gel derived aluminum doped nanocrystalline zinc oxide for hydrogen gas sensing
2011 / IEEE / 978-1-4577-1756-7
By: Jayatissa, A.H.; Yue Hou;
Analytical model for ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors
2011 / IEEE / 978-1-4577-1756-7
By: Zhang, Z.Y.; Wang, S.G.;
Incidence angle-dependent transport across a single graphene p-n junction
2011 / IEEE / 978-1-4577-1756-7
By: Comfort, E.; Sutar, S.; Ji Ung Lee;
Influence of magnesium doping on synthesized hydroxyapatite using the wet precipitation method
2011 / IEEE / 978-606-544-078-4
By: Berdich, K.; Monchau, F.; Ioanovici, T.; Bereteu, L.; Traisnel, M.; Hivart, P.;
Signal shape of a PET detector based on LSO:Ce,Ca crystals and SiPM
2011 / IEEE / 978-1-4673-0120-6
By: Argentieri, A.; Collazuol, G.; Bisogni, M.G.; De Luca, G.; Corsi, F.; Del Guerra, A.; Piemonte, C.; Marzocca, C.;
Analysis of DC properties of SDR IMPATT structure by double iterative method designed at different microwave frequency bands
2011 / IEEE / 978-1-4577-1917-2
By: Bhattacharyya, S.; Deyasi, A.;
Effect of oxygen ambient during POCl3 diffusion on the performance of silicon solar cells
2011 / IEEE / 978-1-4244-9965-6
By: Saravanan, S.; Kumar, D.; Suratkar, P.;
Half-Terahertz SiGe BiCMOS technology
2012 / IEEE / 978-1-4577-1318-7
By: Rucker, H.; Fox, A.; Heinemann, B.;
DC and low-frequency noise optimization of four-gate transistors
2012 / IEEE / 978-1-4577-1117-6
By: Deen, M.J.; Marinov, O.; Villanueva, J.A.L.; Rodriguez-Bolivar, S.; Godoy, A.; Rodriguez, A.L.; Tejada, J.A.J.;
Sol gel dip coated Aluminium doped zinc oxide films and their properties
2011 / IEEE / 978-1-4673-0074-2
By: Perumal, S.; Sivaramamoorthy, K.; Kalaivanan, A.; Murali, K.R.;
Surface, structural and optical analysis of Fe doped nanocrystalline ZnO films as transducer
2011 / IEEE / 978-1-4673-0074-2
By: Chaitra, V.; Uma, V.; Shamala, K.S.;
Analysis and modeling of vertical non-uniform doping in bulk MOSFETs for circuit simulation
2012 / IEEE / 978-1-4577-1117-6
By: Hu, C.; Niknejad, A.; Sachid, A.; Venugopalan, S.; Karim, M.A.; Chauhan, Y.S.; Khandelwal, S.;
Effect of ge-dosing profile of exponentially-doped base on the internal quantum efficiency of a SiGe solar cell
2012 / IEEE / 978-1-4577-1546-4
By: Kolince, K.M.; Aziz, H.M.; Huqe, M.R.; Chowdhury, M.I.B.; Uddin, M.S.;
2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance
2011 / IEEE / 978-1-4244-9965-6
By: Tonini, D.; Magnone, P.; Zanuccoli, M.; De Rose, R.; Sangiorgi, E.; Galiazzo, M.; Fiegna, C.; Guo, H.-W.; Frei, M.; Cellere, G.;
Impact of bulk defects in hydrogenated amorphous Si layers on performance of high efficiency HeteroJunctions solar cells assessed by 2D modeling
2012 / IEEE / 978-1-4673-0192-3
By: Garros, X.; Coignus, J.; Lachaume, R.; Reimbold, G.; Munoz, D.; Scheiblin, P.;
The study of optical behaviour porous silicon (PSI) doped with Erbium (Er) by photoluminescence technique
2011 / IEEE / 978-1-4673-0020-9
By: Abdullah, S.; Ikhsan, N.I.; Rusop, M.;
New approach for modeling processes of doping redistribution during oxidization
2012 / IEEE / 978-617-607-138-9
By: Berezhansky, V.;
Optimum doping for n+p silicon solar cell and the J-V characteristic
2012 / IEEE / 978-1-4577-0798-8
By: binti A Wahab, N.; Khan, S.A.;
Enhancement of Doping Concentration in P-Type SiGe Thermoelectric Alloy with the Addition of CrSi2
2012 / IEEE / 978-1-4673-0967-7
By: Vashaee, D.; Krasinski, J.S.; Zamanipour, Z.; Rouhani, P.; Tayebi, L.;
An Investigation of Abnormal Program Phenomena with S/D Junctions and Dopant Profiles for Sub-20 nm NAND Flash Memory Devices
2012 / IEEE / 978-1-4673-1081-9
By: Jiyul Park; Myoung Kwan Cho; Sunghoon Cho; Byoungjun Park; Sungwook Park; Gihyun Bae; Kun-Ok Ahn; Pyunghwa Kim; Yunbong Lee; Sungjo Park; Hae Chang Yang; Sukkwang Park; Min Sang Park; Milim Park; Sangjo Lee;
Simple FinFET gate doping technique for dipole-engineered Vt tuning and CET scaling
2012 / IEEE / 978-1-4577-2084-0
By: Huang, J.; Rodgers, M.P.; Akarvardar, K.; Ang, K.W.; Ok, I.; Matthews, K.; Veksler, D.; Hobbs, C.; Ngai, T.; Jammy, R.; Kirsch, P.; Gausepohl, S.C.; Majhi, P.; Young, C.; Li, H.; Vivekanand, S.;
Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-amorphised silicon
2012 / IEEE / 978-1-4673-1257-8
By: Cristiano, F.; Boninelli, S.; Hackenberg, M.; Bazizi, M.; Quillec, M.; Fazzini, P.F.; Mangelinck, D.; Blavette, D.; Cojocaru, O.; Tavernier, C.; Boulenc, P.; Duchaine, J.; Torregrosa, F.; Spiegel, Y.; Qiu, Y.; Essa, Z.;
Modeling challenges of advanced doping technologies
2012 / IEEE / 978-1-4673-1257-8
By: Liu, C.-W.; Wang, A.C.; Wu, J.; Tsai, G.; Yu, T.-H.; Chien-Tai Chan; Tzer-Min Shen; Ya-Yun Cheng;
Analytical analysis of a p-n junction with arbitrary shaped doping profile
2012 / IEEE / 978-1-4673-0238-8
By: Zimmermann, H.; Milovanovic, V.;
Enhancement of Phosphorus Dopant Activation and Diffusion Suppression by Fluorine Co-Implant in Epitaxially Grown Germanium
2012 / IEEE / 978-1-4577-1865-6
By: Saraswat, K.C.; Nainani, A.; Seunghwa Ryu; Lin, J.-Y.J.; Ju Hyung Nam; Woo-Shik Jung;
Selective Epitaxial Germanium Growth on Silicon - Trench Fill and In Situ Doping
2012 / IEEE / 978-1-4577-1865-6
By: Wood, B.; Miao Jin; Jiping Li; Yi-Chiau Huang; Yihwan Kim; Sanchez, E.;
Simultaneous carrier transport enhancement and variability reduction in Si MOSFETs by insertion of partial monolayers of oxygen
2012 / IEEE / 978-1-4673-0997-4
By: Mears, R.J.; Xu, N.; King-Liu, T.-J.; Hytha, M.; Huang, X.; Yiptong, A.; Cody, N.W.; Stephenson, R.J.; Takeuchi, H.; Damrongplasit, N.;
Atom Probe Tomography for 3D-dopant analysis in FinFET devices
2012 / IEEE / 978-1-4673-0847-2
By: Vandervorst, W.; Gilbert, M.; Kumar, A.; Gajula, D.R.; Florakis, A.; Zschaetzsch, G.; Mody, J.; Horiguchi, N.; Togo, M.; Sasaki, Y.; Kambham, A.K.;
Calibration techniques for scanning microwave microscopy
2012 / IEEE / 978-1-4673-0442-9
By: Wallis, T.M.; Kienberger, F.; Huber, H.; Kopanski, J.J.; Kabos, P.; Curtin, A.E.; Imtiaz, A.;
Gain equalization for few-mode fiber amplifiers with more than two propagating mode groups
2012 / IEEE / 978-1-4577-1527-3
By: Ip, Ezra;
Micro-Emulsion Synthesis, Surface Modification, and Photophysical Properties of ${\rm Zn}_{1-x}~{\rm Mn}_{\rm x} {\rm S}$ Nanocrystals for Biomolecular Recognition
2012 / IEEE
By: Mohagheghpour, E.; Moztarzadeh, F.; Rabiee, M.; Tahriri, M.; Ashuri, M.; Sameie, H.; Salimi, R.; Moghadas, S.;
Effect of 3d Metal (Co and Ni) Doping on the Superconductivity of FeSe $_{0.5}$Te $_{0.5}$
2012 / IEEE
By: Tandon, R.P.; Kumar, A.; Awana, V.P.S.;
Effect of Structural Disorders on Magnetocaloric Effect in $\hbox{La}_{2/3-{\rm x}}\hbox{Gd}_{\rm x}\hbox{Sr}_{1/3-{\rm y}}\hbox{Ba}_{\rm y}\hbox{MnO}_{3}$
2011 / IEEE
By: Xiaoshan Wu; Fengming Zhang; Zhengsheng Jiang; Rubin Xie; Qiyun Xie; Bin Lv; Qing Ji;
Effect of Doping Elements on the Damping Constant of $({\hbox {Ni-Fe}})_{1-{ x}}{\hbox {M}}_{ x}$ ( ${\hbox {M}}={\hbox {Ga}}$, Ag, Mo, and W) Films
2012 / IEEE
By: Yamaguchi, M.; Shimada, Y.; Mitsuzuka, Y.; Endo, Y.;
Effect of Tl$^{+}$ and Sm$^{2+}$ Concentrations on Afterglow Suppression in CsI:Tl, Sm Crystals
2012 / IEEE
By: Miller, S.R.; Ovechkina, E.E.; Nagarkar, V.V.; Brecher, C.; Gaysinskiy, V.;
$V_{T} - V_{\rm SUB}$ Characterization of AlGaN/GaN HFET With p-Type Body Layer
2011 / IEEE
By: Jin-Ping Ao; Sugimoto, M.; Kikuta, D.; Cheng-Yu Hu; Ohno, Y.;
Influence of yttrium Content on the Ce1 and Ce2 Luminescence Characteristics in $({\rm Lu}_{1-{\rm x}}{\rm Y}_{\rm x})_{2}{\rm SiO}_{5}:{\rm Ce}$ Single Crystals
2012 / IEEE
By: Prusa, P.; Mares, J.A.; Mihokova, E.; Nikl, M.; Horodysky, P.; Jary, V.; Beitlerova, A.; Chewpraditkul, W.;
Concentration Dependence of VUV-UV-Visible Luminescence of ${\hbox{Nd}}^{3+}$ and ${\hbox{Gd}}^{3+}$ in
2012 / IEEE
By: Martincik, J.; Yoshikawa, A.; Suyama, T.; Beitlerova, A.; Nikl, M.; Fukuda, K.; Cechak, T.; Baratova, A.; Ishizu, S.;
Crystal Growth and Scintillation Properties of Ho-Doped Lu$_{3}$Al$_{5}$O $_{12}$ Single C
2012 / IEEE
By: Fujimoto, Y.; Yanagida, T.; Sugiyama, M.; Yoshikawa, A.; Totsuka, D.; Futami, Y.; Kurosawa, S.; Yokota, Y.;
The Effect of B Doping on the Martensitic Transitions, Magnetocaloric and Magnetic Properties in Ni $_{48}$Mn $_{39}$In
2012 / IEEE
By: Zhidong Zhang; Wei Liu; Wen-Cheng Chang; Chih-Chieh Hsieh; Bo Li; Xinguo Zhao;
Fabrication of a $\hbox{TiN}_{x}/\hbox{Ni/Au}$ Contact on ZnO Films With High Thermal Stability and Low Resistance
2011 / IEEE
By: Chai, J.W.; Ong, J.L.T.; Chi, D.Z.; Yang, M.; Wang, S.J.; Chua, S.J.; Feng, Y.P.; Pan, J.S.; Zhang, Z.;
Accurate calculation of field and carrier distributions in doped semiconductors
2012 / American Institute of Physics
By: Wenji Yang; Jianping Tang; Hongchun Yu; Yanguo Wang;
Effect of molecular p-doping on hole density and mobility in poly(3-hexylthiophene)
2012 / American Institute of Physics
By: P. Pingel; R. Schwarzl; D. Neher;
Schottky solar cells based on graphene nanoribbon/multiple silicon nanowires junctions
2012 / American Institute of Physics
By: Chao Xie; Jiansheng Jie; Biao Nie; Tianxin Yan; Qiang Li; Peng Lv; Fangze Li; Mingzheng Wang; Chunyan Wu; Li Wang; Linbao Luo;
A model determining optimal doping concentration and material’s band gap of tunnel field-effect transistors
2012 / American Institute of Physics
By: William G. Vandenberghe; Anne S. Verhulst; Kuo-Hsing Kao; Kristin De Meyer; Bart Sorée; Wim Magnus; Guido Groeseneken;
Vertically stacked individually tunable nanowire field effect transistors for low power operation with ultrahigh radio frequency linearity
2012 / American Institute of Physics
By: Yi Song; Jun Luo; Xiuling Li;
Electronic structure and magnetic properties of sub-3 nm diameter Mn-doped SnO2 nanocrystals and nanowires
2013 / American Institute of Physics
By: Tahereh Sabergharesou; Ting Wang; Ling Ju; Pavle V. Radovanovic;
Doping level and work function control in oxidative chemical vapor deposited poly (3,4-ethylenedioxythiophene)
2007 / American Institute of Physics
By: Sung Gap Im; Karen K. Gleason; Elsa A. Olivetti;
Comment on Three-dimensional atom probe studies of an InxGa1xNGaN multiple quantum well structure: Assessment of possible indium clustering [Appl. Phys. Lett. 90, 061903 (2007)]
2007 / American Institute of Physics
By: C. Kisielowski; T. P. Bartel;
Optical gain measurements in porous silicon planar waveguides codoped by erbium and ytterbium ions at 1.53¼m
2007 / American Institute of Physics
By: Adel Najar; Joël Charrier; Nathalie Lorrain; Lazhar Haji; Mehrezi Oueslati;
Extraordinary optical gain from silicon implanted with erbium
2007 / American Institute of Physics
By: M. A. Lourenço; R. M. Gwilliam; K. P. Homewood;
A method to identify shallow dopants in semiconductor nanowires
2007 / American Institute of Physics
By: H. B. Huo; C. Liu; L. Dai; L. P. You; W. Q. Yang; R. M. Ma; Y. F. Zhang; G. G. Qin;
eneSurfactant effects associated with Te-doped InPAs alloys
2007 / American Institute of Physics
By: J. G. Cederberg; S. R. Lee;

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