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Topic: Cvd Coatings

Results

Wear Mechanisms During Sliding of Ti64 Balls Against Bare and HFCVD Polycrystalline-Diamond-Coated WC-Co Exchangeable Inserts

2012 / IEEE
By: Fanqing Jiang; Nan Huang; Leng, Y.X.; Qiang Li;

Combinatorial Characterization of Chemiresistive Films Using Microhotplates

2012 / IEEE
By: Lahr, D.L.; Hertz, J.L.; Semancik, S.;

Diamond Detectors for UV and X-Ray Source Imaging

2012 / IEEE
By: Trucchi, D.M.; Conte, G.; Allegrini, P.; Girolami, M.; Salvatori, S.; Ralchenko, V.G.;

Integration of high quality top-gated graphene field effect devices on 150 mm substrate

2011 / IEEE / 978-1-61284-244-8
By: Sung-Hoon Lee; Hyun-Jong Chung; Jinseong Heo; Sunae Seo; U-In Chung; Jaikwang Shin; Heejun Yang;

Synthesis and raman response of multiwalled-carbon nanotubes decorated with gold nanobowls prepared via galvanic replacement of silver nanoparticles

2011 / IEEE / 978-1-61284-777-1
By: Obliosca, J.M.; Fan-Gang Tseng; Pen-Cheng Wang;

Study of silicon nitride film embedded with silicon quantum dots

2011 / IEEE / 978-1-61284-777-1
By: Pei Ling Li; Chien Wei Liu; Bau Tong Dai; Chie Gau;

Second-order susceptibility �sup>(2) in Si waveguides

2011 / IEEE / 978-1-4244-8340-2
By: Fedus, K.; Dierre, B.; Pavesi, L.; Yeremian, A.; Borga, E.; Bianco, F.; Bettotti, P.; Cazzanelli, M.; Pucker, G.; Ghulinyan, M.; Pierobon, R.; Pitanti, A.;

In-situ absorption measurements for solar cell current determination during thin-film silicon PECVD

2011 / IEEE / 978-1-4244-9965-6
By: Muthmann, S.; Paetzold, U.W.; Meier, M.; Gordijn, A.; Schmitz, R.; Muck, A.;

CVD-diamond external cavity Raman laser operating at 1632 nm

2011 / IEEE / 978-0-9775657-8-8
By: Nemec, M.; Sulc, J.; Jelinkova, H.; Kitzler, O.; Jelinek, M.; Kubecek, V.;

Thermocompression bonding of Ag-MWCNTs nanocomposite films as an alternative die-attach solution for high temperature packaging of SiC devices

2012 / IEEE / 978-1-4673-1965-2
By: Smet, V.; Razeeb, K.M.; Mathewson, A.; Jamal, M.;

MgxZn1xO-based photodetectors covering the whole solar-blind spectrum range

2008 / American Institute of Physics
By: Z. G. Ju; C. X. Shan; D. Y. Jiang; J. Y. Zhang; B. Yao; D. X. Zhao; D. Z. Shen; X. W. Fan;

Fabrication of poly-Si films by continuous local thermal chemical vapor deposition on flexible quartz glass substrate

2008 / American Institute of Physics
By: T. Nakamura; H. Kuraseko; K. Hanazawa; H. Koaizawa; Y. Uraoka; T. Fuyuki; A. Mimura;

Drift current dominated terahertz radiation from InN at low-density excitation

2008 / American Institute of Physics
By: K. I. Lin; J. T. Tsai; T. S. Wang; J. S. Hwang; M. C. Chen; G. C. Chi;

Chemical vapor deposition graphene as structural template to control interfacial molecular orientation of chloroaluminium phthalocyanine

2011 / American Institute of Physics
By: Hong Ying Mao; Rui Wang; Yu Wang; Tian Chao Niu; Jian Qiang Zhong; Ming Yang Huang; Wei Chen; Dong Chen Qi; Kian Ping Loh; Andrew Thye Shen Wee;

Soft x-ray measurements using photoconductive type-IIa and single-crystal chemical vapor deposited diamond detectors

2008 / American Institute of Physics
By: A. S. Moore; C. D. Bentley; J. M. Foster; G. Goedhart; P. Graham; E. Hellewell; M. J. Taylor;

Characterization of single crystal chemical vapor deposition diamond detectors for neutron spectrometry

2012 / American Institute of Physics
By: F. Gagnon-Moisan; A. Zimbal; R. Nolte; M. Reginatto; H. Schuhmacher;

South pole bang-time diagnostic on the National Ignition Facility (invited)

2012 / American Institute of Physics
By: D. H. Edgell; D. K. Bradley; E. J. Bond; S. Burns; D. A Callahan; J. Celeste; M. J. Eckart; V. Yu. Glebov; D. S. Hey; G. Lacaille; J. D. Kilkenny; J. Kimbrough; A. J. Mackinnon; J. Magoon; J. Parker; T. C. Sangster; M. J. Shoup; C. Stoeckl; T. Thomas; A. MacPhee;

Electrical characteristics of MOSFETs using low-pressure chemical-vapor-deposited oxide

1988 / IEEE
By: Lee, J.; Hu, C.; Hegarty, C.;

Polysilicon transistors fabricated on plasma-deposited amorphous silicon

1988 / IEEE
By: Ipri, A.C.; Kaganowicz, G.;

Passivation of GaAs FET's with PECVD silicon nitride films of different stress states

1988 / IEEE
By: Cibuzar, G.T.; Chang, E.Y.; Pande, K.P.;

Stacked capacitor DRAM process using photo-CVD Ta/sub 2/O/sub 5/ film

1988 / IEEE
By: Yamagishi, K.; Tarui, Y.; Matsui, M.; Shimizu, H.; Ono, S.; Aoki, H.;

p-channel amorphous silicon TFTs with high hole mobility

1988 / IEEE
By: Oda, S.; Matsumura, M.; Katoh, S.; Adachi, N.;

GaAs-on-Si: a GaAs IC manufacturer's perspective

1988 / IEEE
By: Welch, B.M.; Shen, Y.D.; Wilson, M.R.; Fan, J.C.C.; Salerno, J.P.; McCullough, R.E.; Lee, J.W.;

An amorphous Si TFT array with TaO_x/SiN_x double layered insulator for liquid crystal displays

1988 / IEEE
By: Tsutsu, N.; Nanno, Y.; Kawaguchi, T.; Takeda, E.; Nagata, S.; Ishihara, S.-i.; Tamura, T.;

Electrical properties of PECVD SiO/sub x/N/sub y/:H prepared by microwave plasma

1988 / IEEE
By: Yelon, A.; Wertheimer, M.R.; Klemberg-Sapieha, J.E.; Blain, S.; Rabiller, P.;

Intrinsic stress in silicon nitride and silicon dioxide films prepared by various deposition techniques

1988 / IEEE
By: Wagner, P.; Kanicki, J.; Angilello, J.; Karasinsk, J.;

High field conduction in poly-p-xylylene thin film

1988 / IEEE
By: Mizutani, T.; Ieda, M.; Takai, Y.; Mori, T.;

A high-performance submicron CMOS two-level metal technology incorporating a plasma CVD TEOS interlevel dielectric

1988 / IEEE
By: Hey, H.P.W.; Leung, C.W.; Lawrence, C.W.; Harrus, A.S.; Hills, G.W.; Chen, M.L.; Thoma, M.J.; Cochran, W.T.;

CVD tungsten metallization and electron beam lithography for fabricating submicron interconnects for advanced ULSI

1988 / IEEE
By: Mattox, R.J.; Wilson, S.R.;

Reactive ion etching of thick CVD tungsten films

1988 / IEEE
By: Jucha, B.; Davis, C.;

Thermal budgeting in a double level metal process with CVD tungsten as first metal

1988 / IEEE
By: Kuehne, J.; Huffman, C.; Gale, R.J.; Smith, G.C.; Weaver, T.;

A comparison of planarization properties of TEOS and SiH/sub 4/ PECVD oxides

1988 / IEEE
By: Magnella, C.G.; Fleck, E.; Ingwersen, T.;

An electromigration and related resistance increase phenomenon on a tungsten filled via hole structure

1988 / IEEE
By: Matsuoka, F.; Kanzaki, K.; Iwai, H.; Nakata, R.; Itoh, H.; Hama, K.;

Planarization of dielectric layers for multilevel metallization

1988 / IEEE
By: Castel, E.D.; Riley, P.E.;

High-performance Al/sub 0.15/Ga/sub 0.85/As/In/sub 0.53/Ga/sub 0.47/As MSM photodetectors grown by OMCVD

1989 / IEEE
By: Hong, W.P.; Bhat, R.; Chang, G.K.;

Charge storage and charge decay in silicon dioxide

1988 / IEEE
By: Sessler, G.M.; Gunther, P.;

A thermally isolated microstructure suitable for gas sensing applications

1988 / IEEE
By: Senturia, S.D.; Huff, M.A.; Howe, R.T.;

As-deposited low-strain LPCVD polysilicon

1988 / IEEE
By: Fan, L.S.; Muller, R.S.;

Surface-micromachining processes for electrostatic microactuator fabrication

1988 / IEEE
By: Howe, R.T.; Lober, T.A.;

Fracture strain of LPCVD polysilicon

1988 / IEEE
By: Muller, R.S.; Tai, Y.C.;

Charging, long-term stability, and TSD measurements of SiO/sub 2/ electrets

1989 / IEEE
By: Gunther, P.;

Charging, long-term-stability, and TSC-measurements of SiO/sub 2/-electrets

1988 / IEEE
By: Gunther, P.;

Superlattices and multilayers in hydrogenated amorphous-silicon devices

1989 / IEEE
By: Miyazaki, S.; Hirose, M.;

Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD

1989 / IEEE
By: Feng, M.; Wang, G.W.; Ito, C.; Lau, C.; Liaw, Y.P.; Kaliski, R.;

Two-step annealing technique for leakage current reduction in chemical-vapor-deposited Ta/sub 2/O/sub 5/ film

1989 / IEEE
By: Nakata, M.; Shinriki, H.; Mukai, K.; Nishioka, Y.;

Neodymium-doped silica optical waveguide laser on silicon substrate

1989 / IEEE
By: Shimizu, M.; Kitagawa, T.; Hibino, Y.; Sugita, A.; Hanawa, F.;

Polysilicon transistors fabricated on silicon implanted amorphous silicon

1990 / IEEE
By: Policastro, S.; Ipri, A.C.; Pancholy, D.;

Study of etch rate characteristics of SF/sub 6//He plasmas by response-surface methodology: effects of interelectrode spacing

1989 / IEEE
By: Riley, P.E.; Hanson, D.A.;

Unusually abrupt switching in submicrometer thin-film transistors using a polysilicon film with enhanced grain size

1990 / IEEE
By: Hajjar, J.-J.J.; Yamauchi, N.; Reif, R.;

Tungsten plug technology using substitution of W for Si

1990 / IEEE
By: Kobayashi, N.; Saitou, M.; Suzuki, M.;

Breakdown of ZnSe under conditions associated with water tree formation

1990 / IEEE
By: Kim, S.; King, J.;

Electromigration performance of CVD-W/Al-alloy multilayered metallization

1990 / IEEE
By: Ondrusek, J.C.; Martin, C.A.; McPherson, J.W.;

CVD tungsten and tungsten silicide for multilevel metallization

1989 / IEEE
By: Wu, S.; Beers, A.; Mendoca, J.; Rosler, R.S.; Price, J.B.;

Optical waveguides and SIMOX characterisation

1989 / IEEE
By: Davies, D.E.; Seifouri, M.; Kassim, N.M.; Benson, T.M.; Burnham, M.;

Polyoxide thinning limitation and superior ONO interpoly dielectric for nonvolatile memory devices

1991 / IEEE
By: Arai, N.; Mori, S.; Yoshikawa, K.; Kaneko, Y.;

Electrostatic deposition of CVD particles for fabrication of ultrafine ceramic filter

1991 / IEEE
By: Yamamoto, H.;

Deep submicron Cu planar interconnection technology using Cu selective chemical vapor deposition

1989 / IEEE / 0-7803-0817-4
By: Amazawa, T.; Awaya, N.; Arita, Y.; Matsuda, T.;

High speed and low power consumption DMT integrated circuits based on direct-coupled FET logic circuits

1989 / IEEE / 0-7803-0817-4
By: Kohno, M.; Hida, H.; Ogawa, Y.; Tsukada, Y.; Shibahara, K.; Fujii, M.; Misaki, T.; Shimizu, K.; Toyoshima, H.;

UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs

1991 / IEEE
By: Nakata, M.; Shinriki, H.;

Reduction of p/sup +/-n/sup +/ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors

1991 / IEEE
By: Schwartz, P.V.; Prinz, E.J.; Matutinovic-Krstelj, Z.; Sturm, J.C.;

Characteristics of LPCVD WSi/sub 2//n-Si Schottky contacts

1991 / IEEE
By: Shenai, K.;

Radiation detector with a-SiC/c-Si heterojunction diode structure

1989 / IEEE
By: Mito, Y.; Hirao, T.; Kitagawa, M.; Yasuno, Y.;

Development of thin film resistor and abrasion protective layer for thermal printing head

1989 / IEEE
By: Korechika, T.; Kuramasu, K.; Hirao, T.; Kitagawa, M.; Tomioka, T.;

Pressure sensor using polycrystalline germanium films prepared by plasma assisted chemical vapor deposition

1989 / IEEE
By: Miyashita, S.; Kimura, N.; Kamimura, K.; Homma, T.; Onuma, Y.;

A single-pass, in-situ planarization process utilizing TEOS for double-poly, double-metal CMOS technologies

1989 / IEEE
By: Sharma, G.; Mehta, S.;

Interaction of metal with underlying dielectric films in multilevel interconnect systems

1989 / IEEE
By: Chiang, C.; Wu, K.; Mittal, S.; Yip, L.C.; Fraser, D.; Lee, M.;

Effect of selective tungsten contact fills on manufacturing issues

1989 / IEEE
By: Alburn, B.; Blumenthal, R.;

A comparison of a two layer metal system built with selective CVD W plugs and elevated temperature, sputtered Al(Cu)

1989 / IEEE
By: Sellers, J.A.; Mattox, R.J.; Wilson, S.R.;

Properties of LPCVD titanium nitride for ULSI metallization

1989 / IEEE
By: Sherman, A.;

Area selective gold MOCVD for VLSI electronics

1989 / IEEE
By: Colgate, S.D.; Simon, C.G.; Schoenfeld, D.W.; House, V.E.; Palenik, G.J.;

Effect of arsenic implantation on electrical characteristics of LPCVD WSi/sub 2//n-Si Schottky contacts

1991 / IEEE
By: Shenai, K.;

Possible three-terminal device with YBCO angle grain boundary

1991 / IEEE
By: Sasahara, H.; Yamashita, T.; Chen, J.; Hirotsu, Y.; Kurosawa, H.; Suzuki, H.;

Growth and characterization of diamond films on nondiamond substrates for electronic applications

1991 / IEEE
By: Glass, J.T.; Williams, B.E.; Stoner, B.R.; Zhu, W.;

The electrical properties and device applications of homoepitaxial and polycrystalline diamond films

1991 / IEEE
By: Gildenblat, G.S.; Badzian, A.; Grot, S.A.;

Germanium thin film growth onto high T/sub c/ superconducting films

1989 / IEEE
By: Tonouchi, M.; Kobayashi, T.; Yoshizako, Y.; Hashimoto, K.; Sakaguchi, Y.;

Fabrication of submicrometer features in Y-Ba-Cu-O superconducting thin films

1989 / IEEE
By: Cheeks, T.L.; Rogers, C.T.; Venkatesan, T.; Craighead, H.G.; Chan, S.-W.; England, P.;

Laser trimming of SiON components for integrated optics

1991 / IEEE
By: Gleine, W.; Muller, J.;

Perpendicular magnetic anisotropy in iron films produced by laser chemical vapour deposition of Fe(CO)/sub 5/

1990 / IEEE
By: Lunney, J.G.; Decrouez, C.; Enrech, M.; Armstrong, J.V.; Coey, J.M.D.;

Electrical and photoelectric properties of a-Si:H deposited by direct photo-CVD (for solar cell applications)

1988 / IEEE
By: Matsunami, H.; Yoshimoto, M.; Fuyuki, T.;

23.9% monolithic multijunction solar cell

1988 / IEEE
By: Chung, B.-C.; Virshup, G.F.; Werthen, J.G.;

A V-grooved GaAs solar cell

1988 / IEEE
By: Thomas, R.D.; Wilt, D.M.; Landis, G.A.; Fatemi, N.; Bailey, S.G.; Arrison, A.;

Recent advances in high-efficiency InGaAs concentrator cells

1988 / IEEE
By: Gee, J.M.; Virshup, G.F.; MacMillan, H.F.; Lewis, C.R.; Ristow, M.L.; Werthen, J.G.; Kaminar, N.R.; Ford, C.W.; Arau, B.A.; Kuryla, M.S.;

Improvements in InP solar cells

1988 / IEEE
By: Keavney, C.; Haven, V.E.; Vernon, S.M.;

Minority carrier lifetime of GaAs on silicon

1988 / IEEE
By: Al-Jassim, M.M.; Ahrenkiel, R.K.; Haven, V.E.; Tobin, S.P.; Vernon, S.M.; Jones, K.M.; Dunlavy, D.J.;

Analysis for high-efficiency GaAs solar cells on Si substrates

1988 / IEEE
By: Hane, K.; Itoh, Y.; Amano, C.; Yamaguchi, M.; Al-Jassim, M.M.; Ahrenkiel, R.K.;

Quantum yield spectra and I-V properties of a GaAs solar cell grown on a Ge substrate

1988 / IEEE
By: Virshup, G.F.; Partain, L.D.; Kaminar, N.R.;

A 21.8% GaInP/sub 2//GaAs tandem solar cell

1988 / IEEE
By: Kibbler, A.E.; Kurtz, S.R.; Olsen, J.M.;

Electron radiation and annealing of MOCVD GaAs and GaAs/Ge solar cells

1988 / IEEE
By: Meier, D.L.; Chung, M.A.; Bartko, J.; Szedon, J.R.;

Recrystallized silicon thin film structure for solar cells

1988 / IEEE
By: Eyer, A.; Reis, I.; Rauber, A.;

Wide bandgap thin film solar cells from CdTe alloys

1988 / IEEE
By: Sudharsanan, R.; Rohatgi, A.; Liu, C.H.; Meyers, P.V.; Ringel, S.A.;

Structural and electrical properties of furnace and rapid thermally annealed LPCVD WSi/sub 2/ films on single-crystal, polycrystalline, and amorphous silicon substrates

1992 / IEEE
By: Shenai, K.;

Direct comparisons of quantized Hall resistances

1990 / IEEE
By: Andre, J.P.; Etienne, B.; Piquemal, F.;

Scaling and dielectric stress compensation of ultrasensitive boron-doped silicon microstructure

1990 / IEEE
By: Wise, K.D.; Najafi, K.; Cho, S.T.;

Mechanical integrity of polysilicon films exposed to hydrofluoric acid solutions

1990 / IEEE
By: Walker, J.A.; Mehregany, M.; Gabriel, K.J.;

Spiral microstructures for the measurement of average strain gradients in thin films

1990 / IEEE
By: Muller, R.S.; Fan, L.-S.; Huang, J.; Howe, R.T.; Yun, W.;

Optimization of LPCVD silicon nitride deposition process by use of designed experiments

1990 / IEEE
By: DePinto, G.; Wilson, J.;

Emitter structures in MOCVD InP solar cells

1990 / IEEE
By: Haven, V.E.; Keavney, C.J.; Vernon, S.M.;

Design of high efficiency solar cells by photoluminescence studies

1990 / IEEE
By: Vernon, S.M.; Keyes, B.M.; Dunlavy, D.J.; Ahrenkiel, R.K.; Dixon, T.M.; Tobin, S.P.;

Reverse I-V characteristics of GaAs cells

1990 / IEEE
By: Chu, C.; Yoo, H.I.; Iles, P.A.; Chang, K.-I.; Krogen, J.;

Effects of pre-heat treatment of CdS on MOCVD CdTe/CdS solar cell performance

1990 / IEEE
By: Rohatgi, A.; Sudharsanan, R.;

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