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Topic: Crystal Defects

Results

Laser-based structure studies of silicon and gallium arsenide
1986 / IEEE
By: Streetman, B.G.; Crook, G.E.;
Polarization Study of Defect Structure of CdTe Radiation Detectors
2011 / IEEE
By: Franc, J.; Belas, E.; Grill, R.; Hoschl, P.; Moravec, P.; Uxa, S.; Bugar, M.;
pH Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Al-Doped ZnO Nanostructures Hydrothermally Synthesized at Low Temperatures
2011 / IEEE
By: Po-Yu Yang; Huang-Chung Cheng; Hung-Hsien Li; Cheng-Wei Chen; Jung-Chuan Chou; Po-Chun Chiu; Jyh-Liang Wang;
Output Coupling and Spectral Control in 1550-nm Micro-Disc Lasers Using Defects on the Rim
2011 / IEEE
By: Yi Shu; Zhuoran Wang; Sorel, M.; Mezosi, G.; Xinlun Cai; Siyuan Yu; Pisu Jiang;
Viewing Angle and Voltage Dependence of the Visibility of Cell Gap Defects in LCD Panels
2011 / IEEE
By: Mafi, A.; Mlejnek, M.;
Magnetic After-Effect Analysis of Dislocation Relaxations in Thermally Aged and Neutron Irradiated Fe-Cu Alloys
2012 / IEEE
By: Konstantinovic, M.J.; Van de Wiele, B.; Minov, B.; Dupre, L.;
Novel Dispersion-Adapted Photonic Crystal Cavity With Improved Disorder Stability
2012 / IEEE
By: Welna, K.; Krauss, T.F.; O'Faolain, L.; Galli, M.; Portalupi, S.L.;
Influence of Edge Defects, Vacancies, and Potential Fluctuations on Transport Properties of Extremely Scaled Graphene Nanoribbons
2012 / IEEE
By: Minsheng Wang; Song, E.B.; Poljak, M.; Wang, K.L.; Suligoj, T.;
Design-Aware Mask Inspection
2012 / IEEE
By: Gupta, P.; Kagalwalla, A.A.; McDonald, S.; Progler, C.J.;
Crystal Defects in CdZnTe Crystals Grown by the Modified Low-Pressure Bridgman Method
2012 / IEEE
By: Marchini, L.; James, R.B.; Camarda, G.S.; Bolotnikov, A.E.; Zambelli, N.; Zha, M.; Zappettini, A.;
Phenomenological Model for Predicting theEnergy Resolution of Neutron-Damaged Coaxial HPGe Detectors
2012 / IEEE
By: Wharton, C.J.; Seabury, E.H.; Van Siclen, C.D.; Caffrey, A.J.;
Influence of crystal quality on the excitation and propagation of surface and bulk acoustic waves in polycrystalline AlN films
2012 / IEEE
By: Iborra, E.; Sangrador, J.; Capilla, J.; Olivares, J.; Clement, M.;
Atomistic Simulations of Tribological Properties of Ultra-Thin Carbon Nanotube Films on Silicon
2010 / IEEE / 978-1-61284-986-7
By: Welch, C.R.; Lee, N.J.;
Annealing effect on hydrothermally grown ZnO thin-film transistors
2011 / IEEE / 978-1-4577-0378-2
By: Chuan-Chou Hwang; Tsang-Yen Hsieh; Jyh-Liang Wang; Po-Yu Yang; Der-Chi Shye;
Back-side De-processing using CMP for bulk silicon 40-nm graphics processors
2011 / IEEE / 978-1-4577-0158-0
By: Chin, J.M.; Narang, V.; Lim, S.H.; Chong, H.B.; Teo, C.W.; Wei, M.S.; Ong, M.C.;
Leakage issues in failure analysis of p+ SiGe active area short monitor
2011 / IEEE / 978-1-4577-0158-0
By: Murphy, R.J.; Seung Chul Lee; Molella, C.M.; Nxumalo, J.; Ronsheim, P.; Johnson, G.M.; Arya, A.; Lee, J.; Chow, Y.T.C.; Shenzhi Yang; Chung Woh Lai; Onoda, H.; Bum Ki Moon; Daleo, C.;
Equilibrium between spontaneous polarization, piezoelectric polarization and crystal defects for blue LEDs on sapphire substrate
2011 / IEEE / 978-1-4244-9439-2
By: Yufu Wang;
The mechanical properties of nickel-chromium alloy welded by nd:YAG laser apparatus in dentistry
2011 / IEEE / 978-1-61284-726-9
By: Zhenan Ren; Bing Wang; Suqian Zhao; Hong Liu;
Microstructures and optical absorption of Ti-doped ZnO films
2011 / IEEE / 978-1-4577-0321-8
By: Ligang Ma; Yingfeng Li; Shuyi Ma; Haixia Chen; Xingli Huang;
Subbandgap photoluminescence of Si photonic crystal nanocavity at room temperature
2011 / IEEE / 978-1-4244-8340-2
By: Portalupi, S.L.; Lo Savio, R.; Priolo, F.; Galli, M.; O'Faolain, L.; Shakoor, A.; Welna, K.; Franzo, G.; Irrera, A.; Krauss, T.F.; Andreani, L.C.; Guizzetti, G.; Gerace, D.;
Defect management with reticle-to-wafer correlations
2011 / IEEE / 978-1-4577-1647-8
By: Poh-Boon Yong; Tseng, D.; Yeu-Dong Gau; Wen-Hao Hsu;
Rapid photothermal processing for functionalization of nanostructured thin films
2011 / IEEE / 978-1-61284-172-4
By: Tiginyanu, I.; Lupan, O.; Ghimpu, L.; Ursaki, V.V.; Shishiyanu, S.; Shishiyanu, T.;
Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield
2011 / IEEE / 978-1-4577-0144-3
By: Ning Han; Ho, J.C.; TakFu Hung; Fei Xiu; Guangcun Shan; Hou, J.J.; Hui, A.T.; Fengyun Wang;
On flat-top response of a photonic crystal based optical filter designed for CWDM system
2011 / IEEE / 978-1-4577-1109-1
By: Dasgupta, S.; Bose, C.;
Embedded Test for Highly Accurate Defect Localization
2011 / IEEE / 978-1-4577-1984-4
By: Wunderlich, H.-J.; Holst, S.; Imhof, M.E.; Mumtaz, A.;
Quick repairing of defects inside telescoping multi-walled carbon nanotubes using contact resistance
2011 / IEEE / 978-1-4577-1516-7
By: Fukuda, T.; Saito, Y.; Yang, Z.; Ode, Y.; Nakajima, M.;
Characterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique
2011 / IEEE / 978-1-4244-9965-6
By: Koo, C.K.; Steen, S.; Meng, L.; Phang, J.C.H.; Bhatia, C.S.; Kim, Y.H.; Joshi, P.; Street, A.G.;
Nanojunction solar cells based on polycrystalline CdTe films grown on ZnO nanocones
2011 / IEEE / 978-1-4244-9965-6
By: Zhang, X.-G.; Jun Xu; Sang Hyun Lee; Smith, B.; Parish, C.M.;
Raman spectroscopy study of growth of multiwalled carbon nano-tubes using Plasma Enhanced Chemical vapour depositon
2011 / IEEE / 978-1-4673-0074-2
By: Ram, S.K.; Singh, V.; Sarkar, S.; Biswas, P.; Bhal Singh, C.;
Nitrogen-related defects and their effect on the electrical properties of GaAsN grown by chemical beam epitaxy
2011 / IEEE / 978-1-4244-9965-6
By: Yamaguchi, M.; Ohshita, Y.; Kojima, N.; Suzuki, H.; Bouzazi, B.;
Effect of compositional gradients on structural defects in Cu(In, Ga)Se2 thin films for solar cells
2011 / IEEE / 978-1-4244-9965-6
By: Dietrich, J.; Boit, C.; Schock, H.; Unold, T.; Rissom, T.; Abou-Ras, D.;
Synthesis and characterization of silver nanoparticles by chemical reduction method
2011 / IEEE / 978-1-4673-0074-2
By: Aparna, Y.; Rao, J.V.R.; Rao, K.V.; Khatoon, U.T.;
Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-amorphised silicon
2012 / IEEE / 978-1-4673-1257-8
By: Cristiano, F.; Boninelli, S.; Hackenberg, M.; Bazizi, M.; Quillec, M.; Fazzini, P.F.; Mangelinck, D.; Blavette, D.; Cojocaru, O.; Tavernier, C.; Boulenc, P.; Duchaine, J.; Torregrosa, F.; Spiegel, Y.; Qiu, Y.; Essa, Z.;
Performance of a Large Volume 20 $\times$20$\times$ 15 mm$^{3}$ CPG Detector
2011 / IEEE
By: Yang, G.; Smith, M.K.; Mayo, D.R.; Kim, K.H.; Hossain, A.; Gul, R.; James, R.B.; Egarievwe, S.U.; Cui, Y.; Camarda, G.S.; Babalola, S.; Bolotnikov, A.E.;
Design Considerations and Testing of Virtual Frisch-Grid CdZnTe Detector Arrays Using the H3D ASIC
2013 / IEEE
By: Bolotnikov, A. E.; Butcher, J.; James, R. B.; Yang, G.; Vernon, E.; Petryk, M.; McCall, B.; Marshall, M.; Mahler, G.; Kopach, O. V.; Kim, K. H.; Hossain, A.; Fochuk, P. M.; Fried, J.; De Geronimo, G.; Camarda, G. S.; Cui, Y.;
Effects of crystal defects on the electrokinetics of nanofluidic crystal
2013 / IEEE
By: Zhang, Haixia; Wang, Wei; Ouyang, Wei; Li, Zhihong; Wu, Wengang;
Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors
2012 / American Institute of Physics
By: Hong Jiang; Dabing Li; Xiaojuan Sun; Hang Song; Kun You; Zhiming Li; Guoqing Miao; Hongbo Liu; Yiren Chen;
Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO2 matrix
2012 / American Institute of Physics
By: S. Gutsch; A. M. Hartel; D. Hiller; N. Zakharov; P. Werner; M. Zacharias;
Laser-assisted sol-gel growth and characteristics of ZnO thin films
2012 / American Institute of Physics
By: Min Su Kim; Soaram Kim; Jae-Young Leem;
Nondestructive two-dimensional phase imaging of embedded defects via on-chip spintronic sensor
2012 / American Institute of Physics
By: Z. X. Cao; M. Harder; L. Fu; B. Zhang; W. Lu; G. E. Bridges; Y. S. Gui; C.-M. Hu;
Analysis of a wafer bonded GeSi heterojunction by transmission electron microscopy
2007 / American Institute of Physics
By: Hiroshi Kanbe; Masayuki Miyaji; Mami Hirose; Noriko Nitta; Masafumi Taniwaki;
Estimation of Mn4+ ion content ratio in self-doped compound La1xMnO3´
2007 / American Institute of Physics
By: G. D. Tang; D. L. Hou; W. Chen; P. Hao; G. H. Liu; S. P. Liu; X. L. Zhang; L. Q. Xu;
Study of one-dimensional Bragg structures with localized defect
2007 / American Institute of Physics
By: I. V. Konoplev; P. MacInnes; A. W. Cross; A. D. Phelps; K. Ronald;
Transmission of pillar-based photonic crystal waveguides in InP technology
2007 / American Institute of Physics
By: Abigaël Kok; Erik Jan Geluk; Boudewijn Docter; Jos van der Tol; Richard Nötzel; Meint Smit; Roel Baets;
Lasing characteristics of a GaN photonic crystal nanocavity light source
2007 / American Institute of Physics
By: Chun-Feng Lai; Peichen Yu; Te-Chung Wang; Hao-Chung Kuo; Tien-Chang Lu; Shing-Chung Wang; Chao-Kuei Lee;
Observation of 394nm electroluminescence from low-temperature sputtered n-ZnOSiO2 thin films on top of the p-GaN heterostructure
2007 / American Institute of Physics
By: Cheng Pin Chen; Min Yung Ke; Chien Cheng Liu; Yuan Jen Chang; Fu Hsiang Yang; Jian Jang Huang;
Defect modes merging in one-dimensional photonic crystals with multiple single-negative material defects
2008 / American Institute of Physics
By: Yihang Chen;
Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks
2008 / American Institute of Physics
By: J. F. Zhang; C. Z. Zhao; M. H. Chang; M. B. Zahid; A. R. Peaker; S. Hall; G. Groeseneken; L. Pantisano; S. De Gendt; M. Heyns;
Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors
2008 / American Institute of Physics
By: J. T. Ryan; P. M. Lenahan; J. Robertson; G. Bersuker;
Defect structure of highly Zn-doped LiNbO3 single crystal revealed by extended x-ray absorption spectra
2008 / American Institute of Physics
By: P.-C. Tsai; M.-L. Sun; C.-T. Chia; H.-F. Lu; S.-H. Lin; M.-L. Hu; J.-F. Lee;
Synchrotron microbeam x-ray radiation damage in semiconductor layers
2008 / American Institute of Physics
By: Sean M. Polvino; Conal E. Murray; Özgür Kalenci; I. C. Noyan; Barry Lai; Zhoghou Cai;
Misfit dislocation blocking by dilute nitride intermediate layers
2008 / American Institute of Physics
By: J. Schöne; E. Spiecker; F. Dimroth; A. W. Bett; W. Jäger;
Primary and secondary threshold intensities of ultraviolet-laser-induced domain nucleation in nearly stoichiometric LiTaO3
2008 / American Institute of Physics
By: Aimin Yan; Jianfeng Sun; Yu Zhou; Zhu Luan; Dean Liu; Liren Liu; Yin Hang; Yanan Zhi;
Wave propagation and tunneling through periodic structures
2008 / American Institute of Physics
By: I. V. Konoplev; P. MacInnes; A. W. Cross; A. D. R. Phelps; L. Fisher; K. Ronald;
Evidence of dangling bond electrical activity at the Ge/oxide interface
2008 / American Institute of Physics
By: Silvia Baldovino; Alessandro Molle; Marco Fanciulli;
Effect of ruthenium oxide electrode on the resistive switching of Nb-doped strontium titanate
2008 / American Institute of Physics
By: Musarrat Hasan; Rui Dong; H. J. Choi; D. S. Lee; D.-J. Seong; M. B. Pyun; Hyunsang Hwang;
120¼W peak output power from edge-emitting photonic crystal double-heterostructure nanocavity lasers
2009 / American Institute of Physics
By: Ling Lu; Adam Mock; Tian Yang; Min Hsiung Shih; Eui Hyun Hwang; John OBrien; Andrew Stapleton; Stephen Farrell; P. Daniel Dapkus; Mahmood Bagheri;
Strong coupling through optical positioning of a quantum dot in a photonic crystal cavity
2009 / American Institute of Physics
By: Susanna M. Thon; Matthew T. Rakher; Hyochul Kim; Jan Gudat; William T. M. Irvine; Pierre M. Petroff; Dirk Bouwmeester;
Rapid three-dimensional imaging of defect distributions using a high-intensity positron microbeam
2009 / American Institute of Physics
By: N. Oshima; R. Suzuki; T. Ohdaira; A. Kinomura; T. Narumi; A. Uedono; M. Fujinami;
Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates
2009 / American Institute of Physics
By: Y. Yang; X. A. Cao; C. H. Yan;
Influence of surface structure on the phonon-assisted emission process in the ZnO nanowires grown on homoepitaxial films
2009 / American Institute of Physics
By: Woong-Ki Hong; Gunho Jo; Minhyeok Choe; Takhee Lee; Jung Inn Sohn; Mark E. Welland;
High-Q micromechanical resonators in a two-dimensional phononic crystal slab
2009 / American Institute of Physics
By: Saeed Mohammadi; Ali Asghar Eftekhar; William D. Hunt; Ali Adibi;
Influence of surface morphology on the optical property of vertically aligned ZnO nanorods
2009 / American Institute of Physics
By: Sachindra Nath Das; Jyoti Prakash Kar; Ji-Hyuk Choi; S. Byeon; Y. D. Jho; Jae-Min Myoung;
Influence of heat treatments on electrical properties of ZnO films grown by molecular-beam epitaxy
2009 / American Institute of Physics
By: D. C. Oh; S. H. Park; H. Goto; I. H. Im; M. N. Jung; J. H. Chang; T. Yao; J. S. Song; C. H. Bae; C. S. Han; K. W. Koo;
Wide bandwidth lasing randomly assembled ZnS/ZnO biaxial nanobelt heterostructures
2010 / American Institute of Physics
By: H. Y. Yang; S. F. Yu; J. Yan; L. D. Zhang;
Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface
2010 / American Institute of Physics
By: Silvia Baldovino; Alessandro Molle; Marco Fanciulli;
Observations of negative bias temperature instability defect generation via on the fly electron spin resonance
2010 / American Institute of Physics
By: J. T. Ryan; P. M. Lenahan; T. Grasser; H. Enichlmair;
Reversible optical nonreciprocity in periodic structures with liquid crystals
2010 / American Institute of Physics
By: Andrey E. Miroshnichenko; Etienne Brasselet; Yuri S. Kivshar;
Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions
2011 / American Institute of Physics
By: Wayne Y. Fung; Lin Chen; Wei Lu;
Influence of defects on the magnetism of Mn-doped ZnO
2007 / American Institute of Physics
By: D. Iu_an; B. Sanyal; O. Eriksson;
Extinction spectra and electrical field enhancement of Ag nanorods with different topologic shapes
2007 / American Institute of Physics
By: Z.-Y. Zhang; Y.-P. Zhao;
Properties of omnidirectional gap and defect mode of one-dimensional photonic crystal containing indefinite metamaterials with a hyperbolic dispersion
2007 / American Institute of Physics
By: Yuanjiang Xiang; Xiaoyu Dai; Shuangchun Wen; Dianyuan Fan;
Precipitates and hydrogen passivation at crystal defects in n- and p-type multicrystalline silicon
2007 / American Institute of Physics
By: L. J. Geerligs; Y. Komatsu; I. Röver; K. Wambach; I. Yamaga; T. Saitoh;
Raman spectroscopy study of damage and strain in (001) and (011) Si induced by hydrogen or helium implantation
2007 / American Institute of Physics
By: C. Villeneuve; K. K. Bourdelle; V. Paillard; X. Hebras; M. Kennard;
Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study
2008 / American Institute of Physics
By: X. J. Wang; I. A. Buyanova; W. M. Chen; C. J. Pan; C. W. Tu;
Optimization of a single defect photonic crystal laser cavity
2008 / American Institute of Physics
By: Walter R. Frei; H. T. Johnson; Kent D. Choquette;
The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)Si(111) support systems
2008 / American Institute of Physics
By: A. Giussani; O. Seifarth; P. Rodenbach; H.-J. Müssig; P. Zaumseil; T. Weisemöller; C. Deiter; J. Wollschläger; P. Storck; T. Schroeder;
Anisotropy of weak light scattering in thin opal films
2008 / American Institute of Physics
By: Sergei G. Romanov;
A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors
2008 / American Institute of Physics
By: C. P. Lee; F. Chau; B. Lin; M. Kretschmar; W. Ma;
Laser annealing characteristics of multiple bulk defect populations within DKDP crystals
2008 / American Institute of Physics
By: Paul DeMange; Christopher W. Carr; Raluca A. Negres; Harry B. Radousky; Stavros G. Demos;
Defect energy levels in Ta2O5 and nitrogen-doped Ta2O5
2008 / American Institute of Physics
By: Hyunho Shin; Sang Yeup Park; Shin-Tae Bae; Sangwook Lee; Kug Sun Hong; Hyun Suk Jung;
Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon
2008 / American Institute of Physics
By: M. Ghazisaeidi; J. B. Freund; H. T. Johnson;
Analysis of planar defect structures in three-dimensional layer-by-layer photonic crystals
2008 / American Institute of Physics
By: Ji-Feng Chen; Rong-Tai Hong; Jaw-Yen Yang;
Origin of trapping in multicrystalline silicon
2008 / American Institute of Physics
By: Paul Gundel; Martin C. Schubert; Wilhelm Warta;
Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer
2008 / American Institute of Physics
By: F. Olsson; M. Xie; S. Lourdudoss; I. Prieto; P. A. Postigo;
Internal stresses in TiN/Ti multilayer coatings deposited by large area filtered arc deposition
2008 / American Institute of Physics
By: Y. H. Cheng; T. Browne; B. Heckerman; J. C. Jiang; E. I. Meletis; C. Bowman; V. Gorokhovsky;
Resonant electron tunneling through defects in GaAs tunnel diodes
2008 / American Institute of Physics
By: K. Jandieri; S. D. Baranovskii; O. Rubel; W. Stolz; F. Gebhard; W. Guter; M. Hermle; A. W. Bett;
Observation of local dipole moment of Si atoms on Si(100) surfaces using noncontact scanning nonlinear dielectric microscopy
2009 / American Institute of Physics
By: Nobuhiro Kin; Yuhei Osa; Yasuo Cho;
Erratum: Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures [J. Appl. Phys. 106, 023719 (2009)]
2010 / American Institute of Physics
By: V. N. Do; P. Dollfus;
Growth, magnetic properties, and Raman scattering of La2NiMnO6 single crystals
2009 / American Institute of Physics
By: M. N. Iliev; M. M. Gospodinov; M. P. Singh; J. Meen; K. D. Truong; P. Fournier; S. Jandl;
Spatial correlation between optical properties and defect formation in GaN thin films laterally overgrown on cone-shaped patterned sapphire substrates
2010 / American Institute of Physics
By: Kyu-Seung Lee; Ho-Sang Kwack; Jun-Seok Hwang; Tae-Moo Roh; Yong-Hoon Cho; Jae-Hoon Lee; Yong-Chun Kim; Chang Soo Kim;
Degradation and breakdown characteristics of thin MgO dielectric layers
2010 / American Institute of Physics
By: Greg Hughes; Patrick Casey; Robert OConnor; Simon B. Newcomb;
Ultraviolet photorefraction at 325 nm in doped lithium niobate crystals
2010 / American Institute of Physics
By: Feifei Xin; Guoquan Zhang; Fang Bo; Haifeng Sun; Yongfa Kong; Jingjun Xu; Tatyana Volk; Natalia M. Rubinina;
Electron spin resonance study of proton-irradiation-induced defects in graphite
2010 / American Institute of Physics
By: Kyu Won Lee; H. Kweon; J. J. Kweon; Cheol Eui Lee;
Observation of electron trapping along scratches on SiO2 surface in mirror electron microscope images under ultraviolet light irradiation
2010 / American Institute of Physics
By: Masaki Hasegawa; Tomokazu Shimakura;
A systematic investigation into the conversion of ²-Ga2O3 to GaN nanowires using NH3 and H2: Effects on the photoluminescence properties
2010 / American Institute of Physics
By: Andreas Othonos; Matthew Zervos; Constantinos Christofides;
Theoretical modeling of refractive index in ion implanted LiNbO3 waveguides
2010 / American Institute of Physics
By: Jiao-Jian Yin; Fei Lu; Xian-Bing Ming; Yu-Jie Ma; Meng-bing Huang;
Origin of stress in radio frequency magnetron sputtered zinc oxide thin films
2011 / American Institute of Physics
By: Rashmi Menon; Vinay Gupta; H. H. Tan; K. Sreenivas; C. Jagadish;
Bonded hydrogen in nanocrystalline silicon photovoltaic materials: Impact on structure and defect density
2011 / American Institute of Physics
By: L. Xu; Z. P. Li; C. Wen; W. Z. Shen;
Bonded hydrogen in nanocrystalline silicon photovoltaic materials: Impact on structure and defect density
2011 / American Institute of Physics
By: L. Xu; Z. P. Li; C. Wen; W. Z. Shen;

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