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Topic: Channel Hot Electron Injection

Results

Enabling coexistence of multiple cognitive networks in TV white space

2011 / IEEE
By: Alemseged, Y.D.; Villardi, G.P.; Harada, H.; Baykas, T.; Tran Ha Nguyen; Chin-Sean Sum; Chen Sun;

Demonstration of Split-Gate Type Trigate Flash Memory With Highly Suppressed Over-Erase

2012 / IEEE
By: Masahara, M.; Ogura, A.; Sakamoto, K.; Hayashida, T.; Ishikawa, Y.; Yamauchi, H.; Kamei, T.; Tsukada, J.; O'uchi, S.; Endo, K.; Matsukawa, T.; Yongxun Liu;

On the seismic behavior of multi-story frame structure excited by near-fault ground motions

2011 / IEEE / 978-1-4244-9439-2
By: Wei Che; Qiang Liu;

Experimental study to push the Flash floating gate memories toward low energy applications

2011 / IEEE / 978-1-4577-1756-7
By: Marca, V.D.; Molas, G.; Lalande, F.; Postel-Pellerin, J.; Regnier, A.; Niel, S.; Simola, R.; Ogier, J.;

Automatic detection of mitosis cell in breast cancer histopathology images using genetic algorithm

2014 / IEEE
By: Nateghi, Ramin; Pour, Fattaneh Pourak; SadeghHelfroush, Mohammad; Danyali, Habibollah;

Control Plug Lateral Coupling Memory Cell Utilizing Uniform Channel Fowler–Nordheim Operation

2015 / IEEE
By: Kwon, E.; Choi, K.; Park, S.; Yoo, K.; Cho, I.;

Exploration of the effect of Category Match Score in search advertising

2014 / IEEE
By: Yan, Tak; Yuan, Jian; Cho, Junghoo; Cha, Youngchul;

High Performance of Fin-Shaped Tunnel Field-Effect Transistor SONOS Nonvolatile Memory With All Programming Mechanisms in Single Device

2014 / IEEE
By: Lin, H.; Wu, Y.; Jhan, Y.; Yeh, M.; Chen, Y.; Hung, M.;

Comparison on the anti-windup control methods of air-breathing hypersonic vehicle

2014 / IEEE
By: Tan, Zhiyong; Che, Jun; Hao, Chuangzhou; Di, Xiaoguang; Zhang, Silun;

Generation of optimal binarisation output from ancient Thai manuscripts on palm leaves

2013 / IEEE
By: Jareanpon, Chatklaw; Chamchong, Rapeeporn; Chun Che Fung;

Adaptive linear fusion for image enhancement with hardware verification

2013 / IEEE
By: Cheng-Hsiung Hsieh; Qiangfu Zhao; Ching-Hua Liu; Yu-Sheng Lin;

A 50-ns 256 K CMOS split-gate EPROM

1988 / IEEE
By: Ma, Y.Y.; Hu, C.-J.; Sinai, K.; Kazerounian, R.; Eitan, B.; Shubat, A.S.; Sani, B.; Ali, S.B.;

Synthesis of heterogeneous systolic arrays

1988 / IEEE / 0-8186-0830-7
By: Mongenet, C.; Perrin, G.-R.;

Reliability performance of ETOX based flash memories

1988 / IEEE
By: Verma, G.; Mielke, N.;

Gate current injection initiated by electron band-to-band tunneling in MOS devices

1989 / IEEE
By: Coleman, D.J.; Chen, I.-C.; Teng, C.W.;

A 5 volt high density poly-poly erase flash EPROM cell

1988 / IEEE
By: Ali, S.; Kazerounian, R.; Eitan, B.; Ma, Y.;

Channel length and width dependence of hot-carrier hardness in fluorinated MOSFETs

1989 / IEEE
By: Ma, T.-P.; Ohji, Y.; Ohyu, K.; Nishioka, Y.;

Correlation between channel hot-electron degradation and radiation-induced interface trapping in MOS devices

1989 / IEEE
By: Ormond, R.D.; Palkuti, L.J.; Chung, J.; Hu, C.;

VIPMOS-a novel buried injector structure for EPROM applications

1991 / IEEE
By: Wijburg, R.C.; Mouthaan, T.J.; Wallinga, H.; Middelhoek, J.; Hemink, G.J.;

Band-to-band tunneling induced substrate hot-electron (BBISHE) injection: a new programming mechanism for nonvolatile memory devices

1989 / IEEE / 0-7803-0817-4
By: Chen, I.C.; Paterson, J.; Kaya, C.;

A new flash-erase EEPROM cell with a sidewall select-gate on its source side

1989 / IEEE / 0-7803-0817-4
By: Yamada, S.; Naruke, K.; Wada, M.; Taguchi, S.; Obi, E.;

Comments on "A derivation of the normal equation in FIR Wiener filters" by Y.-D. Huang and C.-T. Chen

1991 / IEEE
By: Picinbono, B.;

Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

1991 / IEEE
By: Magee, C.W.; Prinz, E.J.; Sturm, J.C.;

Annealing effects of carbon in n-channel LDD MOSFETs

1991 / IEEE
By: Or, B.S.S.; Richling, W.; Haddad, H.; Forbes, L.;

A new erasing and row decoding scheme for low supply voltage operation 16-Mb/64-Mb flash memories

1992 / IEEE
By: Nakayama, T.; Miyawaki, Y.; Yoshihara, T.; Arima, H.; Kobayashi, S.; Terada, Y.; Ohi, M.; Ajika, N.;

Enhanced electron trapping near channel edges in NMOS transistors

1992 / IEEE
By: Ma, T.-P.; Balasinski, A.;

AC hot-carrier effects in scaled MOS devices

1991 / IEEE / 0-87942-680-2
By: Izawa, R.; Takeda, E.; Nagai, R.; Umeda, K.;

Modeling hot-electron gate current in Si MOSFET's using a coupled drift-diffusion and Monte Carlo method

1992 / IEEE
By: Chang, M.C.; Chen, C.N.; Tahui Wang; Chimoon Huang; Fu, J.;

Substrate injection induced program disturb-a new reliability consideration for flash-EPROM arrays

1992 / IEEE / 0-7803-0473-X
By: Kablanian, A.; Kazerounian, R.; Roy, A.; Eitan, B.;

Determination of trapped oxide charge in flash EPROMs and MOSFETs with thin oxides

1992 / IEEE
By: San, K.T.; Ma, T.-P.;

Buried source-side injection (BSSI) for flash EPROM programming

1992 / IEEE
By: Paterson, J.; Liu, D.K.Y.; Kaya, C.; Shah, P.;

AC hot-carrier effect under mechanical stress (MOSFET)

1992 / IEEE / 0-7803-0698-8
By: Takeda, E.; Hamada, A.;

Serial 9 Mb flash EEPROM for solid state disk applications

1992 / IEEE / 0-7803-0701-1
By: Eberhardt, E.P.; Radosevich, J.R.; Harari, E.; Mihnea, A.; Fong, Y.; Lee, W.; Gregor, R.W.; Mofidi, M.; Norman, R.D.; Samachisa, G.; Guterman, D.C.; Chien, W.Y.; Cernea, R.A.; Yuan, J.H.; Mehrotra, S.; Mulrooney, T.J.; Leung, C.W.; Kohler, R.A.; Stiles, K.R.;

Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

1991 / IEEE / 0-7803-0243-5
By: Akasaka, Y.; Tsukamoto, K.; Yamaguchi, T.; Inuishi, M.; Kusunoki, S.;

Optimization of a source-side-injection FAMOS cell for flash EPROM applications

1991 / IEEE / 0-7803-0243-5
By: Liu, D.K.Y.; Shah, P.; Paterson, J.; Wong, M.; Kaya, C.;

A reliable bi-polarity write/erase technology in flash EEPROMs

1990 / IEEE
By: Kirisawa, R.; Shirota, R.; Aritome, S.; Masuoka, F.; Sakui, K.; Nakayama, R.; Endoh, T.;

A novel memory cell using flash array contactless EPROM (FACE) technology

1990 / IEEE
By: Park, C.; Fazio, A.; Ong, T.C.; Woo, B.J.; Atwood, G.; Lai, S.; Tam, S.; Holler, M.;

Memory array architecture and decoding scheme for 3 V only sector erasable DINOR flash memory

1994 / IEEE
By: Nakayama, T.; Yoshihara, T.; Kunori, Y.; Nakai, H.; Kobayashi, S.; Miyawaki, Y.; Miyoshi, H.; Hatanaka, M.; Ajika, N.; Onoda, H.; Terada, Y.;

Comparison of the cumulative-hazard and Kaplan-Meier estimators of the survivor function

1994 / IEEE
By: Bohoris, G.A.;

New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics

1992 / IEEE / 0-7803-0817-4
By: Shirota, R.; Aritome, S.; Iizuka, H.; Endoh, T.; Masuoka, F.;

High speed sub-halfmicron flash memory technology with simple stacked gate structure cell

1994 / IEEE / 0-7803-1921-4
By: Tsunoda, H.; Tanimoto, M.; Kamiya, E.; Yamaguchi, Y.; Sakagami, E.; Mori, S.; Hisatomi, K.; Yoshikawa, K.; Hashimoto, K.; Hiura, Y.; Arai, N.; Egawa, H.;

Fuzzy calculus applied to real time scheduling

1994 / IEEE / 0-7803-1896-X
By: Ziqiang Chen; Terrier, F.;

Oxide thickness dependence of inverter delay and device reliability for 0.25 /spl mu/m CMOS technology

1993 / IEEE / 0-7803-1450-6
By: McKee, J.; Chatterjee, A.; Aur, S.; Iyer, S.; Rodder, M.; Chen, I.C.; Chapman, R.;

A 0.5 /spl mu/m CMOS technology for multifunctional applications with embedded FN-flash memory and linear R and C modules

1993 / IEEE / 0-7803-1450-6
By: Zettler, T.; Winnerl, J.; Tempel, G.; Heinrigs, W.; Heinrich, R.;

Degradation mechanism of flash EEPROM programming after program/erase cycles

1993 / IEEE / 0-7803-1450-6
By: Ohshima, Y.; Amemiya, K.; Yamane, T.; Hiura, Y.; Yamada, S.; Yoshikawa, K.;

Failure mechanisms of flash cell in program/erase cycling

1994 / IEEE / 0-7803-2111-1
By: Cantarelli, D.; Bez, R.; Cappelletti, P.; Fratin, L.;

Automatic generation algorithms, experiments and comparisons of self-checking PLA schemes using parity codes

1993 / IEEE / 0-8186-3410-3
By: Torki, K.; Nicolaidis, M.; Boudjit, M.;

Direct-current measurements of oxide and interface traps on oxidized silicon

1995 / IEEE
By: Nishida, T.; Carroll, M.S.; Han, K.M.; Chih-Tang Sah; Neugroschel, A.; Yi Lu; Kavalieros, J.T.;

A convergence scheme for over-erased flash EEPROM's using substrate-bias-enhanced hot electron injection

1995 / IEEE
By: Richart, R.; Banerjee, S.K.; Kencke, D.L.; Hu, C.-Y.; Bandyopadhyay, B.; Garg, S.; Ibok, E.; Moore, B.;

Temperature dependence of gate and substrate currents in the CHE crossover regime

1995 / IEEE
By: Ricco, B.; Bez, R.; Sangiorgi, E.; Selmi, L.; Esseni, D.;

Fabrication of novel multi-layers for X-ray mirrors by controlled growth with sequential surface chemical reactions

1995 / IEEE / 0-7803-2450-1
By: Obara, M.; Toyoda, K.; Kumagai, H.;

Hole-induced 1/f noise increase in MOS transistors

1996 / IEEE
By: Kato, M.; Aoki, M.;

A comprehensive methodology and model for the characterization of hot-carrier induced MOS device degradation

1995 / IEEE / 0-7803-2672-5
By: Icel, A.; Waisum Wong;

Multi-level flash/EPROM memories: new self-convergent programming methods for low-voltage applications

1995 / IEEE / 0-7803-2700-4
By: Min-Hwa Chi; Bergemont, A.;

Spontaneous formation of aligned InGaAs quantum dots on GaAs multi-atomic steps by metalorganic chemical vapor deposition growth

1995 / IEEE / 0-7803-2147-2
By: Arakawa, Y.; Oshinowo, J.; Nishioka, M.; Kitamura, M.;

Programming and erase with floating-body for high density low voltage flash EEPROM fabricated on SOI wafers

1995 / IEEE / 0-7803-2547-8
By: Min-Hwa Chi; Bergemont, A.;

Multi-level charge storage in source-side injection flash EEPROM

1996 / IEEE / 0-7803-3510-4
By: Montanari, D.; Maes, H.E.; Groeseneken, G.; Deferm, L.; Haspeslagh, L.; Vanhorebeek, G.; Wellekens, D.; Van Houdt, J.;

A 98 mm/sup 2/ die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell

1996 / IEEE
By: Ohkawa, M.; Ohya, S.; Takeshima, T.; Oyama, K.-i.; Kawata, M.; Nakagawa, K.; Tsukiji, M.; Sudo, N.; Sugawara, H.;

Channel engineering in n-MOSFETs: scaling trends for hot electron injection and device degradation

1996 / IEEE / 0-7803-3358-6
By: Kim, K.W.; Hulfachor, R.B.; Williams, S.C.; Littlejohn, M.A.;

Multilevel flash cells and their trade-offs

1996 / IEEE / 0-7803-3393-4
By: Crisenza, G.; Roy, A.; Kazerounian, R.; Eitan, B.; Modelli, A.; Cappelletti, P.;

A model for MOS failure prediction due to hot-carriers injection

1996 / IEEE / 0-7803-3091-9
By: Liou, J.J.; Icel, A.; Waisum Wong;

Characterization of bitline stress effects on flash cell after program/erase cycle

1997 / IEEE / 0-7803-3575-9
By: Shone, F.; Chang, A.; Wang, M.T.; Huang, C.I.; Chang, K.L.; Guo, J.C.; Liu, V.C.;

Accelerated gate-oxide breakdown in mixed-voltage I/O circuits

1997 / IEEE / 0-7803-3575-9
By: Longenbach, L.; Bialas, J.; Clark, W.; Serafin, R.; Howard, J.; Mittl, S.; Turner, D.; Furukawa, T.; Maloney, M.;

Voltage variant source side injection for multilevel charge storage in flash EEPROM

1997 / IEEE
By: Haspeslagh, L.; Vanhorebeek, G.; Wellekens, D.; Van Houdt, J.; Deferm, L.; Maes, H.E.; Montanari, D.; Groeseneken, G.;

Chemical Etching Of SiO/sub 2/ By CF/sub 4/ At Low Pressure- Does It Really Depend On The Plasma Chemistry?

1994 / IEEE / 0-7803-2006-9
By: Jenq, J.; Ding, J.; Hershkowitz, N.;

A new single-poly flash memory cell with low-voltage and low-power operations for embedded applications

1997 / IEEE / 0-7803-3911-8
By: Min-Hwa Chi; Bergemont, A.;

A high-speed parallel sensing scheme for multi-level non-volatile memories

1997 / IEEE / 0-8186-8099-7
By: Calligaro, C.; Torelli, G.; Manstretta, A.; Gastaldi, R.;

Investigations of the interaction between different barrier metals and copper surface during the chemical-mechanical polishing

1997 / IEEE
By: Stavreva, Z.; Zeidler, Z.; Drescher, K.; Plotner, M.;

Wavelet neural network for classification of transient signals

1997 / IEEE / 0-7803-4173-2
By: Tollig, C.J.A.; Hoffman, A.J.;

A longitudinal study of alternative approaches to engineering education: survey of assessment results

1997 / IEEE / 0-7803-4086-8
By: Felder, R.M.; Dietz, E.J.; Felder, G.N.;

Development and implementation of an integrated engineering curriculum for the sophomore year

1997 / IEEE / 0-7803-4086-8
By: McLauchlan, R.A.; Heenan, W.A.;

A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded n-MOSFETs

1998 / IEEE
By: Ling, C.H.; Ang, D.S.;

Secondary Electron flash-a high performance, low power flash technology for 0.35 /spl mu/m and below

1997 / IEEE / 0-7803-4100-7
By: Gregor, R.W.; Singh, R.; Pinto, M.R.; Mastrapasqua, M.; Bude, J.D.; Kelley, P.J.; Roy, P.K.; McPartland, R.J.; Ma, Y.; Leung, C.W.; Kohler, R.A.;

Novel self-convergent programming scheme for multi-level p-channel flash memory

1997 / IEEE / 0-7803-4100-7
By: Yen-Sen Wang; Ching-Song Yang; Shih-Jye Shen; Wang, A.C.; Rodjy, N.; Chang, S.-D.T.; Hsu, C.C.-H.;

Performance and reliability evaluations of p-channel flash memories with different programming schemes

1997 / IEEE / 0-7803-4100-7
By: Chung, S.S.; Chao, T.S.; Yih, C.M.; Kuo, S.N.;

A multi-dimensional model of the software engineering curriculum

1998 / IEEE / 0-8186-8326-0
By: Cowling, A.J.;

A novel step stack NOR cell for low voltage flash

1998 / IEEE / 0-7803-4770-6
By: Kojima, M.; Hori, A.; Ogura, S.; Kotani, H.; Kato, J.; Yamanaka, M.; Akamatsu, K.; Odanaka, S.;

GaAs Fets And Novel Heterloepitaxial Quaternary Lasers Grown On InP Substrates By Organometallic Chemical Vapor Deposition

1988 / IEEE
By: Chang-Hasnain, C.; Bhat, R.; Lo, Y.H.; Lee, T.P.; Zah, C.E.; Caneau, C.;

A new SONOS memory using source-side injection for programming

1998 / IEEE
By: Kuo-Tung Chang; Ko-Min Chang; Paulson, W.M.; Higman, J.M.; Swift, C.; Wei-Ming Chen;

Positive oxide charge from hot hole injection during channel-hot-electron stress

1998 / IEEE
By: Sah, C.-T.; Han, K.M.;

Hot Carrier Degradation Mechanism Under Pulsed Stress in Mosfets

1991 / IEEE
By: Takeda, E.; Umeda, K.; Nagai, R.;

A Poly-Buffered Face Technology for High Density Flash Memories

1991 / IEEE
By: Lai, S.; Ong, T.C.; Woo, B.J.;

Seismic buffer recognition using mutual information for selecting wavelet based features

1998 / IEEE / 0-7803-4756-0
By: Hoogenboezem, C.; Hoffman, A.J.; Tollig, C.J.A.; van der Merwe, N.T.;

Peak demand control in commercial buildings with target peak adjustment based on load forecasting

1998 / IEEE / 0-7803-4104-X
By: Hoffman, A.J.;

A better understanding of substrate enhanced gate current in VLSI MOSFET's and flash cells. I. Phenomenological aspects

1999 / IEEE
By: Selmi, L.; Esseni, D.;

A better understanding of substrate enhanced gate current in VLSI MOSFETs and flash cells. II. Physical analysis

1999 / IEEE
By: Esseni, D.; Selmi, L.;

Experimental signature and physical mechanisms of substrate enhanced gate current in MOS devices

1998 / IEEE / 0-7803-4774-9
By: Esseni, D.; Selmi, L.;

A novel 4.6F/sup 2/ NOR cell technology with lightly doped source (LDS) junction for high density flash memories

1998 / IEEE / 0-7803-4774-9
By: Kyeong-Tae Kim; Hun-Kyu Lee; Yong-Ju Choi; Jeong-Hyuk Choi; Jonghan Kim; Yun-Seung Shin;

Low voltage, low current, high speed program step split gate cell with ballistic direct injection for EEPROM/flash

1998 / IEEE / 0-7803-4774-9
By: Kato, J.; Hori, A.; Ogura, S.; Kotani, H.; Kojima, M.; Yamanaka, M.; Ogura, T.; Akamatsu, K.; Fujimoto, H.; Odanaka, S.;

Disease management via telehealth: technology tools for the year 2005

1998 / IEEE / 0-8186-8667-7
By: Schlachta, L.;

An overview of the AKAMAI telemedicine project: a Pacific perspective

1999 / IEEE / 0-7695-0001-3
By: Garshnek, V.; Nelson, R.; Floro, F.C.;

Performance of hybrid interference canceller with zero-delay channel estimation for CDMA

1998 / IEEE / 0-7803-4984-9
By: Cheah, K.L.; Sumei Sun; Rasmussen, L.K.; Lim, T.J.; Sugimoto, H.;

Prototyping a GA Pipeline for complete hardware evolution

1999 / IEEE / 0-7695-0256-3
By: Tufte, G.; Haddow, P.C.;

A new programming technique for flash memory devices

1999 / IEEE / 0-7803-5620-9
By: Ma, T.P.; Zhizheng Liu;

A new self-convergent programming and erase tightening by substrate-hot-electron injection for ETOX cells in triple-well

1999 / IEEE / 0-7803-5620-9
By: Chih-Wei Hung; Chih-Ming Chen; Min-Hwa Chi; Yu-Hsiung Wang;

New divided-source structure to eliminate instability of threshold voltage in p-channel flash memory using channel hot-hole-induced-hot-electron programming

1999 / IEEE / 0-7803-5620-9
By: Lin, F.R.-L.; Hsu, C.C.-H.;

Substrate enhanced gate current: device design and temperature impact and disturbs in programming flash memories with negative body bias

1999 / IEEE / 4-930813-93-X
By: Annunziata, R.; Tosi, M.; Ghilardi, T.;

Adsorbed endotoxin mediates differential effects on particle-induced stimulation of cytokine and chemokine release [orthopedic implants]

1999 / IEEE / 0-7803-5674-8
By: Hong, C.Y.; Cho, D.R.; Goldring, S.R.; Baran, G.R.;

The application of classification wavelet networks to the recognition of transient signals

1999 / IEEE / 0-7803-5546-6
By: Hoffman, A.J.; Tollig, C.J.A.;

Is AO/DI the answer to small-scale Internet users?

1999 / IEEE / 0-7803-5546-6
By: Van Der Walt, L.S.; Ackermann, D.W.; Stoop, D.J.C.;

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Topic: Channel Hot Electron Injection

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