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Topic: Applied Electric Fields

Results

The tunable bandgap of AB-stacking bilayer graphene under the applied electric fields for power devices

2011 / IEEE / 978-1-4577-0536-6
By: Wenbo Wang; Liu Yan; Bin Yu; Kuang Sheng; Qing Guo; Tao Wan;

Femtosecond excitonic optoelectronics

1989 / IEEE
By: Goossen, K.W.; Henry, J.E.; Knox, W.H.; Schmitt-Rink, S.; Tell, B.; Li, K.D.; Gossard, A.C.; Chemla, D.S.; Miller, D.A.B.; English, J.;

Modeling of modulation-doped multiple-quantum-well structures in applied electric fields using the transfer-matrix technique

1991 / IEEE
By: Sugg, A.R.; Leburton, J.-P.C.;

Effects of electric fields on electron transfer in photosynthetic reaction centers

1989 / IEEE
By: Boxer, S.G.;

Saturation properties of large-aperture photoconducting antennas

1992 / IEEE
By: Darrow, J.T.; Morse, J.D.; Auston, D.H.; Zhang, X.-C.;

A proposed electroabsorption modulator at 1.55 mu m in silicon/silicon-germanium asymmetric quantum-well structures

1993 / IEEE
By: Friedman, L.; Soref, R.A.;

The use of applied electric fields the photorefractive tungsten bronze ferroelectrics

1994 / IEEE / 0-7803-1847-1
By: Duree, G.C.; Bei, N.; Neurgaonkar, R.R.; Sharp, E.J.; Kapoor, R.; Salamo, G.J.;

Image analysis of CdZnTe detectors for digital radiography

1998 / IEEE / 0-7803-4797-8
By: Giakos, G.C.; Sheffer, D.B.; Pillai, B.; Vega-Lozada, V.; Odogba, J.; Guntupalli, R.; Chowdhury, S.; Suryanarayanan, S.; Vedantham, S.;

Energy levels in a finite parabolic quantum dot under applied electric fields

1999 / IEEE / 0-7803-5139-8
By: Niculescu, E.C.; Cristea, M.;

Characterization of vanadium and manganese co-doped photorefractive cadmium telluride crystals

1996 / IEEE / 1-55752-443-2
By: Schwartz, R.N.; Trivedi, S.; Davidson, F.; Chen-Chia Wang;

Electron transport across bulk (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barriers determined from the I-V characteristics of n-i-n diodes measured between 60 and 310 K

2000 / IEEE
By: Morrison, A.P.; Valster, A.; van der Poel, C.J.; Lambkin, J.D.;

Optimization of the temporal response of II-VI direct type semiconductor detectors for flat-panel pulsed X-ray imaging

2001 / IEEE
By: Giakos, G.C.; Guntupalli, R.; Evans, E.; Nataraj, K.; Patnekar, N.; Sumrain, S.; Mehta, K.; Russo, F.; Passerini, A.G.; Chowdhury, S.; Suryanarayanan, S.; Vedantham, S.; Shah, N.; Odogba, J.; Nemer, R.;

Numerical simulation method for liquid crystal aberration compensation device

2002 / IEEE / 0-7803-7379-0
By: Kobayashi, S.; Iwasaki, N.; Suzuki, Y.; Sasaki, H.;

Optical electric-power sensor by use of one bismuth germanate crystal

2003 / IEEE
By: Xiang Cui; Changsheng Li; Yoshino, T.;

Effect of stochastic dead space on noise in avalanche photodiodes

2004 / IEEE
By: Oh-Hyun Kwon; Teich, M.C.; Saleh, B.E.A.; Campbell, J.C.; Hayat, M.M.;

Characterization of 14 MeV Neutron Detectors made with Polycrystalline CVD Diamond Films

2005 / IEEE / 0-4244-0159-6
By: Tucciarone, A.; Milani, E.; Marinelli, M.; Lattanzi, D.; Angelone, M.; Pillon, M.; Verona-Rinati, G.;

Enhanced spin lifetime in semiconductors with applied electric fields

2007 / IEEE / 978-1-4244-0930-3
By: Bierman, J.C.; Mulhollan, G.A.; Prepost, R.; Prescott, C.Y.; Maruyama, T.; Ioakeimidi, K.; Kirby, R.E.; Garwin, E.L.; Clendenin, J.E.; Brachmann, A.;

Structural change of ion-induced carbon nanofibers by electron current flow

2010 / IEEE / 978-1-4244-6644-3
By: Yusop, M.Z.; Tanemura, M.; Hayashi, Y.; Hayashi, A.; Sasase, M.; Ghosh, P.;

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