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Topic: 2d Simulation

Results

Sub-10-nm Tunnel Field-Effect Transistor With Graded Si/Ge Heterojunction

2011 / IEEE
By: Chun-Hsing Shih; Nguyen Dang Chien;

Bilinear Transform Implementation of the SC-PML for General Media and General FDTD Schemes

2012 / IEEE
By: Xikui Ma; Xu Zhuansun;

Simulations of a plasma-filled pinched electron beam diode

1992 / IEEE / 000-0-0000-0000-0
By: Weber, B.V.; Stephanakis, S.J.; Ottinger, P.F.; Grossmann, J.M.; Swanekamp, S.B.; Cooperstein, G.; Kellogg, J.C.;

Three-dimensional, time-dependent simulation of Inductive Output Tubes

2011 / IEEE / 978-1-61284-329-2
By: Jamroz, B.; Sessions, W.; Verboncoeur, J.; Freund, H.P.; Bui, T.; Ives, L.; Jhurani, C.;

A comparison study on the reduction of search space using frame node technique for simulation and computer games

2011 / IEEE / 978-1-4577-0308-9
By: Pongphankae, S.; Chun-Che Fung;

Simulations of SF6 plasma etching in the GEC Reference Cell

2011 / IEEE / 978-1-4577-0430-7
By: Brown, D.; Munro, J.J.; Lopez-Lopez, S.; Tennyson, J.;

A new perspective on the impact of diffraction in proximity of micro-metals for indoor geolocation

2011 / IEEE / 978-1-4577-1348-4
By: Ghaboosi, K.; Yunxing Ye; Askarzadeh, F.; Pahlavan, K.; Makarov, S.;

Design of MOEM vibration sensor using optical microring resonator and microcantilever beam

2011 / IEEE / 978-1-4577-0255-6
By: Rekha, R.; Srinivas, T.; Malathi, S.; Jayanthi, C.; Rashmi, C.; Shushma, M.R.; Sudarshan, S.M.;

On 2D simulation of particles motion in axially symmetric field

2012 / IEEE / 978-1-4673-0189-3
By: Galdetskiy, Anatoly V.;

Two-dimensional simulation of laser diodes in the steady state

1988 / IEEE
By: Kahen, K.B.;

The effect of trench-gate-oxide structure on EPROM device operation

1988 / IEEE
By: Steckl, A.J.; Chu, S.S.D.;

Network representations of LIGBT structures for CAD of power integrated circuits

1988 / IEEE
By: McDonald, R.J.; Fossum, J.G.; Shibib, M.A.;

Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structures

1988 / IEEE
By: Salmer, G.; Lefebvre, M.; Heliodore, F.; El-Sayed, O.L.;

TDMOS-an ultra-low on-resistance power transistor

1988 / IEEE
By: Tsou, L.; Kim, M.; Mukherjee, S.; Simpson, M.;

Improved physical modeling of submicron MOSFETs based on parameter extraction using 2-D simulation

1989 / IEEE
By: Hwang, C.G.; Dutton, R.W.;

An ON-resistance closed form for VDMOS devices

1989 / IEEE
By: Serra-Mestres, F.; Millan, J.; Rebollo, J.; Berta, F.; Paredes, J.; Hidalgo, S.; Fernandez, J.;

Quasi-two-dimensional MESFET simulations for CAD

1989 / IEEE
By: Pantoja, R.R.; Snowden, C.M.;

2-D simulation of degenerate hot electron transport in MODFETs including DX center trapping

1990 / IEEE
By: Salmer, G.; Shawki, T.; El-Sayed, O.;

Two-dimensional simulation of stress induced orientation effect in self-aligned GaAs MESFETs

1989 / IEEE
By: Lee, C.-P.; Lo, S.-H.;

Small-signal gain and numerical simulation of transvertron high power microwave sources

1989 / IEEE
By: Sullivan, D.J.; Godfrey, B.B.; Arman, M.J.; Walsh, J.E.;

Asymmetrical halo source GOLD drain (HS-GOLD) deep sub-half micron n-MOSFET design for reliability and performance

1989 / IEEE / 0-7803-0817-4
By: Buti, T.N.; Codella, C.F.; Tobimatsu, K.; Rovedo, N.; Ogura, S.;

Two-dimensional numerical device simulation for SOI MOSFETs

1988 / IEEE
By: Ishizuka, T.; Iriye, Y.;

Effects of shielded-gate structure on on-resistance of the SIT with a high-purity channel region

1992 / IEEE
By: Motoyama, S.-I.; Tanaka, A.; Kimura, M.; Kim, C.-W.; Yano, K.; Sukegawa, T.;

Snubberless superfast high power module using MOS driven field controlled thyristors

1990 / IEEE
By: Gruning, H.; Lilja, K.; de lambilly, H.;

Modeling submicrometer GaAs MESFETs using PISCES with an apparent gate-length-dependent velocity-field relation

1992 / IEEE
By: Hayes, R.E.; Fardi, H.Z.;

The perforated emitter contact effect

1992 / IEEE
By: Roulston, D.J.; Hamel, J.S.; Selvakumar, C.R.;

A general model of the thin-film SOI-MOSFET

1990 / IEEE / 0-87942-573-3
By: Abel, H.B.;

Numerical analysis of switching in the IGBT triggered thyristor

1991 / IEEE / 0-7803-0009-2
By: Tagami, S.; Iwamuro, N.; Ueno, K.; Sumida, H.;

A numerical study of performance potential of Si/sub 1-x/Ge/sub x/ pseudomorphic heterojunction bipolar transistors

1992 / IEEE
By: Navon, D.H.; Lee, S.-C.; Tang, T.-W.; Pejcinovic, B.;

A two-dimensional model for predicting substrate current in submicrometer MOSFETs

1992 / IEEE
By: Bordelon, T.J.; Agostinelli, V.M., Jr.; Maziar, C.M.; Tasch, A.F.; Yeap, C.F.; Wang, X.L.;

Distributed modeling of switching transients in GaAs MESFET's

1992 / IEEE
By: Tiwari, S.; Akhtar, S.;

Partial grooving in vertical Bloch line memory

1992 / IEEE
By: Katti, R.R.; Wu, J.C.; Stadler, H.L.;

Conjugate direction waveform methods for transient two-dimensional simulation of MOS devices

1991 / IEEE / 0-8186-2157-5
By: Lumsdaine, A.; White, J.; Reichelt, M.;

Numerical simulation of sidegating effect in GaAs MESFET's

1993 / IEEE
By: Lee, C.-P.; Chang, S.-J.;

A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's

1993 / IEEE
By: Lippens, P.-E.; Marchetaux, J.-C.; Vuillaume, D.; Boudou, A.; Bravaix, A.;

Odd harmonic generation of ultra-intense laser pulses reflected from an overdense plasma

1993 / IEEE
By: Mori, W.B.; Kruer, W.L.; Wilks, S.C.;

Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs

1993 / IEEE
By: Acovic, A.; Cardone, F.; Grutzmacher, D.; Davari, B.; Sadana, D.K.;

Gas flow patterns and thermal uniformity in rapid thermal processing equipment

1990 / IEEE
By: Liu, B.; Leighton, J.D.; Ahn, K.H.; Knutson, K.L.; Campbell, S.A.;

A new grid-generation method for 2-D simulation of devices with nonplanar semiconductor surface

1993 / IEEE
By: Wu, C.-Y.; Chin, S.-P.;

3-D interconnect capacitance calculation for multi-conductor and its application to a ROM circuit design

1992 / IEEE / 0-7803-0768-2
By: Huang, G.-D.; Chung, S.S.;

Quantum distributed model of the resonant tunneling transistor

1994 / IEEE
By: Taniyama, H.; Yoshii, A.; Tomizawa, M.;

Physical background of substrate current characteristics and hot-carrier immunity in short-channel ultrathin-film MOSFET's/SIMOX

1994 / IEEE
By: Omura, Y.; Izumi, K.;

Millimetre-wave device modelling differences in microstrip and coplanar waveguide

1993 / IEEE / 0-7803-1209-0
By: Richardson, J.R.; Pollard, R.D.; Walters, P.C.; Gatti, G.;

Examination of the SEU sensitivity of GaAs MESFETs via 2-D computer simulation and picosecond charge collection experiments

1993 / IEEE / 0-7803-0782-8
By: Campbell, A.B.; Curtice, W.R.; McMorrow, D.; Weatherford, T.R.; Knudson, A.R.;

Two-dimensional simulation for resonant tunneling transistor

1994 / IEEE
By: Tomizawa, M.; Yoshii, A.; Taniyama, H.;

A parallel-in-time method for the transient simulation of SOI devices with drain current overshoots

1994 / IEEE
By: Mayergoyz, I.D.; Korman, C.E.; Tai, G.-C.;

Use of 2D simulations to study parameters influence on SEB occurrence in n-channel MOSFETs

1993 / IEEE / 0-7803-1793-9
By: Palau, J.-M.; Dachs, C.; Roubaud, F.; Tastet, P.; Gasiot, J.;

The effects of strain on dopant diffusion in silicon

1993 / IEEE / 0-7803-1450-6
By: Slinkman, J.A.; Jones, K.S.; Heemyong Park; Law, M.E.;

Ultrasonic wave propagation through aberrating layers: experimental verification of the conjugate gradient Rayleigh method

1996 / IEEE
By: Thijssen, J.M.; Berkhoff, A.P.; Ledoux, L.A.F.;

Characterization of polysilicon-gate depletion in MOS structures

1996 / IEEE
By: Ricco, B.; Esseni, D.; Versari, R.;

2D analysis of rotational loss tester

1995 / IEEE
By: Kedous-Lebouc, A.; Nencib, N.; Cornut, B.;

Signal isolation in BiCMOS mixed mode integrated circuits

1995 / IEEE / 0-7803-2778-0
By: Joardar, K.;

2D simulation of diffraction and reflection improves Z-path SAW filters for mobile communications

1995 / IEEE / 0-7803-2940-6
By: Machui, J.; Manner, O.; Ruile, W.; Ali-Hackl, M.;

Two-dimensional simulation of kink-related backgating effect in GaAs MESFETs

1995 / IEEE / 0-7803-2624-5
By: Horio, K.; Usami, K.;

Design study of passivation ledge in AlGaAs/GaAs heterojunction bipolar transistors

1995 / IEEE / 0-7803-2624-5
By: Yang-Hua Chang;

Latch-up characteristics of a trench-gate conductivity modulated power transistor

1995 / IEEE / 0-7803-2624-5
By: Lai, P.P.T.; Wai Tung Ng; Sin, J.K.O.; Cai Jun;

Instabilities in modern bipolar transistors during the turn-off under inductive loads

1995 / IEEE / 0-7803-2786-1
By: Vitale, G.F.; Busatto, G.; Fratelli, L.;

Impact ionization influence on the photocurrent of an irradiated junction

1995 / IEEE / 0-7803-3093-5
By: Pelanchon, F.; Sudre, C.; Gasiot, J.; Palau, J.-M.; Moreau, Y.;

Characterization and simulation of hot carrier effect on erasing gate current in flash EEPROMs

1995 / IEEE / 0-7803-2031-X
By: Chen, T.; Tahui Wang; Chimoon Huang; Shone, F.C.; Chang, A.; Peng, N.C.;

A study on the partial discharge characteristics according to the distribution pattern of voids within an insulation

1995 / IEEE / 0-7803-2040-9
By: Seung-Ik Jeon; Min-Koo Han; Key-Man Han; Do-Hong Yun; Doe-Sung Shin;

Two dimensional investigation of ion acoustic waves reflection from the sheath

1995 / IEEE / 0-7803-2669-5
By: Birdsall, C.K.; Cartwright, K.L.;

2D simulation of acceleration and compression of plasma foils inside cylindrical and conical microducts

1995 / IEEE / 0-7803-2969-4
By: Chacon, L.; Velarde, P.; Martinez-Val, J.M.;

InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices

1996 / IEEE
By: Daumann, W.; Ellrodt, P.; Brockerhoff, W.; Bertenburg, R.; Reuter, R.; Auer, U.; Molls, W.; Tegude, F.-J.;

Physical polysilicon thin-film transistor modelling for device characterisation and circuit design

1995 / IEEE / 0-7803-3056-0
By: Quinn, M.; Migliorato, P.;

Circuit models for the hybrid element method

1996 / IEEE / 0-7803-3073-0
By: Dewilde, P.M.; Nowacka, E.B.;

Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs

1996 / IEEE / 0-7803-3504-X
By: Yamada, T.; Horio, K.;

Effects of semi-insulating substrate on kink phenomena in GaAs MESFETs

1996 / IEEE / 0-7803-3179-6
By: Satoh, K.; Horio, K.;

A Laplace expansion solution technique for 2D simulation of PPM fields

1997 / IEEE / 0-7803-3990-8
By: Jackson, R.H.;

Performance evaluation of bulk Si and SOI RF LDMOSFETs for emerging RFIC applications

1997 / IEEE / 0-7803-3938-X
By: Leong, S.K.; Shenai, K.; Trivedi, M.; Perupalli, P.;

Modeling and characterization of 80 V LDMOSFET for RF communications

1997 / IEEE / 0-7803-3916-9
By: Leong, S.K.; Shenai, K.; Trivedi, M.; Perugupalli, P.;

Two dimensional simulation of transient enhanced boron out-diffusion from the base of a SiGe HBT due to an extrinsic base implant

1997 / IEEE / 0-7803-3916-9
By: Ashburn, P.; Lever, R.F.; Hashim, M.D.R.;

Experiments and modeling of boron segregation in As implanted Si during annealing

1997 / IEEE / 0-7803-4100-7
By: Choi, P.S.; Chang, R.D.; Kwong, D.L.; Wristers, D.;

Charge collection in submicron CMOS/SOI technology

1997 / IEEE
By: Ferlet-Cavrois, V.; Musseau, O.; Raynaud, C.; Pelloie, J.L.; McDonald, P.T.; Stapor, W.J.; Knudson, A.R.; Campbell, A.B.;

Heavy ion induced failures in a power IGBT

1997 / IEEE
By: Detcheverry, C.; Dachs, C.; Lorfevre, E.; Ecoffet, R.; Palau, J.-M.; Calvet, M.-C.; Roubaud, F.; Gasiot, J.;

Suspended SOI structure for advanced 0.1-/spl mu/m CMOS RF devices

1998 / IEEE
By: Kimura, S.; Tanimoto, T.; Tanaka, S.; Hisamoto, D.;

Measurement of thermal and packaging limitations in LDMOSFETs for RFIC applications

1998 / IEEE / 0-7803-4797-8
By: Perugupalli, P.; Shenai, K.; Xu, Y.;

SEB occurrence in a VIP: Influence of the epi-substrate junction

1998 / IEEE
By: Palau, J.-M.; Detcheverry, C.; Dachs, C.; Sudre, C.; Gasiot, J.; Ecoffet, R.; Lorfevre, E.; Garnie, J.; Calvet, M.-C.;

Failure mode of different irradiated power IGBT structures

1997 / IEEE / 0-7803-4071-X
By: Lorfevre, E.; Ecoffets, R.; Calvet, M.-C.; Gasiot, J.; Detcheverry, C.; Palau, J.-M.; Roubaud, F.; Sudre, C.; Dachs, E.;

SEB occurrence in a VIP: influence of the epi-substrate junction

1997 / IEEE / 0-7803-4071-X
By: Lorfevre, E.; Ecoffet, R.; Garnier, J.; Calvet, M.-C.; Dachs, C.; Gasiot, J.; Palau, J.-M.; Detcheverry, C.; Sudre, C.;

Analysis of high current breakdown and UIS behavior of resurf LDMOS (RLDMOS) devices

1998 / IEEE / 0-7803-4752-8
By: Efland, T.; Pendharkar, S.; Tsai, C.-Y.;

2D and 3D simulation of toroidal type thin film inductors

1998 / IEEE
By: Lee, J.J.; Kim, S.D.; Ryu, H.J.; Ahn, C.H.; Kim, H.J.; Han, S.H.; Kim, J.;

Transient behaviour of high voltage termination techniques

1998 / IEEE / 0-7803-4432-4
By: Charitat, G.; Dragomirescu, D.; Mingues, C.;

Dynamic avalanching considerations in optimization of reverse conducting diode in IGBT modules

1998 / IEEE / 0-7803-4497-9
By: Mulay, A.; Shenai, K.; Trivedi, M.;

Two-dimensional simulation of negative resistance effects using quantum moment equations

1998 / IEEE / 0-7803-4369-7
By: Ogura, M.; Vazquez, F.; Cottle, R.; Strachan, A.;

Two-dimensional analysis of surface-state effects on turn-on characteristics in GaAs MESFETs

1999 / IEEE
By: Yamada, T.; Horio, K.;

Physically-based threshold voltage determination for MOSFET's of all gate lengths

1999 / IEEE
By: Tanaka, M.; Suga, M.; Tsuno, M.; Hirose, M.; Miura-Mattausch, M.; Shibahara, K.;

Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices

1999 / IEEE
By: Rudenko, T.; Vandooren, A.; Cristoloveanu, S.; Ernst, T.; Colinge, J.-P.;

Theory and simulation of SiGe anode LIGBT

1998 / IEEE / 0-7803-4306-9
By: Mengsi You; Ping Li; Xuening Li; Yajuan Su;

Mesh structure adjustment in 2D simulation of VLSI super self-aligned Si bipolar transistor

1999 / IEEE / 0-7803-5546-6
By: Suligoj, T.; Biljanovic, P.;

Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFETs

2000 / IEEE
By: Yamada, T.; Wakabayashi, A.; Horio, K.;

Double sided minority carrier collection in silicon solar cells

2000 / IEEE
By: Dicker, J.; Zechner, C.; Van Kerschaver, E.;

A closed-form back-gate-bias related inverse narrow-channel effect model for deep-submicron VLSI CMOS devices using shallow trench isolation

2000 / IEEE
By: Shih-Wei Sun; Kuo-Tai Huang; Kuo, J.B.; Shih-Chia Lin;

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L/sub eff/ and R/sub sd/ of LDD MOSFETs

2000 / IEEE
By: Hauser, J.; Wortman, J.; Osburn, C.; De, I.; Ahmed, K.;

A novel high-voltage sustaining structure with buried oppositely doped regions

2000 / IEEE
By: Sin, J.K.O.; Xin Wang; Xing Bi Chen;

Parallelization of a Monte Carlo ion implantation simulator

2000 / IEEE
By: Hossinger, A.; Selberherr, S.; Langer, E.;

Comparing reconstruction algorithms using a multi-variate analysis

1999 / IEEE / 0-7803-5696-9
By: Strother, S.C.; Anderson, J.R.; Jeih-San Liow;

2D simulations of InGaAs/InAlAs/InP HEMTs with asymmetrical gate recess

2000 / IEEE / 0-7803-6320-5
By: Bachtold, W.; Homan, O.J.; Robin, F.;

An accurate non-quasistatic MOSFET model for simulation of RF and high speed circuits

2000 / IEEE / 0-7803-6305-1
By: Weidong Liu; Jia-Jiunn Ou; Kanyu Cao; Xiaodong Jin; Chenming Hu; Matloubian, M.; Yuhua Cheng;

Particle-in-cell simulation of plasma immersion ion implantation (PIII) of industrial gears

2000 / IEEE / 0-7803-5982-8
By: Chu, P.K.; Kwok, D.T.K.;

Substrate current protection in smart power IC's

2000 / IEEE / 0-7803-6269-1
By: Bafleur, M.; Suquet, M.; Stefanov, E.; Lance, P.; Mauran, N.; Gonnard, O.; Charitat, G.; Peyre-Lavigne, A.;

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Topic: 2d Simulation

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