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Topic: 13.56 Mhz

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High-frequency RFID tag survivability in harsh environments

2013 / IEEE
By: Gutierrez, Alfonso; Davis, Rodeina; Hohberger, Clive; Veeramani, Raj; Hochschild, William; Ingle, Atul; Nicolalde, F. Daniel;

Use of the impedance method to calculate 3-D power deposition patterns for hyperthermia with capacitive plate electrodes

1990 / IEEE
By: Gandhi, O.P.; Orcutt, N.;

Study of etch rate characteristics of SF/sub 6//He plasmas by response-surface methodology: effects of interelectrode spacing

1989 / IEEE
By: Riley, P.E.; Hanson, D.A.;

Effect of RF substrate bias on crystalline orientation of chromium and magnetic characteristics of 84% Co-16% Cr films

1990 / IEEE
By: Fisher, R.D.; Nelson, C.W.; Heiman, N.; Khan, M.R.;

Diagnostics of CH/sub 4/ plasmas used for diamond-like carbon deposition

1990 / IEEE
By: Catherine, Y.; Fourrier, C.; Athouel, L.; Pastol, A.;

Damage free Al reactive-ion-etching for high frequency SAW devices

1989 / IEEE
By: Hosaka, N.; Mizutani, T.; Yuhara, A.; Iwama, A.; Yamada, J.;

A fine process control on the via hole of multilevel interconnection

1989 / IEEE
By: Miki, K.; Ayukawa, A.; Ohnishi, S.; Takenaka, N.; Saito, S.; Sakiyama, K.;

Electrical characteristics of parallel-plate RF discharges in argon

1991 / IEEE
By: Piejak, R.B.; Godyak, V.A.; Alexandrovich, B.M.;

Stabilization of inoperable malignant tumours after treatment with radiofrequency hyperthermia

1988 / IEEE / 0-7803-0785-2
By: Venditti, D.; Iorio, B.; Pigliucci, G.M.; Casciani, C.U.; Tipaldi, G.; Fiorito, R.; Gatti, A.; Calderelli, G.; Cervelli, V.;

Modeling of electronegative radio-frequency discharges

1991 / IEEE
By: Meyyappan, M.; Govindan, T.R.;

Computer simulation of a carbon-deposition plasma in CH/sub 4/

1991 / IEEE
By: Catherine, Y.; Rhallabi, A.;

Diagnostics and modeling of RF discharge dissociation in N/sub 2/O

1991 / IEEE
By: Young, R.M.; Partlow, W.D.; Kline, L.E.; Congedo, T.V.; Mitchell, R.R.;

Experimental modeling of the etch characteristics of polysilicon in CCl/sub 4//He/O/sub 2/ plasmas

1990 / IEEE
By: Spanos, C.J.; Huang, J.; May, G.S.;

InP/insulator interface properties: a comparison between UVCVD, DECR PECVD and 13.56 MHz PECVD

1991 / IEEE / 0-87942-626-8
By: Huber, A.; Cassette, S.; Petitjean, M.; Proust, N.; Grattepain, C.; Perrin, J.; Agius, B.; Plais, F.;

Dynamics of sheaths in low pressure RF discharges

1989 / IEEE
By: Lieberman, M.A.;

Influence of the wafer biasing frequency upon etching of polyimide

1989 / IEEE
By: Grenier, R.; Arnal, Y.; Sauve, G.; Moisan, M.;

Simulational study for gate oxide breakdown mechanism due to non-uniform electron current flow

1991 / IEEE / 0-7803-0243-5
By: Harafuji, K.; Kubota, M.; Nomura, N.; Nakagawa, H.; Yamano, A.; Misaka, A.;

Getting more from fluorescent lamps through resonant converters

1992 / IEEE / 0-7803-0582-5
By: Duarte, J.L.; Rozenboom, J.; Wijntjens, J.;

Characteristics of a transverse-flow CO laser excited by RF-Discharge

1994 / IEEE
By: Matsuzaka, F.; Kanazawa, H.; Kasuya, K.; Uehara, M.;

Design of high-efficiency RF Class-D power amplifier

1994 / IEEE
By: El-Hamamsy, S.-A.;

Highly conductive microcrystalline n-layers for amorphous silicon stacked solar cells: preparation, properties, and device application

1993 / IEEE / 0-7803-1220-1
By: Hapke, P.; Eickhoff, T.; Pavlov, D.; Beneking, C.; Frohnhoff, S.; Kolter, M.; Wagner, H.; Munder, H.;

Novel high density plasma tool for large area flat panel display etching

1995 / IEEE / 0-7803-2143-X
By: Jentzsch, A.; Banziger, U.; Heinrich, F.; Huth, C.; Neumann, G.;

Low bandgap a-Si:H film with better stability prepared by RF PECVD method using helium dilution

1994 / IEEE / 0-7803-1460-3
By: Barua, A.K.; Middya, A.R.; Hazra, S.; Ray, S.;

Modelling of RF glow discharges by direct numerical procedure of the Boltzmann equation

1995 / IEEE / 0-7803-2669-5
By: Makabe, T.; Nakano, N.;

Experiments with the LLNL large-area ICP plasma source

1995 / IEEE / 0-7803-2669-5
By: Egan, P.O.; Benjamin, R.D.; Richardson, R.A.;

Analytic sheath resolution in high density plasma source simulations

1995 / IEEE / 0-7803-2669-5
By: DiPeso, G.; Vahedi, V.;

Experimental study on a magnetically enhanced inductively coupled plasmas source (MEICP)

1995 / IEEE / 0-7803-2669-5
By: Amundon, J.J.; Hershkowitz, N.; Gon-Ho Kim; Miller, J.N.; Taihyeop Lho;

DC plasma potential pattern in low-pressure RF discharge

1995 / IEEE / 0-7803-2669-5
By: Lisovsky, V.A.; Krasnikov, O.V.;

Uniformity measurements in a helicon plasma etcher

1995 / IEEE / 0-7803-2669-5
By: Hershkowitz, N.; Quick, A.K.;

Static current-voltage characteristics for radio-frequency induction discharge

1995 / IEEE / 0-7803-2669-5
By: Budyansky, A.; Zykov, A.;

Negative ion density in inductively coupled chlorine plasmas

1995 / IEEE / 0-7803-2669-5
By: Hebner, G.A.;

Electromagnetic fields in a low-pressure planar inductively coupled plasma source

1995 / IEEE / 0-7803-2669-5
By: Meyer, J.A.; Wendt, A.E.; Kolobov, V.I.; Mau, R.;

Polymer film formation in low-pressure RF discharge

1995 / IEEE / 0-7803-2669-5
By: Lisovsky, V.A.; Yegorenkov, V.D.;

Etching semiconductor materials in low-pressure RF discharge

1995 / IEEE / 0-7803-2669-5
By: Lisovsky, V.A.; Farenik, V.I.; Yegorenkov, V.D.;

Diamond film formation using RF plasma CVD assisted by water vapor enhanced hydrogen radical source

1995 / IEEE / 0-7803-2669-5
By: Nawata, M.; Mizuno, E.; Yamada, K.; Hiramatsu, M.; Goto, T.; Hori, M.; Ikeda, M.;

Wave-electron coupling in helicon source

1995 / IEEE / 0-7803-2669-5
By: Molvik, A.W.; Hooper, E.B.; Stallard, B.W.;

The role of argon metastables in operation and uniformity of planar RF inductively coupled discharges

1995 / IEEE / 0-7803-2669-5
By: Pierre, A.A.; Wendt, A.E.; Stittsworth, J.A.; Stewart, R.A.;

2D-spatiotemporal structure of ICP reactor

1995 / IEEE / 0-7803-2669-5
By: Kamimura, K.; Nakagami, S.; Nakano, N.; Makabe, T.;

Helicon plasma studies

1995 / IEEE / 0-7803-2669-5
By: Breun, R.; Hershkowitz, N.; Brown, R.; Gilland, J.;

Strongly-coupled dusty plasmas

1995 / IEEE / 0-7803-2669-5
By: Cui, C.; Goree, J.; Quinn, R.;

Characteristics of low pressure sulfur discharges

1995 / IEEE / 0-7803-2669-5
By: Gibson, N.D.; Lawler, J.E.;

RF plasma processing for removal of contaminants in a high voltage anode-cathode gap

1996 / IEEE / 0-7803-3322-5
By: Rintamaki, J.I.; Cuneo, M.E.; Menge, P.R.; Cohen, W.E.; Lash, J.S.; Jaynes, R.L.; Hochman, J.M.; Gilgenbach, R.M.;

Electrical conductivity in high frequency plasmas

1996 / IEEE / 0-7803-3322-5
By: Godyak, V.A.; Li, Y.-M.; Lister, G.G.;

Diagnostics of positive and negative ions in high-density CF/sub 4/ plasmas by time-of-flight mass spectrometry

1996 / IEEE / 0-7803-3322-5
By: Ura, K.; Sasaki, K.; Kadota, K.;

A comparison of hydrogen passivation in heteroepitaxial n/sup +/p and p/sup +/n solar cells

1996 / IEEE / 0-7803-3166-4
By: Ringel, S.A.; Chatterjee, B.; Hoffman, R., Jr.;

ZnO/ZnO:Al window and contact layer for thin film solar cells: high rate deposition by simultaneous RF and DC magnetron sputtering

1996 / IEEE / 0-7803-3166-4
By: Cebulla, R.; Wendt, R.; Ellimer, K.;

Development of amorphous silicon based p-i-n solar cell in a superstrate structure with p-microcrystalline silicon as window layer

1996 / IEEE / 0-7803-3166-4
By: Rubinelli, F.A.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.;

Electrical modeling of HF coupled inductors supplying a double frequency inductive plasma reactor

1997 / IEEE / 0-7803-3704-2
By: Ernst, R.; Colpo, P.; Keradec, J.-P.;

Ion implantation by plasma immersion technique

1996 / IEEE / 0-7803-3289-X
By: Bender, H.; Thomae, R.; Thomae, R.; Main, D.F.A.; Hilschert, F.; Halder, J.; Seiler, B.; Schafer, J.; Klein, H.; Mayer-Strane;

Design of a large-scale plasma source ion implantation experiment

1993 / IEEE / 0-7803-1360-7
By: Faehl, R.J.; Reass, W.A.; Henins, I.; Scheuer, J.T.; Nastasi, M.A.; Rej, D.J.; Wood, B.P.; Olsher, R.H.;

Anisotropy in EEDF of capacitive RF discharge

1993 / IEEE / 0-7803-1360-7
By: Piejak, R.B.; Godyak, V.A.;

Narrow gap reactive ion etcher-Its discharge structure and function

1993 / IEEE / 0-7803-1360-7
By: Makabe, T.; Nakano, N.; Petrovic, Z.L.;

Inductive and capacitive discharge modes in helical resonator plasmas

1993 / IEEE / 0-7803-1360-7
By: Bletzinger, P.;

Modeling of plasma processing discharges

1993 / IEEE / 0-7803-1360-7
By: Govindan, T.R.; Meyyappan, M.;

Electron beam resist preparation by plasma polymerization

1993 / IEEE / 0-7803-1360-7
By: Gosavi, S.W.; Zambare, M.S.; Gangal, S.A.;

An HVIC switch for high-frequency power converters

1997 / IEEE / 0-7803-3993-2
By: Carter, D.R.H.; McMahon, R.A.;

Electron drift velocity determination in air

1997 / IEEE / 0-7803-3990-8
By: Yegorenkov, V.D.; Lisovskiy, V.A.;

Operation characteristics of an ICP plasma source

1997 / IEEE / 0-7803-3990-8
By: Tsai, J.L.; Wu, S.L.; Pan, S.C.; Li, J.H.; Tsai, C.H.; Lin, T.L.; Leou, K.C.;

Secondary electron emission influence on the RF gas breakdown

1997 / IEEE / 0-7803-3990-8
By: Kropotov, N.Y.; Lisovskiy, V.A.; Farenik, V.I.;

Reaction pathways for nitrided Si-SiO/sub 2/ interfaces by remote plasma assisted oxidation

1997 / IEEE / 0-7803-3990-8
By: Niimi, H.; Lucovsky, G.; Koh, K.;

A multi-tube helicon source

1997 / IEEE / 0-7803-3990-8
By: Tynan, G.; Chen, F.F.; Evans, J.D.;

Boron doping to diamond and DLC using plasma immersion ion implantation

1997 / IEEE / 0-7803-3990-8
By: Reinhard, D.; Grotjohn, T.; Ikegami, T.; Asmussen, J., Jr.;

/spl alpha/-/spl gamma/ transition properties of an RF discharge in argon

1997 / IEEE / 0-7803-3990-8
By: Lisovskiy, V.A.;

Electron temperature axial pattern in the RF discharge

1997 / IEEE / 0-7803-3990-8
By: Boichuk, V.S.; Lisovskiy, V.A.; Yegorenkov, V.D.;

Characterization study of plasma polymerized hexamethyldisiloxane thin films

1997 / IEEE / 0-7803-2651-2
By: Duck-Chool Lee; Ho-Whan Woo; Ki-Sun Cho; Gu-Bum Park; Jong-Kwan Park; Sang-Hee Lee;

Modeling, project, numerical simulation, and AES temperature diagnostics of an inductively coupled plasma torch for the deposition of high-purity fused silica for optical waveguide production

1997 / IEEE
By: Zazo, A.; Panciatichi, C.; Colombo, V.; Cognolato, L.; Cocito, G.;

Modeling the growth of PECVD silicon nitride films for crystalline silicon solar cells using factorial design and response surface methodology

1997 / IEEE / 0-7803-3767-0
By: Marjamaki, T.; Nybergh, K.; Skarp, E.;

Low damage, highly anisotropic dry etching of SiC

1998 / IEEE / 0-7803-4540-1
By: Ren, F.; Grow, J.M.; Zetterling, C.-M.; Ostling, M.; Shul, R.J.; Lambers, E.S.; Hong, J.; Pearton, S.J.; Wang, J.J.;

Plasma diagnostics on RF inductively coupled ion source

1998 / IEEE / 0-7803-4792-7
By: DeJoseph, C.A.; Wu, R.L.C.; Lanter, W.; Wei Guo;

On the plasma extent in an RF inductively coupled, cylindrical, hydrogen discharge

1998 / IEEE / 0-7803-4792-7
By: Shamamian, V.; Robson, A.E.; Giuliani, J.L.; Campbell, R.;

Atmospheric pressure plasma jet applications

1998 / IEEE / 0-7803-4792-7
By: Selwyn, G.S.; Henins, L.; Herrmann, H.W.; Park, J.;

Electron drift velocity determination in hydrogen

1998 / IEEE / 0-7803-4792-7
By: Lisovskiy, V.A.; Yegorenkov, V.D.;

A low-cost class-E power amplifier with sine-wave drive

1998 / IEEE / 0-7803-4471-5
By: Davis, J.F.; Rutledge, D.B.;

Dielectric properties of SiCF film deposited by PECVD with low dielectric constants

1998 / IEEE / 0-7803-4237-2
By: Kim, K.H.; Lee, J.S.; Ryu, W.S.; Lim, J.;

Measurement of localized specific absorption rate (SAR) for contactless smartcard readers operating in the HF band

1998 / IEEE
By: Schamberger, M.A.; McCoy, D.O.; Kanda, M.; Balzano, Q.;

Effects of discharge frequency on plasma characteristics and etching characteristics in high density Cl/sub 2/ plasma: comparison of ultrahigh-frequency plasma and radio-frequency plasma

1998 / IEEE
By: Akashi, H.; Samukawa, S.;

Diagnostics of an inductively coupled plasma in oxygen

1998 / IEEE
By: Tadokoro, M.; Makabe, T.; Petrovic, Z.L.; Nakano, N.; Itoh, A.;

A multicusp ion source for radioactive ion beams

1997 / IEEE / 0-7803-4376-X
By: Lyneis, C.M.; Xie, Z.Q.; Freedman, S.J.; Gough, R.A.; Wutte, D.C.; Williams, M.D.; Leitner, M.A.; Lee, Y.; Leung, K.N.;

A 13.56 MHz CMOS RF identification transponder integrated circuit with a dedicated CPU

1999 / IEEE / 0-7803-5126-6
By: Ishii, E.; Masui, S.; Sawada, K.; Sugawara, Y.; Iwawaki, T.;

Electric field in magnetized inductively coupled plasma

1999 / IEEE
By: Heung-Sik Tae; Ho-Jun Lee; Ki-Woong Whang; Youn Taeg Kim;

Planar inductively coupled plasmas operated with low and high radio frequencies

1999 / IEEE
By: Tuszewski, M.;

Investigations on charge storage and transport in plasma-deposited inorganic electrets

1999 / IEEE
By: Amjadi, H.;

Diagnostics of charged particles impinging on electrode in RF and microwave discharges

1999 / IEEE / 5-7422-0083-8
By: Orlov, K.E.; Chernoiziumskaya, T.V.; Smirnov, A.S.;

Simultaneous EM whole-body and local hyperthermia-an effective adjuvant in curing of malignant tumors

1999 / IEEE / 5-7422-0083-8
By: Mazokhin, V.N.; Gelvich, E.A.; Kolmakov, D.N.; Lucheyov, N.A.;

Gamma-electron dynamics and radio frequency capacitive sheath diagnostics

1999 / IEEE
By: Smirnov, A.S.; Orlov, K.E.;

Two-dimensional modeling of a micro-cell plasma in Xe driven by high frequency

1999 / IEEE
By: Kurihara, M.; Makabe, T.;

A new technique for laser photodetachment diagnostics of negative ions in processing plasmas using an open microwave resonator

1999 / IEEE / 0-7803-5661-6
By: Kono, A.; Ohya, Y.;

Real-time monitoring of ion source plasma using optical emission spectroscopy

1999 / IEEE / 0-7803-4538-X
By: Graf, M.A.; Benveniste, V.;

High aspect ratio via etching for dual damascene process in a inductively coupled plasma (ICP) etcher

1999 / IEEE / 0-7803-5727-2
By: Jin-Won Park; Jae-Hee Ha; Jae-Hyun Park; Woo-Sung Cho; Kuk-Han Yoon;

Characteristics of high deposition rate PIN diodes from pure SiH/sub 4/ and 10% dilution of SiH/sub 4/ in H/sub 2/

2000 / IEEE
By: Cerdeiva, A.; Estruda, M.; Soto, B.S.; Pereyra, I.;

A traveling wave driven, inductively coupled large area plasma source

1999 / IEEE / 0-7803-5224-6
By: Lidberman, M.A.; Wu, Y.;

Unstable behavior of plasma in inductive discharges

1999 / IEEE / 0-7803-5224-6
By: Marakhtanov, A.M.; Lieberman, M.A.;

Elimination of notching and ARDE by simultaneous modulation of source and wafer RF

1999 / IEEE / 0-7803-5224-6
By: Harper, M.K.; Hershkowitz, N.;

Secondary electron energy profiles as a diagnotic tool for RF plasma sheaths

1999 / IEEE / 0-7803-5224-6
By: Uchiyama, H.; Watanabe, M.; Shaw, D.M.; Collins, G.I.;

Comparison of hot cathode and inductively coupled discharges for application in plasma immersed ion implantation and deposition

1999 / IEEE / 0-7803-5224-6
By: Kan, Y.; Nikiforov, S.A.; Kim, G.H.; Lim, G.H.; Lee, H.S.; Choi, Y.W.; Cho, C.H.;

Modeling and diagnostic of an SF/sub 6/ RF plasma at low pressure

2000 / IEEE
By: Barni, R.; Riccardi, C.; Fontanesi, M.; de Colle, F.;

Measuring electron densities in highly collisional plasmas using a 110 GHz interferometer

2000 / IEEE / 0-7803-5982-8
By: Kelly, K.L.; Schoenbach, K.; Block, R.; Laroussi, M.; Scharer, J.E.;

Experimental investigation of power deposition and ionization kinetics in an inductively coupled discharge

2000 / IEEE / 0-7803-5982-8
By: Crowley, B.; Rullenraad, W.; Vender, D.; Turner, M.M.;

Heavy ion beam probe development

2000 / IEEE / 0-7803-5982-8
By: Connor, K.A.; Crowley, T.P.; Demers, D.R.; Howard, S.J.; Si, J.; Schatz, J.G.; Schoch, P.M.; Shah, U.; Lei, J.;

Pulsed ICP plasma generation and characterization

2000 / IEEE / 0-7803-5982-8
By: DeJoseph, C.A., Jr.; Wei Guo;

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