Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors

By: Hau-Yu Lin; San-Lein Wu; Chao-Ching Cheng; Chih-Hsin Ko; Clement H. Wann; You-Ru Lin; Shoou-Jinn Chang; Tai-Bor Wu;

2011 / American Institute of Physics


We report the characteristics of HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO2/Al2O3 gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4)-surface sample, improvements of capacitance-voltage characteristics for (1×1)-surface sample with lower frequency-dependent capacitance dispersion and higher inversion capacitance are attributed to lower indium composition and less arsenic oxide at Al2O3/InAs interface, as confirmed by x-ray photoelectron spectroscopy. It indicates that the equivalent dangling bond of cations and anions on (1×1)-surface sample tends to avoid the oxidization process and become less pinning.

Related Topics
Aluminium Compounds