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Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors
By: Hau-Yu Lin; San-Lein Wu; Chao-Ching Cheng; Chih-Hsin Ko; Clement H. Wann; You-Ru Lin; Shoou-Jinn Chang; Tai-Bor Wu;
2011 / American Institute of Physics
Description
We report the characteristics of HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO2/Al2O3 gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4)-surface sample, improvements of capacitance-voltage characteristics for (1×1)-surface sample with lower frequency-dependent capacitance dispersion and higher inversion capacitance are attributed to lower indium composition and less arsenic oxide at Al2O3/InAs interface, as confirmed by x-ray photoelectron spectroscopy. It indicates that the equivalent dangling bond of cations and anions on (1×1)-surface sample tends to avoid the oxidization process and become less pinning.
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