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AlGaN/GaN heterostructure transistors for the generation and detection of THz radiation

By: Peroni, M.; Lanzieri, C.; Dominijanni, D.; Cetronio, A.; Evangelisti, F.; Foglietti, V.; Doria, A.; Ortolani, M.; Di Gaspare, A.; Giovine, E.; Gallerano, G.P.; Spassovsky, I.; Giovenale, E.;

2010 / IEEE / 978-1-4244-6657-3

Description

This item was taken from the IEEE Conference ' AlGaN/GaN heterostructure transistors for the generation and detection of THz radiation ' The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies.