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Conductance anomalies in quantum point contacts

By: Notargiacomo, A.; Di Gaspare, L.; Frucci, G.; Giovine, E.; Di Gaspare, A.; Evangelisti, F.; Spirito, D.;

2009 / IEEE / 978-981-08-3694-8


This item was taken from the IEEE Conference ' Conductance anomalies in quantum point contacts ' We present a study of the conductance of quantum point contacts fabricated in AlGaN/GaN and Si/SiGe heterostructures. The investigated devices differ for typology (split gates and etched devices, respectively) and for the resulting potential profiles. We observe conductance quantization in multiple of 2e2/h units with superimposed anomalous plateaus and/or structures suggesting that correlation effects should be included in the description of our 1D systems.