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Diamond MESFET technology development for microwave integrated circuits
By: Sinisi, F.; Corsaro, A.; Calvani, P.; Limiti, E.; Rossi, M.C.; Ciccognani, W.; Giovine, E.; Conte, G.;
2009 / IEEE / 978-1-4244-4749-7
Description
This item was taken from the IEEE Conference ' Diamond MESFET technology development for microwave integrated circuits ' submicron gate-length metal-semiconductor field effect transistors (mesfets) were fabricated on hydrogen-terminated- large grain polycrystalline diamond. Devices showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency f
Related Topics
K-band Device
Mesfet Integrated Circuits
Integrated Circuit Technology
Microwave Technology
Microwave Integrated Circuits
Radio Frequency
Fets
Microwave Devices
Thermal Conductivity
Gallium Nitride
Lithography
Transconductance
Drain-source Current
Hydrogen-terminated-large Grain Polycrystalline Diamond
Microwave Integrated Circuits
Mesfet Technology
Field Effect Mmic
Diamond
Mesfet Integrated Circuits
Engineering
Gate-length Metal-semiconductor Field Effect Transistor
