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Performance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices

By: Jeoung Woo Kim; Yun Chang Park; Myong Ho Song; Jae Sub Oh; Gi Sung Lee; Kwang Hee Kim; Yang-Kyu Choi; Jin Su Kim; Moon-Gyu Jang; Dong-Il Moon; Sungho Kim; Jin-Woo Han; Sung-Jin Choi;

2006 / IEEE / 978-1-4244-3308-7

Description

This item was taken from the IEEE Conference ' Performance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices ' A novel dopant segregated Schottky barrier (DSSB) SONOS device as a form of double-gate (DG) is demonstrated for NOR Flash memory applications. The DSSB also applies to all-around-gate (AAG) SONOS devices. The source side injection caused by sharp energy band bending in the DSSB device results in a high-speed programming (Vth shift of 4.2V @ 320ns) at a low program bias (Vgs/Vds=7V/3V). Moreover, faster program speed in a narrower fin width (Wfin) due to its low parasitic resistance and enhanced gate controllability is achieved. Drain disturbance-free characteristics in a programmed cell are confirmed as well.