Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.
Microwave performance of surface channel diamond MESFETs
By: Corsaro, A.; Calvani, P.; Limiti, E.; Carta, S.; Conte, G.; Rossi, M.C.; Sinisi, F.;
2009 / IEEE / 978-1-4244-4695-7
Description
This item was taken from the IEEE Conference ' Microwave performance of surface channel diamond MESFETs ' Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
Related Topics
Surface Treatment
Hydrogen
Grain Size
Fets
Vacuum Breakdown
Electric Breakdown
Thermal Conductivity
Laser Radar
Plasma Temperature
Mesfets
Polycrystalline Diamond Samples
Submicron Gate
Surface Channel Diamond Mesfet
Microwave Performance
Diamond
Schottky Gate Field Effect Transistors
Engineering
Metal Semiconductor Field Effect Transistors
