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Microwave performance of surface channel diamond MESFETs
By: Corsaro, A.; Calvani, P.; Limiti, E.; Carta, S.; Conte, G.; Rossi, M.C.; Sinisi, F.;
2009 / IEEE / 978-1-4244-4695-7
This item was taken from the IEEE Conference ' Microwave performance of surface channel diamond MESFETs ' Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
Polycrystalline Diamond Samples
Surface Channel Diamond Mesfet
Schottky Gate Field Effect Transistors
Metal Semiconductor Field Effect Transistors