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Reliable through silicon vias for 3D silicon applications

By: Liptak, R.; Tsang, C.; Shapiro, M.; Dang, B.; Andry, P.; Interrante, M.; Griffith, J.; Knickerbocker, J.; Berger, D.; Truong, V.; Guerin, L.; Sprogis, E.;

2009 / IEEE / 978-1-4244-4492-2

Description

This item was taken from the IEEE Conference ' Reliable through silicon vias for 3D silicon applications ' The use of through silicon vias (TSVs) is required to implement 3D chip stacking technology. This work explores a method to fabricate highly reliable TSVs that is compatible with CMOS processing. The key feature of the TSVs is a redundant tungsten bar with a high temperature thermal oxide insulating liner. Care must be taken when exposing the TSVs from the back side so that material is not left on the surface that can cause a leakage path to the silicon wafer. TSVs were produced with that had no fails through standard JDEC testing.