Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Microwave operation of sub-micrometer gate surface channel MESFETs in polycystalline diamond
2009 / IEEE / 978-3-9812668-0-1
This item was taken from the IEEE Conference ' Microwave operation of sub-micrometer gate surface channel MESFETs in polycystalline diamond ' Metal-Semiconductor field effect transistor (MESFETs) were fabricated on hydrogen-terminated polycrystalline diamond. Fabricated MESFETs typically showed high drain-source current (140 mA/mm) and large transconductance values (60 mS/mm), with a cut off frequency f
Hydrogen-terminated Polycrystalline Diamond
Microwave Integrated Circuits
Equivalent Circuit Model
Integrated Circuit Modeling
Integrated Circuit Technology
Insert (key Words)
Metal-semiconductor Field Effect Transistor
Submicrometer Gate Surface Channel Mesfet
Field Effect Mmic
Schottky Gate Field Effect Transistors