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High speed Flash Memory and 1T-DRAM on dopant segregated Schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications
By: Jeoung Woo Kim; Yang-Kyu Choi; Myeong Ho Song; Jae Sub Oh; Gi Sung Lee; Kwang Hee Kim; Yun Chang Park; Jin Soo Kim; Jong-Heon Yang; Moon-Gyu Jang; Dong-Hyun Kim; Sungho Kim; Jin-Woo Han; Sung-Jin Choi;
2008 / IEEE / 978-1-4244-2377-4
This item was taken from the IEEE Conference ' High speed Flash Memory and 1T-DRAM on dopant segregated Schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications ' A novel dopant segregated Schottky barrier (DSSB) FinFET SONOS device is demonstrated in terms of multifunctioning in a high speed NAND-type Flash memory and capacitorless 1T-DRAM. In addition, a novel program mechanism that uses energy band engineered hot electrons (EBEHE) energized by sharp energy band bending at the edge of source/drain (S/D) is proposed for a high speed Flash memory programming operation. A short program time of 100ns and a low program voltage of 12V yield a V
High Speed Flash Memory Programming
Time 100 Ns
Voltage 3.5 V
Decision Support Systems
Sharp Energy Band Bending
Energy Band Engineered Hot Electrons
High Speed Nand-type Flash Memory
Multifunctional Soc Applications
Dopant Segregated Schottky Barrier Finfet Sonos Device
Voltage 12 V