High speed Flash Memory and 1T-DRAM on dopant segregated Schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications

Description

This item was taken from the IEEE Conference ' High speed Flash Memory and 1T-DRAM on dopant segregated Schottky barrier (DSSB) FinFET SONOS device for multi-functional SoC applications ' A novel dopant segregated Schottky barrier (DSSB) FinFET SONOS device is demonstrated in terms of multifunctioning in a high speed NAND-type Flash memory and capacitorless 1T-DRAM. In addition, a novel program mechanism that uses energy band engineered hot electrons (EBEHE) energized by sharp energy band bending at the edge of source/drain (S/D) is proposed for a high speed Flash memory programming operation. A short program time of 100ns and a low program voltage of 12V yield a Vth shift of 3.5V and a retention time exceeding 10years. For multifunctioning, the operation of a capacitorless 1T-DRAM is also demonstrated with a partially silicided DSSB in the same device.