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Low-temperature processed polycrystalline silicon thin-film transistor with aluminum-replaced source and drain regions

By: Hoi-Sing Kwok; Dongli Zhang; Wong, M.;

2008 / IEEE / 978-1-4244-2185-5

Description

This item was taken from the IEEE Conference ' Low-temperature processed polycrystalline silicon thin-film transistor with aluminum-replaced source and drain regions ' Low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with metal-replaced source and drain regions have been fabricated and characterized. Several technological schemes for replacing poly-Si with aluminum have been investigated and the relative merits of each are compared.