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Band offset FinFET-based URAM (Unified-RAM) built on SiC for multi-functioning NVM and capacitorless 1T-DRAM

By: Jin-Woo Han; Seong-Wan Ryu; Yang-Kyu Choi; Jeoung Woo Kim; Yun Chang Park; Myong Ho Song; Jae Sub Oh; Gi Sung Lee; Kwang Hee Kim; Jin Soo Kim; Byung Jin Cho; Kyu Jin Choi; Sung-Jin Choi; Jae-Hyuk Ahn; Chung-Jin Kim; Sungho Kim;

2008 / IEEE / 978-1-4244-1802-2

Description

This item was taken from the IEEE Conference ' Band offset FinFET-based URAM (Unified-RAM) built on SiC for multi-functioning NVM and capacitorless 1T-DRAM ' A FinFET-based unified-RAM (URAM) using the band offset of Si/SiC is demonstrated for the fusion of a non-volatile memory (NVM) and capacitorless 1T-DRAM operation. An oxide/nitride/oxide (O/N/O) gate dielectric and a floating body caused by the band offset are combined in a bulk FinFET to allow two memory operations in a single transistor. The device is fabricated on an epitaxially grown Si/SiC substrate and its process is fully compatible with a conventional bulk FinFET SONOS. Highly reliable NVM and high speed 1T-DRAM operation are confirmed in a single URAM cell.