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Middle-IR Random lasing of Cr:ZnS nanocrystalline powder - from diffusion to photon localization regimes

By: Kim, C.; Martyshkin, D.V.; Mirov, S.B.; Fedorov, V.V.; Moskalev, I.S.;

2008 / IEEE / 978-1-55752-859-9

Description

This item was taken from the IEEE Conference ' Middle-IR Random lasing of Cr:ZnS nanocrystalline powder - from diffusion to photon localization regimes ' First room temperature mid-IR lasing due to intra-shell transitions in the doped semiconductor nanocrystals (NC) is reported. The 27nm Cr:ZnS NCs oscillate at 2200 nm with 325 mJ/cm2 laser threshold. Temperature dependence of photoluminescence decay, lasing threshold and lasing wavelength maxima of Cr:ZnS NCs are studied.